High-Voltage Power Semiconductor Modules for Next-Generation EVs and Offshore Wind Power Networks 

次世代EVや洋上風力発電電力ネットワークが必要とする高耐圧パワー半導体モジュール

The realization of next-generation power networks for efficiently transmitting electricity generated by offshore wind power, as well as next-generation electric vehicles (EVs), requires power semiconductor modules with high reliability and low power loss for AC–DC and DC–AC power conversion.

Silicon carbide (SiC) and gallium nitride (GaN) devices, which are expected to play key roles as next-generation power semiconductor devices, operate under internal electric fields that are more than an order of magnitude higher than those of conventional silicon (Si) devices. As a result, high electric field stress is applied to the insulating materials encapsulating the device surfaces, making enhanced dielectric strength of the insulation a critical challenge.

We are conducting research on solid insulating materials that contribute to the development of high-voltage power semiconductor modules capable of meeting these demanding requirements.

例えば、洋上風力発電の発電電力を効率よく流通する次世代電力ネットワークの構築や次世代EVの実現には、交流-直流/直流-交流電力変換に用いられるパワー半導体モジュールの高信頼性と低損失化が必要です。次世代パワー半導体素子として期待されるSiC素子、GaN素子は、内部電界が現行Si素子に比べて一桁以上高い電界で動作します。素子表面を封止する絶縁体に高い電界ストレスが加わるため、絶縁体の高耐圧化が極めて重要な課題となります。この高耐圧パワー半導体モジュールに資する固体絶縁材料の研究に取り組んでいます。