Research papers
Research papers
Photonic physically unclonable functions enabled by photon trapping micro holes in avalanche photodiodes- Teodora Petrovic, Amita Rawat, and M Saif Islam, (under preparation).
FinFET versus NSFET: Performance Predictions and Device Selection at 3nm technology node- Amita Rawat and Udayan Ganguly, IEEE TED, (under review).
Accurate Direction of Arrival Prediction with Asymmetric Surface Structures in Visible-to-Near Infrared Wavelengths- Amita Rawat and M Saif Islam Photonic Sensors, (under review).
AI-Augmented Photon-Trapping Spectrometer-on-a-Chip on Silicon Platform with Extended Near-Infrared Sensitivity- Ahasan Ahamed, Htet Myat, Amita Rawat, Lisa N McPhillips, and M Saif Islama, Advanced Photonics, (under review).
Unique Hyperspectral Response Design in High-Speed Photodetectors Enabled by Periodic Surface Textures- Amita Rawat, Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed S. Mayet, Lisa N. McPhillips, and M. Saif Islam, ACS Photonics, https://doi.org/10.1021/acsphotonics.4c00453.
DC linearity and absorption efficiency enhancement by introducing photon-trapping microstructures into avalanche photodetectors- Lisa N. McPhillips, Amita Rawat, Ahasan Ahamed, M. Saif Islam, Proceedings Volume 12895, Quantum Sensing and Nano Electronics and Photonics XX; 128950G (2024) https://doi.org/10.1117/12.3003649.
Sensitivity Analysis of Si-Avalanche Photodiode for Noise Performance Assessment- Zbynka Kekula, Amita Rawat, and M Saif Islam, 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), https://doi.org/10.1109/NMDC58214.2024.10894206.
Metasurface-enabled circular light propagation for ultra-fast and efficient photodetection- M. Saif Islam, Amita Rawat, Makoto Tsubokawa, Proceedings Volume 13114, Low-Dimensional Materials and Devices 2024; 1311408 (2024) https://doi.org/10.1117/12.3030510.
P-on-N versus N-on-P Silicon-Avalanche Photodiode Selection for Visible and Near Infrared Wavelength Applications- Yiyang Bai, Amita Rawat, Lisa N McPhillips, and M. Saif Islam, 2024 Device Research Conference (DRC), https://doi.org/10.1109/DRC61706.2024.10605335.
On-chip hyperspectral detectors for fluorescence lifetime imaging- Ahasan Ahamed, Amita Rawat, Lisa N. McPhillips, Laura Marcu, M. Saif Islam, Proceedings Volume 12853, High-Speed Biomedical Imaging and Spectroscopy IX; 1285304 (2024) https://doi.org/10.1117/12.3002476.
Direction of arrival sensing enabled by introducing asymmetric surface structures in photodetectors- Amita Rawat and M Saif Islam, SPIE, Photonics West, Optoelectronic materials and devices, 2024, https://doi.org/10.1117/12.3003432.
High-speed PiN photodiode design space exploration to break the speed-efficiency trade-off- Amita Rawat and M Saif Islam, SPIE, Photonics West, Optoelectronic materials and devices, 2024, https://doi.org/10.1117/12.3003413.
Design and Fabrication of High-Efficiency, Low-Power, and Low-Leakage Si-Avalanche Photodiode for Low-Light Sensing, Amita Rawat, Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed S. Mayet, Lisa N. McPhillips, and M. Saif Islam, ACS Photonics, https://doi.org/10.1021/acsphotonics.3c00026.
Single Microhole Per Pixel for Thin Ge-on-Si Complementary Metal-Oxide Semiconductor Image Sensor with Enhanced Sensitivity up to 1700 nm, Ponizovskaya-Devine, Ekaterina, Ahmed S. Mayet, Amita Rawat, Ahasan Ahamed, Shih-Yuan Wang, Aly F. Elrefaie, Toshishige Yamada, and M. Saif Islam, Journal of Nanophotonics 17, no. 1 (2023): 016012, https://doi.org/10.1117/1.JNP.17.016012.
CMOS Image Sensor with Micro-Nano Holes to Improve NIR Optical Efficiency: Micro-Holes on Top Surface vs on Bottom, Ponizovskaya Devine, E., Ahasan Ahamad, Ahmed Mayet, Amita Rawat, Aly F. Elrefaie, Toshishige Yamada, Shih-Yuan Wang, and M. Saif Islam, IEEE Sensors Journal (2023), vol. 23, no. 17, pp. 19256-19261, 1 Sept.1, 2023, doi: 10.1109/JSEN.2023.3298529.
Achieving Higher Photoabsorption than Group III-V Semiconductors in Silicon using Photon-Trapping Surface Structures, Qarony, Wayesh, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, et al. Advanced Photonics Nexus 2, no. 5 (2023): 056001-056001, https://doi.org/10.1117/1.APN.2.5.056001.
Near-Infrared Sensors for High Efficiency and High-Temperature Operation by Ultra-Thin Type-II Quantum Wells and Photon-Trapping Structures, Amita Rawat, Anthony M. K. Chiu, Kwong-Kit Choi, Patrick Oduor, Achyut Dutta, and M. Saif Islam, SPIE, Nanoscience, and Engineering conference, https://doi.org/10.1117/12.2637151.
Wavelength Selective Silicon Avalanche Photodiodes with Controlled Wide Spectral Gain by Integrating Photon-Trapping Microstructures, Amita Rawat, Ahasan Ahamed, Lisa N. Mcphillips, Busra Ergul-Yilmaz, Cesar Bartolo-Perez, Shih-Yuan Wang, and M. Saif Islam, SPIE, Nanoscience, and Engineering conference, https://doi.org/10.1117/12.2637146.
