GeChi Compound Semiconductor Co., Ltd. (GCCS) is a premier semiconductor material provider specializing in high-purity Silicon Carbide (SiC) crystal growth. As a cornerstone of Taiwan’s semiconductor ecosystem, we command over 50% of the local SiC growth capacity. Our mission is to accelerate the global transition to high-efficiency power electronics in EV, AI data centers, and renewable energy systems. 

Since our founding in 2022, we have successfully mass-produced 6-inch and 8-inch wafers and achieved a landmark technical breakthrough in 12-inch monocrystalline SiC development. By combining PhD-level material science with scalable manufacturing, GCCS provides a high-yield, cost-effective alternative to global incumbents. 

We are committed to strengthening the U.S. supply chain through strategic co-development in AI infrastructure and next-generation power modules, ensuring long-term reliability and material resilience for the future of North American advanced semiconductor manufacturing and clean energy innovation.

Our core technology centers on proprietary high-purity SiC crystal growth and advanced thermal field design, enabling the reliable production of large-diameter 8-inch and 12-inch wafers. 

A key differentiator is our "Wafer-to-Die Fingerprint Traceability" system, an integrated identification framework that tracks defect parity from the substrate level down to individual bare dies. This proprietary approach ensures unprecedented quality consistency and transparency for mission-critical applications, such as 800V EV architectures and hyperscale AI power supply units. 

Furthermore, GCCS has pioneered the development of 12-inch monocrystalline SiC wafers, positioning us among an elite group of global producers capable of 300mm transition. 

Our technical authority is reinforced by extensive IP protections and ongoing R&D partnerships with leading institutions like ITRI, focusing on optimizing yield, reducing defect density, and significantly enhancing the lifetime performance of next-generation wide-bandgap semiconductors for industrial power electronics.

1. Our objective is to engage U.S. automotive OEMs, AI data center providers, and power-module IDMs. By showcasing high-yield 8-inch and 12-inch SiC wafers with proprietary traceability, we aim to secure strategic co-development partnerships and long-term supply agreements within the North American semiconductor ecosystem.

2. We seek to finalize our USD $40,000,000 funding round by the end of May. These resources will accelerate our U.S. expansion, support the scaling of 12-inch monocrystalline SiC production, and facilitate establishing a localized technical support team in regions like Arizona.