Asia Pacific Physics Week 2024 (APPW2024)

Friday, Nov. 8, 2024 

3:30 PM - 4:10 PM  Plenary Talk: Kenji Shiraishi (Nagoya University) 

Nano-Scale Interfacial Science for Realizing Mass Production of Modern Electron Devices

Kenji Shiraishi

Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 4648601, Japan

Graduate School of Engineering, Nagoya University, Nagoya 4648603, Japan

Recent electron devices are composed of nano-scale interfaces. Therefore, realizing modern nano-scale electron devices, understanding of nano-scale interfaces are very important. In this presentation, I introduce some examples that nano-scale science has given decisive roles for the mass production of modern electron devices.

  The first example is high-k metal gate LSI [1]. In the 2003 semiconductor roadmap, high-k dielectrics with poly-Si gates are the main target. However, poly-Si gate technologies were eliminated after we have created new nano-scale interface concepts, because our new concept concluded that high-k dielectric could not be used with poly-Si gates [1]. The second example is vibration powered generator with the K-incorporated SiO2. In this vibration powered generator, the K-incorporated SiO2 is negatively charged and this can become important building blocks of electrets in vibration powered generators. Our group has found that new local structures containing SiO5 with five-fold-coordinate Si atoms are the origin of negative charges in the K-incorporated SiO2 [2]. Moreover, we have proposed the process proposal in the fabrication process of vibration powered generator with the K-incorporated SiO2 [3], leading to the success of mass production of new vibration power generators. 

As discussed above, creation of new nano-scale interface concept is crucial for the fabrication and mass production of modern electron devices.

References

[1] K. Shiraishi et al, Jpn. J. Appl. Phys. 43, L1413 (2004).

[2] T. Nakanishi et al. Appl. Phys. Lett. 117, 193902 (2020).

[3] Y. Ohata et al. Appl. Phys. Lett. 121, 243903 (2022).