Journal

[54] Do Gyun An, Garam Kim, Hyunwoo Kim, Sangwan Kim, and Jang Hyun Kim, "Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation," Semiconductor Science and Technology, Vol. 39. p. 015006, Dec. 2023 [SCIE]

[53] Min-Ki Ko, Jang Hyun Kim, and Garam Kim, "Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations," Journal of Semiconductor Technology and Science, Vol. 23, pp. 228-235, Aug. 2023 [SCIE]

[52] Chaewon Yun, Sangwan Kim, Seongjae Cho, Il Hwan Cho, Hyunwoo Kim, Jang Hyun Kim, and Garam Kim, "Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction," Journal of Semiconductor Technology and Science, Vol. 23, pp. 207-214, Aug. 2023 [SCIE]

[51] Si-Won Lee, Seongjae Cho, Il Hwan Cho, and Garam Kim, "1T DRAM with Raised SiGe Quantum Well for Sensing Margin Improvement," Journal of Semiconductor Technology and Science, Vol. 23, pp. 64-70, Feb. 2023 [SCIE]

[50] Young Suh Song, Sangwan Kim, Jang Hyun Kim, Garam Kim, Jong-Ho Lee, and Woo Young Choi, "Enhancement of Thermal Characteristics and

On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-k Spacer Structure," IEEE Transactions on Electron Devices, Vol. 70, pp. 343-348, Jan. 2023 [SCIE]

[49] Ki Yeong Kim, Young Suh Song, Garam Kim, Sangwan Kim, and Jang Hyun Kim, "Reliable High-Voltage Drain-Extended FinFET With Thermoelectric Improvement," IEEE Transactions on Electron Devices, Vol. 69, pp. 5985-5990, Nov. 2022 [SCIE]

[48] Seungwon Go, Shinhee Kim, Dong Keun Lee, Jae Yeon Park, Sora Park, Dae Hwan Kim, Garam Kim and Sangwan Kim, "Design optimization of heterojunction 1T DRAM cell with SiGe body/drain for high performance," Semiconductor Science and Technology, Vol. 37, p.125010, Nov. 2022 [SCIE] 

[47] Young Suh Song, Ki Yeong Kim, Tae Young Yoon, Seok Jung Kang, Garam Kim, Sangwan Kim, and Jang Hyun Kim, "Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design," Solid-State Electronics, Vol. 197, p. 108436 , Nov. 2022 [SCIE]

[46] Kang Lee, Sangwan Kim, Garam Kim, and Jang Hyun Kim, "Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor," Journal of Semiconductor Technology and Science, Vol. 22, pp. 266-274, Aug. 2022 [SCIE]

[45] Garam Kim, Jang Hyun Kim, and Sangwan Kin, "Multi-colour GaN-based LEDs with trench structure," Japanese Journal of Applied Physics, Vol. 61, pp. 050904-1-050904-3, May 2022 [SCIE]

[44] Min Gyu Jeon, Kang Lee, Sangwan Kim, Garam Kim, and Jang Hyun Kim, "Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier," Journal of Semiconductor Technology and Science, Vol. 22, pp. 61-68, April 2022 [SCIE]

[43] Inyoung Lee, Hyojin Park, Quan The Nguyen, Garam Kim, Seongjae Cho and Il Hwan Cho, "Optimization of Feedback FET with Asymmetric Source Drain Doping Profile," Micromachines, Vol. 13, p. 508, Mar. 2022 [SCIE]

[42] Quan The Nguyen, Deokjin Jang, Md. Hasan Raza Ansari, Garam Kim, Seongjae Cho and Il Hwan Cho, "Reliability improvement of 1T DRAM based on feedback transistor by using local partial insulators," Japanese Journal of Applied Physics, Vol. 60, pp.  104002-1-104002-1, Oct. 2021 [SCIE]

