- "Defect-induced perturbation on Si(111)4×1-In: Period-doubling modulation and its origin”, G. Lee, S.-Y. Yu, Hanchul Kim, and J.-Y. Koo, Phys. Rev. B 70, 121304(R) (2004).
- "Ab initio study of incorporation of O2 molecules into Si(001) surfaces: Oxidation by Si Ejection”, B.D. Yu, Y.J. Kim, J. Jeon, Hanchul Kim, H.W. Yeom, I.W. Lyo, K.-J. Kong, Y. Miyamoto, O. Sugino, and T. Ohno, Phys. Rev. B 70, 033307 (2004).
- "Ab initio Investigation of the Early Stage of Nano-scale Thin Film Growth: Al and Co Adatoms on Co (111) Surface”, C. Kim, S.-P. Kim, Y.-S. Kim, Hanchul Kim, and Y.-C. Chung, Jpn. J. Appl. Phys. 43, 3815 (2004).
- "Atomic geometry and theoretical scanning tunneling microscopy images of K chains on InAs(110)”, H. Yi, S. Lee, and Hanchul Kim, Appl. Surf. Sci. 237, 200 (2004).
- "Ab initio study of magnetic properties of SiC-based diluted magnetic semiconductors , Y.-S. Kim, Hanchul Kim, B.D. Yu, D.K. Choi, and Y.-C. Chung, Key Eng. Mater. 264-268, 1237 (2004). [국내]
- "Dynamical pathway model for the formation of C60”, I.-H. Lee, Hanchul Kim, and J. Lee, J. Chem. Phys. 120, 4672 (2004).