Publications

Peer-review

2025  

• Wang Yixin, Sreenath Mylo Valappil, Yuki Katamune, Itsuki Misono, Ikegami Yuto, Hiroshi Naragino, Phongsaphak Sittimart, Abdelrahman Zkria, and Tsuyoshi Yoshitake, Materials Letters, (2025): (Under minor revision)

• Sreenath Mylo Valappil, Taisuke Kageura, Shinya Ohmagari, Shinobu Onoda, Phongsaphak Sittimart, Hiroshi Naragino, and Tsuyoshi Yoshitake, “Harsh environment-immune all-carbon visible light photodetector: NV center-enabled sensitivity enhancement”, Small, (2025) 21: 2409876. https://doi.org/10.1002/smll.202409876

• Nattakorn Borwornpornmetee, Phongsaphak Sittimart, Thawichai Traiprom, Boonchoat Paosawatyanyong, Tsuyoshi Yoshitake, Nathaporn Promros, “Investigation into the impedance, dielectric behavior, and conductivity within p-silicon/n-nanocrystalline iron disilicide heterojunctions and equivalent circuit model in relation to temperature”, Materials Science in Semiconductor Processing, (2025) 188, 109184. https://doi.org/10.1016/j.mssp.2024.109184

• Nattakorn Borwornpornmetee, Thawichai Traiprom, Takafumi Kusaba, Phongsaphak Sittimart, Hiroshi Naragino, Boonchoat Paosawatyanyong, Tsuyoshi Yoshitake, Nathaporn Promros, “Modification of wetting and mechanical traits via rapid annealing under varying temperatures for β-FeSi2”, Journal of Materials Science, (2025) 60: 2524 – 2540. https://doi.org/10.1007/s10853-024-10539-1
  
  

2024

• Nattakorn Borwornpornmetee, Phongsaphak Sittimart, Thawichai Traiprom, Boonchoat Paosawatyanyong, Tsuyoshi Yoshitake, Nathaporn Promros, “Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering”, Materials Science in Semiconductor Processing, (2024) 179: 108499. https://doi.org/10.1016/j.mssp.2024.109184

• Phongsaphak Sittimart, Yu Sasaguri, Sarayut Tunmee, Tsuyoshi Yoshitake, Kotaro Ishiji and Shinya Ohmagari, “Enlargement of effective area in Schottky barrier diodes on heteroepitaxial (001) diamond substrates by defect reduction and their radiation tolerance”, Diamond and Related Materials, (2024) 147: 111346. https://doi.org/10.1016/j.diamond.2024.111346

• Sreenath Mylo Valappil, Abdelrahman Zkria, Phongsaphak Sittimart, Shinya Ohmagari, Tsuyoshi Yoshitake, “Maximizing visible Raman resolution of nanodiamond grains fabricated by coaxial arc plasma deposition through oxygen plasma etching optimization”, Surface and Interface Analysis, (2024) 56(4): 230-238. https://doi.org/10.1002/sia.7289
  
  

2023

• Nattakorn Borwornpornmetee, Thawichai Traiprom, Takafumi Kusaba, Phongsaphak Sittimart, Hiroshi Naragino, Boonchoat Paosawatyanyong, Tsuyoshi Yoshitake and Nathaporn Promros, “Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures”, Heliyon, (2023) 9: 1-12. https://doi.org/10.1016/j.heliyon.2023.e22511

• Nattakorn Borwornpornmetee, Phongsaphak Sittimart, Rungrueang Phatthanakun, Hideki Nakajima, Boonchoat Paosawatyanyong, Tsuyoshi Yoshitake and Nathaporn Promros, “Physical feature exploration of nanocrystalline FeSi2 surface with argon plasma etching under varying power”, Vacuum, (2023) 218: 112588. https://doi.org/10.1016/j.vacuum.2023.112588