[41] Young Suh Song, Sangwan Kim, Garam Kim, Hyunwoo Kim, Jong-Ho Lee, Jang Hyun Kim, and Byung-Gook Park, "Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design,"Japanese Journal of Applied Physics, Vol. 60, pp.  SCCE04-1-SCCE04-9, Mar. 2021 [SCIE]

[40] Young Suh Song, Jang Hyun Kim, Garam Kim, Hyun-Min Kim, Sangwan Kim, Byung-Gook Park, "Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs," IEEE Journal of the Electron Devices Society, Vol. 9, pp. 36-41, Nov. 2020 [SCIE]

[39] Jang Hyum Kim, Tae Chan Kim, Garam Kim, Hyum Woo Kim, and Sangwan Kim, "Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors," IEEE Journal of the Electron Devices Society, Vol. 8, pp. 1345-1349, Oct. 2020 [SCIE]

[38] Garam Kim, Jang Hyun Kim, and Sangwan Kim, "Optimization of spacer and source/channel junction to improve TFET characteristics," IEICE Electronics Express, Vol. 17, No. 17, p. 20200211, Sep. 2020 [SCIE]

[37] Jang Hyum Kim, Hyun Woo Kim, Young Suh Song, Sangwan Kim, and Garam Kim, "Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor," Micromachines, Vol. 11, No. 8, p. 780, Aug. 2020 [SCIE]

[36] Garam Kim, Jang Hyun Kim, Jaemin Kim, and Sangwan Kim, "Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure," Applied Sciences, Vol. 10, No. 15, p. 5378, Aug. 2020 [SCIE]

[35] Seok Jung Kang, Jeong-Uk Park, Kyung Jin Rim, Yoon Kim, Jang Hyun Kim, Garam Kim, and Sangwan Kim, “Analysis of channel area fluctuation effects of gate-all-around tunnel field-effect transistor,” Journal of Nanoscience and Nanotechnology, Vol. 20, No. 7, pp. 4409-4413, Jul. 2020 [SCIE] 

[34] Ye Sung Kwon, Seong-Hyun Lee, Yoon Kim, Garam Kim, Jang Hyun Kim, and Sangwan Kim, “Surrounding channel nanowire tunnel field-effect transistor with dual gate to reduce a hump phenomenon,” Journal of Nanoscience and Nanotechnology, Vol. 20, No. 7, pp. 4182-4187, Jul. 2020 [SCIE] 

[33] Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim, and Sangwan Kim, "Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)," Applied Sciences, Vol. 10, No. 10, p. 3596, May 2020 [SCIE]

[32] Jaehong Lee, Garam Kim, and Sangwan Kim, "Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor," Electronics, Vol, 8, no. 12, p.1415, Nov. 2019 [SCIE] 

[31] Seunghyun Yun, Jeongmin Oh, Seokjung Kang, Yoon Kim, Jang Hyun Kim, Garam Kim, and Sangwan Kim, “F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application,” Micromachines, Vol. 10, no. 11, p.760, Nov. 2019 [SCIE] 

[30] Garam Kim, Jaehong Lee, Jang Hyun Kim, and Sangwan Kim, “High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling,” Micromachines, Vol. 10, no. 2, p. 77, Jan. 2019 [SCIE]

[29] Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim, and Byung-Gook Park, "Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain," Micromachines, Vol. 10, no. 1, p. 30, Jan. 2019 [SCIE]

[28] Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, and Byung-Gook Park, "InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation," Optics Express, Vol. 25, No. 6, pp. 6440-6449, Mar. 2017 [SCI]

[27] Garam Kim, Min-Chul Sun, Jang Hyun Kim, Euyhwan Park, and Byung-Gook Park, "GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency," Applied Physics Letters, Vol. 110, No. 2, pp. 021115-1-4, Jan. 2017 [SCI]

[26] Jang Hyun Kim, Garam Kim, Euyhwan Park, Dong Hoon Kang, and Byung-Gook Park, "Effects of current spreading in GaN-based light-emitting diode using ITO spreading pad," Journal of Semiconductor Technology and Science, Vol. 15, No. 1, pp. 114-121, Feb. 2015 [SCIE]

