Soonchunhyang University (2022.09-Current) as a Principal Investigator

[32] Hyosik Jo, Yunseok Kim, Seulwon Choi, Ilhan Yoo, Minji Han, Jung-El Ryu, and Hwanyeol Park*(corr.), “Advances in Area-Selective Atomic Layer Deposition: Surface Chemistry, Challenges, and Future Perspectives”, Submitted 

[31] Yunseok Kim, Seulwon Choi and Ho Jun Kim and Hwanyeol Park*(corr.), “Elucidating the super-cycle mechanism in atomic layer growth of HfAlOx ternary metal oxide from an ab-initio study”, Submitted 

[30] Woosub Byun, Tae-Hyun Kil, BongHo Kim, Yunseok Kim, Hwanyeol Park*(corr.), Jun-Young Park*, Dae-Myeong Geum*, “Simultaneous Deuteration of Metal and Oxide Channels for Enhanced Contact Properties and Switching Characteristics in InGaZnO Thin-Film Transistors”, Submitted 

[29] Ho Jun Kim, Yunseok Kim, Hwanyeol Park*(corr.), “Insights into Tri-silane Induced Surface Reactions on Silicon: A First-Principles Study”, Surfaces and Interfaces, Under review

[28] Yunseok Kim, Seulwon Choi, Huichan Kang, Ho Jun Kim, Hwanyeol Park*(corr.), “Multiscale Computational Fluid Dynamics Modeling of Spatial Atomic Layer Deposition Processes: Application to Chamber Design and Process Control”, Engineering Applications of Computational Fluid Mechanics, Under review

[27] Seulwon Choi, Yunseok Kim, Hyosik Jo,  Huichan Kang, Dae-Myeong Geum, Hwanyeol Park*(corr.), “Tailoring Surface Chemistry for Area-Selective HfO2 Films: Experimental and DFT Insights”, Surfaces and Interfaces 73, 107552 (2025)

[26] Hwanyeol Park, Dae-Myeong Geum, Ho Jun Kim, “Accelerating hydrogen evolution catalyst discovery via data-driven strategy for high-performance single- atom catalysts embedded in h-BN”, Journal of Energy Chemistry 107, 750-758 (2025)

[25] Hwanyeol Park and Ho Jun Kim, “Multi-Scale Computational Insights into SinH2n+1 Adsorption in SiH4/H2/Ar Plasma Environments”, Surfaces and Interfaces 67, 106574 (2025)

[24] Hwanyeol Park and Ho Jun Kim, “Adsorption of silane radicals governing plasma silicon deposition with dilution gases”, Physics of Fluids 37, 4 (2025)

[23] Woojin Choi, Sungwoo Lee, Dong-Hoon Han, HongTaek Lim, Hwanyeol Park*(corr.), Gun-Do Lee, “First-Principles computation-driven mechanism study of tungsten growth on alumina surfaces with TiN nano-islands”, Applied Surface Science 674, 160938 (2024)

[22] Hwanyeol Park*, Yunseok Kim, Seulwon Choi, Ho Jun Kim, “Data Driven Computational Design of Stable Oxygen Evolution Catalysts by DFT and Machine Learning : Promising Electrocatalysts”, Journal of Energy Chemistry 91, 645-655 (2024)

[21] Ho Jun Kim, Kyungjun Lee, and Hwanyeol Park*(corr.), “Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors”, Plasma Sources Science and Technology 33(1), 015008 (2024)

[20] Ho Jun Kim, Kyungjun Lee, and Hwanyeol Park*(corr.), “Effect of dilution gas on the distribution characteristics of capacitively coupled plasma by comparing SiH4/He and SiH4/Ar”, Plasma Sources Science and Technology 32(11), 115008 (2023)

[19] Yichao Wang, Xianguang Miao, Yitong Li, Hwanyeol Park, Yang Lu, Xin Li “Ion-exchange Enabled New Intercalation Li Metal Fluorides”, Electrochemistry Communications 155, 107581 (2023)