• Chien-Yie Tsay, Hsuan-Meng Tsai, Phongsaphak Sittimart, Sreenath Mylo Valappil, Takafumi Kusaba and Tsuyoshi Yoshitake, “A comparative study of photoelectric performance of Ga2O3 solar-blind photodetectors with symmetric and asymmetric electrodes”, Thin Solid Films, (2023) 785: 140095. https://doi.org/10.1016/j.tsf.2023.140095

• Takafumi Kusaba, Phongsaphak Sittimart, Yuki Katamune, Taisuke Kageura, Hiroshi Naragino, Shinya Ohmagari, Sreenath Mylo Valappil, Satoki Nagano, Abdelrahman Zkria, Tsuyoshi Yoshitake, “Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering”, Applied Physics Express, (2023) 16: 105503-1-7. https://doi.org/10.35848/1882-0786/acfd07

• Nattakorn Borwornpornmetee, Rawiwan Chaleawpong, Peerasil Charoenyuenyao, Adison Nopparuchikun, Boonchoat Paosawatyanyong, Phongsaphak Sittimart, Tsuyoshi Yoshitake and Nathaporn Promros, “Impedance characteristics under different voltages of n-β-FeSi2/p-Si heterojunctions constructed via facing target sputtering”, Materials Science in Semiconductor Processing, (2023) 165: 107671. https://doi.org/10.1016/j.mssp.2023.107671

• Chien-Yie Tsay, Hsuan-Meng Tsai, Phongsaphak Sittimart, Sreenath Mylo Valappil, Takafumi Kusaba, Tsuyoshi Yoshitake, “Optoelectronic characteristics of gallium oxide deep ultraviolet photodetectors with symmetric and asymmetric metal contacts”, (2023) 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 – Proceedings: 230-231. https://ieeexplore.ieee.org/abstract/document/10264995

• Phongsaphak Sittimart, Shinya Ohmagaria, Hitoshi Umezawa, Hiromitsu Kato, Kotaro Ishiji, Tsuyoshi Yoshitake, “Thermally stable and radiation-proof visible-light photodetectors made from N-doped diamond”, Advanced Optical Materials, (2023) 2203006: 1-8. https://doi.org/10.1002/adom.202203006

2022

• Chien-Yie Tsay, Yun-Chi Chen, Hsuan-Meng Tsai, Phongsaphak Sittimart, Tsuyoshi Yoshitake, “The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors.” Materials, (2022) 15, 8145. https://doi.org/10.3390/ma15228145

• Tomoki Iwao, Phongsaphak Sittimart, Tsuyoshi Yoshitake, Hitoshi Umezawa, Shinya Ohmagari. “Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes.” Physica Status Solidi (A), (2022) 219 (20): 2100846. https://doi.org/10.1002/pssa.202100846

• Sreenath Mylo Valappil, Shinya Ohmagari, Abdelrahman Zkria, Phongsaphak Sittimart, Eslam Abubakr, Hiromitsu Kato, and Tsuyoshi Yoshitake. “Nanocarbon Ohmic Electrodes Fabricated by Coaxial Arc Plasma Deposition for Phosphorus-Doped Diamond Electronics Application.” AIP Advances, (2022) 12 (8): 085007. https://doi.org/10.1063/5.0093470

• Peerasil Charoenyuenyao, Rawiwan Chaleawpong, Nattakorn Borwornpornmetee, Boonchoat Paosawatyanyong, Phongsaphak Sittimart, Tsuyoshi Yoshitake, Nathaporn Promros. “Investigation of Morphological Surface Features, Wetting Behavior and Mechanical Traits under Various Substrate Temperatures for Beta Iron Disilicide Prepared via Facing-Targets Sputtering.” Materials Science in Semiconductor Processing, (2022) 146 (March): 106604. https://doi.org/10.1016/j.mssp.2022.106604

