歡迎來到Triple-S實驗室 半導體元件感測系統實驗室
Welcome to Triple-S Lab
Semiconductor Devices and Sensing System
Welcome to Triple-S Lab
Semiconductor Devices and Sensing System
The research topics of the Triple-S lab focus on design and fabrication of the semiconductor components for biomedical sensors and nonvolatile memories applications. Currently we collaborate with IC company and hospital to develop biosensing system. We also collaborate with FCU team to develop organic nonvolatile resistive memory, and study microstructure induced stem cell differentiation with NCKU team.
實驗室研究題目:
1. 延伸閘極式場效電晶體感測系統(與半導體公司合作)
A. 細菌檢測(金黃色葡萄球菌)
B. 蛋白質檢測 (阿茲海默症Tau蛋白、新冠肺炎Omicron變異蛋白)
C. DNA序列檢測(B型肝炎DNA)
2. 奈米線場效電晶體感測器
A. 蛋白質檢測 (α-胎兒蛋白、B肝表面抗原)
B. DNA序列檢測(癌症相關序列DNA、C型肝炎DNA)
3. 非揮發性記憶體(與逢甲大學合作)
A. 奈米晶體快閃記憶體
B. 化學電解金屬化記憶體
C. 聚醯亞胺電阻式記憶體
D. 電阻式光記憶體
4. 奈米製造
A. 奈米針尖陣列
B. 奈米圓柱陣列影響幹細胞分化(與成功大學合作)
Research topics:
1. Extend-gate FET system system (collaborate with IC company)
A. Bacterial detection (Staphylococcus aureus)
B. Protein detection (Alzheimer's disease protein tau, SARS-Cov-2 Omicron mutant protein)
C. DNA sequence detection(HBV DNA)
2. Nanowire FET biosensors
A. Protein detection(alpha fetoprotein, HBsAg)
B. DNA sequence detection(Cancer related DNA sequence, HCV DNA)
3. Nonvolatile memory devices (collaborate with FCU team)
A. Nanocrystall flash memory
B. ECM-type RRAM
C. Polyimide based resistive memory
D. Resistive photomemory
4. Nanofabrication
A. Nanotips array
B. Nanopillars array for stem cell differentiation (collaborate with NCKU team)
奈米製造 Nano fabrications
新冠肺炎病毒檢測 [J. Electrochemical Soc., 169 (7) 077514, 2022 (SCIE, IF=4.316)]
肝癌抗原檢測 [Sensors and Actuators B: Chemical, 256, 2018, pp. 1114–1121 (SCIE, IF=9.221)]
癌症相關DNA檢測 [Biosens. Bioelectron., 25, 2009, 820. (SCIE, IF=12.545)]
錯配鹼基對之DNA檢測 [J. Electrochemical Soc., 165 (13) B576-B581, 2018. (SCIE, IF=4.316)]
奈米線尺寸的研究 [Biosensors, 12(2), 115, 2022. (SCIE, IF=5.519)]
非揮發性光記憶體 [Applied Physics Letters, 121 (21), 213301, 2022. (SCIE, IF=3.971)]
PI非揮發性電阻式記憶體 [IEEE Transactions on Electron Devices, 67, 2020, pp. 277-282. (SCIE, IF=3.221)]
奈米晶體快閃記憶體 [IEEE Electron Device Lett., 31(7), 2010, 746. (SCIE, IF=4.816)]