[25] Garam Kim, Jang Hyun Kim, Euyhwan Park, and Byung-Gook Park, "Reduction of curent crowding in InGaN-based blue light-emitting diodes by modifying metal contact geometry," Journal of Semiconductor Technology and Science, Vol. 14, No. 5, pp. 588-593, Oct. 2014 [SCIE]

[24] Hyun Woo Kim, Jong Pil Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Jang Hyun Kim, Euyhwan Park, Hyungjin Kim, and Byung-Gook Park, "Schottky barrier tunnel field-efect transistor using spacer technique," Journal of Semiconductor Technology and Science, Vol. 14, No. 5, pp. 572-578, Oct. 2014 [SCIE]

[23] Garam Kim, Sang Wan Kim, Jang Hyun Kim, Euyhwan Park, and Byung-Gook Park, "Effects of periodic trench structure on the cathodo-luminescence in InGaN/GaN multi-quantum-wells," Electronics Letters, Vol. 50, No. 14, pp. 1012-1014, Jul. 2014 [SCI]

[22] Garam Kim, Euyhwan Park, Jang Hyun Kim, Jong-Ho Bae, Dong hoon Kang, and Byung-Gook Park, "Analysis of trap and its impact on InGaN-based blue light-emitting diodes using current-transient methodology," Japanese Journal of Applied Physics: Regular Papers, Vol. 53, No. 6, pp. 062101-1-062101-5, May 2014 [SCI]

[21] Garam Kim, Jang Hyun Kim, Euyhwan Park, Donghoon-Kang, and Byung-Gook Park, "Improved internal quantum efficiency of GaN-based light emitting diodes using p-AlGaN trench in multi-quantum well," Japanese Journal of Applied Physics: Regular Papers, Vol. 53, No. 6S, pp. 06JE14-1-06JE14-4, May 2014 [SCI]

[20] Min-Chul Sun, Hyun Woo Kim, Hyungjin Kim, Sang Wan Kim, Garam Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "VT-Modulation of planar tunnel field-effect transistors with ground-plane under ultrathin body and bottom oxide," Journal of Semiconductor Technology and Science, Vol. 14, No. 2, pp. 139-145, Apr. 2014 [SCIE]

[19] Garam Kim, Jang Hyun Kim, Euyhwan Park, Donghoon Kang, and Byung-Gook Park, "Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region," Optics Express, Vol. 22, No. 2, pp. 1235-1242, Jan. 2014 [SCI]

[18] Min-Chul Sun, Garam Kim, Jung Han Lee, Hyungjin Kim, Sang Wan Kim, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology," Microelectronic Engineering, Vol. 110, pp. 141-146, Oct. 2013 [SCI]

[17] Jang Hyun Kim, Garam Kim, Euyhwan Park, and Byung-Gook Park, "Analysis of the internal quantum efficiency of gallium-nitride-based light-emitting diodes from the transient electro-luminescence characteristics," Journal of the Korean Physical Society, Vol. 63, No. 3, pp. 1186-1188, Sep. 2013 [SCI]

[16] Euyhwan Park, Garam Kim, Wandong Kim, Jang Hyun Kim, Donghoon Kang, Joong-Kon Son, and Byung-Gook Park, "Enhancement of radiative recombination by different indium composition of multiple quantum barriers in GaN-based light-emitting diodes," Japanese Journal of Applied Physics: Regular Papers, Vol. 52, No. 6S, pp. 06GE04-1-06GE04-5, Jun. 2013 [SCI]

[15] Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Novel tunneling field-effect transistor with sigma-shape embedded SiGe sources and recessed channel," IEICE Transactions on Electronics, Vol. E96-C, No. 5, pp. 639-643, May 2013 [SCIE]

