#Equal Contribution, *Corresponding Author 

2025

1. Hyoungsoo Kim, Eunchan Park, Been Kwak, Daewoong Kwon*, and Hyunwoo Kim*, "Physics-Based α-IGZO TFTs Compact Modeling and Neural Network Application With 2T0C DRAM Cell" IEEE Access, vol. 13, no. 9, pp. 158751-158762, Sep. 2025, doi: 10.1109/ACCESS.2025.3605345.

2. Jin Ho Park, Jae Woog Jung, and Hyunwoo Kim*, "Optimization of lateral source/drain growth profile for improving RC delay in nanosheet field-effect transistor," Solid-State Electronics, vol. 72, no. 8, pp. 3946-3951, Aug. 2025, doi: 10.1016/j.sse.2025.109227.

3. Jonghwa Jeong, Jang Hyun Kim*, and Hyunwoo Kim*, "Analysis on Single-Event Transient in Complementary FETs With Heavy Ion Effects," IEEE Transactions on Electron Devices, vol. 72, no. 8, pp. 3946-3951, Aug. 2025, doi: 10.1109/TED.2025.3574277.

4. Seokwoo Hong, Sihyun Kim, Hyunwoo Kim, Ickhyun Song, Jang Hyun Kim, and Garam Kim*, "Optical characterization of GaN-based LED devices through spectroscopic ellipsometry", Optics & Lase Technology, Vol. 184, No. 6, pp. 112560-1-112560-9, Jun. 2025 doi: 10.1016/j.optlastec.2025.112560.

5. Ryun-Han Koo, Wonjun Shin*, Sangwoo Kim, Jangsaeng Kim, Been Kwak, Jiseong Im, Hyunwoo Kim, Deok-Hwang Kwon, Suraj S. Cheema, Jong-Ho Lee, and Daewoong Kwon*, "Low-Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO2 Ferroelectric FETs," Advanced Science, No. 4, pp. 2501367-1-2501367-12, Apr. 2025 doi: 10.1002/advs.202501367.

6. Un Hyun Lim, Young Suh Song, Hyunwoo Kim, and Jang Hyun Kim*, "Analysis of thermal effects according to channel and drain contact metal distance", Case Studies in Thermal Engineering,  Vol. 65, No. 1, pp. 105642-1-105642-12, Jan. 2025 doi: 10.1016/j.csite.2024.105642.

2024

7. Hyeong-Chan Son and Hyunwoo Kim*, "Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure", IEEE ACCESS, Vol. 12, No. 10, pp. 145393-145399, Oct. 2024 doi: 10.1109/ACCESS.2024.3471809.

8. Su Yeon Jung, Hyunwoo Kim, Jongmin Lee, and Jang Hyun Kim*, "Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor", IEEE Journal of the Electron Device Society, Vol. 12, No. 9, pp. 779-784, Sep. 2024 doi: 10.1109/JEDS.2024.3465594.

9. Gyeong Jae Lee, Yoon Jun Kwon, Young Suh Song, Hyunwoo Kim*, and Jang Hyun Kim*, "Optimization of FinFET's Fin Width and Height with Self-Heating Effect", Journal of Semiconductor Technology and Science, Vol. 24, No. 4, pp. 365-372, Aug. 2024 doi: 10.5573/JSTS.2024.24.4.365.

10. Young Suh Song, Hyunwoo Kim*, and Jang Hyun Kim*, "Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering", IEEE ACCESS, Vol. 12, No. 7, pp. 105878-105886, Jul. 2024 doi: 10.1109/ACCESS.2024.3435691.

11. Been Kwak, Daewoong Kwon, and Hyunwoo Kim*, "Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor", IEEE Transactions on Nanotechnology, Vol. 23, No. 7, pp. 562-566, Jul. 2024 doi: 10.1109/TNANO.2024.3421263.

12. Tae Young Yoon, Dongho Shin, Hyunwoo Kim*, and Jang Hyun Kim*, "Superjunction IGBT with split carrier storage layer," Semiconductor Science and Technology, vol. 39, no. 5, pp. 075003-1-075003-10, May. 2024, doi: 10.1088/1361-6641/ad4739.

13. Tae Hyun Hwang, Sangwan Kim, Garam Kim, Hyunwoo Kim*, and Jang Hyun Kim*, "Analysis and Prediction of Nanowire TFET's Work Function Variation", Journal of Semiconductor Technology and Science, Vol. 24, No. 2, pp. 96-104, Apr. 2024 doi: 10.5573/JSTS.2024.24.2.96.

