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Front-End of Line (FEOL) for the Next Generation CMOS Technology
Front-End of Line (FEOL) for the Next Generation CMOS Technology
- Source/Drain Engineering for Germanium/III-V MOSFET (FinFET)
- Gate Passivation Technology for High-k/Metal Gate of Germanium/III-V MOSFET (FinFET)
- Sub-14nm Germanium/III-V FinFET Technology
Back-End of Line (BEOL) for the Next Generation CMOS Technology
Back-End of Line (BEOL) for the Next Generation CMOS Technology
- Plasma Induced Etch/Ash Damage Reduction to Low-k Dielectric for Low-k Interconnections
- Model Development and Simulation for Investigation of Plasma Induced Etch/Ash Damage
Germanium-based Near-IR Optielectronics for Optical Interconnections
Germanium-based Near-IR Optielectronics for Optical Interconnections
- Ge Light Emitting Devices for the Future Generation Optical Communications
- Ge PIN/MSM Photodetectors for Optical Communications and IR Sensing Applications
High Qaulity Single Crystal Germanium Growth for 3D Integrated Circuits
High Qaulity Single Crystal Germanium Growth for 3D Integrated Circuits
- Heteroepitaxial Germnaium Growth on Selective Area with LCPVD/MOCVD Process
- Crystallization of Germanium Film using Thermal Annealing/e-beam Irradiation
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