Papers

[4] Y. Jeong, J.H. Park*, S. Im*,Organic Interface Engineering in Transition Metal Dichalcogenide Electronics: Overcoming Contact, Doping, and Stability Challenges, TEEM. 1 1-19.

[3] Fully Bio‐Based Gelatin Organohydrogels via Enzymatic Crosslinking for Sustainable Soft Strain and Temperature Sensing, Adv. Funct. Mater. online.

[2] Y. Jeong§, P. Tordi§, A. Tamayo§, B. Han, M. Bonini*, P. Samori*, Mimicking Synaptic Plasticity: Optoionic MoS2 Memory Powered by Biopolymer Hydrogels as a Dynamic Cations Reservoir, Adv. Funct. Mater. online.

[1] Nonmelting Disordering Facilitated by Electron Delocalization, ACS Nano 19(9) 9317-9326.

[6] P. Tordi§, A. Tamayo§, Y. Jeong§, M. Bonini*, P. Samori*, Multiresponsive Ionic Conductive Alginate/Gelatin Organohydrogels with Tunable Functions, Adv. Funct. Mater. 34(52), 2410663 (2024).

[5] Y. Jeong§, B. Han, A. Tamayo, N. Claes, S. Bals, and P. Samori*, Defect Engineering of MoTe2 via Thiol Treatment for Type Ⅲ van der Waals Heterojunction Phototransistor, ACS Nano 18(28), 18334-18343 (2024).

[4] Y. Jeong§ and P. Samori*, Functionalized 2D transition metal dichalcogenide inks via liquid‐phase exfoliation for practical applications, Bull. Korean. Chem. Soc. 45(2), 110-124 (2024).

[3] Light‐Modulated Humidity Sensing in Spiropyran Functionalized MoS2 Transistors, Small in press (2024).

[2] Boltzmann Switching MoS2 Metal‐semiconductor Field‐effect Transistors Enabled by Monolithic‐oxide‐gapped Metal Gates at the Schottky‐Mott Limit, Adv. Mater. 36(29), 2470233 (2024).

[1] Maximizing Schottky barrier modulation in graphene-WSe2/MoSe2 heterojunction barristor through Dirac-cone induced phenomenon, Carbon 221, 118920 (2024).

[3] Y. Jeong§, T. Kim, H. Cho, J. Ahn, S. Hong, D. K. Hwang, and S. Im*, Negative Photo-Response Switching via Electron-Hole Recombination at The Type III Junction of MoTe2 Channel/SnS2 Top Layer, Adv. Mater. 35(48), 2304599 (2023).

[2] Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics, Nat. Nanotechnol. 18(12) 1439-1447 (2023).

[1] Self-Assembled TaOX/2H-TaS2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga2O3 Transistor, ACS Nano 17 (4), 3666-3675 (2023).

[4] Y. Jeong§, H. J. Lee§, J. Park, S. Lee, H.-J. Jin, S. Park, H. Cho, S. Hong, T. Kim, K. Kim, S. Choi, and S. Im*, Engineering MoSe2/MoS2 Heterojunction Traps in 2D Transistors for Multilevel Memory, Multiscale Display, and Synaptic Functions, NPJ 2D Mater. Appl. 6, 23 (2022).

[3] Ambipolar Nonvolatile Memory Behavior and Reversible Type‐Conversion in MoSe2/MoSe2 Transistors with Modified Stack Interface, Adv. Funct. Mater. 32 (49), 2205567 (2022).

[2] Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices, Small 18 (28), 2200882 (2022).

[1] Performance enhancement of multilayer MoS2 phototransistors via photoresist encapsulation, Curr. Appl. Phys. 41, 14-17 (2022).

[4] Quaternary NAND Logic and Complementary Ternary Inverter with p‐MoTe2/n‐MoS2 Heterostack Channel Transistors, Adv. Funct. Mater. 2108737 (2021).

[3] 2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps, Adv. Electron. Mater. 7 (5), 2100074 (2021).

[2] High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2, Adv. Funct. Mater. 7 (5), 2100074 (2021).

[1] Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two‐Dimensional and Oxide/Two‐Dimensional Transition Metal Dichalcogenide Diodes, Adv. Funct. Mater. 31 (9), 2009436 (2021).

[3] S. Park§, Y. Jeong§, H.-J. Jin, J. Park, H. Jang, S. Lee, W. Huh, H. Cho, H. G. Shin, K. Kim, C.-H. Lee, S. Choi, and S. Im*, Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel, ACS Nano 14(9), 12064-12071 (2020).

[2] Y. Jeong§, H.-J. Jin§, J. H. Park*, Y. Cho, M. Kim, S. Hong, W. Jo, Y. Yi, and S. Im*, Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel, Adv. Funct. Mater. 30(7), 1908210 (2020).

[1] High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface, ACS Nano 14 (11), 15646-15653 (2020).

[5] Y. Jeong§, D. Shin§, J. H. Park§, J. Park, Y. Yi*, and S. Im*, Integrated advantages from perovskite photovoltaic cell and 2D MoTe2 transistor towards self-power energy harvesting and photosensing, Nano Energy 63, 103833 (2019).

[4] Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels, Adv. Electron. Mater. 5 (12), 1900730 (2019).

[3] Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection, Adv. Opt. Mater. 7 (19), 1900768 (2019).

[2] Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors, Nano Lett. 19 (4), 2456-2463 (2019).

[1] Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes, NPJ 2D Mater. Appl. 3 (1), 1-9 (2019).

[3] Y. Jeong§, J. H. Park§, J. Ahn, J. Y. Lim, E. Kim, and S. Im*, 2D MoSe2 Transistor with Polymer-Brush/Channel Interface, Adv. Mater. Interfaces 5(19), 1800812 (2018). 

[2] Van der Waals junction field effect transistors with both n-and p-channel transition metal dichalcogenides, NPJ 2D Mater. Appl. 2 (1), 1-7 (2018).

[1] Fully Transparent p‐MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium‐Tin‐Oxide Source/Drain, Adv. Funct. Mater. 28 (39), 1801204 (2018).