• Nattakorn Borwornpornmetee, Rawiwan Chaleawpong, Peerasil Charoenyuenyao, Adison Nopparuchikun, Boonchoat Paosawatyanyong, Phongsaphak Sittimart, Tsuyoshi Yoshitake, Nathaporn Promros. “Reverse Bias Dependent Impedance and Dielectric Properties of Al/n-NC FeSi2/p-Si/Pd Heterostructures Formed by Facing-Targets Sputtering.” Materials Science in Semiconductor Processing, (2022) 146 (August 2021): 106641. https://doi.org/10.1016/j.mssp.2022.106641

2021

• Phongsaphak Sittimart, Shinya Ohmagari, Takashi Matsumae, Hitoshi Umezawa, and Tsuyoshi Yoshitake. “Diamond/β-Ga2O3 pn Heterojunction Diodes Fabricated by Low-Temperature Direct-Bonding.” AIP Advances, (2021) 11 (10): 105114. https://doi.org/10.1063/5.0062531

• Phongsaphak Sittimart, Shinya Ohmagari, and Tsuyoshi Yoshitake. “Enhanced In-Plane Uniformity and Breakdown Strength of Diamond Schottky Barrier Diodes Fabricated on Heteroepitaxial Substrates.” Japanese Journal of Applied Physics, (2021) 60 (SB): SBBD05. https://doi.org/10.35848/1347-4065/abd537

• Borwornpornmetee, Nattakorn, Peerasil Charoenyuenyao, Rawiwan Chaleawpong, Boonchoat Paosawatyanyong, Rungrueang Phatthanakun, Phongsaphak Sittimart, Kazuki Aramaki, Takeru Hamasaki, Tsuyoshi Yoshitake, and Nathaporn Promros. 2021. "Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment" Coatings 11, no. 8: 923. https://doi.org/10.3390/coatings11080923

2020

• Rawiwan Chaleawpong, Nathaporn Promros, Peerasil Charoenyuenyao, Nattakorn Borwornpornmetee, Pattarapol Sittisart, Phongsaphak Sittimart, Yūki Tanaka, and Tsuyoshi Yoshitake. “Photovoltaic, Capacitance-Voltage, Conductance-Voltage, and Electrical Impedance Characteristics of p-Type Silicon/Intrinsic-Silicon/n-Type Semiconducting Iron Disilicide Heterostructures Built via Facing Target Direct-Current Sputtering.” Thin Solid Films, (2020) 709 (September): 138229. https://doi.org/10.1016/j.tsf.2020.138229

• Abdelrahman Zkria, Eslam Abubakr, Phongsaphak Sittimart, Tsuyoshi Yoshitake. “Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-F.” Journal of Nanomaterials, (2020) July: 1–9. https://doi.org/10.1155/2020/4917946

2019

• Weerasaruth Kaenrai, Nathaporn Promros, Phongsaphak Sittimart, Rawiwan Chaleawpong, Peerasil Charoenyuenyao, Thanachai Changcharoen, Adison Nopparuchikun, Tomohiro Nogami, and Tsuyoshi Yoshitake. “Photovoltaic Properties and Series Resistance of P-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering.” Journal of Nanoscience and Nanotechnology, (2019) 19 (3): 1445–50. 

2018

• Phongsaphak Sittimart, Asanlaya Duangrawa, Peeradon Onsee, Sakmongkon Teakchaicum, Adison Nopparuchikun, and Nathaporn Promros. “Interface State Density and Series Resistance of n -Type Nanocrystalline FeSi2/p -Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering.” Journal of Nanoscience and Nanotechnology, (2018) 18 (3): 1841–46. 

• Phongsaphak Sittimart, Adison Nopparuchikun, Peeradon Onsee, Asanlaya Duangrawa, Sakmongkon Teakchaicum, and Nathaporn Promros. “Characterization of Junction Parameters in N-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunctions.” Materials Today: Proceedings, (2018) 5 (5): 10970–78. 