14. Ju Hong Min, Dongho Shin, Hyunwoo Kim*, and Jang Hyun Kim*, "Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor," Physica Scripta, vol. 99, no. 4, pp. 045526-1-045526-9, Mar. 2024, doi: 10.1088/1402-4896/ad30e3.

15. Jiwon You, Hyunwoo Kim*, and Daewoong Kwon*, "Analysis of Nanosheet Field-Effect Transistor With Local Bottom Isolation," IEEE Transactions on Electron Devices, vol. 71, no. 5, pp. 2844-2848, Mar. 2024, doi: 10.1109/TED.2024.3373723.

2023

16. Jang Hyun Kim and Hyunwoo Kim*, "Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping" Electronics, vol. 24, no. 12, pp. 4392-1-4392-12, Dec. 2023, doi: 10.3390/electronics12244932.

17. Sang Woo Kim#, Wonjun Shin#, Munhyeon Kim#, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim, Changhyeon Han, Soi Jeong, Eun Chan Park, Ji Won You,  Hyunwoo Kim, Rino Choi*, and Daewoong Kwon*, "Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate interlayer", IEEE Electron Device Letters, Vol. 44, No. 12, pp. 1955-1958, Dec. 2023 doi: 10.1109/LED.2023.3324695.

18. Do Gyun An, Garam Kim, Hyunwoo Kim, Sangwan Kim*, and Jang Hyun Kim*, "Comparative analysis of junctionless and inveresion-mode nanosheet FETs for self-heating effect mitigation," Semiconductor Science and Technology, vol. 39, no. 12, pp. 015006-1-015006-7, Dec. 2023, doi: 10.1088/1361-6641/ad10c4.

19. Chaewon Yun, Sangwan Kim, Seongjae Cho, Il Hwan Cho, Hyunwoo Kim, Jang Hyun Kim, and Garam Kim*, "Optimization of Dual-workfunction Line  Tunnel Field-Effect Transistor with Island Source Junction", Journal of Semiconductor Technology and Science, Vol. 23, No. 4, pp. 207-214, Aug. 2023 doi: 10.5573/JSTS.2023.23.4.207.

20. Been Kwak, Hyunwoo Kim*, and Daewoong Kwon*, "Ferroelectric-gate tunneling field effect transistor one-transistor ternary contents addressable memory," Semiconductor Science and Technology, vol. 38, no. 5, pp. 055013-1-055013-7, Mar. 2023, doi: 10.1088/1361-6641/ac7d03.

21. Ki Yeong Kim#, Tae Hyun Hwang#, Young Suh Song, Hyunwoo Kim*, and Jang Hyun Kim*, "Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT" Micromachines, vol. 14, no. 2, pp. 334-1-334-10, Jan. 2023, doi: 10.3390/mi14020334.

22. Dong Gyu Park, Hyunwoo Kim*, and Jang Hyun Kim*, "Improvement Breakdown Voltage by a Using Crown-Shaped Gate" Electronics, vol. 12, no. 3, pp. 474-1-474-9, Jan. 2023, doi: 10.3390/electronics12030474.

2022

23. Jiwon Lee, Edward van Sieleghem, Hyunwoo Kim*, and Jan Genoe, "Analytical Model of the Vertical Pinned Photodiode," IEEE Transactions on Electron Devices, vol. 69, no. 10, pp. 5603-5606, Oct. 2022, doi: 10.1109/TED.2022.3198026.

24. Hyunwoo Kim#, Been Kwak#, Jang Hyun Kim, and Daewoong Kwon*, "Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor," IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 4046-4079, Jul. 2022, doi: 10.1109/TED.2022.3173245.

25. Been Kwak, Kitae Lee, Noh-Hwal Park, Seung Joon Jeon, Hyunwoo Kim*, and Daewoong Kwon*, "Recessed channel ferroelectric-gate field-effect transistor memory with ferroelectric layer between dual metal gates," IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1054-1057, Mar. 2022, doi: 10.1109/TED.2022.3144621.

26. Hyunwoo Kim, Jang Hyun Kim, and Daewoong Kwon*, "Schottky Contact-induced Hump Phenomenon by Bias and Optical Stressed in Amorphous Oxide Thin Film Transistor," Journal of Semiconductor Technology and Science, vol. 22, no. 1, pp. 24-29, Feb. 2022, doi: 10.5573/JSTS.2022.22.1.24.

2021

27. Hyun Woo Kim, and Daewoong Kwon*, "Gate-Normal Negative Capacitance Tunnel Field-Effect Transistor (TFET) with Channel Doping Engineering", IEEE Transactions on Nanotechnology, Vol. 20, No. 3, pp. 278-281, Mar. 2021 doi: 10.1109/TNANO.2021.3068572.

