THAPAR INSTITUTE OF ENGINEERING &TECHNOLOGY
(Deemed to be University)
Department of Electronics and Communication Engineering
Tutorial Sheet-1 (Electronics Engineering, UEC-001)
Q1.In your own words, define intrinsic and extrinsic material.
Q2. Describe the difference between n-type and p-type semiconductor materials?
Q3. Consider a Si PN junction diode at room temperature T=300K, doped at N_A=〖10〗^16/〖cm〗^3 in the P-region and N_D=〖10〗^17/〖cm〗^3 in the N-region and n_i=1.5×〖10〗^10/〖cm〗^3 for Si at room temperature, where N_A and N_D are acceptor and donor concentrations, and n_i is the intrinsic carrier concentration. Calculate the built-in potential for the junction.
Q4. Find DC resistance of a diode, if voltage applied across a Ge diode at room temperature (300K) is 0.3V. IS at this temperature is 2µA. Take ideality factor=1.
Q5. Explain the diode equivalent circuits viz. Piecewise-Linear, Simplified and ideal circuit of diode.