• Rawiwan Chaleawpong, Nathaporn Promros, Peerasil Charoenyuenyao, Adison Nopparuchikun, Phongsaphak Sittimart, Tomohiro Nogami, and Tsuyoshi Yoshitake. “Production of P-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density.” Physica Status Solidi (A), (2018) 215 (20): 1701022. 

2017

• Adison Nopparuchikun, Nathaporn Promros, Sakmongkon Teakchaicum, Peeradon Onsee, Asanlaya Duangrawa, and Phongsaphak Sittimart. “Carrier Transportation Properties and Series Resistance of n-Type β-FeSi2/p-Type Si Heterojunctions Fabricated by RF Magnetron Sputtering.” Japanese Journal of Applied Physics, (2017) 56 (6S2): 06HE06.

• Phongsaphak Sittimart, Adison Nopparuchikun, and Nathaporn Promros. “Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering.” Advances in Materials Science and Engineering, (2017) 2017: 1–8.

• Adison Nopparuchikun, Nathaporn Promros, Phongsaphak Sittimart, Peeradon Onsee, Asanlaya Duangrawa, Sakmongkon Teakchaicum, Tomohiro Nogami, and Tsuyoshi Yoshitake. “Interface-State Density Estimation of n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition.” Advances in Natural Sciences: Nanoscience and Nanotechnology, (2017) 8 (3): 035016. 

2016

• Nathaporn Promros, Ryuji Baba, Hirokazu Kishimoto, Phongsaphak Sittimart, Takanori Hanada, Kenji Hanada, Abdelrahman Zkria, Mahmoud Shaban, and Tsuyoshi Yoshitake. “Characterization of n-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunctions at Low Temperatures.” Journal of Nanoelectronics and Optoelectronics, (2016) 11 (5): 579–84. 

• Nathaporn Promros, Ryuji Baba, Motoki Takahara, Tarek M. Mostafa, Phongsaphak Sittimart, Mahmoud Shaban, and Tsuyoshi Yoshitake. “Epitaxial Growth of β-FeSi2 Thin Films on Si(111) Substrates by Radio Frequency Magnetron Sputtering and Their Application to Near-Infrared Photodetection.” Japanese Journal of Applied Physics, (2016) 55 (6S2): 06HC03. 

• Nathaporn Promros, Phongsaphak Sittimart, and Weerasaruth Kaenrai. “Investigation of Electrical Transport Properties in Heterojunctions Comprised of Silicon Substrate and Nanocrystalline Iron Disilicide Films.” International Journal of Nanotechnology, (2016) 13: 903. (IF:1.02)

• Nathaporn Promros, Phongsaphak Sittimart, Nattatip Patanoo, Sukrit Kongnithichalerm, Mati Horprathum, Worawan Bhathumnavin, and Boonchoat Paosawatyanyong. “Physical Properties of Copper Films Deposited by Compact-Size Magnetron Sputtering Source with Changing Magnetic Field Strength.” Key Engineering Materials, (2016) 675–676 (January): 193–96. 

2015

• Nathaporn Promros, Dalin Prajakkan, Nantharat Hongsa, Nattanee Suthayanan, Phongsaphak Sittimart, Motoki Takahara, Ryuji Baba, Tarek M Mostafa, Mahmoud Shaban, and Tsuyoshi Yoshitake. “Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions.” Advanced Materials Research, (2015) 1120–1121 (July): 435–39.

• Nathaporn Promros, Kenji Hanada, Motoki Takahara, Takanori Hanada, Ryuji Baba, Phongsaphak Sittimart, Li Chen, and Tsuyoshi Yoshitake. “Characterization of N-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunction Photodiodes.” Advanced Materials Research, (2015) 1131 (December): 20–24. 

