US patent No. 10,379,945, "Asymmetric Error Correction and Flash-Memory Rewriting Using Polar Codes," E. En Gad, Y. Li, J. Kliewer, M. Langberg, A. Jiang and J. Bruck, issued on 8/13/2019.

US patent No. 9,983,808, "NAND Flash Reliability with Rank Modulation," Y. Li, E. En Gad, A. Jiang and J. Bruck, issued on 5/29/2018.

US patent No. 9,946,475, "Joint Rewriting and Error Correction in Write-Once Memories," A. Jiang, Y. Li, E. En Gad, M. Langberg and J. Bruck, issued on 4/17/2018.

US patent No. 9,916,197, "Rank-Modulation Rewriting Codes for Flash Memories," A. Jiang, E. En Gad, J. Bruck and E. Yaakobi, issued on 3/13/2018.

US patent No. 9,666,280, “Flash Memories Using Minimum Push Up, Multi-Cell and Multi- Permutation Schemes for Data Storage,” A. Jiang, E. En Gad and J. Bruck, issued on 5/30/2017.

South Korea patent US-857972-04-KR-NAT, “Joint Rewriting and Error Correction in Write-Once Memories,” A. Jiang, J. Bruck, E. En Gad, M. Langberg and Y. Li, issued on 2/24/2017.

US patent No. 9,230,652, “Flash Memories using Minimum Push Up, Multi-Cell and Multi- Permutation Schemes for Data Storage,” A. Jiang, E. En Gad and J. Bruck, issued on 1/5/2016.

US patent No. 9,086,955, “Rank-Modulation Rewriting Codes for Flash Memories,” A. Jiang, E. En Gad, J. Bruck, and E. Yaakobi, issued on 7/21/2015.

US patent No. 8,780,620, “Information Representation and Coding for Nonvolatile Memories,” A. Jiang, J. Bruck, Z. Wang, and H. Zhou, issued on 7/15/2014.

US patent No. 8,245,094, “Rank Modulation for Flash Memories,” A. Jiang, R. Mateescu, M. Schwartz, and J. Bruck, issued on 8/14/2012.

US patent No. 8,225,180, “Error Correcting Codes for Rank Modulation,” A. Jiang, M. Schwartz, and J. Bruck, issued on 7/17/2012.

US patent No. 7,752,332, “Geometric Routing in Wireless Networks,” A. Jiang, J. Gao and J. Bruck, issued on 7/6/2010.

US patent No. 7,656,706, “Storing Information in a Memory,” A. Jiang, V. Bohossian and J. Bruck, issued on 2/2/2010.