28. Hyun Woo Kim, and Daewoong Kwon*, "Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering", IEEE Journal of the Electron Device Society, Vol. 9, No. 3, pp. 359-364, Mar. 2021 doi: 10.1109/JEDS.2021.3066460.

29. Hyun Woo Kim, and Daewoong Kwon*, "Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter", IEEE Journal of the Electron Device Society, Vol. 9, No. 2, pp. 286-294, Feb. 2021 doi: 10.1109/JEDS.2021.3057456.

2020

30. Hyun Woo Kim, and Jang Hyun Kim*, "Study on the Influence of Drain Voltage on Work Function Variation Characteristics in Tunnel Field-Effect Transistor", Journal of Semiconductor Technology and Science, Vol. 20, No. 6, pp. 558-564, Dec. 2020 doi: 10.5573/JSTS.2020.20.6.558.

31. Hyun Woo Kim, and Daewoong Kwon*, "Double-gate tunnel-effect transistor with inner doping and spacer regions", Japanese Journal of Applied Physics, Vol. 59, No. 11, pp. 126505-1-126505-7, Nov. 2020 doi: 10.35848/1347-4065/abc926.

32. Jang Hyun Kim, Tae Chan Kim, Garam Kim, Hyun Woo Kim, and Sangwan Kim*, "Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors", IEEE Journal of the Electron Device Society, Vol. 8, No. 1, pp. 1345-1349, Oct. 2020 doi: 10.1109/JEDS.2020.3033313.

33. Hyun Woo Kim, Sihyun Kim, Kitae Lee, Junil Lee, Byung-Gook Park*, and Daewoong Kwon*, "Demonstration of Tunneling Field-Effect Transistor Ternary Inverter", IEEE Transactions on Electron Device, Vol. 67, No. 9, pp. 4541-4544, Oct. 2020 doi: 10.1109/TED.2020.3017186.

34. Hyun Woo Kim, and Daewoong Kwon*, "Impact of body-biasing for negative capacitance field-effect transistor", Journal of Physics Communications, Vol. 4, No. 9, pp. 095019-1-095019-7, Sep. 2020 doi: 10.1088/2399-6528/abb751.

35. Jang Hyun Kim, Hyun Woo Kim, Young Suh Song, Sangwan Kim*, and Garam Kim*, "Analysis of current variation with work function variation in L-shaped tunnel-field effect transistor", Micromachines, Vol. 11, No. 8, pp. 780-1-780-10, Aug. 2020 doi: 10.3390/mi11080780.

36. Hyun Woo Kim, and Daewoong Kwon*, "Analysis on tunnel field-effect transistor with asymmetric spacer", Applied Sciences, Vol. 10, No. 9, pp. 3054-1-3054-9, Apr. 2020 doi: 10.3390/app10093054.

~2019

37. Jang Hyun Kim, Hyun Woo Kim, Seong-Su Shin, Sangwan Kim*, and Byung-Gook Park*, "Transient analysis of tunnel field-effect transistor with raised drain", Journal of Nanoscience and Nanotechnology, Vol. 19, No. 10, pp. 6212-6216, Oct. 2019 doi: 10.1166/jnn.2019.17018.

38. Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim*, and Byung-Gook Park*, "Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain", Micromachines, Vol. 10, No. 1, pp. 30-1-30-10, Jan. 2019 doi: 10.3390/mi10010030.

39. Dae Woong Kwon, Hyun Woo Kim, Jang Hyun Kim, Euyhwan Park, Junil Lee, Wandong Kim, Sangwan Kim, Jong-Ho Lee, and Byung-Gook Park*, "Effects of localized body doping on switching characteristics of tunnel FET inverters with vertical structures", IEEE Transactions on Electron Device, Vol. 64, No. 4, pp. 1799-1805, Mar. 2017.

40. Taehyung Park, Jang Hyun Kim, Hyun Woo Kim, Euyhwan Park, Junil Lee, Byung-Gook Park, "Capacitance–Voltage Characterization of Tunnel Field Effect Transistors with a Si/SiGe Heterojunction", Journal of Nanoscience and Nanotechnology, Vol. 16, No. 10, pp. 10256-10259, Oct. 2016.

41. Junil Lee, Jang Hyun Kim, Dae Woong Kwon, Euyhwan Park, Taehyung Park, Hyun Woo Kim, and Byung-Gook Park, "Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor with High-K/Metal Gate Using Oxygen Scavenging Process", Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, pp. 4897-4900, May 2016.

