Sang Min Lee and Hyunwoo Kim, "Improving DC and RF Performance in NanosheetFET via Asymmetric Dual-κ Inner Spacer," 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan 27-30, 2026.
Jae Woog Jung, Hyung Soo Kim, and Hyunwoo Kim, "Physics-Based Compact Modeling of Ferroelectric In-Ga-Zr-O Thin-Film Transistors," 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan 27-30, 2026.
Hyunwu Yoo, Jae Woog Jung, and Hyunwoo Kim, "Performance Optimization of 2T-nC FeRAM via Compact Ferroelectric Modeling," 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan 27-30, 2026.
Haeseul Cho, Jae Woog Jung, and Hyunwoo Kim, "Compact Modeling of FeFETs for Memory Application: Landau-Khalatnikov, Preisach, and NLS Approaches," 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan 27-30, 2026.
Jonghwa Jeong, Hyeongchan Son, and Hyunwoo Kim, "High-Density 2T0C DRAM Utilizing Vertical Gate-All-Around (GAA) IGZO FETs for Improved Performance," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
Hyun Woo Lee, Yong Jun Woo, Sungjun Kim, and Hyunwoo Kim, "Application to Leaky Integrate and Firing Model Using Ovonic Threshold Compact Model," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
SeoYoung Chung, Yena Han, and Hyunwoo Kim, "Design and Performance Evaluation of CFET-Based SRAM," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
Jae Woog Jung, Sooyeon Yoon, Jaehyung Park, and Hyunwoo Kim, "Application of Physical-Based Ferroelectric Field-Effect Transistor Design to In-Memory Computing," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
Hye Ram Lee, Bo Kyung Chung, Jae Woog Jung, and Hyunwoo Kim, "Physical-Based Modeling of Ferroelectric Capacitor for FeRAM Application," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
In Su Bok and Hyunwoo Kim, "Impact of CFET Contact Scheme on Device Performance: Analysis and Optimation," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
Jinho Park and Hyunwoo Kim, "Impact of Gate Angle variation Complementary FET," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
Young Seo Park, Jae Woog Jung, and Hyunwoo Kim, "Electrical Isolation of Forksheet FET with Local Punch-Through Stop Doing Process," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
HyunCheol No, Jaewoog Jung, and Hyunwoo Kim, "Implementation of Ferroelectric FET Characteristics Using Semi-Empirical Ferroelectric Capacitance Model," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
Hyoungsoo Kim, Daewoong Kwon, and Hyunwoo Kim, "Vertical Channel IGZO-TFT Model for Neuromorphic Application," 32th Korean Conference on Semiconductors, Jeongseon, Korea, Feb 12-14, 2025.
Hyoungsoo Kim, Jinho Park, Jae Woog Jung, and Hyunwoo Kim, "Physical Based IGZO Thin-Film Transistor Compact Model for Process In Memory (PIM) Applications," International Conference on Electronics, Information, and Communication (ICEIC), Osaka, Japan, Jan 19-22, 2025.
Hyoungsoo Kim, Jin Ho Park, and Hyunwoo Kim, "Lambert W 함수와 Barrier-Lowering 모델을 활용한 비정질 IGZO TFT compact model의 설계," 대한전자공학회 하계종합학술대회, Jeju, Korea, Jun 26-28, 2024.
Hyeong Chan Son, Jonghwa Jeong, Jin Ho Park, Hyoungsoo Kim, and Hyunwoo Kim, "IGZO 기반 2T0C DRAM에서 Recess Channel을 이용한 Retention Time 개선," 대한전자공학회 하계종합학술대회, Jeju, Korea, Jun 26-28, 2024.
Jin Ho Park and Hyunwoo Kim, "Impact of Dielectric wall Variations of Forksheet FET," 31th Korean Conference on Semiconductors, Gyeongju, Korea, Jan 24-26, 2024.
Hyeong Chan Son and Hyunwoo Kim, "Analysis of Single-Event Transient in Nanosheet Gate-All-Around Structured Tunneling-Based Ternary CMOS" 31th Korean Conference on Semiconductors, Gyeongju, Korea, Jan 24-26, 2024.
Jae Woog Jung and Hyunwoo Kim, "Intrinsic Delay Optimization on Lateral Source/Drain Growth Profile for Nanosheet Field-Effect Transistor," 31th Korean Conference on Semiconductors, Gyeongju, Korea, Jan 24-26, 2024.
Jonghwa Jeong and Hyunwoo Kim, "Investigating Radioactive Ions Effect in the Complementary FET," 31th Korean Conference on Semiconductors, Gyeongju, Korea, Jan 24-26, 2024.
Won Gi Hong and Hyunwoo Kim, "Analysis on Electrical Performance of Nanosheet FET with Asymmetric Inner Spacer Thickness" 31th Korean Conference on Semiconductors, Gyeongju, Korea, Jan 24-26, 2024.
서울시 광진구 능동로 120 건국대학교
Engineering Building C388, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Korea