Publications

Google Scholar: Min-Kyu Joo

[2025]

[76] (Corresponding author) "Probability Bits in Emerging 2D Multilayers" (Preparing) (2025).

[75] (Corresponding author) "Mixed-dimensional JFET for Photodetector" (Under Revision) (2025).

[74] "Quantum Fluctuations and Carrier Transport in 2D Transistors on Ferroelectrics" (Sumbitted) (2025).

[73] "Phase-Selective Growth of Violet Phosphorus Crystals via Sn-Bi Flux", ACS Nano (2025).

[72] (Corresponding author) "High-Temperature Negative Differential Resistance in Tungsten Diselenide Multilayers without Heterojunctions", Materials Horizons (2025).

[71] (Corresponding author) "Numerical Simulation Approach for Contact and Interlayer Resistance Effects on Current Distribution in 2D Multilayers" (Front Cover), Appl. Sci. Converg. Technol. (2025).

[70] (Corresponding author) "CMOS-Integrable Ambipolar Tellurene nanofilm-based Negative Differential Transconductance Transistor for Multi-Valued Logic Computing", Nanoscale (2025).

[69] (Corresponding author) "Ideal Thickness in 2D van der Waals Multilayers with Vertical Double Side Contacts", ACS Appl. Mater. Interfaces (2025).

[68] (Corresponding author) "Multifunctional CMOS-Integrable and Reconfigurable 2D Ambipolar Tellurene Transistors for Neuromorphic and In-Memory Computing", Nanoscale Horizons (2025).

[2024]

[67] (Corresponding author) "Understanding Coulomb Scattering Mechanism in Ambipolar Tellurium Nanosheet Transistors", ACS Appl. Electron. Mater. (2024).

[66] (Corresponding author) "Strong Contact Resistance Effects on Vertical Carrier Density Profile within WSe2 Multilayers", Apl. Phys. Lett. (2024).

[2023]

[65] (Corresponding author) "Negative Differential Interlayer Resistance in WSe2 Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts", ACS Appl. Mater. Interfaces (2023).

[64] (Corresponding author) "Electrically Tunable Magnetic Fluctuations in Multilayered Vanadium-Doped Tungsten Diselenide", Nat. Electron. (2023).

[63] (Corresponding author) "Enhanced Interlayer Charge Injection Efficiency in 2D Multilayer ReS2 via Vertical Double-Side Contacts", ACS Appl. Mater. Interfaces (2023).

[62] (Corresponding author) "Prediction of Absolute Hall Effect Sensitivity and Minimum Magnetic Resolution for 2D ReS2 Multilayer Magnetic Sensors without Magnetic Fields", Appl. Sci. Converg. Technol. (2023).

[2022]

[61] "Tailorable Electronic and Electric Properties of Graphene with Selective Decoration of Silver Nanoparticles by Laser-Assisted Photoreduction", Nanomaterials (2022).

[60] (Corresponding author) "High Temperature Carrier Scattering Mechanisms in Multilayer ReS2 Field-Effect Transistors", (Editor's Pick and Front Cover), Appl. Sci. Converg. Technol. (2022).

[59] (Corresponding author) "Understanding Random Telegraph Noise in Two-Dimensional BP/ReS2 Heterointerface", Appl. Phys. Lett. (2022).

[58] (Corresponding author) "Hidden Surface Channel in Two-Dimensional Multilayers", 2D Mater. (2022).

[57] (Corresponding author) "Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions", Adv. Funct. Mater. (2022).

[2021]

[56] (Corresponding author) "Restricted Channel Migration in 2D Multilayer ReS2", ACS Appl. Mater. Interfaces (2021).

[55] (Corresponding author) "Degradation Pattern of Contact Resistance and Characteristic Trap Energy in Blue Organic Light-Emitting Diodes", Org. Electron. (2021). 

[54] "Metal contacts improvement in multilayer WSe2 transistor through strong hot carrier injection", ACS Appl. Mater. Interfaces (2021).

