Below is a listing of peer-reviewed journal publications from our group. For a full list that includes conference proceedings and presentations, please see the Phillips CV or Google Scholar Profile Available Here.

[1] E. Moon, M. Barrow, J. Lim, J. Lee, S. R. Nason, J. Costello, H. S. Kim, C. Chestek, T. Jang, D. Blaauw, and J. D. Phillips, “Bridging the ‘Last Millimeter’ Gap of Brain-Machine Interfaces via Near-Infrared Wireless Power Transfer and Data Communications,” ACS Photonics, vol. 8, no. 5, pp. 1430–1438, May 2021, doi: 10.1021/acsphotonics.1c00160.

[2] M. Ahn, Y. Park, S. H. Lee, S. Chae, J. Lee, J. T. Heron, E. Kioupakis, W. D. Lu, and J. D. Phillips, “Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High-Entropy Oxides,” Advanced Electronic Materials, vol. 7, no. 5, p. 2001258, 2021, doi: https://doi.org/10.1002/aelm.202001258.

[3] H. N. Masten, J. D. Phillips, and R. L. Peterson, “Charge trapping and recovery in ALD HfO2/Beta-Ga2O3 (010) MOS capacitors,” Semicond. Sci. Technol., vol. 36, no. 4, p. 04LT01, Mar. 2021, doi: 10.1088/1361-6641/abe880.

[4] J. D. Phillips, “Energy Harvesting in Nanosystems: Powering the Next Generation of the Internet of Things,” Front. Nanotechnol., vol. 3, 2021, doi: 10.3389/fnano.2021.633931.

[5] J. D. Phillips, “Thermoradiative Cell Equivalent Circuit Model,” IEEE Transactions on Electron Devices, vol. 68, no. 2, pp. 928–930, Feb. 2021, doi: 10.1109/TED.2020.3041428.

[6] I. Ramiro, J. Villa, J. Hwang, A. J. Martin, J. Millunchick, J. Phillips and A. Martí, "Demonstration of a GaSb/GaAs Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point", Physical Review Letters 125, 247703 (2020).

[7] E. Moon, M. Barrow, J. Lim, D. Blaauw and J. D. Phillips, "Dual-Junction GaAs Photovoltaics for Low Irradiance Wireless Power Transfer in Submillimeter-Scale Sensor Nodes", IEEE Journal of Photovoltaics 10, 1721-1726 (2020).

[8] M. Barrow and J. Phillips, “Polarization-independent narrowband transmittance filters via symmetry-protected modes in high contrast gratings”, Optics Letters, vol. 45(15), pp. 4348-4351, 2020.

[9] E. Moon, I. Lee, D. Blaauw, and J. D. Phillips, "High-efficiency photovoltaic modules on a chip for millimeter-scale energy harvesting," Progress in Photovoltaics: Research and Applications, vol. 27, pp. 540-546, 2019.

[10] H. N. Masten, J. D. Phillips, and R. L. Peterson, "Ternary Alloy Rare Earth Scandate as Dielectric for β-Ga2O3 MOS Structures," IEEE Transactions on Electron Devices, vol. 66, pp. 2489-2495, 2019.

[11] J. Easley, C. R. Martin, M. H. Ettenberg, and J. Phillips, "InGaAs/GaAsSb Type II Superlattices for SWIR Detection," Journal of Electronic Materials, pp. https://doi.org/10.1007/s11664-019-07441-x, 2019.

[12] C. Chen, V. A. Stoica, R. D. Schaller, R. Clarke, and J. D. Phillips, "Carrier dynamics of intermediate sub-bandgap transitions in ZnTeO," Journal of Applied Physics, vol. 126, p. 135701, 2019.

[13] M. Ahn, A. Sarracino, A. Ansari, B. Torralva, S. Yalisove, and J. Phillips, "Surface morphology and straight crack generation of ultrafast laser irradiated β-Ga2O3," Journal of Applied Physics, vol. 125, p. 223104, 2019.

[14] J. Easley, E. Arkun, B. Cui, M. Carmody, L. Peng, M. Grayson, and J. Phillips, "Analysis of Carrier Transport in n-Type Hg1−xCdxTe with Ultra-Low Doping Concentration," Journal of Electronic Materials, vol. 47, pp. 5699-5704, July 17 2018.

