Publications & Coursework

PUBLICATIONS:

1. Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 V and 4500 V SiC Power MOSFETs

IEEE Transactions on Nuclear Science, doi: 10.1109/TNS.2025.3563110.

2. Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN PIN Diodes

IEEE Transactions on Nuclear Science, doi: 10.1109/TNS.2025.3556730.

3. Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage

IEEE Transactions on Nuclear Science, vol. 72, no. 4, pp. 1418-1424, Apr. 2025.

4. Temperature Dependence of Heavy Ion Induced Leakage Current in SiC Power MOSFETs

IEEE Transactions on Nuclear Science, vol. 72, no. 4, pp. 1303-1308, Apr. 2025.

5. Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices 

IEEE Transactions on Nuclear Science, vol. 71, no. 8, pp. 1447-1454, Aug. 2024, doi: 10.1109/TNS.2024.3381964. 

6. LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

IEEE Transactions on Nuclear Science, vol. 71, no. 4, pp. 809-815, April 2024, doi: 10.1109/TNS.2024.3357129.

7. Single-Event Burnout by Cf-252 Irradiation in Vertical β-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate

Jul 2023, Device Research Conference (DRC), Santa Barbara, CA, USA, pp. 1-2, doi: 10.1109/DRC58590.2023.10187004.

8. Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

IEEE Transactions on Nuclear Science, vol. 70, no. 4, pp. 394-400, April 2023, doi: 10.1109/TNS.2023.3242223.

9. Active Gate Driving of Cascoded SiC JFETs

Nov 2022, IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2022)

10. Single-Event Effects in SiC Power Devices for Space Applications

Aug 2022, Advanced Power Systems for Deep Space Exploration (APS4DS) Conference

11. Comparative Study of SiC MOSFET and JFET using an Active Gate Driver

Jun 2022, 4th IEEE Global Power, Energy and Communication Conference (GPECOM), 2022, pp. 63-68, DOI: 10.1109/GPECOM55404.2022.9815779.

12. Characterization of Wide-Bandgap SiC Field Effect Transistors and Their Active Gate Driving Circuit in High Power Applications

Aug 2021, ProQuest Dissertations Publishing, 28712864, ISBN: 9798535534473

13. Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability 

Jan 2018, ECS Journal of Solid State Science and Technology, DOI: 10.1149/2.0461712jss, ECS J. Solid State Sci. Technol. 2018 volume 7, issue 2, N1-N6

Featured: "The most-downloaded ECS Journal of Solid State Science and Technology articles by TIA during the first quarter of 2018" in Dielectric Science and Materials.

14. Reliability of Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates 

Apr 2017, ECS Transactions, DOI: 10.1149/07702.0099ecst, ECS Trans. 2017 Volume 77, Issue 2, 99-108

PRESENTATIONS:

1. Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs

Oct 2024, International Conference on Silicon Carbide and Related Materials (ICSCRM), Raleigh, NC, USA

2. Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 4500 V SiC Power MOSFETs

Sep 2024, RADiation Effects on Components and Systems (RADECS), Maspalomas, Canary Islands, Spain

3. Single-Event Effects in Heavy-Ion Irradiated 3kV SiC Charge-Balanced Power Devices

Sep 2023, RADiation Effects on Components and Systems (RADECS), Toulouse, France

4. Heavy-Ion Test Methods and Data Analysis for Silicon Carbide Power Devices

Jul 2023, IEEE Nuclear & Space Radiation Effects Conference (NSREC), Kansas City, MO, USA

5. LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

Jul 2023, IEEE Nuclear & Space Radiation Effects Conference (NSREC), Kansas City, MO, USA

6. Radiation-Hardened Silicon Carbide Power Devices for Reliable Next-Generation Space Applications

Jul 2023, NASA Exploration Science Forum, University of Maryland, College Park, MD, USA

7. Single-Event Effects in Silicon Carbide High Voltage Power Devices for Lunar Exploration

Jun 2023, NASA Electronic Parts and Packaging (NEPP) Program, Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, MD, USA

8. Single-Event Effects in 3.3 kV SiC Power Devices during Heavy-Ion Irradiation

May 2023, 32nd Single-Event Effects (SEE) Symposium and Military and Aerospace Programmable Logic Devices (MAPLD) Workshop, La Jolla, CA, USA

9. Radiation Effects in Next-Gen SiC Power Devices for Reliable Space and Terrestrial Applications

Apr 2023, 2nd Annual ECE Day at Vanderbilt University, Nashville, TN, USA

10. Design of SEB-Hardened Silicon Carbide Power Devices for Space Applications

Dec 2022, 18th International School on the Effects of Radiation on Embedded Systems for Space Applications (SERESSA), European Council for Nuclear Research (CERN), Geneva, Switzerland

Award: 2nd among 25+ participants, and also recipient of CERN R2E Student Grant

11. Operation of Silicon Carbide Power Diodes under Lunar Night Temperatures

      Dec 2022, CLPS Survive the Night Technology 2022, NASA Glenn Research Center, Cleveland, OH, USA

12. Overview of Silicon Carbide Power Devices for Lunar Surface Power Applications

       Nov 2022, LSIC Fall Meeting 2022, Virtual

13. Operation of Silicon Carbide Power Devices under Lunar Surface Temperatures

        Jul 2022, LSIC Workshop on "Low Temperature Sub-kW Power and Energy Storage for the Lunar Surface", Virtual

14. Impact of Low Energy, Low-Range Ions on Failure Rate Considerations in SiC Power Diodes

        Jul 2022, IEEE Nuclear & Space Radiation Effects Conference (NSREC), Provo, UT, USA

15. Development of SEB-Immune High Voltage SiC Power Devices for Lunar Applications

        Jun 2022, NASA Electronic Parts and Packaging (NEPP) Program, Electronics Technology Workshop (ETW), Virtual

16. Radiation Effects in High Power SiC Devices 

       Apr 2022, Inaugural ECE Day at Vanderbilt University, Nashville, TN, USA

Award: 3rd among 50+ participants

17.  Radiation Effects in High Power SiC Devices 

 Dec 2021, 58th Design Automation Conference, San Francisco, CA, USA, Recognition: DAC 2021 Young Fellow

18. Reliability of High-k Gate Dielectrics on Si/Ge Substrates for Nanoscale CMOS Devices

Jul 2016, 9th International Undergraduate Summer Research Symposium at New Jersey Institute of Technology (NJIT), Newark, NJ, USA