[53] (Corresponding author) "Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation", npj 2D materials and applications (2021).

[2020]

[52] "Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET", Nanotechnology (2020).

[51] (Corresponding author) "Coulomb drag transistor using a graphene and MoS2 heterostructure", Commun. Phys. (2020).

[50] (Corresponding author) "Origin of Relaxation Frequency Shift in Blue Organic Light-Emitting Diodes ", Appl. Phys. Lett. (2020).

[49] (Corresponding author) "Origin of Exciplex Degradation in Organic Light Emitting Diodes: Thermal Stress Effects over Glass Transition Temperature of Emission Layer", Appl. Phys. Lett. (2020).

[48] (Corresponding author) "High-Mobility Junction Field-Effect Transistor via Graphene/MoS2 Heterointerface", Sci. Rep. (2020).

[47] (Corresponding author) "Effect of Interlayer Tunneling Barrier on Carrier Transport and Fluctuation in Multilayer ReS2", Appl. Phys. Lett. (2020).

[46] (Corresponding author) "Understanding tunable photoresponsivity of two-dimensional multilayer phototransistors: Interplay between thickness and carrier mobility", Appl. Phys. Lett. (2020).

[45] (Corresponding author) "Drain Induced Barrier Increasing in Multilayer ReS2", 2D Mater. (2020).

[2019]

[44] "Ultra-short vertical-channel van der Waals semiconductor transistors", Adv. Sci. (2019).

[43] "Impact of heat treatment on hetero-stacked MoS2/hBN field-effect transistor", IEEE Electron Device Lett. (2019).

[42] "Temperature-Dependent Opacity of Gate Field inside a MoS2 Field Effect Transistor", ACS Appl. Mater. Interfaces (2019).

[41] "Effect of Ir(pq)2acac doping on CBP in phosphorescence organic light-emitting diodes", Curr. Appl. Phys. (2019).

[40] (Corresponding author) "Room-Temperature Mesoscopic Fluctuation and Coulomb Drag in Multilayer WSe2", Adv. Mater. (2019).

[39] “Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating”, ACS Appl. Mater. Interfaces (2019).

[38] (Corresponding author) “Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide”, Adv. Mater. (2019).

[37] (Corresponding author) “Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-κ passivation and Schottky barrier height”, Nanotechnology (2019).

[2018]

[36] (Corresponding author) “Electrothermal Local Annealing via Graphite Joule Heating on Two-Dimensional Layered Transistors”, ACS Appl. Mater. Interfaces (2018).

[35] “Hydrothermal synthesis of stable 1T‐WS2 and single walled carbon nanotube hybrid flexible thin films with highly enhanced thermoelectric performance”, Energy Technol. (2018).

[34] “Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2”, Nat. Commun. (2018).

[33] “Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors”, 2D Mater. (2018).

[2017]

[32] (First author) “Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy”, Nat. Commun. (2017).

[31] “Hydrothermal synthesis of stable metallic 1T phase WS2 nanosheets for thermoelectric application”, Nanotehcnology (2017).

[30] “Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites”, ACS Appl. Mater. Interfaces (2017).

[29] (First author) “Ultra-stretchable Analog/Digital Signal Transmission Line with Carbon Nanotube Sheets”, ACS Appl. Mater. Interfaces (2017).

[28] (First author) “Feasibility of Ultra-Sensitive Two-Dimensional Layered Hall Elements”, 2D Mater. (2017).

[27] (Corresponding author) “Degradation Pattern of Black Phosphorus Multilayer Field-Effect Transistors in Ambient Conditions: Strategy for contact resistance engineering in BP transistors”, Appl. Surf. Sci (2017).

[26] “Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering”, Appl. Phys. Lett. (2017).

[25] “Junction-Structure-Dependent Schottky Barrier Inhomogenity and Device Ideality of Monolayer MoS2 Field-Effect Transistors”, ACS Appl. Mater. Interfaces (2017).