Book & Chapter

2025

• Ayawanna, J., Chaiyaput, S., Kidkhunthod, P., Sittimart, P., Lakhonchai, A. and Tunmee, S. (2025). UV – Vis Spectroscopy for Energy Storage and Related Materials . In Energy Storage Materials Characterization (eds Y. Tang and W. Yao). https://doi.org/10.1002/9783527834679.ch15

Presentation & Conferences

1.     Diamond-based photodetectors: Visible-light photodetection of N-doped diamond under extreme environments

Oral presentation, 33rd International Conference on Diamond and Carbon Materials (ICDCM), Palau de Congressos de Palma, Mallorca, Spain, September 10-14, 2023.

2.     High breakdown voltage (> 500 V) of diamond Schottky barrier diodes fabricated on heteroepitaxial diamond (100) substrates

Poster presentation, 33rd International Conference on Diamond and Carbon Materials (ICDCM), Palau de Congressos de Palma, Mallorca, Spain, September 10-14, 2023.

3.     Application of diamond in thermal-stable and radiation-proof electronics

Oral presentation (Invited speaker), 4th International conference of Chemical, Energy and Environmental Engineering, Egypt Japan University of Science and Technology, Alexandria, Egypt, July 7-18, 2023.

4.     Unidirectionally-oriented growth of β-Ga2O3 Thin Films on diamond (100) by RF magnetron sputtering

Oral presentation, The 7th ASIAN Applied Physics Conference, Oita University, Japan, Nov 26-27, 2022

5.     Visible-light photodetection of N-doped diamond via charge neutralized impurity levels for harsh-environmental implementations

Oral presentation (Invited as a Young plenary talk), The 7th ASIAN Applied Physics Conference, Oita University, Japan, Nov 26-27, 2022

6.     Killer defects reduction and enhancement of device uniformity in diamond Schottky barrier diodes utilizing heavily W incorporated diamond layer prepared by hot-filament CVD.

Oral presentation, The 19th Cat-CVD Research Meeting, AIST Kyushu Center and Kyushu Synchrotron Light Research Center, Japan, July 14-15, 2022

7.     Large-Area (> 1 mm) Diamond Schottky Barrier Diodes with Low Leakage Current.

Oral presentation, 15th International Conference on New Diamond and Nano Carbons (NDNC), Kanazawa Bunka Hall, Japan, June 5-9, 2022

8.     Thermally Stable and Radiation-Proof Visible-Light Photodetectors Made from N-Doped Diamond.

Poster presentation, 15th International Conference on New Diamond and Nano Carbons (NDNC), Kanazawa Bunka Hall, Japan, June 5-9, 2022

9.     p-Type diamond/n-type β-Ga2O3 heterojunctions fabricated using direct-bonding technique.

Oral presentation (Online), 2021 MRS Fall Meeting & Exhibit, Hynes Convention Center, USA, Dec 6-8, 2021

10.  Characterization of X-Ray Radiation Hardness of Diamond Schottky Barrier Diodes up to 10 MGy.

Oral presentation (Online), The International Union of Materials Research Societies - International Conference in Asia 2021 (IUMRS-ICA 2021), ICC Jeju, Korea, Oct 3-8, 2021

11.  X-Ray Radiation Hardness of Diamond Schottky Barrier Diodes up to 10 MGy.

Oral presentation (Online), 31st International Conference on Diamond and Carbon Materials (ICDCM2021), ONLINE: Live and on-demand, Sept 6-9, 2021

12.  Improved Uniformity and Breakdown Strength of Schottky Barrier Diodes Fabricated on Diamond Heteroepitaxial Substrates.

Oral presentation (Online), 応用物理学会春季学術講演会, Online, 2021年3月16-19日

13.  Schottky Barrier Diodes Fabricated on Homoepitaxial Diamond Layer Grown onto Diamond Heteroepitaxial Substrate.

Oral presentation (Online), The 5th Asian Applied Physics Conference (Asian-APC), Online, Japan, Nov 28-29, 2020

14.  Diamond Schottky Barrier Diodes Fabricated on Heteroepitaxial Substrates.

Oral presentation (Online), JSAP 2020 International Conference on Solid State Devices and Materials (SSDM2020) Online, Japan, Sept 27-30, 2020