[15] M. Barrow, M. Scherr, and J. Phillips, "Influence of Subwavelength Grating Asymmetry on Long-Wavelength Infrared Transmittance Filters," IEEE Photonics Journal, vol. 10, p. 2700808, 2018.

[16] M. Ahn, R. Cahyadi, J. Wendorf, W. Bowen, B. Torralva, S. Yalisove, and J. Phillips, "Low damage electrical modification of 4H-SiC via ultrafast laser irradiation," Journal of Applied Physics, vol. 123, p. 145106, 2018.

[17] M. Scherr, M. Barrow, and J. Phillips, "Long-wavelength infrared transmission filters via two-step subwavelength dielectric gratings," Optics Letters, vol. 42, pp. 518-521, 2017.

[18] I. Ramiro, J. Villa, C. Tablero, E. Antolín, A. Luque, A. Martí, J. Hwang, J. Phillips, A. J. Martin, and J. Millunchick, "Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics," Physical Review B, vol. 96, p. 125422, 09/15/ 2017.

[19] I. Ramiro, E. Antolin, H. Jinyoung, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick, J. Phillips, A. Marti, and A. Luque, "Three-bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells," IEEE Journal of Photovoltaics, vol. 7, pp. 508-12, 03/ 2017.

[20] E. Moon, D. Blaauw, and J. D. Phillips, "Subcutaneous Photovoltaic Infrared Energy Harvesting for Bio-implantable Devices," IEEE Transactions on Electron Devices, vol. 64, pp. 2432-2437, 2017.

[21] E. Moon, D. Blaauw, and J. D. Phillips, "Small-Area Si Photovoltaics for Low-Flux Infrared Energy Harvesting," IEEE Transactions on Electron Devices, vol. 64, pp. 15-20, 2017.

[22] E. Moon, D. Blaauw, and J. Phillips, "Infrared Energy Harvesting in Millimeter-Scale GaAs Photovoltaics," IEEE Transactions on Electron Devices, vol. 64, pp. 4554 - 4560, 2017.

[23] J. Easley, E. Arkun, M. Carmody, and J. Phillips, "Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density," Journal of Electronic Materials, vol. 46, pp. 5479-5483, May 24 2017.

[24] A. S. Teran, E. Moon, W. Lim, G. Kim, I. Lee, D. Blaauw, and J. D. Phillips, "Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions," IEEE Transactions on Electron Devices, vol. 63, pp. 2820-2825, 2016.

[25] S. Sengupta, T. Templeman, C. Chen, E. Moon, M. Shandalov, V. Ezersky, J. Phillips, and Y. Golan, "Chemical epitaxy and interfacial reactivity in solution deposited PbS on ZnTe," Journal of Materials Chemistry C, vol. 4, pp. 1996-2002, 2016.

[26] I. Ramiro, E. Antolín, J. Hwang, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick, J. Phillips, A. Martí, and A. Luque, "Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells," IEEE Journal of Photovoltaics, vol. 7, pp. 508-512, 2016.

[27] J. Foley, S. Daly, C. Lenaway, and J. Phillips, "Investigating Student Motivation and Performance in Electrical Engineering and its Subdisciplines," IEEE Trans. Education, vol. 59, pp. 241-247, 2016.

[28] M. DeJarld, A. Teran, M. Luengo-Kovac, L. Yan, E. Moon, S. Beck, C. Guillen, V. Sih, J. Phillips, and J. Mirecki Millunchick, "The effect of doping on low temperature growth of high quality GaAs nanowires on polycrystalline films," Nanotechnology, vol. 27, p. 495605, 2016.

[29] A. S. Teran, C. Chen, E. Lopez, P. G. Linares, I. Artacho, A. Marti, A. Luque, and J. D. Phillips, "Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnT-ZnSe Solar Cells," IEEE J. Photovoltaics, vol. 5, pp. 874-877, 2015.

[30] A. Teran, J. Wong, W. Lim, G. Kim, Y. Lee, D. Blaauw, and J. Phillips, "AlGaAs Photovoltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes," IEEE Transactions on Electron Devices, vol. 62, pp. 2170-2175, 2015.