[14] Hyun Woo Kim, Jang Hyun Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Euyhwan Park, Hyungjin Kim, Kyung Wan Kim, and Byung-Gook Park, "A novel fabrication method for the nanoscale tunneling field effect transistor," Journal of Nanoscience and Nanotechnology, Vol. 12, No. 5, pp. 5592-5597, Jul. 2012 [SCI]

[13] Min-Chul Sun, Garam Kim, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Co-Integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology," Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, pp. 5313-5317, Jul. 2012 [SCI]

[12] Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, and Byung-Gook Park, "Comparative study on top- and bottom-source vertical-channel tunnel field-effect transistors," IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 826-830, May 2012 [SCIE]

[11] Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, and Byung-Gook Park, "Study on threshold voltage control of tunnel field-effect transistors using VT-control doping region," IEICE Transactions on Electronics, Vol. E95-C, No. 5, pp. 820-825, May 2012 [SCIE]

[10] Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits," Japanese Journal of Applied Physics: Regular Papers, Vol. 51, No. 4, pp. 04DC03-1-04DC03-5, Apr. 2012 [SCI]

[9] Seongjae Cho, Min-Chul Sun, Garam Kim, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology," Journal of Semiconductor Technology and Science, Vol. 11, No. 3, pp. 182-189, Sep. 2011 [SCIE]

[8] Garam Kim, Sang Wan Kim, Kyung-Chang Ryoo, Jeong-Hoon Oh, Min-Chul Sun, Hyun Woo Kim, Dae Woong Kwon, Jisoo Chang, Sunghun Jung, and Byung-Gook Park, "Split-Gate-Structure 1T DRAM for Retention Characteristic Improvement," Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, pp. 5603-5607, Jul. 2011 [SCI]

[7] Taewook Kang, Jungjin Park, Jung-Kyu Lee, Garam Kim, Daeyoung Woo, Joong Kon Son, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin, "Random telegraph noise in GaN-based light-emitting diodes," Electronics Letters, Vol. 47, No. 15, pp. 1-2, Jul. 2011 [SCI]

[6] Joung-Eob Lee, Garam Kim, Kyung Wan Kim, Jung-Han Lee, Kwon-Chil Kang, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors," Japanese Journal of Applied Physics: Regular Papers, Vol. 50, No. 7, pp. 074101-1-074101-5, Jul. 2011 [SCI]

[5] Jang-Gn Yun, Garam Kim, Joung-Eob Lee, Yoon Kim, Won Bo Shim, Jong-Ho Lee, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "Single-Crystalline Si STacked ARray (STAR) NAND flash memory," IEEE Transactions on Electron Devices, Vol. 58, No. 4, pp. 1006-1014, Apr. 2011 [SCI]

[4] Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Min-Chul Sun, Garam Kim, Hyun Woo Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, and Byung-Gook Park, "Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor," Applied Physics Letters, Vol. 97, No. 19, pp. 1935041-1935043, Nov. 2010 [SCI]

[3] Joung-Eob Lee, Garam Kim, Jang-Gn Yun, Kwon-Chil Kang, Jung Han Lee, Dae-Hwan Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 11, pp. 1152011-1152015, Nov. 2010 [SCI]

[2] Joung-Eob Lee, Garam Kim, Kyung Wan Kim, Won Bo Shim, Jung Han Lee, Kwon-Chil Kang, Jang-Gn Yun, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Pocess Using the Recessed Channel Structure," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 11, pp. 1152021-1152026, Nov. 2010 [SCI]

[1] Jae Young Song, Jong Pil Kim, Sang Wan Kim, Jeong-Hoon Oh, Kyung-Chang Ryoo, Min-Chul Sun, Garam Kim, Jang-Gn Yun, Hyungcheol Shin, and Byung-Gook Park, "Fin and recess-channel metal oxide semiconductor field effect transistor for sub-50nm dynamic random access memory cell," Japanese Journal of Applied Physics: Regular Papers, Vol. 49, No. 10, pp. 1042021-1042025, Oct. 2010 [SCI]