Research Areas and Publications

The laboratory’s research spans interconnected areas:

• Nano‑Instrumentation and Measurement Science
  Development and application of precision electrical and optoelectronic measurement techniques for nano‑scale devices, including custom experimental platforms for emerging materials and architectures.

• Electronic Sensors and Sensing Platforms
  Design of electronic and optoelectronic sensors with enhanced sensitivity, stability, and functionality, emphasizing physics‑based performance and practical implementation.

• Advanced Materials and Devices
  Investigation of electronic devices based on advanced materials, including two‑dimensional (2D) materials and heterostructures, with focus on charge transport, light–matter interaction, and structure–property relationships.

• Data‑Driven and Intelligent Methods
  Use of modeling, simulation, and machine learning as analytical tools to support device characterization, sensor optimization, and experimental interpretation.

Principal Investigator Publications (Google Scholar link)

1.    Chen, Y.R.; Simbulan, K.B.; Peng, G.H.; Chang, Y.C.; Chen, I.T.; Lo, H.C.; Chen, S.Y.; Cheng, S.J.; Lu, T.H.; Lan, Y.W. (2025). Twisted Light-Driven Exciton Dissociation for Enhanced Photoresponse in Monolayer MoS2 Transistors. ACS Nano.

2.     Yang, T.H.; Liang, B.W.; Hu, H.C.; Chen, F.X.; Ho, S.Z.; Chang, W.H.; Yang, L.; Lo, H.C.; Kuo, T.H.; Chen, J.H.; Lin, P.Y.; Simbulan, K.B.; Luo, Z.F.; Chang, A.C.; Kuo, Y.H.; Ku, Y.S.; Chen, Y.C.; Huang, Y.J.; Chang, Y.C.; Chiang, Y.F.; Lu, T.H.; Lee, M.H.; Li, K.S.; Wu, M.; Chen, Y.C.; Lin, C.L.; and Lan, Y.W. (2023). Ferroelectric Transistors Based on Shear-Transformation-Mediated Rhombohedral-Stacked Molybdenum Disulfide. Nature Electronics. https://doi.org/10.1038/s41928-023-01073-0

3.     Liang, B.W.; Chang, W.H.; Huang, C.S.; Huang, Y.J.; Chen, J.H.; Li, K.S.; Simbulan, K.B.; Kumar, H.; Su, C.Y.; Kuan, C.H.; Lan, Y.W. (2023). Self-Powered Broadband Photodetection Enabled by the Facile CVD-Grown MoS2/GaN Heterostructures. Nanoscale, 15, 18233.

4.   Guan, Shi-Xian; Yang, Tilo H.; Yang, Chi-Hao; Hong, Chuan-Jie; Liang, Bor-Wei; Simbulan, Kristan Bryan; Chen, Jyun-Hong; Su, Chun-Jung; Li, Kai-Shin; Zhong, Yuan-Liang; Li, Lain-Jong; Lan, Yann-Wen. (2023). Monolithic 3D Integration of Back-End Compatible 2D Material FET on Si FinFET. npj 2D Materials and Applications, 7, 1, 9.

5.  Liang, Bor-Wei; Li, Min-Fang; Lin, Hung-Yu; Li, Kai-Shin; Chen, Jyun-Hong; Shieh, Jia-Min; Wu, Chien-Ting; Simbulan, Kristan Bryan; Su, Ching Yuan; Kuan, Chieh-Hsiung; Lan, Yann-Wen. (2023). Dual-Mode Frequency Multiplier in Graphene-Base Hot Electron Transistor. Nanoscale, 15, 6, 2586-2594.

6.    Chien, Shih-Po; Chang, Yu-Chen; Simbulan, Kristan Bryan; Saha, Shantanu; Chiang, Yu-Fan; Saroj, Rajendra K; Yi, Gyu-Chul; Arafin, Shamsul; Lu, Ting-Hua; Lan, Yann-Wen. (2022). Helicity exchange and symmetry breaking of in-plane phonon scattering of h-BN probed by polarized Raman spectroscopy. Applied Physics Letters, 121, 18, 182203.

7.     Chang, Wen-Hao; Lu, Chun-I; Yang, Tilo H; Yang, Shu-Ting; Simbulan, Kristan Bryan; Lin, Chih-Pin; Hsieh, Shang-Hsien; Chen, Jyun-Hong; Li, Kai-Shin; Chen, Chia-Hao; Hou, Tuo-Hung; Lu, Ting-Hua; Lan, Yann-Wen. (2022). Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors. Nanoscale Horizons, 7, 12, 1533-1539.