[31] J. Foley and J. Phillips, "Normal incidence narrowband transmission filtering capabilities using symmetry protected modes of a dielectric grating," Optics Letters, vol. 40, pp. 2637-2640, 2015.

[32] L. Zhou, C. Chen, H. Jia, C. Ling, D. Banerjee, J. Phillips, and Y. Wang, "Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy," Journal of Electronic Materials, vol. 43, pp. 889-893, 2014/04/01 2014.

[33] S. A. Sis, S. Lee, V. Lee, A. K. Bayraktaroglu, J. D. Phillips, and A. Mortazawi, "Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators," Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on, vol. 61, pp. 231-238, 2014.

[34] E. Plis, S. Myers, D. Ramirez, E. P. Smith, D. Rhiger, C. Chen, J. D. Phillips, and S. Krishna, "Dual color longwave InAs/GaSb type-II strained layer superlattice detectors," Infrared Physics & Technology, 2014.

[35] J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick, "Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells," Physical Review Applied, vol. 1, p. 051003, 2014.

[36] J. M. Foley, S. M. Young, and J. D. Phillips, "Symmetry-protected mode coupling near normal incidence for narrow-band transmission filtering in a dielectric grating," Physical Review B, vol. 89, p. 165111, 2014.

[37] C. Chen, J. Zheng, K. Nguy, F. Naab, and J. Phillips, "Distinguishing Optical Behavior of Oxygen States and Native Deep Level Emission in ZnTe," Journal of Electronic Materials, vol. 43, pp. 879-883, 2014/04/01 2014.

[38] E. Antolin, C. Chen, I. Ramiro, J. Foley, E. Lopez, I. Artacho, J. Hwang, A. Teran, E. Hernandez, C. Tablero, A. Marti, J. D. Phillips, and A. Luque, "Intermediate Band to Conduction Band Optical Absorption in ZnTeO," IEEE Journal of Photovoltaics, vol. 4, pp. 1091-1094, 2014.

[39] M. J. Abere, C. Chen, D. R. Rittman, M. Kang, R. S. Goldman, J. D. Phillips, B. Torralva, and S. M. Yalisove, "Nanodot formation induced by femtosecond laser irradiation," Applied Physics Letters, vol. 105, p. 163103, 2014.

[40] A. J. Martin, J. Hwang, E. Marquis, E. P. Smakman, T. W. Saucer, G. V. Rodriguez, A. Hunter, V. Sih, P. M. Koenraad, J. D. Phillips, and J. Mirecki Millunchick, "The disintigration of GaSb/GaAs nanostructures upon capping," Applied Physics Letters, vol. 102, p. 113103, 2013.

[41] A. Lin and J. Phillips, "Resolving spectral overlap issue of intermediate band solar cells using non-uniform sub-bandgap state filling," Progress in Photovoltaics: Research and Applications, vol. 22, pp. 1062-1069, 2013.

[42] V. Lee, S. A. Sis, J. D. Phillips, and A. Mortazawi, "Intrinsically Switchable Ferroelectric Contour Mode Resonators," Microwave Theory and Techniques, IEEE Transactions on, vol. 61, pp. 2806-2813, 2013.

[43] J. Foley, S. Young, and J. Phillips, "Narrowband Mid-Infrared Transmission Filtering of a Single Layer Dielectric Grating," Applied Physics Letters, vol. 103, p. 071107, 2013.

[44] H. Chi, C. Chen, J. D. Phillips, and C. Uher, "Transport properties of ZnTe:N thin films," Applied Physics Letters, vol. 103, p. 042108, 2013.

[45] Chen, S. J. Kim, X. Pan, and J. D. Phillips, "Epitaxial growth of ZnTe on GaSb (100) using in situ ZnCl2 surface clean," Journal of Vacuum Science & Technology B vol. 31, p. 03C118, 2013.

