Publications & Coursework

PUBLICATIONS:

1. LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

IEEE Transactions on Nuclear Science, vol. 71, 2024, doi: 10.1109/TNS.2024.3357129.

2. Single-Event Burnout by Cf-252 Irradiation in Vertical β-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate

Jul 2023, Device Research Conference (DRC), Santa Barbara, CA, USA, pp. 1-2, doi: 10.1109/DRC58590.2023.10187004.

3. Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

IEEE Transactions on Nuclear Science, vol. 70, no. 4, pp. 394-400, April 2023, doi: 10.1109/TNS.2023.3242223.

4. Active Gate Driving of Cascoded SiC JFETs

Nov 2022, IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2022)

5. Single-Event Effects in SiC Power Devices for Space Applications

Aug 2022, Advanced Power Systems for Deep Space Exploration (APS4DS) Conference

6. Comparative Study of SiC MOSFET and JFET using an Active Gate Driver

Jun 2022, 4th IEEE Global Power, Energy and Communication Conference (GPECOM), 2022, pp. 63-68, DOI: 10.1109/GPECOM55404.2022.9815779.

7. Characterization of Wide-Bandgap SiC Field Effect Transistors and Their Active Gate Driving Circuit in High Power Applications

Aug 2021, ProQuest Dissertations Publishing, 28712864, ISBN: 9798535534473

8. Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability 

Jan 2018, ECS Journal of Solid State Science and Technology, DOI: 10.1149/2.0461712jss, ECS J. Solid State Sci. Technol. 2018 volume 7, issue 2, N1-N6

Featured: "The most-downloaded ECS Journal of Solid State Science and Technology articles by TIA during the first quarter of 2018" in Dielectric Science and Materials.

9. Reliability of Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates 

Apr 2017, ECS Transactions, DOI: 10.1149/07702.0099ecst, ECS Trans. 2017 Volume 77, Issue 2, 99-108 

PRESENTATIONS:

1. Heavy-Ion Test Methods and Data Analysis for Silicon Carbide Power Devices

Jul 2023, IEEE Nuclear & Space Radiation Effects Conference (NSREC), Kansas City, MO, USA

2. LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

Jul 2023, IEEE Nuclear & Space Radiation Effects Conference (NSREC), Kansas City, MO, USA

3. Radiation-Hardened Silicon Carbide Power Devices for Reliable Next-Generation Space Applications

Jul 2023, NASA Exploration Science Forum, University of Maryland, College Park, MD, USA

4. Single-Event Effects in Silicon Carbide High Voltage Power Devices for Lunar Exploration

Jun 2023, NASA Electronic Parts and Packaging (NEPP) Program, Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, MD, USA

5. Single-Event Effects in 3.3 kV SiC Power Devices during Heavy-Ion Irradiation

May 2023, 32nd Single-Event Effects (SEE) Symposium and Military and Aerospace Programmable Logic Devices (MAPLD) Workshop, La Jolla, CA, USA

6. Radiation Effects in Next-Gen SiC Power Devices for Reliable Space and Terrestrial Applications

Apr 2023, 2nd Annual ECE Day at Vanderbilt University, Nashville, TN, USA

7. Design of SEB-Hardened Silicon Carbide Power Devices for Space Applications

Dec 2022, 18th International School on the Effects of Radiation on Embedded Systems for Space Applications (SERESSA), European Council for Nuclear Research (CERN), Geneva, Switzerland

Award: 2nd among 25+ participants, and also recipient of CERN R2E Student Grant

8. Operation of Silicon Carbide Power Diodes under Lunar Night Temperatures

      Dec 2022, CLPS Survive the Night Technology 2022, NASA Glenn Research Center, Cleveland, OH, USA

9. Overview of Silicon Carbide Power Devices for Lunar Surface Power Applications

Nov 2022, LSIC Fall Meeting 2022, Virtual

10. Operation of Silicon Carbide Power Devices under Lunar Surface Temperatures

Jul 2022, LSIC Workshop on "Low Temperature Sub-kW Power and Energy Storage for the Lunar Surface", Virtual

11. Impact of Low Energy, Low-Range Ions on Failure Rate Considerations in SiC Power Diodes

Jul 2022, IEEE Nuclear & Space Radiation Effects Conference (NSREC), Provo, UT, USA

12. Development of SEB-Immune High Voltage SiC Power Devices for Lunar Applications

Jun 2022, NASA Electronic Parts and Packaging (NEPP) Program, Electronics Technology Workshop (ETW), Virtual

13. Radiation Effects in High Power SiC Devices 

Apr 2022, Inaugural ECE Day at Vanderbilt University, Nashville, TN, USA

Award: 3rd among 50+ participants

14.  Radiation Effects in High Power SiC Devices 

Dec 2021, 58th Design Automation Conference, San Francisco, CA, USA, Recognition: DAC 2021 Young Fellow

15. Reliability of High-k Gate Dielectrics on Si/Ge Substrates for Nanoscale CMOS Devices

Jul 2016, 9th International Undergraduate Summer Research Symposium at New Jersey Institute of Technology (NJIT), Newark, NJ, USA