Yujin Seo, Choog Ki Kim, Tae In Lee, Wan Sik Hwang, Hyun-Yong Yu, Yang Kyu Choi and Byung Jin Cho, "Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks," IEEE Transactions on Electron Devices (Accepted)
Yujin Seo, Tae In Lee, Hyun Jun Ahn, Jung Min Moon, Wan Sik Hwang, Hyun-Yong Yu, and Byung Jin Cho, "Fermi Level De–pinning in Ti/GeO2/n–Ge via the Interfacial Reaction between Ti and GeO2," IEEE Transactions on Electron Devices (Accepted)
Yujin Seo, Tae In Lee, Chang Mo Yoon, Bo-Eun Park, Wan Sik Hwang, Hyungjin Kim, Hyun-Yong Yu, and Byung Jin Cho, "The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks," IEEE Transactions on Electron Devices, Vol.64, No.8, pp.3303-3307 (2017) PDF
June Park, Dong-Ho Kang, Jong-Kook Kim, Jin-Hong Park, and Hyun-Yong Yu, "Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field Effect Transistor," IEEE Electron Device Letters, Vol.38, No.8, pp.1172-1175 (2017) PDF
Seung-Geun Kim, Gwang-Sik Kim, Seung-Hwan Kim, Sun-Woo Kim, June Park, and Hyun-Yong Yu, "Effect of Metal-Interlayer-Semiconductor Structure on High-Quality Silicon-Germanium (SiGe) Films with Various Ge Concentrations," Journal of Nanoscience and Nanotechnology, Vol.17, No.10, pp.7323-7326 (2017) PDF
Hyun Jun Ahn, Jungmin Moon, Yujin Seo, Tae In Lee, Choong Ki Kim, Hyun-Yong Yu, Wan Sik Hwang, and Byung Jin Cho, "Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film," IEEE Transactions on Electron Devices, Vol.64, No.6, pp.2599-2603 (2017) PDF
Tae In Lee, Yujin Seo, Jungmin Moon, Hyun Jun Ahn, Hyun-Yong Yu, Wan Sik Hwang, and Byung Jin Cho, "Lowering the Effective Work Function via Oxygen Vacancy Formation on the GeO2/Ge Interface," Solid-State Electronics, Vol.130, pp.57–62 (2017) PDF
Juhan Ahn, Jeong-Kyu Kim, Jong-Kook Kim, Jinok Kim, Jin-Hong Park, and Hyun-Yong Yu, "Impact of Metal Nitrides on Contact Resistivity of Metal-Interlayer-Semiconductor Source/Drain in Sub-14 nm n-type Si FinFET," Journal of Nanoscience and Nanotechnology, Vol.17, No.5, pp.3084–3088 (2017) PDF
Gwang-Sik Kim, Sun-Woo Kim, Seung-Hwan Kim, June Park, Yujin Seo, Byung Jin Cho, Changhwan Shin, Joon Hyung Shim, and Hyun-Yong Yu, "Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack," ACS Applied Materials & Interfaces, Vol.8, No.51, pp.35419–35425 (2016) PDF Supplement
Sun-Woo Kim, Seung-Hwan Kim, Gwang-Sik Kim, Changhwan Choi, Rino Choi, and Hyun-Yong Yu, "The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction,"ACS Applied Materials & Interfaces, Vol.8, No.51, pp.35614–35620 (2016) PDF Supplement
Hyunwoo Choi, Hyunjae Lee, June Park, Hyun-Yong Yu, Tae Geun Kim, and Changhwan Shin, "Experimental Evidence of Negative Quantum Capacitance in Topological Insulator for Sub-60-mV/decade Steep Switching Device," Applied Physics Letters, Vol.109, No.20 pp.203505 (2016) PDF
Changho Shin, Jeong-Kyu Kim, Gwang-Sik Kim, Hyunjae Lee, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho, and Hyun-Yong Yu, "Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain," IEEE Transactions on Electron Devices, Vol.63, No.11, pp.4167-4172 (2016) PDF
Seung-Hwan Kim, Gwang-Sik Kim, Seyong Oh, Jin-Hong Park, and Hyun-Yong Yu, "Contact Resistance Reduction Using Dielectric Materials of Nanoscale Thickness on Silicon for Monolithic 3D Integration," Journal of Nanoscience and Nanotechnology, Vol.16, No.12, pp.12764-12767 (2016) PDF
Yongkook Park, Hyung-Youl Park, Dong-Ho Kang, Gwang-Sik Kim, Donghwan Lim, Hyun-Yong Yu, Changhwan Choi, and Jin-Hong Park "The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector," Journal of Nanoscience and Nanotechnology, Vol.16, No.11, pp.11745-11749 (2016) PDF