[46] A. Chen, H. Zhou, Z. Bi, Y. Zhu, Z. Luo, A. Bayraktaroglu, J. Phillips, E.-M. Choi, J. L. MacManus-Driscoll, S. J. Pennycook, J. Narayan, Q. Jia, X. Zhang, and H. Wang, "A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure," Advanced Materials, vol. 25, pp. 1028-1032, 2013.

[47] J. J. Siddiqui, J. D. Phillips, K. Leedy, and B. Bayraktaroglu, "Bias-Temperature-Stress Characteristics of ZnO/HfO2 Thin Film Transistors," IEEE Transactions on Electron Devices, vol. 59, pp. 1488-1493, 2012.

[48] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu, "Illumination instabilities in ZnO/HfO¬2 thin film transistors and influence of grain boundary charge," Journal of Materials Research, vol. 27, pp. 2199-2204, 2012.

[49] S. J. Kim, B. C. Juang, W. Wang, J. R. Jokisaari, C. Chen, J. D. Phillips, and X. Pan, "Evolution of self-assembled Type-II ZnTe/ZnSe nanostructures: Structural and electronic properties," Journal of Applied Physics, vol. 111, p. 093524, 2012.

[50] A. M. Itsuno, J. D. Phillips, and S. Velicu, "Mid-Wave Infrared HgCdTe nBn Photodetector," Applied Physics Letters, vol. 100, p. 161102, 2012.

[51] A. Itsuno, J. Phillips, and S. Velicu, "Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector," Journal of Electronic Materials, vol. 41, pp. 2886-2892, 2012.

[52] J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips, "Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion," Journal of Applied Physics, vol. 111, p. 074514, 2012.

[53] J. Foley, A. Itsuno, T. Das, S. Velicu, and J. Phillips, "Broadband Long-Wavelength Infrared Si/SiO2 Subwavelength Grating Reflector," Optics Letters, vol. 37, pp. 1523-1525, 2012.

[54] A. Das, J. Heo, A. Bayraktaroglu, J. Phillips, W. Guo, T. K. Ng, B. Ooi, and P. Bhattacharya, "Room temperature strong coupling effects in a single ZnO nanowire microcavity," Optics Express, vol. 20, pp. 11830-11837, 2012.

[55] W. Weiming, Y. Jun, Z. Xin, and J. Phillips, "Intermediate-band solar cells based on dilute alloys and quantum dots," Frontiers of Optoelectronics in China, vol. 4, pp. 2-11, 2011.

[56] W. Wang, J. D. Phillips, S. J. Kim, and X. Pan, "ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells," Journal of Electronic Materials, vol. 40, pp. 1674-1678, 2011.

[57] J. Siddiqui, J. Phillips, B. Bayraktaroglu, and K. Leedy, "Admittance Spectroscopy of Interface States in HfO₂/ZnO thin films," IEEE Electron Device Letters, vol. 32, pp. 1713-1715, 2011.

[58] A. M. Itsuno, J. D. Phillips, and S. Velicu, "Predicted performance improvement of Auger-suppressed HgCdTe photodiodes and p-n heterojunction detectors," IEEE Transactions on Electron Devices, vol. 58, pp. 501-507, 2011.

[59] A. Itsuno, J. D. Phillips, and S. Velicu, "Design and modeling of HgCdTe n-B-n detectors," Journal of Electronic Materials, vol. 40, pp. 1624-1629, 2011.

[60] J. Hwang and J. Phillips, "Band Structure of Strain-Balanced GaAsBi/GaAsN Superlattices on GaAs," Phys. Rev. B, vol. 83, p. 195327, 2011.

[61] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips, and P. Wijewarnasuriya, "MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements," Journal of Electronic Materials, vol. 39, pp. 873-881, 2010.

[62] A. M. Itsuno, P. Y. Emelie, J. D. Phillips, S. Velicu, C. H. Grein, and P. S. Wijewarnasuriya, "Arsenic diffusion study in HgCdTe for low p-type doping in Auger suppressed photodiodes," Journal of Electronic Materials, vol. 39, pp. 945-950, 2010.

[63] X. Zhu, V. Lee, J. Phillips, and A. Mortazawi, "An Intrinsically Switchable FBAR Filter Based on Barium Titanate Thin Films," IEEE Microwave and Wireless Component Letters, vol. 19, pp. 359-361, 2009.