[18] Hwanyeol Park*, Dong-Hoon Han, HongTaek Lim, Woojin Choi, Ho Jun Kim, “First-Principles Investigation of Morphological Evolution of Tungsten Growth on Alumina Surfaces: Implications for Thin-Film Growth”, ACS Applied Nano Materials 5, 11, 16365 (2022)

Harvard University (2021.09-2022.08) as a Postdoc Fellow

[17] Hwanyeol Park*, Ho Jun Kim, “Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma”, Coatings 11(9), 1041 (2021)

[16] Woojin Choi, Sungwoo Lee, Dong-Hoon Han, HongTaek Lim, Hwanyeol Park*(corr.), Gun-Do Lee, “Reaction mechanisms of chlorine reduction on hydroxylated alumina in titanium nitride growth: first principles study”, Applied Surface Science 550, 149391 (2021)

Samsung Electronics (2019.03-2021.07) as a Senior Researcher

[15] Jeong-Min Lee, Jinseon Lee, Ji Won Han, Hwanyeol Park, SeJin Kyung, Il Woo Kim, Jong Myeong Lee, Tae Joo Park and Woo-Hee Kim, “Enhanced Selectivity of Atomic Layer Deposited Ru Thin Films through the Discrete Feeding of Aminosilane Inhibitor Molecules”, Applied Surface Science 539, 148247 (2021)

[14] Hwanyeol Park*, Dong-Hoon Han, Hong Taek Lim, Euijoon Yoon and Gun-Do Lee, “Thermodynamic insights into interfacial interactions in TiN/amorphous Al2O3 heterostructures: ab initio molecular dynamics and first principles investigation”, Inorganic Chemistry Frontiers 7, 4347-4356 (2020) [Inside Front Cover]

[13] Gun-Do Lee, Alex W. Robertson, Sungwoo Lee, Yung-Chang Lin, Jeong-Wook Oh, Hwanyeol Park, Young-Chang Joo, Euijoon Yoon, Kazu Suenaga, Jamie H. Warner, Christopher P. Ewels, “Direct observation and catalytic role of mediator atom in 2D materials”, Science Advances 6(24), eaba4942 (2020)

[12] Hwanyeol Park*, Daekwang Woo, Jong Myeong Lee, Se Jun Park, Sungwoo Lee, Ho Jun Kim, Euijoon Yoon and Gun-Do Lee, “The influence of hydrogen concentration in amorphous carbon films on mechanical properties and fluorine penetration: a density functional theory and ab initio molecular dynamics study”, RSC Advances 20(12), 6822-6830 (2020)

[11] Hwanyeol Park*, Daekwang Woo, Jong Myeong Lee, Se Jun Park, Sungwoo Lee, Ho Jun Kim, Euijoon Yoon and Gun-Do Lee, “First principles investigation on energetics, structure, and mechanical properties of amorphous carbon films doped with B, N, and Cl”, Scientific Reports 9(1), 18961 (2019)

[10] So-Yeon Lee, Kyung-Tae Jang, Min-Woo Jeong, Sungtae Kim, Hwanyeol Park, Kuntae Kim, Gun-Do Lee, Miyoung Kim, Young-Chang Joo, “Bonding structure and etching characteristics of amorphous carbon for a hardmask deposited by DC sputtering”, Carbon 154, 227-284 (2019)

[9] Hwanyeol Park*, Euijoon Yoon, Gun-Do Lee, and Ho Jun Kim, “Analysis of surface adsorption kinetics of SiH4 and Si2H6 for deposition of a hydrogenated silicon thin film using intermediate pressure SiH4 plasmas”, Applied Surface Science 496, 143728 (2019)

[8] Hwanyeol Park*, Sungwoo Lee, Ho Jun Kim, Daekwang Woo, Se Jun Park, Jong Myeong Lee, Euijoon Yoon and Gun-Do Lee, “Effects of nitrogen doping in amorphous carbon layers on the diffusion of fluorine atoms: A first-principles study”, Journal of Applied Physics 125(15), 155701 (2019)