[24] (First author) “Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer”, ACS Appl. Mater. Interfaces (2017).

[2016]

[23] (First author) “Strong Coulomb scattering effects on low frequency noise in monolayer WS2 field-effect transistors”, Appl. Phys. Lett. (2016).

[22] (First author) “Electron excess doping and effective Schottky barrier reduction on MoS2/h-BN heterostructure”, Nano Lett. (2016).

[21] (First author) “Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic Field”, ACS Nano (2016).

[20] (First author) “Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics”, ACS Appl. Mater. Interfaces (2016).

[19] “Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure”, ACS Appl. Mater. Interfaces (2016).

[2015]

[18] (First author) “Evaluation of power generated by thermoelectric modules comprising a p-type and n-type single walled carbon nanotube composite paper”, RSC Adv. (2015).

[17] “Improved ohmic contacts for SiC nanowire devices with nickel-silicide”, Jour. Alloy. Compd. (2015).

[16] “Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer”, Nanotechnology (2015).

[2014]

[15] “Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors”, Jour. Appl. Phys. (2014).

[14] “Separation of interlayer resistance in multilayer MoS2 field-effect transistors”, Appl. Phys. Lett. (2014).

[13] “Separation of surface accumulation and bulk neutral channel in junctionless transistors”, Appl. Phys. Lett. (2014).

[12] “Nitrogen plasma treatment of parallel-aligned SnO2 nanowire field-effect transistors” Jour. Korean Phys. Soc. (2014).

[11] “Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO TFTs”, Thin Solid Films (2014). 

[10] “Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO TFTs”, Jour. Appl. Phys. (2014).

[9] (First author) “Effect of intertube junctions on the thermoelectric power of monodispersed single walled CNT networks”, Jour. Phys. Chem. C (2014).

[8] (First/Corresponding author) “Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature”, Semicond. Sci. Tech. (2014).

[7] “Inductively coupled plasma etching of hafnium–indium–zinc oxide using chlorine based gas mixtures”, Jpn. Jour. Appl. Phys. (2014).

[6] “Low-Frequency Noise in Multilayer MoS2 Field-Effect Transistors: The Effect of High-k Passivation”, Nanoscale (2014).

[2013]

[5] (First/Corresponding author) “Static and low frequency noise characterization of N-type random network of carbon nanotubes TFTs”, Jour. Appl. Phys. (2013).

[4] (First author) “Channel access resistance effects on charge carrier mobility and low-frequency noise in a PMMA passivated SnO2 nanowire field-effect transistors”, Appl. Phys. Lett. (2013).

[2012]

[3] “Reduced charge fluctuations in individual SnO2 nanowires by suppressed surface reactions”, Jour. Mater. Chem. (2012).

[2011]

[2] (First author) “A dual analyzer for real-time impedance and noise spectroscopy of nanoscale devices”, Rev. Sci. Instrum. (2011). 

[1] “Controlled surface adsorption of fd filamentous phage by tuning of the pH and the functionalization of the surface”, Jour. Appl. Phys. (2011). 

[9] "Field effect transistor", KR 10-2025-0137252.

[8] "Electronic Device Using 2D Materials", KR 10-2658232-0000.

[7] "Single Material Electronic Device", KR 10-2486162-0000.

[6] "Simultaneous Measurement System of Luminance, Impedance, and Noise Characteristics of Light Emitting Devices in real time", KR 10-2237741-0000.

[5] "Transistor and preparation method there of", KR 10-1978944-0000.

[4] "Apparatus and method for detecting gas", KR 10-1179143-0000.

[3] "Tilt sensor and fabrication method of the tilt sensor", KR 10-1232067-0000.

[2] "Apparatus and method for determining the relative ratio of the semiconducting/metallic carbon nanotubes of carbon nanotube network transistor, and a medium having computer readable program for executing the method", KR 10-1054309-0000.

[1] "System and method for measuring impedance and noise characteristic simultaneously, and a medium having computer readable program for executing the method", KR 10-1145267-0000.