2025

• D.-R. Chen*, J. Muthu, J.-T. Chang, P.-H. Lin, Y.-X. Chen, F. Khurshid, H.-T. Chin, J. Kong, M. Hofmann, Y.-P. Hsieh*, Breaking electrochemical scaling laws in atomically engineered van der Waals stack multisite edge catalysts, Nano Lett. 25, 12059-12066 (2025) – IF: 11.2

• X. Zheng, J. Wang, J. Jiang, T. Zhang, J. Zhu, T. Dang, P. Wu, A.-Y. Lu, D.-R. Chen, T. Yang, X. Zhang, K. Zhang, K. Y. Ma, Z. Wang, A. Yao, Y.-P. Hsieh, V. Bulovic, T. Palacios, Y. Wan, H. Liu, J. Kong*, Electrostatic repulsion-based transfer of 2D van der Waals materials, Nature. (accepted, 2025) – IF: 64.8

• J.-T. Chang, Y.-X. Chen, H.-T. Chin, D.-R. Chen, J.-J. Lee, C.-Y. Wu, Y.-C. Chou, M. Hofmann, Y.-P. Hsieh*, 2D atomic templating for the large-scale synthesis of metastable CuInS₂ and its heterojunctions, ACS Appl. Mater. Interfaces. 17, 31 (2025) – IF: 10.383

• Y.-X. Chen, J.-J. Lee, D.-R. Chen, Y.-C. Lin, H.-T. Chin, X.-Y. Huang, S.-K. Chiu, C.-C. Ting, M. Hofmann, and Y.-P. Hsieh*, Electron Cloaking in MoS₂ for High-Performance Optoelectronics, Nano Lett., (2025) – IF: 11.2

• Y.-S. Chen, K.-W. Hsiao, H.-T. Chin, D.-R. Chen, Z.-L.Yen, Y.-W. Lan, C.-T. Ting, M. Hofmann, C.-T. Chiang, Y.-H. Chan, J. Vejpravová, Y.-P. Hsieh*, Pt@ WS2-an Extrinsic 2D Dilute Ferromagnetic Semiconductor Beyond Room Temperature, Small, 9, 3, 2400955. (2025)  – IF: 15

• J.-T. Chang, Y.-X. Chen, H.-T. Chin, D.-R. Chen, J.-J. Lee, C.-Y. Wu, Y.-C. Chou, M. Hofmann, and Y.-P. Hsieh*, 2D Atomic Templating for the Large-Scale Synthesis of Metastable CuInS₂ and Its Heterojunctions, ACS Appl. Mater. Interfaces,. (2025) – IF: 10.383

• D.-R. Chen, T. Zhang, S.-M. He, C. Cheng, Y.-P. Hsieh, J. Wang, J. Kong*. Fabrication of Å-Scale Graphene Pores for Efficient Isomer and Ionic Separation. Microsystems Annual Research Conference (MARC 2025), USA, 2025

2024

•  H. Wang∇, D.-R. Chen ∇, Y.-C Lin, P.-H. Chen, J.-T. Chang, J. Muthu, M. Hofmann, Y.-P. Hsieh*, Enhancing the Electrochemical Activity of 2D Materials Edges through Oriented Electric Fields, ACS nano. 18, 19828-19835 (2024) – IF: 18 (共同第一作者)

• D.-R. Chen∇, I.-F. Hu∇, H.-T Chin, Y.-C. Yao, R. Raman, M. Hofmann, C.-T. Liang, Y.-P. Hsieh*, Ultrahigh-quality graphene resonators by liquid-based strain-engineering, Nanoscale Horiz. 9, 156-161 (2024) – IF: 11.6 

• B Papnai, D.-R. Chen, R Ghosh, Z.-L. Yen, Y.-X. Chen, K.-U. Rehman, Y.-P. Hsieh,  M. Hofmann*, Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality, Nanomater., 14, 972 (2024) – IF: 5.3

• R. Raman, J. Muthu, Q. Mohammad, Y.-S. Chen, D.-R. Chen, Y.-P. Hsieh, M. Hofmann*, Selective Activation of MoS2 Grain Boundaries for Enhanced Electrochemical Activity, Nanoscale Horiz. 9, 946-955 (2024) – IF: 11.6

• H.-T. Chin, D.-C. Wang, P.-D. Gulo, Y.-C. Yao, H.-C. Yeh, J. Muthu, D.-R. Chen, T.-C. Kao, M. Kalbáč, P.-H. Lin, C.-M. Cheng, M. Hofmann, C.-T. Liang, H.-L. Liu, F.-C. Chuang, Y.-P. Hsieh*, Tungsten nitride (W5N6): An ultraresilient 2D semimetal, Nano Lett., 24, 63-67 (2024)– IF: 11.2