[64] W. Wang, A. Lin, J. D. Phillips, and W. Metzger, "Generation and recombination rates at ZnTe:O intermediate band states," Applied Physics Letters, vol. 95, p. 261107, 2009.

[65] W. Wang, A. Lin, and J. Phillips, "Intermediate-Band Photovoltaic Solar Cell Based on ZnTe:O," Applied Physics Letters, vol. 95, p. 011103, 2009.

[66] W. Wang, W. Bowen, S. Lin, S. Spanninga, and J. Phillips, "Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy," Journal of Electronic Materials, vol. 38, pp. 119-125, 2009.

[67] A. Lin and J. Phillips, "Drift-Diffusion Model for Intermediate-Band Solar Cell," IEEE Transactions on Electron Devices, vol. 56, pp. 3168-3174, 2009.

[68] A. Lin and J. Phillips, "Model for Intermediate Band Solar Cells Incorporating Carrier Transport and Recombination and Application to ZnTeO," Journal of Applied Physics, vol. 105, p. 064512, 2009.

[69] P. Y. Emelie, J. D. Phillips, S. Velicu, and P. S. Wijewarnasuriya, "Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger supression," J. Phys. D, vol. 42, p. 234003, 2009.

[70] W. E. Bowen, W. Wang, and J. D. Phillips, "Complementary Thin-Film Electronics Based on n-channel ZnO and p-channel ZnTe," IEEE Electron Device Letters, vol. 30, pp. 1314-1316, 2009.

[71] W. Wang, S. Lin, and J. Phillips, "Electrical characteristics and photoresponse of ZnO/ZnTe heterojunction diodes," Journal of Electronic Materials, vol. 37, pp. 1044-1048, 2008.

[72] A. Lin and J. Phillips, "Optimization of random diffraction gratings in thin film solar cells using genetic algorithms," Solar Energy Materials and Solar Cells, vol. 92, pp. 1689-1696, 2008.

[73] P. Y. Emelie, S. Velicu, C. H. Grein, J. D. Phillips, P. S. Wijewarnasuriya, and N. K. Dhar, "Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes Under Non-Equilibrium Operation," Journal of Electronic Materials, vol. 37, pp. 1362-1368, 2008.

[74] E. Cagin, J. Yang, W. Wang, J. D. Phillips, S. K. Hong, J. W. Lee, and J. Y. Lee, "Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy," Applied Physics Letters, vol. 92, p. 233505, 2008.

[75] W. Bowen, W. Wang, E. Cagin, and J. D. Phillips, "Quantum confinement and carrier localization effects in ZnO/Mg_xZn_1-xO Wells," Journal of Electronic Materials, vol. 37, pp. 749-754, 2008.

[76] J. S. Fu, X. A. Zhu, J. D. Phillips, and A. Mortazawi, "Improving Linearity of Ferroelectric-Based Microwave Tunable Circuits," IEEE Trans. Microwave Theory and Techniques, vol. 55, pp. 354-360, 2007.

[77] P. Y. Emelie, J. D. Phillips, S. Velicu, and C. H. Grein, "Modeling and Design Considerations of HgCdTe Infrared Detectors Under Non-Equilibrium Operation," J. Electron. Mater., vol. 36, pp. 846-851, 2007.

[78] P. Y. Emelie, J. D. Phillips, C. Fulk, J. Garland, and S. Sivananthan, "Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe," J. Electron. Mater., vol. 36, pp. 841-845, 2007.

[79] E. Cagin, D. Y. Chen, J. J. Siddiqui, and J. D. Phillips, "Hysteretic Metal-Ferroelectric-Semiconductor Capacitors Based on PZT/ZnO Heterostructures," J. Phys. D, vol. 40, pp. 2430-2434, 2007.

[80] J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, "ZnO Thin Film Transistors with Polycrystalline (Ba,Sr)TiO₃ Gate Insulators," Appl. Phys. Lett., vol. 88, p. 212903, 2006.

[81] T. E. Murphy, K. Moazzami, and J. D. Phillips, "Trap related photoconductivity in ZnO epilayers," Journal of Electronic Materials, vol. 35, pp. 543-549, 2006.