8.     Feng, Y.J.; Simbulan, K.B.; Yang, T.H.; Chen, Y.R.; Li, K.S.; Chu, C.J.; Lu, T.H.; Lan, Y.W. (2022). Twisted light-induced photocurrent in a silicon nanowire field-effect transistor. ACS Nano, 16, 6, 9297-9303.

9.     Kesarwani, R.; Simbulan, K.B.; Huang, T.D.; Chiang, Y.F.; Yeh, N.C.; Lan, Y.W.; Lu, T.H. (2022). Control of trion-to-exciton conversion in monolayer WS2 by orbital angular momentum of light. Science Advances, 8, eabm0100.

10.  Simbulan, K.B.; Feng, Y.J.; Chang, W.H.; Lu, C.I.; Lu, T.H.; Lan, Y.W. (2021). Twisted light-enhanced photovoltaic effect. ACS Nano, 15, 14822-14829.

11.  Lu, C.I., Wang, S.A., Simbulan, K.B., Liu, C.M., Wang, X. Yu, G., Lin, W.C., Lu, T.H., Lan, Y.W. (2021). Twisted light induced magnetic anisotropy changes in an interlayer exchange coupling system. Nanoscale Horizons, 6, 462-467.

12.  Liang, B.W.; Chang, W.H.; Lin, H.Y.; Chen, P.C.; Zhang, Y.T.; Simbulan, K.B.; Li, K.S.; Chen, J.H.; Kuan, C.H.; Lan, Y.W. (2021). High-frequency graphene base hot-electron transistor. ACS Nano, 15, 6756-6764.

13.  Simbulan, K.B.; Huang, T.D.; Peng, G.H.; Li, F.; Gomez Sanchez, O.J.; Lin, J.D.; Lu, C.I.; Yang, C.S.; Qi, J.; Cheng, S.J.; Lu, T.H.; Lan, Y.W. (2021). Selective photoexcitation of finite-momentum excitons in monolayer MoS2 by twisted light. ACS Nano, 15 (2), 3481-3489.

14.  Yang, S.T.; Yang, T.H.; Lu, C.I.; Chang, W.H.; Simbulan, K.B.; Lan, Y.W. (2021). Room temperature negative differential resistance in clay-graphite paper transistors. Carbon, 176, 440-445.

15.  Lu, C.I.; Huang, C.H.; Yang, K.H.; Simbulan, K.B.; Li, K.S.; Li, F.; Qi, J.; Jugovac, M.; Cojocariu, I.; Feyer, V.; Tusche, C.; Lin, M.T.; Chuang, T.H.; Lan, Y.W.; Wei, D.H. (2020). Spontaneously induced magnetic anisotropy in an ultrathin Co/MoS2 heterojunction. Nanoscale Horizons, 5, 1058-1064.

16. Liang, B.W.; Huang, C.C.; Chao, S.P.; Kao, K.J.; Simbulan, K.B.; Lan, Y.W.; Kuan, C.H. (2020). Responsivity and detectivity enhancements by graphene overlay on normal-incident multicolor quantum grid infrared photodetectors. Optics Express, 28 (2), 2456-2465.

17. Lin, C.Y.; Simbulan, K.B.; Hong, C.J.; Li, K.S.; Zhong, Y.L.; Su, Y.K.; Lan, Y.W. (2020). Polarity-controllable MoS2 transistor for adjustable complementary logic inverter applications. Nanoscale Horizons, 5, 163-170.

18.  Li, F.; Huang, T.D.; Lan, Y.W.; Lu, T.H.; Shen, T.; Simbulan, K.B.; Qi, J. (2019). Anomalous lattice vibrations of CVD-grown monolayer MoS2 probed using linear polarized excitation light. Nanoscale, 11 (29), 13725-13730.

19.  Huang, T.D.; Simbulan, K.B.; Chiang, Y.F.; Lan, Y.W.; Lu, T.H. (2019). Symmetry breaking of in-plane Raman scattering by elliptically polarized light in MoS2. Physical Review B, 100 (19), 195414.

20. Simbulan, K.B.; Chen, P.C.; Lin, Y.Y.; Lan. Y.W. (2018). A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics. JoVE (Journal of Visualized Experiments), (138), e57885.