• H.-T. Chin, D.-C. Wang, H. Wang, J. Muthu, F. Khurshid, D.-R. Chen, M. Hofmann, F.-C. Chuang, Y.-P. Hsieh*, Confined VLS growth of single-layer 2D tungsten nitrides at wafer scale, ACS Appl. Mater. Interfaces., 16, 1705-1711(2024) - IF: 10.383

2023

• D.-R. Chen, J. Muthu, X.-Y. Guo, C. Chuang, H.-T. Chin, Y.-C. Lin, G. Haider, C.-C. Ting. M. Kalbáč, M. Hofmann, Y.-P. Hsieh*, Edge-dominated Hydrogen Evolution Reactions in Ultra-narrow MoS2 Nanoribbon Arrays, J. Mater. Chem.A, 11, 15802-15810 (2023) – IF: 14.5

• P.-S Borhade, T. Chen, D.-R. Chen, Y.-X. Chen, Y.-C. Yao, Z.-L.Yen, C.-H. Tsai, Y.-P. Hsieh*, Self-Expansion Based Multi-Patterning for 2D Materials Fabrication beyond the Lithographical Limit, Small, 20, 22, 2311209 (2023) -  IF: 13.2

• D.-R. Chen, H.T. Chin M. Hofmann, Y.-P. Hsieh*, " Efficient hydrogen evolution reaction in ultra-narrow MoS2 nanoribbon arrays ", Advanced Materials Research GRAND MEETING (MRM2023), Japan, 2023

• D.-R. Chen, H.T. Chin M. Hofmann, Y.-P. Hsieh*, " Edge-dominated Hydrogen Evolution Reactions in Ultra-narrow MoS2 Nanoribbon Arrays ", Advance in 2D Material Synthesis and Characterization, Taiwan, 2023

Before 2022

• Y.-Y. Wang∇, D.-R. Chen∇, J.-K. Wu, T.-H. Wang, C. Chuang, S.-Y. Huang W.-P. Hsieh, M. Hofmann, Y.-H. Chang, Y.-P. Hsieh*, 2D mechano-thermoelectric heterojunctions for self-powered strain sensors, Nano Lett. 21, 6990-6997 (2021) ∇ Shared first authorship– IF: 11.2  (共同第一作者)

• D.-R. Chen, Y.-Y. Wang, Y.-P. Hsieh*, 二維材料熱電材料的優勢及其檢測技術, 真空科技, 34, 8-16 (2021) 

• D.-R. Chen, M. Hofmann, H.-M. Yao, S. -K. Chiu, S. -H. Chen, Y.-R. Luo, C. -C. Hsu, Y.-P. Hsieh*, "Lateral Two-Dimensional Material Heterojunction Photodetectors with Ultrahigh Speed and Detectivity" ACS Appl. Mater. Interfaces. 11, 6384-6388 (2019) – IF: 10.383

• D.-R. Chen, S.-K. Chui, M.-P. Wu, Y.-P. Hsieh*, C.-C, Hsu, C.-C. Ting and M. Hofmann, " Ink-jet patterning of graphene by cap assisted barrier-guided CVD" RSC Adv. 9, 29105-29108 (2019) – IF: 4.36

• Y. -P. Hsieh*, D. -R. Chen, W.-Y. Chiang, K. -J. Chen, M. Hofmann, "Recrystallization of copper at a solid interface for improved CVD graphene growth" RSC Adv. 7, 3736-3740 (2017) – IF: 4.36 (第一學生作者)

• H.-T Chin, I.-F. Hu, D.-R. Chen, H.-T. Nguyen, T.-W. Chen, S.-W. Ma, C.-T. Liang, M. Hofmann, Y.-P. Hsieh*, Ferroelectric 2D ice under graphene confinement, Nat. Commun. 12, 6291 (2021) – IF: 16.6  

• S. -Y. Cai, C. -Y. Tzou, Y. -R. Liou, D.-R. Chen, C.-Y. Jiang, J. -M. Ma, C.-Y. Chang, C.-Y. Tseng, Y.-M. Liao, Y.-P. Hsieh, M. Hofmann*, Y.-F. Chen*, "Hybrid Optical/Electric Memristor for Light-Based Logic and Communication" ACS Appl. Mater. Interfaces. 4, 4649-4653 (2019) – IF: 10.383

• T. -W. Chen, D.-R. Chen, Y.-P. Hsieh*, "石墨烯在可撓式透明導電電極上的發展" 化工. 63, 5 (2016)