[82] K. Moazzami, T. E. Murphy, J. D. Phillips, M. Cheung, and A. N. Cartwright, "Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra," Semicond. Sci. Technol., vol. 21, pp. 717-723, 2006.

[83] P. Y. Emelie, J. D. Phillips, B. Buller, and U. D. Venkateswaran, "Free carrier absorption and lattice vibrational modes in bulk ZnO," Journal of Electronic Materials, vol. 35, pp. 525-529, 2006.

[84] D. Chen and J. D. Phillips, "Analysis and design optimization of electrooptic interferometric modulators for microphotonics applications," IEEE J. Lightwave Technology, vol. 24, pp. 2340-2346, 2006.

[85] D. Chen and J. D. Phillips, "Electric field dependence of piezoelectric coefficient in ferroelectric thin films," J. Electroceramics, vol. 17, pp. 613-617, 2006.

[86] T. E. Murphy, D. Y. Chen, and J. D. Phillips, "Growth And Electronic Properties Of ZnO Epilayers By Plasma-Assisted Molecular Beam Epitaxy," J. Electron. Mater., vol. 34, pp. 699-703, 2005.

[87] T. E. Murphy, D. Y. Chen, E. Cagin, and J. D. Phillips, "Electronic Properties Of ZnO Epilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy," J. Vac. Sci. Technol. B, vol. 23, pp. 1277-1280, 2005.

[88] T. E. Murphy, J. O. Blaszczak, K. Moazzami, W. E. Bowen, and J. D. Phillips, "Properties Of Electrical Contacts On Bulk And Epitaxial n-Type ZnO," J. Electron. Mater., vol. 34, pp. 389-394, 2005.

[89] K. Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, Y. Fink, and T. Tiwald, "Detailed Study Of Above Bandgap Optical Absorption In MBE HgCdTe," J. Electron. Mater., vol. 34, pp. 773-778, 2005.

[90] Chen and J. D. Phillips, "Extraction of Electro-Optic Coefficient in Thin-Film Linear Electro-Optic Mach-Zehnder Interferometers with Non-Periodic Intensity-Voltage Output Characteristics," Optical Engineering, vol. 44, p. 034601, 2005.

[91] D. Chen, T. E. Murphy, and J. D. Phillips, "Properties Of Ferroelectric Pb(Zr,Ti)O₃ Thin Films On ZnO/Al₂O₃ (0001) Epilayers," Thin Solid Films, vol. 491, pp. 301-304, 2005.

[92] T. E. Murphy, S. Walavalkar, and J. D. Phillips, "Epitaxial growth and surface modeling of ZnO on c-plane Al₂O₃," Applied Physics Letters, vol. 85, pp. 6338-6340, 2004.

[93] T. E. Murphy, D. Chen, and J. D. Phillips, "Electronic Properties Of Ferroelectric BaTiO₃/MgO Capacitors On GaAs," Applied Physics Letters, vol. 85, pp. 3208-3210, 2004.

[94] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, and J. Arias, "Optical absorption studies of HgCdTe epitaxial layers for improved infrared detector modeling," phys. Stat. Sol. (c), vol. 1, pp. 662-665, 2004.

[95] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, and J. Arias, "Optical Absorption Model for MBE HgCdTe and Application to Infrared Detector Photo Response," J. Electron. Mater., vol. 33, pp. 701-708, 2004.

[96] D. Chen, T. E. Murphy, S. Chakrabarti, and J. D. Phillips, "Optical Waveguiding In BaTiO₃/MgO/Al_xO_y/GaAs Heterostructures," Applied Physics Letters, vol. 85, pp. 5206-5208, 2004.

[97] S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y. Lei, N. Browning, and P. Bhattacharya, "Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots," Journal of Electronic Materials, vol. 33, pp. L5-8, 2004.

[98] J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee, and J. M. Arias, "Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy," Applied Physics Letters, vol. 83, pp. 3701-3703, 2003.

[99] K. Moazzami, D. Liao, J. D. Phillips, D. L. Lee, M. Carmody, M. Zandian, and D. Edwall, "Optical Absorption Properties of HgCdTe Epilayers with Uniform Composition," J. Electron. Mater., vol. 32, pp. 646-650, 2003.

