Chemical vapor deposition System Furnace
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Chemical vapor deposition System Furnace Specification
Chemical vapor deposition System
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is used in the semiconductor industry to produce thin films and 2D materials.
Thermal CVD System for Graphene & 2D Materials Growth with 3 Horizontal Tube Reactors stacked over each other.
Technical characteristics
CVD System :
Reactors 1:
o 2" (50mm) OD Quartz Tube, 1500mm Length
o 3-zone [150/250/150mm] (Max temperature 1,400°C)
Reactors 2:
o 2" (50mm) OD Quartz Tube, 1500mm Length
o 1-zone [150mm] with Max temp. 1,100°C with ramp >20°C/min (example:Kanthal Wire)
o Heating Jacket (Max. 300°C)
Reactors 3:
o 2" (50mm) OD Quartz Tube, Length 1500mm
o 3-zone [150/250/150mm] with Max. 1,100°C with ramp >20°C/min (example:Kanthal Wire)
Shared Turbo Pump:
o 200 l/s
o Includes Convection Gauge, Ion Gauge & Gate Valve
Shared Control, Gas Delivery & Pumping Components
o System Control PC Tower with 19" Display
o LabVIEW User Front End (Shared by All Reactors)
o Ar, H2, CH4 & N2 Mass Flow Controls (MFC), Plus Two Spare MFC Slots
o Auto Pressure Control (Motorized TV w/ 10 & 1000 Torr CMs)
o Dry Scroll Pump (250l/m)
o Liquid nitrogen (LN2) Cold Trap
o H2 Dilution Kit
Optional Spares
Vacuum system (Rotary vane vacuum pump, Diffusion pump, Molecular pump)
Atmosphere system (Float flow meter, Mass flow meter)
Quick release flange, Multi-way flange
Touching screen temperature controller