Journals

1. Yi Yang, H. Yu, Y.-C. Kuo, C.-Y. Huang, M.-C. Tsai, Amratansh Gupta, A. Navolotskaia, Y. Chong, W.-T. Lin, S. Yadav et al., “Hole Generation Triggered Dynamic Drain Induced Barrier Lowering of RF GaN MIS-HEMTs,” IEEE Electron Device Letters, vol. 47, no. 9, pp. 1740-1743, Sept. 2026. DOI: 10.1109/LED.2026.3714531.

2. Ying-Chun Kuo, H. Yu, N. de Almeida Braga, J. Fang, Amratansh Gupta, S. Yadav, A. Sibaja-Hernandez, A. Alian, U. Peralagu, N. Collaert, and B. Parvais, “Semi-On State Hole Generation in GaN HEMTs: Experimental Evidence and TCAD Modeling,” IEEE Electron Device Letters, vol. 47, no. 9, pp. 1740-1743, Sept. 2026. DOI: 10.1109/LED.2026.3711655. [Featured in Editor's Pick for Sept 2026 Issue]

3. M.-C. Tsai, Y.-C. Kuo, H. Yu, N. de Almeida Braga, Y. Yang, T.-H. Lin, J. Fang, W.-T. Lin, A. Navolotskaia, B. O’Sullivan, Amratansh Gupta, S. Yadav, A. Alian, U. Peralagu, N. Collaert, and B. Parvais, “Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress,” IEEE Transactions on Electron Devices, Aug. 2025. DOI: 10.1109/TED.2025.3600561.

4. Rajarshi Roy Chaudhuri*, Amratansh Gupta*, Vipin Joshi*, Rasik R. Malik, Sayak Dutta Gupta, and Mayank Shrivastava, "Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress Induced Dynamic RON Behaviour in AlGaN/GaN HEMTs: Part-II", IEEE Transactions on Electron Devices  2023, vol. 70, no. 12, pp. 6183-6189.  DOI:10.1109/TED.2023.3300652. (* Joint First Authors).

5.  Rajarshi Roy Chaudhuri*, Amratansh Gupta*, Vipin Joshi*, Rasik R. Malik, Sayak Dutta Gupta, and Mayank Shrivastava, "Physical Insights into Nano-Second Time Scale Cyclic Stress Induced Dynamic ON-Resistance Behaviour in AlGaN/GaN HEMTs: Part-I", IEEE Transactions on Electron Devices 2023, vol. 70, no. 12, pp. 6175-6182. DOI: 10.1109/TED.2023.3323439.  (* Joint First Authors).

Conferences

1. Sachin Yadav, M Asad, B.K. Esfeh,  Amratansh Gupta, A Rathi, R. ElKashlan, S Banerjee, et al. "28V GaN HEMTs on 200mm Si Substrate for 6G Infrastructure Applications with 5.9W/mm Output Power and 46.5% PAE at 13GHz",  IEEE International Electron Device Meeting (IEDM) 2026. [Accepted🎉]

2. Hao Yu, Amratansh Gupta, Ying-Chun Kuo, Y. Chong, T.-L. Wu, S. Yadav, R. ElKashlan, et al. "Dynamic ON-State Breakdown of GaN-on-Si HEMT",  IEEE International Reliability Physics Symposium (IRPS) 2026. DOI: 10.1109/IRPS61424.2026.11499284. 

3. Anna Navolotskaia, H. Yu, Y.-C. Kuo, Y. Yang, C.-Y. Huang, W.-T. Lin, Y. Chong, B. O’Sullivan, A. Rathi, Amratansh Gupta et al., “Understanding Gate Breakdown Mechanisms in RF GaN MIS-HEMTs With Thin Gate SiN,” IEEE International Reliability Physics Symposium (IRPS), 2026. DOI:10.1109/IRPS61424.2026.11499172.

4. Ying-Chun Kuo, Hao Yu, Nelson de Almeda Braga, J. Fang,  Amratansh Gupta, S. Yadav, A. Alian, U. Peralagu, N. Collaert, and B. Parvais, "Modeling of Hole Generation Process in AlGaN/GaN HEMTs", IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2025. (IEEE Xplore)

5. Amratansh Gupta, Hao Yu, S. Yadav, A. Alian, U. Peralagu, E. Jang, Y.-C. Kuo, N. Collaert, and B. Parvais, "Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMT", IEEE International Reliability Physics Symposium (IRPS) 2025. (IEEE Xplore)

6. Hao Yu, R. ElKashlan, M.-C. Tsai, Y. Yang, M. Guenach, Y.-C. Kuo, S. Yadav, B. O’Sullivan, A. Rathi, Amratansh Gupta, D. Xiao, C. Desset, A. Alian, U. Peralagu, V. Afans’ev, T.-L. Wu, B. Parvais, and N. Collaert, "Perspectives on GaN MISHEMT Power Amplifier vs Positive Gate Bias Instability", IEEE International Reliability Physics Symposium (IRPS) 2025. (IEEE Xplore) [Inducted among IRPS 2025 Highlighted Papers]  

7. Yi Yang, Hao Yu, M.-C. Tsai, W-T Lin, Y.-C. Kuo, B. O'Sullivan, A. Rathi,  Amratansh Gupta, S. Yadav, A. Alian, U. Peralagu, B. Parvais, N. Collaert, and T.-L Wu, "Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses", IEEE International Reliability Physics Symposium (IRPS) 2025. (IEEE Xplore)

8. Rajarshi Roy Chaudhuri, V. Joshi, Amratansh Gupta, T. Joshi, R.R. Malik, MA. Mir, and Mayank Shrivastava, "Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences", IEEE International Reliability Physics Symposium (IRPS) 2023, March 2023. (IEEE Xplore)

9. Amratansh Gupta, M.D. Ganeriwala, and Nihar R. Mohapatra, “A Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double-Gate MOS Transistors”,  IEEE International Conference on VLSI Design (VLSI-D), January 2019. (IEEE Xplore) (PPT)  [Nominated for Best Paper Award]

10. Manish Kumar, S. Kumar, Amratansh Gupta, and Arunangshu Ghosh, "Development of Electronic Interface for Sensing Applications with Voltammetric Electronic Tongue", 2018 IEEE SENSORS, October 2018.  (IEEE Xplore) (Description of Work - IEEE Sensors YouTube)