Gwang-Sik Kim, Sun-Woo Kim, Hwan-Jun Zang, Minwoo Ha, Sang Soo Park, Choon Hwan Kim, and Hyun-Yong Yu, "2-Dimensional Analysis of Plasma Ashing Damage Induced by Oxygen-Based Plasmas along Nanopores in SiOCH Film for a Nanoscale BEOL Process," Journal of Nanoscience and Nanotechnology, Vol.16, No.11, pp.11766-11770 (2016) PDF
Seung-Hwan Kim, Sun-Woo Kim, Gwang-Sik Kim, Jinok Kim, Jin-Hong Park, and Hyun-Yong Yu, "Ar Plasma Treatment for III-V Semiconductor-based Transistor Source/Drain Contact Resistance Reduction," Journal of Nanoscience and Nanotechnology, Vol.16, No.10, pp.10393-10396 (2016) PDF
Hwan-Jun Zang, Gwang-Sik Kim, Gil-Jae Park, Yong-Soo Choi, and Hyun-Yong Yu, "Asymmetrically Contacted Germanium Photodiode Using Metal-Interlayer-Semiconductor-Metal Structure for Extremely Large Dark Current Suppression," Optics Letters, Vol.41, No.16, pp.3686-3689 (2016) PDF
Dong-Ho Kang, Seong-Taek Hong, Aely Oh, Seung-Hwan Kim, Hyun-Yong Yu, and Jin-Hong Park "Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)," Materials Research Bulletin, Vol. 82, pp. 26-30 (2016) PDF
Seo-Hyeon Jo, Dong-Ho Kang, Jaewoo Shim, Jaeho Jeon, Min Hwan Jeon, Gwangwe Yoo, Jinok Kim, Jaehyeong Lee, Geun Young Yeom, Sungjoo Lee, Hyun-Yong Yu, Changhwan Choi, and Jin-Hong Park, "High Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique," Advanced Materials, Vol. 28, No.24, pp.4824-4831 (2016) PDF
Gwang-Sik Kim, Gwangwe Yoo, Yujin Seo, Seung-Hwan Kim, Karam Cho, Byung Jin Cho, Changhwan Shin, Jin-Hong Park, and Hyun-Yong Yu, "Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure," IEEE Electron Device Letters, Vol.37, No.6, pp.709-712 (2016) PDF
Juhan Ahn, Jeong-Kyu Kim, Sun-Woo Kim, Gwang-Sik Kim, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho, and Hyun-Yong Yu, "Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10 nm n-type Ge FinFET,"IEEE Electron Device Letters, Vol.37, No.6, pp.705-708 (2016) PDF
Changho Shin, Jeong-Kyu Kim, Changhwan Shin, Jong-Kook Kim, and Hyun-Yong Yu, "Threshold Voltage Variation-Immune FinFET Design with Metal-Interlayer-Semiconductor Source/Drain Structure," Current Applied Physics, Vol.16, No.6, pp.618-622 (2016) PDF
Seung-Hwan Kim, Gwang-Sik Kim, Sun-Woo Kim, Jeong-Kyu Kim, Changhwan Choi, Jin-Hong Park, Rino Choi, and Hyun-Yong Yu, "Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure with SF6 Plasma Treatment,"IEEE Electron Device Letters, Vol.37, No.4, pp.373-376 (2016) PDF
Hyung-Youl Park, Woo-Shik Jung, Dong-Ho Kang, Jaeho Jeon, Gwangwe Yoo, Yongkook Park, Jinhee Lee, Yun Hee Jang, Jaeho Lee, Seongjun Park, Hyun-Yong Yu, Byungha Shin, Sungjoo Lee, and Jin-Hong Park, "Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design," Advanced Materials, Vol.28, pp.864-870 (2016) PDF Supplement
Jaewoo Shim, Gwangwe Yoo, Dong-Ho Kang, Woo-Shik Jung, Young-Chul Byun, Hyoungsub Kim, Won Tae Kang, Woo Jong, Yu, Hyun-Yong Yu, Yongkook Park, and Jin-Hong Park "Theoretical and Experimental Investigation of Graphene/High-k/p-Si Junctions," IEEE Electron Device Letters, Vol.37, No.1, pp.4-7 (2016) PDF
Yujin Seo, Sukwon Lee, Seung-heon Chris Baek, Wan Sik Hwang, Hyun-Yong Yu, Seok-Hee Lee, and Byung Jin Cho, "The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts," IEEE Electron Device Letters, Vol.36, No.10, pp.997-1000 (2015) PDF
Seung-Hwan Kim, Gwang-Sik Kim, Jeong-Kyu Kim, Jin-Hong Park, Changhwan Shin, Changhwan Choi, and Hyun-Yong Yu, "Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High Electron Mobility Transistors," IEEE Electron Device Letters, Vol.36, No.9, pp.884-886 (2015) PDF