Investigation of Quantum and Dielectric Confinement-based Dopant Deactivation in the Extension Region of FinFET, N Saurabh, S Patil, A Rawat, T Chiarella, B Parvais, U Ganguly, IEEE Electron Device Letters, DOI: 10.1109/LED.2022.3185025.
Engineering the Gain and Bandwidth in Avalanche Photodetectors, Cesar Bartolo-Perez, Ahasan Ahamed, Ahmed S Mayet, Amita Rawat, Lisa McPhillips, Soroush Ghandiparsi, Julien Bec, Gerard Ariño-Estrada, Simon Cherry, Shih-Yuan Wang, Laura Marcu, M Saif Islam, Optics Express, https://doi.org/10.1364/OE.446507.
RF Power Controlled Crystal Phase Transfer: Gd2O3 Phase Transfer from Mono-clinic to Cubic, Amita Rawat, Krista Khiangte Roluahpuia, Rowtu Srinu, Vinod Belwanshi, Apurba Laha, Suddhasatta Mahapatra, and Udayan Ganguly, Thin Solid Films, https://doi.org/10.1016/j.tsf.2021.139047.
Analytical Model-Based Estimation of Line Edge Roughness Induced Vt Variability in Nanowire FETs, Shashank V. Inge, Agam Jain, Amita Rawat, and Udayan Ganguly, Solid-State Electronics, 108422 (2022), https://doi.org/10.1016/j.sse.2022.108422.
An Accurate Process Induced Variability Aware Compact Model based Circuit Performance Estimation for Design-Technology Co-optimization- Shubham Patil, Amita Rawat, Udayan Ganguly, IEEE TED, DOI: 10.1109/TED.2021.3131966.
Experimental Validation of Process Induced Variability Aware SPICE simulation platform- Amita Rawat, N. Sharan, D. Jang, T. Chiarella, F. M. Bufler, F. Catthoor, B. Parvais, and U. Ganguly, IEEE TED, DOI: 10.1109/TED.2021.3053185.
Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Innerspacers and Epi-induced Stress: Understanding & Mitigating Process Risks- Amita Rawat, Krishna K. Bhuwalka, Philippe Matagne, Bjorn Vermeersch, Hao Wu, Geert Hellings, Julien Ryckaert, Changze Liu, IEEE ESSDERC, DOI: 10.1109/ESSCIRC53450.2021.9567879.
Epitaxial Ge-Gd2O3 on Si(111) Substrate by Sputtering for Germanium-on-Insulator Applications- Amita Rawat, Krista Khiangte Roluahpuia, Philipp Gribisch, H.-J. Osten, Apurba Laha, Suddhasatta Mahapatra, and Udayan Ganguly, Thin Solid Films, https://doi.org/10.1016/j.tsf.2021.138732.
Device Scaling Roadmap and its Implications for Logic and Analog platform- Alessio Spessot, Bertrand Parvais, Amita Rawat, Kenichi Miyaguchi, Pieter Weckx, Doyoung Jang, Julien Ryckaert, IEEE IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), DOI: 10.1109/BCICTS48439.2020.9392980.
Nanoscale Transistor Variability Modeling: How simple physics enables powerful prediction platform- Amita Rawat, P. Harsha Vardhan, and Udayan Ganguly, IEEE Nanotechnology Magazine, DOI: 10.1109/MNANO.2020.3024385 (Invited).
An Accurate Structure Generation and Simulation of LER Affected NWFET, A. Jain, SV Inge, A Rawat, U Ganguly, 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, DOI: 10.1109/EDTM47692.2020.9117833.
Threshold Voltage Variability in Nanosheet GAA Transistors- P. Harsha Vardhan, Amita Rawat, and Udayan Ganguly, IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2019.2933061.
Analytical Estimation of LER-Like Variability in GAA Nano-Sheet Transistors- Amita Rawat, Ajinkya Gorad, and Udayan Ganguly, IEEE VLSI-TSA, DOI: 10.1109/VLSI-TSA.2019.8804637.
Epitaxial Gd₂O₃ on Si (111) Substrate by Sputtering to Enable Low-Cost SOI- Amita Rawat, Krista R. Khiangte, Suddhasatta Mahapatra and Udayan Ganguly, IEEE DRC-2019, DOI: 10.1109/DRC.2018.8442170.
The First Compact Model to Determine VT-distribution for DG-FinFET due to LER- Amita Rawat, Sushant Mittal, and Udayan Ganguly, IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2018.2870282.
Analytical Model to Estimate FinFET’s ION, IOFF, SS, and VT Distribution Due to FER- S. Mittal, Amita Rawat, A. S. Shekhawat, S. Ganguly, and U. Ganguly, IEEE Transactions on Electron Devices DOI:10.1109/TED.2017.2709619.
An Analytical Model to Estimate VT Distribution of Partially Correlated Fin Edges in FinFETs Due to Fin-Edge Roughness - Amita Rawat, Sushant Mittal, and Udayan Ganguly, IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2017.2672520.
Amita Rawat, Teodora Petrovic, and M Saif Islam, “Photonic physically unclonable function for true random number generation and biometric ID for hardware security applications” (ROI UC Case No. 2024-583).
Amita Rawat, K. Roluhapuia, S. Mahapatra, A. Laha, U Ganguly “Methodology to Produce Semiconductor on Insulator Substrate” (Application No. PCT/IN2019/050469, granted).
Amita Rawat (imec), Krishna Bhuwalka (HUAWEI), Wu Gao (HUAWEI), Geert Hellings (imec), “Performance Optimized GAA Technology with nFET inner spacer” (Application No. PCT EP 21074400) https://patents.google.com/patent/US20240371874A1/en.