RESEARCH

Expertise in the development of high-precision semiconductor fabrication processes, with a focus on tailoring plasma-material interactions to achieve extreme selectivity and profile control:

Selective Atomic Layer Etching (ALE): Achieving sub-nanometer precision and atomic-scale selectivity for complex 3D architectures.

Cryogenic & Directional Etching: Leveraging low-T plasma chemistry and precise profile engineering (anisotropic/isotropic) for damage-free, HAR structures.

Advanced Plasma Engineering: Optimization of VHF (30-162 MHz), Dual-frequency, and Pulsed plasma processes for seamless material integration.

3D Heterogeneous Integration