Gwang-Sik Kim, Seung-Hwan Kim, Jeong-Kyu Kim, Changhwan Shin, Jin-Hong Park, Krishna C. Saraswat, Byung Jin Cho, and Hyun-Yong Yu, "Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET," IEEE Electron Device Letters, Vol.36, No.8, pp.745-747 (2015) PDF
Dong-Ho Kang, Myung-Soo Kim, Jaewoo Shim, Jeaho Jeon, Hyung-Youl Park, Woo-Shik Jung, Hyun-Yong Yu, Chang-Hyun Pang, Sungjoo Lee, and Jin-Hong Park, "High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping," Advanced Functional Materials, Vol.25, No.27, pp.4219-4227 (2015) PDF Supplement
Jaesung Jo, Woo Young Choi, Jung-Dong Park, Jae Won Shim, Hyun-Yong Yu, and Changhwan Shin, "Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices," ACS Nano Letters, Vol.15, No.7, pp.4553-4556 (2015) PDF Supplement
Hyung-Youl Park, Jin-Sang Yoon, Jeaho Jeon, Jinok Kim, Hyun-Yong Yu, Sungjoo Lee, and Jin-Hong Park, "Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene," Organic Electronics, Vol.22, pp.117-121 (2015) PDF
Seung Chan Heo, Donghwan Lim, Woo Suk Jung, Rino Choi, Hyun-Yong Yu, and Changhwan Choi, "Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing,"Microelectronic Engineering, Vol.147, pp.239-243 (2015) PDF
Na Liu, Ki Nam Yun, Hyun-Yong Yu, Joon Hyung Shim, and Cheol Jin Lee, "High-performance carbon nanotube thin-film transistors on flexible paper substrate," Applied Physics Letters, Vol.106, No.10, p.103106 (2015) PDF
Feyza B. Oruc, Levent E. Aygun, Inci Donmez, Necmi Biyikli, Ali K. Okyay, and Hyun-Yong Yu, "Low temperature atomic layer deposited ZnO photo thin film transistors," Journal of Vacuum Science & Technology A, Vol.33, No.1, p.01A105 (2015) PDF
Jeong-Kyu Kim, Gwang-Sik Kim, Hyohyun Nam, Changhwan Shin, Jin-Hong Park, Jong-Kook Kim, Byung Jin Cho, Krishna. C. Saraswat, and Hyun-Yong Yu, "The Efficacy of Metal-Interfacial layer-Semiconductor Source/Drain Structure on Sub-10nm n-type Ge FinFET Performances," IEEE Electron Device Letters, Vol.35, No.12, pp.1185-1187 (2014) PDF
Gwang-Sik Kim, Jeong-Kyu Kim, Seung-Hwan Kim, Jaesung Jo, Changhwan Shin, Jin-Hong Park, Krishna C. Saraswat, and Hyun-Yong Yu, "Specific Contact Resistivity Reduction through Ar Plasma-Treated TiO2-x Interfacial Layer to Metal/Ge Contact," IEEE Electron Device Letters, Vol.35, No.11, pp.1076-1078 (2014) PDF
Jaewoo Shim, Dong-Ho Kang, Gwangwe Yoo, Seong-Teak Hong, Woo-Shik Jung, Bong Jin Kuh, Beomsuk Lee, Dongjae Shin, Kyoungho Ha, Gwang-Sik Kim, Hyun-Yong Yu, Jungwoo Baek, and Jin-Hong Park, "Germanium p-i-n Avalanche Photo-detector fabricated by Point Defect Healing Process," Optics Letters, Vol.39, No.14, pp.4204-4207 (2014) PDF
Jeong-Kyu Kim, Gwang-Sik Kim, Changhwan Shin, Jin-Hong Park, K. C. Saraswat, and Hyun-Yong Yu, "Analytical Study of Interfacial Layer Doping Effect on Contact Resistivity in Metal-Interfacial Layer-Ge Structure," IEEE Electron Device Letters, Vol.35, No.7, pp.705-707 (2014) PDF
Hyun-Yong Yu, E. Battal, A. K. Okyay, Jaewon Shim, Jin-Hong Park, Jung Woo Baek, K. C. Saraswat, "Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers," Current Applied Physics, Vol.13, p.1060 (2013) PDF
Seong-Uk Yang, Seung-Ha Choi, Jongtaer Lee, Jeehwan Kim, Woo-Shik Jung, Hyun-Yong Yu, Yonghan Roh, Jin-Hong Park, "Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode," Journal of Alloys and Compounds, Vol.561, p.228 (2013) PDF
Hyun-Wook Jung, Woo-Shik Jung, Hyun-Yong Yu, Jin-Hong Park, "Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization," Journal of Alloys and Compounds, Vol.561, p.231 (2013) PDF
