Research Highlights

1. Research Vision and Core Expertise

My research program is dedicated to the development of low-energy nanoporous silicon (NPS) fabrication, quantum-confinement-enhanced luminescence, and low-temperature bonding technologies for silicon-based optoelectronic devices. The overarching aim is to overcome long-standing limitations in traditional porous silicon (PS) processing—particularly structural non-uniformity, interface defects, poor reproducibility, and low light-emission efficiency.

This research integrates:

• Photoelectrochemical etching (PEE / PEEU)

• Laser-enhanced multispectral irradiation for pore modulation

• Nanoporous silicon P–N junction engineering

• Liquid-phase APTES bonding for fragile PS layers

• Optical & electrical characterization of PS-based devices

2. Major Research Directions & Key Scientific Contributions

2.1 Low-Energy Photoelectrochemical Etching of Nanoporous Silicon

Conventional PS etching suffers from high defect density, poor pore uniformity, thermal damage, and unstable morphology. To solve this bottleneck, I developed a laser-assisted photoelectrochemical etching process with ultrasonic agitation (PEEU).

Key contributions:

• Highly uniform nanoporous layers across large sample areas 

• Precise pore-size control (quantum confinement regime)

• Reduced etching damage with low thermal budget

• Improved reproducibility

• Feasible P-type / N-type porous silicon structures

2.2 Quantum-Confinement-Enhanced Luminescence

Through precise pore-size modulation, quantum confinement significantly enhances emission in the red–visible spectrum.

Achievements:

• Tunable emission wavelengths via pore-size control 

• Laser-stimulated enhancement of electron–hole generation 

• Correlation of laser wavelength, etching depth, and PL intensity 

• Improved radiative recombination due to nanocrystal control  

2.3 P–N Nanoporous Silicon Junctions

Using PEEU and controlled doping, I fabricated stable P–N porous silicon junctions with:

• Stable diode rectification 

• Enhanced electroluminescence 

• Lower forward voltage characteristics 

• Reduced interface defects 

2.4 Low-Temperature Liquid-Phase APTES Bonding

APTES-mediated bonding enables strong wafer bonding without high-temperature processing—particularly suitable for fragile porous silicon.

Contributions:

• Strong bonding without thermal load 

• Reduced interface voids 

• Preserved pore integrity 

• High bonding repeatability 

• Enables multilayer PS integration 

3. Summary

My research establishes a comprehensive and internationally competitive framework spanning nanoporous silicon fabrication, quantum confinement luminescence engineering, P–N junction devices, and low-temperature bonding technologies. These results push porous silicon toward practical optoelectronic applications.