To discover novel electron phases from artificial oxide interfaces, most world-leading groups are currently taking approaches by varying parameters, such as charge transfer, orbital and electronic reconstructions, strain variation, and dimensionality control. In addition to taking such efforts, we propose to perform more creative research by including three other control parameters: spin-orbit coupling, strain gradient, and defect control.

Oxide heterostructures present a tremendous opportunity for realizing new artificial electronic phases through controlled synthetic routes. Taking advantage of these opportunities raises challenges for theory, for synthesis, and for measurements. Over the years of research in oxides thin films, our combined efforts of collaboration with several experimental groups and a theory group have enhanced the understanding of  emergent phenomena in oxide heterostructures.