[100] Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, and P. Bhattacharya, "Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum-Dot Infrared Photodetectors," IEEE Journal of Quantum Electronics, vol. 39, pp. 459-467, 2003.

[101] M. Carmody, D. Lee, M. Zandian, J. Phillips, and J. Arias, "Threading and Misfit-Dislocation Motion in Molecular-Beam-Epitaxy-Grown HgCdTe Epilayers," J. Electron. Mater., vol. 32, pp. 710-716, 2003.

[102] P. S. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. E. Dewames, G. Hildebrandt, J. Bajaj, J. Arias, A. I. D'Souza, and F. Moore, "Advances in Large-Area Hg1-xCdxTe Photovoltaic Detectors for Remote-Sensing Applications," Journal of Electronic Materials, vol. 31, pp. 726-31, 2002.

[103] B. Shin, B. Lita, R. S. Goldman, J. D. Phillips, and P. Bhattacharya, "Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots," Applied Physics Letters, vol. 81, pp. 1423-25, 2002.

[104] J. D. Phillips, D. D. Edwall, and D. L. Lee, "Control Of Very-Long-Wavelength Infrared HgCdTe Detector Cutoff Wavelength," Journal of Electronic Materials, vol. 31, pp. 664-668, 2002.

[105] J. Phillips, "Evaluation of the fundamental properties of quantum dot infrared detectors," Journal of Applied Physics, vol. 91, pp. 4590-4594, 2002.

[106] S. Krishna, A. D. Stiff-Roberts, J. D. Phillips, P. Bhattacharya, and S. W. Kennerly, "Features - Hot Dot Detectors - Infrared quantum dot intersubband photodetectors are a promising technology for multiwavelength IR detection," IEEE circuits and devices, vol. 18, p. 14 (11 pages), 2002.

[107] K. Kim, J. Urayama, T. Norris, J. Singh, J. Phillips, and P. Bhattacharya, "Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots," Applied Physics Letters, vol. 81, pp. 670-2, 2002.

[108] J. Phillips, D. Edwall, D. Lee, and J. Arias, "Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements," J. Vac. Sci. Technol. B, vol. 19, pp. 1580-4, 2001.

[109] D. Edwall, J. Phillips, D. Lee, and J. Arias, "Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry," Journal of Electronic Materials, vol. 30, pp. 643-6, 2001.

[110] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann, and K. Namjou, "Carrier-dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors," Journal of Crystal Growth, vol. 227, pp. 27-35, 2001.

[111] B Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya, "Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices," Surface Review and Letters, vol. 7, pp. 539-45, 2000.

[112] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz, "InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition," Journal of Crystal Growth, vol. 211, pp. 400-4, 2000.

[113] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz, "Exploring new active regions for type I InAsSb strained-layer lasers," Journal of Electronic Materials, vol. 29, pp. 91-3, 2000.

[114] R. M. Biefeld and J. D. Phillips, "Growth of InSb on GaAs using InAlSb buffer layers," Journal of Crystal Growth, vol. 209, pp. 567-71, 2000.

[115] Z. Weidong, O. Qasaimeh, J. Phillips, S. Krishna, and P. Bhattacharya, "Bias-controlled wavelength switching in coupled-cavity In_0.4Ga_0.6As/GaAs self-organized quantum dot lasers," Applied Physics Letters, vol. 74, pp. 783-5, 1999.

[116] O. Qasaimeh, W. D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya, and M. Dutta, "Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers," Applied Physics Letters, vol. 74, pp. 1654-6, 1999.

[117] J. D. Phillips, P. K. Bhattacharya, and U. D. Venkateswaran, "Photoluminescence studies on self-organized InAlAs/AlGaAs quantum dots under pressure," Physica Status Solidi B, vol. 211, pp. 85-9, 1999.

[118] J. Phillips, K. Kamath, P. Bhattacharya, and U. Venkateswaran, "Temperature-dependent photoluminescence of In _0.5Al_0.5As/Al_0.25Ga_0.75As self-organized quantum dots," Journal of Applied Physics, vol. 85, pp. 2997-9, 1999.

