Welcome to the Laboratory for Advanced Nanoelectronic Devices at SRM Research Institute of Science and Technology. We focus on the Physics of new electronic device structures and concepts. We study a wide range of electronic materials at the nanoscale to understand the importance of confinement. Exotic schemes of manoeuvring, processing, and engineering of materials at low dimensions are explored for new functionalities and applications. The interdisciplinary nature of research covers experimental Semiconductor Physics, Materials Science, Electronics and Electrical Engineering. All these activities are aimed towards new-generation manufacturing technologies for large-area nano-electronics for 2D and 3D device integration.

*** Research News ***

• New publication: Selective operation of enhancement and depletion modes of nanoscale field-effect transistors, is accepted in ACS Applied Electronic Materials. March 2024. This article is published on invitation from the Editors of the journal for Early Career Forum 2024. News: Phys.org, Nanowek

• New publication: Homojunction Interface Boosts Hole-Carrier Injection in p-Type CuI Nanoribbon Field-Effect Transistors, is accepted in ACS Applied Electronic Materials. January 2024.

• New publication: ALD-Grown Two-Dimensional TiSx Metal Contacts for MoS2 Field-Effect Transistors, is accepted in Nanoscale Advances. July 2023. News: Phys.org, TechCodex, Life Technology.

• Dr. Sagade is conferred with SERB International Research Experience (SIRE) Award by SERB, Bharat. June 2023.

• Dr. Sagade is awarded the prestigious Friedrich Wilhelm Bessel Research Award from the Alexander von Humboldt Foundation, Germany, for research excellence in Experimental Condensed Matter Physics. May 2023.

• New publication: On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance, is accepted in ACS Applied Electronic Materials, the journal from American Chemical Society (ACS). June 2021.

• Dr. Sagade received Visiting Scientist Fellowship from Indian National Science Academy (INSA) to visit Indian Institute of Science, Bengaluru. June 2021.

• New research funding: Highly competitive SERB Core Research Grant research funding is sanctioned to PI Dr. Kiran Mangalampalli (Assist. Prof., Department of Physics and Nanotechnology) and Co-PI Dr. Sagade. December 2020.

• New publication: 100 GHz ZnO Schottky diodes processed from solution on wafer-scale, is accepted in Nature Electronics, the journal from Springer Nature. August 2020. News: TechXplore, Nature Middle East.

• New research funding: A research project funding from Royal Society UK under International Exchange Scheme is awarded. July 2020.

• New publication: Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine, is accepted in Beilstein Journal of Nanotechnology; the journal from Beilstein Institute for the Advancement of Chemical Sciences (Germany). April 2020.

• The research work published on phase engineered Si is highlighted in scientific news: Enhanced light absorption in silicon by phase engineering

• New publication: On the indentation-assisted phase engineered Si for solar applications, is accepted in Scripta Materialia; the journal from Elsevier. March 2020.

• The research work published in 2017 on graphene based OLED encapsulation has been now identified as an important topic on nanotechnology in a new book titled "Nanoengineering: The Skills and Tools Making Technology Invisible". February 2020.

• New publication: Carbon nanotube-graphene nanoribbon seamless junction transistor, is accepted in Nanoscale Advances; the journal from Royal Society of Chemistry (RSC). January 2020.

• Dr. Sagade received Visiting Scientist grant from "Netherlands Organisation for Scientific Research" (NWO) to visit Eindhoven University of Technology, The Netherlands. July 2019.

• Dr. Sagade is awarded SRM IST Gold Medal in Physics at annual Research Day. February 2019.