[7] Ji-Yong Kim, Hwanyeol Park, Wonhyo Joo, Dae-Hyun Nam, Sungwoo Lee, Hyoung Gyun Kim, In-Kyoung Ahn, Ho-Young Kang, Gi-Baek Lee, In-ho Jung, Mi-Young Kim, Gun-Do Lee and Young-Chang Joo, “Predictive Fabrication of Ni Phosphide Embedded in Carbon Nanofibers as Active and Stable Electrocatalysts”, Journal of Materials Chemistry A 7(2), 7451 (2019)

Seoul National University (2014.03-2019.02) with Prof. Euijoon Yoon and Prof. Gun-Do Lee

[6] Hwanyeol Park*, Sungwoo Lee, Ho Jun Kim, Daekwang Woo, Jong Myeong Lee, Euijoon Yoon and Gun-Do Lee, “Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: First-principles study”, RSC Advances 8(68), 39039-39046 (2018)

[5] Jeonghwan Jang‡, Seung-Yong Lee‡, Hwanyeol Park, Sangmoon Yoon, Gyeong-Su Park, Gun-Do Lee, Yongjo Park, Miyoung Kim and Euijoon Yoon, “Solid-Phase Epitaxial Growth of an Alumina Layer Having a Stacking-Mismatched Domain Structure of the Intermediate γ-Phase”, ACS Applied Materials & Interfaces 10(48), 41487-41496 (2018)

[4] Hwanyeol Park*, Sungwoo Lee, Ho Jun Kim, Daekwang Woo, Se Jun Park, Kangsoo Kim, Euijoon Yoon and Gun-Do Lee, “Effects of H2 and N2 treatment for B2H6 dosing process on TiN surfaces during atomic layer deposition: an ab initio study”, RSC Advances 8(38), 21164-21173 (2018)

[3] Dae-Myeong Geum, SangHyeon Kim, SooSeok Kang, Hosung Kim, Hwanyeol Park, Pyo Rho, Seung Yeop Ahn, Jindong Song, Won Jun Choi, and Euijoon Yoon, “Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates”, Optics Express 26(5), 6249 (2018)

[2] Hwanyeol Park*, Sungwoo Lee, Ho Jun Kim, Euijoon Yoon and Gun-Do Lee, “Dissociation reaction of B2H6 on TiN surfaces during atomic layer”, RSC Advances 7(88), 55750-55755 (2017)

[1] Sehun Park, Daehan Choi, Hwanyeol Park, Daeyoung Moon, Duk Kyu Bae, Euijoon Yoon, and Yongjo Park, “Suppression of surface leakage current in InSb photodiode by ZnS passivation”, International Journal of Nanotechnology 13(4/5/6), 392 (2016)

[7] Hwanyeol Park, Sejun Park, Junhyoung Cho , SeJin Kyung, Deawee Kong, Tae-Min Kim, “Semiconductor device and method of manufacturing the same”, US Patent US20230081402A1 (2023)

[6] Hwanyeol Park, Kyungnam Kang, Jeonghoon Nam, SeJin Kyung, Deawee Kong, Tae-Min Kim, “Substrate holding unit and substrate processing apparatus”, US Patent US20230074307A1 (2023)

[5] Hwanyeol Park, Kyungnam Kang, Jeonghoon Nam, SeJin Kyung, Deawee Kong, Tae-Min Kim, “Apparatus for manufacturing a semiconductor device and method of manufacturing the apparatus”, US Patent US20230020305A1 (2023)

[4] Hwanyeol Park, Jongyoung Park, Youngdeock Lee, Deawee Kong, SeJin Kyung, Il Woo Kim, Song Yi Baek, Philippe Coche, “Semiconductor device including hard mask structure”, US Patent US20220344166A1 (2022)