In-Yeal Lee, Hyung-Youl Park, Jin-Hyung Park, Jinyeong Lee, Woo-Shik Jung, Hyun-Yong Yu, Sang-Woo Kim, Gil-Ho Kim, Jin-Hong Park, "Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter," Organic Electronics, Vol.14, p.1586 (2013) PDF
J. Shin, J. Shim, J. Lee, S.-H. Choi, W.-S Jung, Hyun-Yong Yu, Y. Roh, J.-H. Park, "Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction," IEEE Electron Device Letters, Vol.33, No.10, pp.1363-1365 (2012) PDF
S. Jeong, H. Park, M. Lim, W. Jung, Hyun-Yong Yu, Y. Roh, J.-H. Park, "Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions," Organic Electronics, Vol.13, No.9, pp.1511-1515 (2012) PDF
M.-H. Lim, I.-Y Lee, S.-G. Jeong, J. Lee, W.-S. Jung, Hyun-Yong Yu, G.-H Kim, Y. Roh, J.-H. Park, "Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain," Organic Electronics, Vol.13, No.6, pp.1056-1059 (2012)PDF
Hyun-Yong Yu, A. K. Okyay, J.-H. Park, K.C. Saraswat, "Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics," IEEE Electron Device Letters, Vol.33, No.4, pp.579-581 (2012) PDF
E. Onaran, M. C. Onbasli, A Yesilyurt, Hyun-Yong Yu, A. M. Nayfeh, A. K. Okyay, "Silicon-Germanium multi-quantum well photodetectors in the near infrared," Optics Express, Vol.20, No.7, pp.7608-7615 (2012) PDF
J.-H Park, D. Kuzum, Hyun-Yong Yu, and K. C. Saraswat, "Optimization of Germanium (Ge) n+/p and p+/n Junction Diodes and Sub 380 ºC Ge CMOS Technology for Monolithic 3D Integration," IEEE Transactions on Electron Devices, Vol.58, No.8, pp.2394-2400 (2011) PDF
S.-L Cheng, G. Shambat, J. Lu, Hyun-Yong Yu, Krishna Saraswat, T. I. Kamins, J. Vuckovic, and Y. Nishi, "Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon," Applied Physics Letters, Vol.98, p.211101 (2011) PDF
J.-H Park, and Hyun-Yong Yu, "Dark-Current Suppression in Erbium-Germanium-Erbium Photodetector with Asymmetric Electrode Area," Optics Letters, Vol.36, No.7, pp.1182-1184 (2011) PDF
Hyun-Yong Yu, M. Kobayashi, J.-H. Park, Y. Nishi, K. C. Saraswat, "Novel Germanium n-MOSFETs with Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration," IEEE Electron Device Letters, Vol.32, No.4, pp.446-448 (2011) PDF
S.-L Cheng, J. Lu, G. Shambat, Hyun-Yong Yu, K. C. Saraswat, J. Vuckovic, and Y. Nishi, "Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si," ECS Transactions, Vol.33, No.6, pp.545-554 (2010). PDF
Hyun-Yong Yu, S. Cheng, J.-H. Park, A. K. Okyay, M. Onbasli, B. Ercan, Y. Nishi, and K.C. Saraswat, "High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing," Applied Physics Letters, Vol.97, p.063503 (2010) PDF
Hyun-Yong Yu, D. Kim, S. Ren, M. Kobayashi, D. A. B. Miller, Y. Nishi, K.C.Sarasawt, "Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si," Applied Physics Letters, Vol.95, p.161106 (2009) PDF
Hyun-Yong Yu, S. Ren, W. Jung, D. A. B. Miller, K.C.Sarasawt, "High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration," IEEE Electron Device Letters, Vol.30, No.11, p.1161 (2009) PDF
Hyun-Yong Yu, S. Cheng, P. B. Griffin, Y. Nishi, K.C. Saraswat, "Germanium in-situ doped epitaxial growth on Si for high performance n+/p junction diode," IEEE Electron Device Letters, Vol.30, No.9, p.1002 (2009) PDF
S. Cheng, J. Lu, G. Shambat, Hyun-Yong Yu, K. C. Saraswat, J. Vuckovic, Y. Nishi, "Room temperature 1.6um electroluminescence from Ge light emitting diode on Si substrate", Optics Express, Vol.17, pp.10019-10024 (2009) PDF
Hyun-Yong Yu, M. Ishibashi, M. Kobayashi, J. Park, K.C. Saraswat, "P-channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si," IEEE Electron Device Letters, Vol.30, No.6, p.675 (2009) PDF