~2002

"First-principles study of atomic and electronic structure of Ba/Si(111)”, S. Hong, Hanchul Kim, G. Lee, and J.-Y. Koo, J. Phys. Soc. Jpn. 71, 2761 (2002).
"Initial stage of carbon incorporation into Si(001) and one-dimensional ordering of embedded carbon”, W. Kim, Hanchul Kim, G. Lee, and J.-Y. Koo, Phys. Rev. Lett. 89, 106102 (2002).
"Formation of atomically flat Si(001) surface with incorporated carbon”, W. Kim, Hanchul Kim, G. Lee, S.-Y. You, Y.-K. Hong, and J.-Y. Koo, Surf. Sci. 516, L553 (2002).
"Acetylene molecules on the Si(001) surface: room temperature adsorption and structural modification upon annealing”, W. Kim, Hanchul Kim, G. Lee, J. Chung, S.-Y. You, Y.-K. Hong, and J.-Y. Koo, Surf. Sci. 514, 376 (2002).
"Controlled two-dimensional distribution of nanoparticles by spin-coating method”, Y.-K. Hong, Hanchul Kim, G. Lee, W. Kim, J.-I. Park, J. Cheon, J.-Y. Koo, Appl. Phys. Lett. 80, 844 (2002).
"Density-functional theory modeling of bulk magnetism with spin-dependent pseudopotentials”, F. Starrost, Hanchul Kim, S. C. Watson, E. Kaxiras, E. A. Carter, Phys. Rev. B 64, 235105 (2001).
"Initial Adsorption Configurations of Acetylene Molecules on Si(001) Surface”, W. Kim, Hanchul Kim, G. Lee, Y.-K. Hong, K. Lee, C. Hwang, D.-H. Kim, and J.-Y. Koo, Phys. Rev. B 64, 193313 (2001).
"Second nearest-neighbor modified embedded atom method potentials for bcc transition metals”, B.-J. Lee, M. I. Baskes, Hanchul Kim, Y. K. Cho, Phys. Rev. B 64, 184102 (2001).
"Structure of the Ba-induced Si(111)-3×1 Reconstruction”, G. Lee, S. Hong, Hanchul Kim, D. Shin, J.-Y. Koo, H.-I. Lee, D. W. Moon, Phys. Rev. Lett. 87, 056104 (2001).
"HARES: an Efficient Method for First-Principles Electronic Structure Calculations of Complex Systems”, U. V. Waghmare, Hanchul Kim, I. J. Park, N. Modine, P. Maragakis, E. Kaxiras, Comput. Phys. Commun. 137, 341 (2001).
"Ab initio Studies of AlSb (001) Adatom Behavior and Reconstruction”, N. A. Modine, Hanchul Kim, and E. Kaxiras, in Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films: Mat. Res. Soc. Symp. Proc. 618, edited by J. M. Millunchick, A. L. Barabasi, E. D. Jones, and N. Modine (Materials Research Society, Warrendale, PA, 2000) pp. 11-19.
"Structure of III-Sb (001) Growth Surfaces: The Role of Heterodimers”, W. Barvosa-Carter, A. S. Bracker, J. C. Culbertson, B. Z. Nosho, B. V. Shanabrook, L. J. Whitman, Hanchul Kim, N. A. Modine, and E. Kaxiras, Phys. Rev. Lett. 84, 4649 (2000).
"Parallel Methods and Tools for Predicting Materials Properties”, A. Stathopoulos, S. Ogut, Y. Saad, J. R. Chelikowsky, and Hanchul Kim, Computing in Science & Engineering 2, 19 (2000).
"Electronic Structure Calculations for Plane-wave Codes without Diagonalization”, L. O. Jay, Hanchul Kim, Y. Saad, and J. R. Chelikowsky, Comput. Phys. Commun. 118, 21 (1999).
"Electronic and Structural Properties of the As Vacancy on the (110) Surface of GaAs”, Hanchul Kim† and J. R. Chelikowsky, Surf. Sci. 409, 435 (1998).
"Simulating STM Images for the GaAs (110) Surface”, J. R. Chelikowsky and Hanchul Kim, in Microscopic Simulation of Interfacial Phenomena in Solids and Liquids: Mat. Res. Soc. Symp. Proc. 492, edited by S. R. Phillpot, P. D. Bristowe, D. G. Stroud, and J. R. Smith (Materials Research Society, Pittsburgh, PA, 1998), pp. 49-58.
"Ab initio cluster calculations for vacancies in bulk Si”, S. Ogut, Hanchul Kim, and J. R. Chelikowsky, Phys. Rev. B 56, R11353 (1997).
"Reply to Comment on Theoretical scanning tunneling microscopy image of the As vacancy on the GaAs (110) surface”, Hanchul Kim† and J. R. Chelikowsky, Phys. Rev. Lett. 79, 3315 (1997).
"Theoretical scanning tunneling microscopy image of the As vacancy on the GaAs (110) surface”, Hanchul Kim† and J. R. Chelikowsky, Phys. Rev. Lett. 77, 1063 (1996).
"Ab initio pseudopotential calculations for the electronic structure of low-Tc quaternary intermetallic compound, LuNi2B2C and the related compound LuNiBc", Hanchul Kim†, C.-D. Hwang, and J. Ihm, Phys. Rev. B 52, 4592 (1995).
"Ab initio pseudopotential plane-wave calculations of the electronic structure of YBa2Cu3O7, Hanchul Kim† and J. Ihm, Phys. Rev. B 51, 3886 (1995).
"Ab initio pseudopotential calculations of the electronic structure of high-Tc cuprates and intermetallic compounds: significance of the layer structure to superconductivity, Hanchul Kim†, C.-D. Hwang, and J. Ihm, Physica C 235-240, 2107 (1994).
"Modification of the DIIS method for diagonalizing large matrices, Hanchul Kim†, B.D. Yu, and J. Ihm, J. Phys. A 27, 1199 (1994).
"Phenomenological model of high-Tc cuprate superconductors including interlayer interactions", B.D. Yu, Hanchul Kim, and J. Ihm, Phys. Rev. B 45, 8007 (1992).
"Berry`s phase realized in solids with broken time-reversal symmetry: application to anyon superconductivity", J. Ihm and Hanchul Kim, Physica C 185-189, 1687 (1991).
"Significance of interlayer interactions to the superconducting mechanism of high-Tc copper oxides", J. Ihm, B.D. Yu, and Hanchul Kim, Solid State Commu. 76, 691 (1990).

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