[3] Hwanyeol Park, Minwoo Lee, YoungHo Jeung, SeJin Kyung, Il Woo Kim, “Methods of manufacturing a semiconductor device”, US Patent US20220344367A1 (2022)

[2] Jeeyong Kim, Jung-Hwan Lee, Hwanyeol Park, “Integrated Circuit Device and Electronic System having the same”, US Patent US20220262819A1 (2022)

[1] Hwanyeol Park, Jongkyu Lee, Hwan Woo Kim, Chulhwan Choi, “Semiconductor structure having composite mold layer ”, US Patent US20220223604A1 (2022)

[17] 박환열, 최슬원, 김윤석, 강희찬, “원자층 증착 장치”, 10-2024-0145550. (출원)

[16] 박환열, 최슬원, 김윤석, “반도체 장치의 제조용 장비 및 반도체 장치의 제조 방법”, KR 10-2024-0011285. (출원)

[15] 박환열, 강경남, 남정훈, 경세진, 공대위, 김태민, “반도체 장치의 제조용 장비 및 반도체 장치의 제조 방법”, KR 10-2021-0094041. (출원)

[14] 박환열, 최철환, 경세진, 김일우, 김진혁, 정대성, 조성우, “로드락 챔버의 관리 방법”, KR 10-2020-0099185. (출원)

[13] 박환열, 박세준, 조준형, 경세진, 공대위, 김태민, “반도체 소자 및 그 제조 방법”, KR 10-2021-0122772. (출원)

[12] 박환열, 강경남, 남정훈, 경세진, 공대위, 김태민, “기판 지지 유닛 및 기판 처리 장치”, KR 10-2021-0119640. (출원)

[11] 김지용, 이정환, 박환열, “집적회로 소자 및 이를 포함하는 전자 시스템”, KR 10-2021-0021137. (출원)

[10] 박환열, 박종영, 이용덕, 경세진, 공대위 김일우, 백송이, 필립코쉐, “하드 마스크 구조체를 포함하는 반도체 소자”, KR 10-2021-0053266. (출원)

[9] 박환열, 김환우, 이종규, 최철환, “복합 몰드층을 포함하는 반도체 구조물”, KR 10-2021-0003566. (출원)

[8] 박환열, 경세진, 김일우, 이민우, 정영호, “반도체 장치의 제조 방법”, KR 10-2021-0052923. (출원)

[7] 정호경, 최철환, 박환열, 송지윤, “리프트 어셈블리 및 그를 포함하는 반도체 소자의 제조 장치”, KR 10-2021-0091801. (출원)

[6] 백송이, 박환열, 경세진, 공대위, 김태민, 노영주, “반도체 공정용 화학물질 처리 방법 및 이를 수행하기 위한 스크러버”, KR 10-2021-0059790. (출원)

[5] 박환열, 경세진, 김선철, 김일우, 배종용, 한동훈, “박막 형성 방법”, KR 10-2021-0052305. (출원)

[4] 코셰필립, 백송이, 우대광, 경세진, 공대위, 김일우, 박환열, “플라즈마 처리 장치”, KR 10-2020-0127057. (출원)

[3] 박환열, 김우희, 박태주, 경세진, 김일우, 이정민, 이정빈, “영역 선택적 원자층 증착 방법”, KR 10-2021-0013416. (출원)

[2] 박환열, 김승덕, 경세진, 공대위, 김일우, 조상우, “파티클 제거 가스를 공급하는 잔류 가스 처리 시스템 및 방법”, KR 10-2020-0151867. (출원)

[1] 백송이, 박환열, 경세진, 공대위, 김일우, 이재찬, “오염 물질 제거 장치”, KR 10-2020-0127057. (출원)

[2] 박환열, “고급반도체공학”, 152쪽. 2025.6.30. (ISBN: 979-11-87030-50-8)

[1] 박환열, “반도체 및 디스플레이 공정 개론”, 202쪽, 2024.7.1. (ISBN: 979-11-87030-41-6)