[119] J. Phillips, P. Bhattacharya, and U. Venkateswaran, "Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots," Applied Physics Letters, vol. 74, pp. 1549-51, 1999.

[120] J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman, and M. Dutta, "Self-assembled InAs-GaAs quantum-dot intersubband detectors," IEEE Journal of Quantum Electronics, vol. 35, pp. 936-43, 1999.

[121] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya, "Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots," Applied Physics Letters, vol. 75, pp. 2797-9, 1999.

[122] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya, "Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots," Applied Physics Letters, vol. 74, pp. 2824-6, 1999.

[123] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya, and J. C. Jiang, "Self-organized In_0.4Ga_0.6As quantum-dot lasers grown on Si substrates," Applied Physics Letters, vol. 74, pp. 1355-7, 1999.

[124] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya, "Growth and electroluminescent properties of self-organized In_0.4Ga_0.6As/GaAs quantum dots grown on silicon," J. Vac. Sci. Technol. B, vol. 17, pp. 1116-19, 1999.

[125] K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya, and J. C. Jiang, "In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates," Journal of Crystal Growth, vol. 201, pp. 1186-9, 1999.

[126] D. Klotzkin, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya, "Electron intersubband energy level spacing in self-organized In_0.4Ga_0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements," J. Vac. Sci. Technol. B, vol. 17, pp. 1276-80, 1999.

[127] P. Bhattacharya, K. K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H. T. Jiang, N. Chervela, T. B. Norris, T. Sosnowski, J. Laskar, and M. R. Murty, "In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties," IEEE Transactions on Electron Devices, vol. 46, pp. 871-83, 1999.

[128] P. Bhattacharya, K. Kamath, J. Phillips, and D. Klotzkin, "Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications," Bulletin of Materials Science, vol. 22, pp. 519-29, 1999.

[129] O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In_0.4Ga_0.6As/GaAs quantum dots," Applied Physics Letters, vol. 72, pp. 1275-7, 1998.

[130] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya, "Intersubband absorption and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots," J. Vac. Sci. Technol. B, vol. 16, pp. 1343-6, 1998.

[131] J. Phillips, K. Kamath, T. Brock, and P. Bhattacharya, "Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors," Applied Physics Letters, vol. 72, pp. 3509-11, 1998.

[132] J. Phillips, K. Kamath, and P. Bhattacharya, "Far-infrared photoconductivity in self-organized InAs quantum dots," Applied Physics Letters, vol. 72, pp. 2020-2, 1998.

[133] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya, "Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots," Applied Physics Letters, vol. 71, pp. 2079-81, 1997.

[134] K. Kamath, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya, "Small-signal modulation and differential gain of single-mode self-organized In_0.4Ga_0.6As/GaAs quantum dot lasers," Applied Physics Letters, vol. 70, pp. 2952-3, 1997.

[135] K. Kamath, P. Bhattacharya, and J. Phillips, "Room temperature luminescence from self-organized In_xGa_1-xAs/GaAs (0.35<x<0.45) quantum dots with high size uniformity," Journal of Crystal Growth, vol. 175, pp. 175-1762, 1997.

[136] J. Phillips, K. Kamath, J. Singh, and P. Bhattacharya, "Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: blue shift in luminescence spectra," Applied Physics Letters, vol. 68, pp. 1120-2, 1996.

[137] K. Kamath, J. Phillips, J. Singh, and P. Bhattacharya, "Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls," J. Vac. Sci. Technol. B, vol. 14, pp. 2312-14, 1996.

[138] K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris, and J. Phillips, "Room-temperature operation of In_0.4Ga_0.6As/GaAs self-organised quantum dot lasers," Electronics Letters, vol. 32, pp. 1374-5, 1996.

[139] P. F. Baude, M. A. Haase, G. M. Haugen, K. K. Law, T. J. Miller, K. Smekalin, J. Phillips, and P. Bhattacharya, "Conduction band offsets in CdZnSe/ZnSSe single quantum wells measured by deep level transient spectroscopy," Applied Physics Letters, vol. 68, pp. 3591-3593, 1996.