For complete publication list, please visit my google scholar.
You may find preprint version of some of my works on eScholorship.
Ph.D. Dissertation: Modeling and Design Enablement for Future Computing
For complete publication list, please visit my google scholar.
You may find preprint version of some of my works on eScholorship.
Ph.D. Dissertation: Modeling and Design Enablement for Future Computing
C. -T. Tung, X. Duan, D. Wu, and J. Wang, “PrimeSim D2D: A Scalable, Machine Learning-assisted Data-Driven Modeling Framework for Fast DTCO”, 2026 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kumamoto, Japan, 2026.
C. -T. Tung, “Using UMEM-FE for Ferroelectric Circuit Simulation”, 2026 International Compact Modeling Conference (ICMC), Long Beach, CA, USA, 2026.
C. -T. Tung, “Application of AI and ML in the Compact Modeling Domain”, 2026 International Compact Modeling Conference (ICMC), Long Beach, CA, USA, 2026.
C. -T. Tung, “A Symmetric Unified Transport and Charge Model for Metal–Oxide–Semiconductor Field-Effect Transistor from Diffusive to Ballistic Regimes,” Journal of Applied Physics, 28 June 2026, 139 (24), 244501, doi: 10.1063/5.0339948.
C. -T. Tung and C. Hu, "Physics-Informed Neural Networks for Device and Circuit Modeling: A Case Study of NeuroSPICE," in IEEE Electron Device Letters, vol. 47, no. 5, pp. 1021-1024, May 2026, doi: 10.1109/LED.2026.3667891.
C. -T. Tung, "A Unified Memristor Compact Model for RRAM, FERAM/FTJ, and MRAM," in IEEE Transactions on Electron Devices, vol. 73, no. 1, pp. 332-339, Jan. 2026, doi: 10.1109/TED.2025.3633652.
C. -T. Tung, J. -H. Chen, S. Salahuddin and C. Hu, "Physics-Enhanced Neural Network Compact Model for Fast and Flexible Transistor Modeling," in IEEE Transactions on Electron Devices, vol. 72, no. 12, pp. 6487-6493, Dec. 2025, doi: 10.1109/TED.2025.3627591.
F. Chavez, J.-H. Chen, C. -T. Tung, C. Hu, and Sourabh Khandelwal, "Application of explainable AI on deep learning-based gate length scalable IV parameter extractor for BSIM-IMG," in Solid-State Electronics, Volume 229, November 2025, 109154, doi: 10.1016/j.sse.2025.109154.
C. -T. Tung, “Study and Design Nanotransistor using SEMIDV Device Simulator,” APL Electronic Devices, 1 September 2025, 1 (3), 036114, doi: 10.1063/5.0280961.
J.-H. Chen, F. Chavez, C. -T. Tung, Sourabh Khandelwal, and C. Hu, "A multi-stage neural network I-V and C-V BSIM-CMG model global parameter extractor for advanced GAAFET technologies," in Solid-State Electronics, Volume 226, June 2025, 109081, doi: 10.1016/j.sse.2025.109081.
C. -T. Tung, S. Salahuddin and C. Hu, "BSIM-NN: A Machine Learning Compact Model for Fast IC Simulation," 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong Kong, Hong Kong, 2025, pp. 1-3, doi: 10.1109/EDTM61175.2025.11040826.
J. -H. Chen, A. Pampori, C. -T. Tung, S. Salahuddin and C. Hu, "A BSIM Compact Model of Two-Dimensional Semiconductor Field Effect Transistors," 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Hong Kong, Hong Kong, 2025, pp. 1-3, doi: 10.1109/EDTM61175.2025.11040344.
C. -T. Tung, S. Salahuddin and C. Hu, "A SPICE-Compatible Neural Network Compact Model for Efficient IC Simulations," 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Jose, CA, USA, 2024, pp. 01-04, doi: 10.1109/SISPAD62626.2024.10733248.
C. -T. Tung, C. K. Dabhi, S. Salahuddin, C. Hu, and Sourabh Khandelwal, "A versatile compact model of resistive random-access memory (RRAM)," in Solid-State Electronics, Volume 220, October 2024, 108989, doi: 10.1016/j.sse.2024.108989.
C. -T. Tung, A. Pampori, C. Kumar Dabhi, S. Salahuddin and C. Hu, "A Novel Neural Network-Based Transistor Compact Model Including Self-Heating," in IEEE Electron Device Letters, vol. 45, no. 8, pp. 1512-1515, Aug. 2024, doi: 10.1109/LED.2024.3408151.
J.-H. Chen, F. Chavez, C. -T. Tung, Sourabh Khandelwal, and C. Hu, "A single neural network global IV and CV parameter extractor for BSIM-CMG compact model," in Solid-State Electronics, Volume 216, June 2024, 108898, doi: 10.1016/j.sse.2024.109081.
