Research Field
Research Field
Plasma source characterization is crucial for understanding the nature and behavior of plasmas across various applications, especially in the semiconductor industry. This characterization allows us to determine essential parameters like electron density, temperature, ion species, and their corresponding energies. Through in-depth analysis of these factors, we optimize plasma processes to ensure consistent performance from our plasma sources. Our laboratory boasts advanced diagnostic tools and methodologies for the precise measurement and evaluation of these critical parameters, driving forward innovations in plasma technology. In particular, we are actively developing machine learning-based plasma diagnostics that enable highly accurate and reliable analysis of plasma states, further enhancing the precision and efficiency of our characterization techniques.
Plasma source development is integral to advancing the capabilities and efficiencies of plasma-based applications, especially within the semiconductor and electric propulsion sectors. By innovating and refining plasma source designs, we can achieve enhanced control over plasma properties and improve process repeatability. Our laboratory is at the forefront of pioneering novel plasma source configurations, utilizing cutting-edge techniques and equipment. Through rigorous research and experimentation, we aim to push the boundaries of plasma technology, offering solutions that meet the evolving demands of the industry.
Projects & Gifts
Title: Development of Energy and Incident Angle Control Technique of Ribbon-type Ion Beam for Ion Beam Etching Process
Source: Public-Private Joint Investment for Advanced Semiconductor Talent Development, Ministry of Trade, industry and Energy, Republic of Korea
Role: Co-Principal Investigator
Performance Period: 04/01/2024 – 12/31/2026
Title: Kinetic Modelling
Source: Confidential, United States of America
Role: Principal Investigator
Performance Period: 03/13/2023 – 10/31/2023
Title: Exploring the Instability and Transport Dynamics of Partially Magnetized Plasmas in E×B Source for Semiconductor Process
Source: Mid-career Researcher Program, National Research Foundation of Korea, Republic of Korea
Role: Principal Investigator
Performance Period: 03/01/2023 – 02/28/2026
Title: Kinetic Simulation of Narrow Gap Discharge
Source: Princeton Collaborative Low-Temperature Plasma Research Facility, Department of Energy, Office of Science, Fusion Energy Sciences, United States of America
Role: Principal Investigator
Performance Period: 03/01/2022 – 10/31/2022
Title: Development of Plasma and Ion Beam Diagnostics for Multi-pulsed Negative Ion Source
Source: Nuclear Convergence Technology Development, National Research Foundation of Korea, Republic of Korea
Role: Principal Investigator
Performance Period: 03/01/2021 – 12/31/2022
Title: Experimental Study on Transport of Electron and Negative Ion at the Boundary between Electron-ion and Ion-ion Plasma
Source: Young Researcher Program, National Research Foundation of Korea, Republic of Korea
Role: Principal Investigator
Performance Period: 03/01/2020 – 02/28/2023
Title: Development of the Most Effective Negative Hydrogen Volume Ion Source in Application of Neutral Beam Injection Systems for Future Nuclear Fusion Reactor
Source: Global Ph.D. Fellowship, National Research Foundation of Korea, Republic of Korea
Role: Principal Investigator
Performance Period: 03/01/2015 – 02/28/2018
Title: Ion Source Characterization Study
Source: Confidential, United States of America
Role: Co-Principal Investigator
Performance Period: 10/28/2019 – 04/30/2021