42. Junil Lee, Dae Woong Kwon, Hyun Woo Kim, Jang Hyun Kim, Euyhwan Park, Taehyung Park, Sihyun Kim, Ryoongbin Lee, Jong-Ho Lee, and Byung-Gook Park, "Analysis on temperature dependent current mechanism of tunnel field-effect transistors", Japanese Journal of Applied Physics, Vol. 55, No. 6S1, pp. 06GG03-1-06GG03-4, Apr. 2016.

43. Jang Hyun Kim, Sang Wan Kim, Hyun Woo Kim, and Byung-Gook Park, "Vertical type double gate tunneling FET with thin tunnel barrier", Electronics Letters, Vol. 51, No. 9, pp. 718-720, Apr. 2015.

44. Hyun Woo Kim, Jong Pil Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Jang Hyun Kim, Euyhwan Park, Hyungjin Kim, and Byung-Gook Park, "Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique", Journal of Semiconductor Technology and Science, Vol. 14, No. 5, pp. 572-578, Oct. 2014.

45. Hyun Woo Kim, Jang Hyun Kim, Sang Wan Kim, Min-Chul Sun, Euyhwan Park, and Byung-Gook Park, "Tunneling field-effect transistor with Si/SiGe material for high current drivability", Japanese Journal of Applied Physics, Vol. 53, No. 6S, pp. 06JE12-1-06JE12-4, May. 2014

46. Min-Chul Sun, Hyun Woo Kim, Hyungjin Kim, Sang Wan Kim, Garam Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "VT-Modulation of planar tunnel field-effect transistors with ground-plane under ultrathin body and bottom oxide", Journal of Semiconductor Technology and Science, Vol. 14, No. 2, pp. 139-145, Apr. 2014.

47. Min-Chul Sun, Garam Kim, Jung Han Lee, Hyungjin Kim, Sang Wan Kim, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology", Microelectronic Engineering, Vol. 110, pp. 141-146, Oct. 2013.

48. Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Complementary-metal-oxide-semiconductor technology-compatible tunneling field-effect transistors with 14nm gate, sigma-shape source, and recessed channel", Japanese Journal of Applied Physics, Vol. 52, No. 6, pp. 06GE06-1-06GE06-5, Jun. 2013.

49. Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "L-Shaped tunneling field-effect transistors for complementary logic applications", IEICE Transactions on Electronics, Vol. E96-C, No. 5, pp. 634-638, May 2013.

50. Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Novel tunneling field-effect transistor with sigma-shape embedded SiGe sources and recessed channel", IEICE Transactions on Electronics, Vol. E96-C, No. 5, pp. 639-643, May 2013.

51. Hyun Woo Kim, Min-Chul Sun, Jung Han Lee, and Byung-Gook Park, "Investigation on suppression of nickel-silicide formation By fluorocarbon reactive ion etch (RIE) and plasma-enhanced deposition", Journal of Semiconductor Technology and Science, Vol. 13, No. 1, pp. 22-27, Feb. 2013.

52. Hyun Woo Kim, Jang Hyun Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Euyhwan Park, Hyungjin Kim, Kyung Wan Kim, and Byung-Gook Park, "A novel fabrication method for the nanoscale tunneling field effect transistor", Journal of Nanoscience and Nanotechnology, Vol. 12, No. 5, pp. 5592-5597, Jul. 2012.

53. Min-Chul Sun, Garam Kim, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Co-Integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology", Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, pp. 5313-5317, Jul. 2012.

54. Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, and Byung-Gook Park, "Design guideline of Si-based L-shaped tunneling field-effect transistors", Japanese Journal of Applied Physics, Vol. 51, No. 6, pp. 06FE09-1-06FE09-4, Jun. 2012.

55. Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, and Byung-Gook Park, "Comparative study on top- and bottom-source vertical-channel tunnel field-effect transistors", IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 826-830, May 2012.

56. Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, and Byung-Gook Park, "Study on threshold voltage control of tunnel field-effect transistors using VT-control doping region", IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 820-825, May 2012.

57. Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits", Japanese Journal of Applied Physics, Vol. 51, No. 4, pp. 04DC03-1-04DC03-5, Apr. 2012.

58. Garam Kim, Sang Wan Kim, Kyung-Chang Ryoo, Jeong-Hoon Oh, Min-Chul Sun, Hyun Woo Kim, Dae Woong Kwon, Jisoo Chang, Sunghun Jung, and Byung-Gook Park, "Split-Gate-Structure 1T DRAM for Retention Characteristic Improvement", Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, pp. 5603-5607, Jul. 2011.

59. Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Min-Chul Sun, Garam Kim, Hyun Woo Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, and Byung-Gook Park, "Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor", Applied Physics Letters, Vol. 97, No. 19, pp. 1935041-1935043, Nov. 2010.