C. -T. Tung, S. Salahuddin and C. Hu, "Non-Quasi-Static Modeling of Neural Network-Based Transistor Compact Model for Fast Transient, AC, and RF Simulations," in IEEE Electron Device Letters, vol. 45, no. 7, pp. 1277-1280, July 2024, doi: 10.1109/LED.2024.3404404.
C. -T. Tung, A. Dasgupta, H. Agarwal, S. Salahuddin and C. Hu, "A Compact Model of Perpendicular Spin-Transfer-Torque Magnetic Tunnel Junction," in IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 57-61, Jan. 2024, doi: 10.1109/TED.2023.3313997.
F. Chavez, C. -T. Tung, J.-H. Chen, C. Hu, and Sourabh Khandelwal, "Deep learning-based IV global parameter extraction for BSIM-CMG," in Solid-State Electronics, Volume 209, November 2023, 108766, doi: 10.1016/j.sse.2023.108766.
F. Chavez, J. -H. Chen, C. -T. Tung, C. Hu and S. Khandelwal, "I-V Global Parameter Extraction for Industry Standard FinFET Compact Model using Deep Learning," 2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Cairns, Australia, 2023, pp. 20-22, doi: 10.1109/RFIT58767.2023.10243373.
C. -T. Tung and C. Hu, "Neural Network-Based BSIM Transistor Model Framework: Currents, Charges, Variability, and Circuit Simulation," in IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 2157-2160, April 2023, doi: 10.1109/TED.2023.3244901.
G. Pahwa, A. Dasgupta, C. -T. Tung, M. -Y. Kao, C. K. Dabhi, S. Sarker, S. Salahuddin, C. Hu, "Compact Modeling of Emerging IC Devices for Technology-Design Co-development," 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 8.1.1-8.1.4, doi: 10.1109/IEDM45625.2022.10019433.
C. -T. Tung, M. -Y. Kao and C. Hu, "Neural Network-Based and Modeling With High Accuracy and Potential Model Speed," in IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6476-6479, Nov. 2022, doi: 10.1109/TED.2022.3208514.
C. -T. Tung, G. Pahwa, S. Salahuddin and C. Hu, "A Compact Model of Nanoscale Ferroelectric Capacitor," in IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4761-4764, Aug. 2022, doi: 10.1109/TED.2022.3181573.
C. -T. Tung, G. Pahwa, S. Salahuddin and C. Hu, "A Compact Model of Ferroelectric Field-Effect Transistor," in IEEE Electron Device Letters, vol. 43, no. 8, pp. 1363-1366, Aug. 2022, doi: 10.1109/LED.2022.3182141.
C. -T. Tung, S. Salahuddin and C. Hu, "A Compact Model of Antiferroelectric Capacitor," in IEEE Electron Device Letters, vol. 43, no. 2, pp. 316-318, Feb. 2022, doi: 10.1109/LED.2021.3135001.
C. -T. Tung, G. Pahwa, S. Salahuddin and C. Hu, "A Compact Model of Metal–Ferroelectric-Insulator–Semiconductor Tunnel Junction," in IEEE Transactions on Electron Devices, vol. 69, no. 1, pp. 414-418, Jan. 2022, doi: 10.1109/TED.2021.3130857.
C. -T. Tung, H. -Y. Lin, S. -W. Chang and C. -H. Wu, "Analytical Modeling of Tunnel-Junction Transistor Lasers," in IEEE Journal of Selected Topics in Quantum Electronics, vol. 28, no. 1: Semiconductor Lasers, pp. 1-8, Jan.-Feb. 2022, Art no. 1501008, doi: 10.1109/JSTQE.2021.3090527.
C. -T. Tung, G. Pahwa, S. Salahuddin and C. Hu, "A Compact Model of Polycrystalline Ferroelectric Capacitor," in IEEE Transactions on Electron Devices, vol. 68, no. 10, pp. 5311-5314, Oct. 2021, doi: 10.1109/TED.2021.3100814.
C. -T. Tung, S. -W. Chang, and C. -H. Wu, "Chirp-free optical-signal generation using dual-and-direct current-voltage modulation of transistor lasers," Optics Letters, 45, 2474-2477 (2020), doi: 10.1364/OL.383069.
C. -T. Tung, C. -H. Chang, S. -W. Chang, and C. -H. Wu, "Pulse compression irrespective of fiber dispersion using chirp of transistor lasers," Optics Letters, 44, 2109-2112 (2019), doi: 10.1364/OL.44.002109.
C. -T. Tung, S. -W. Chang, and C. -H. Wu, “Theoretical Analysis on Optical Frequency Response of Tunnel-junction Transistor Lasers Operated in Different Configurations,” Journal of Applied Physics, 14 January 2019, 125 (2), 023105, doi: 10.1063/1.5067281.
C. -T. Tung, S. -W. Chang and C. -H. Wu, "High Speed Data Transmission under Voltage Modulation of Transistor Lasers," 2018 23rd Opto-Electronics and Communications Conference (OECC), Jeju, Korea (South), 2018, pp. 1-2, doi: 10.1109/OECC.2018.8729910.