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Characterization Facilities
Vacuum & low temp. probe station (4 probes) with B1500A
- Vacuum level: ~ 10^-6
- Temperature: 80K ~ 450 K (LN2)
- Measurement system: Agilent B1500A
- Current level: ~ pA
Vacuum probe station (3 probes) with B2912A
- Vacuum level: ~ 10^-6
- Measurement system: Agilent B2902A
- Current level: ~ pA
Probe station (4 probes) for sensors with B2902A
- Photodetector: monochrometer/black body/IR lasers
- Bio-sensor measurement system
Gas sensor measurement system with B2902A
- Inlet connects with 3 types of gas lines
- Measurement system: Agilent B2902A
- Current level: ~ pA
Semiconductor parameter analyzer (Keysight / B1500A)
- Current-voltage (0.1 fA - 1A / 0.5 μV - 200 V)
- Quasi-static capacitance-voltage (QS-CV)
- AC capacitance (1kHz to 5MHz)
- Waveform Generator/Fast Measurement Unit (100 ns)
Semiconductor parameter analyzer (Keysight / B2902A & 2912A)
- B2902A: Current-voltage (100 fA - 1A / 1 μV - 210 V)
- B2912A: Current-voltage (10 fA - 1A / 1 μV - 210 V)
Confocal analyzer (EL, PL, Raman, PC) with B2902A
- CCD Spectroscopy (PyLoN 400BR, Princeton Instrument)
- PC / Raman/ PL mapping (XperRam200, Nano base)
- SMU with electrical probes: B2902A, modusys
Vacuum cryo chamber for confocal system (BX51, Olympus)
- Temp.: 77 ~ 400K
- Electrical measurements via 4-pin electrical feed wire
Optical & physical property measurement system (O-PPMS) with B1500A
- Atto DRY 2100 (1.5~300K, 0~9T)
- XperRam 200 (PC / Raman / EL / PL confocal system)
Elipsometer
- Investigate the thickness/dielectric properties/composition of thin films
- Visible Range : 350~840 nm (1.5~3.5 eV)
- Thickness Range : 1Å ~ 3um
Atomic Force Microscope (AFM)
- Force measurement, topographic imaging, and manipulation with high-resolution (order of nm)
- Contact/True Non-contact AFM, Phase imaging, DC-EFM, PFM, Conductive AFM, MFM
Fabrication Facilities
O2 Plasma
- 6'' X 6.5'' chamber
- 45 W Maximum RF Power
E-beam Evaporator
- Metal : Au, Cr, Pt, Pd, Y, Ni, Ag, Al, Fe, Ti etc.- Automatic evaporation
- 4-inch wafer scale
- Vacuum level : < 1 X 10-6
SEM & E-beam lithography & EDS (JEOL / JSM6510 & NPGS & Oxford / AZtec Live Lite )
- Direct magnification : x5 to 300,000
- Electron gun : W filament, Fully automatic gun alignment
- Probe current : 1 pA to 0.3 μA*5
- Maximum specimen size : 150 mm dia. × 48 mm (H)
Atomic Layer Deposition ( NCD / Lucida D Series)
- Thin film process for ALD research: Al2O3, (Zr)HfO2, TiO2, ZnO
- 100~200mm wafers
- Applications of R&D
- 25℃ ~ 350 ℃ (± 0.2 ℃) @ 1Torr, in wafer
Dry Transfer System
- Optics, temperature controller
- Dry transfer system
- This system is used to transfer exfoliated or CVD-growth 2D materials.
Rapid Thermal Annealing ( ULTECH Co., Ltd. / Real RTP 100 )
- Temperature Range : 150℃ ~ 600℃ (± 3℃) @ 5.0E-2 Torr, on Silicon wafer
- Gas Supply : Nitrogen ( Maximum 1000 sccm ) for 1 channels
- Substrate holder Size : 4 inch
- Heating rate: 10~200℃/sec for Silicon wafer
Synthesis Facilities
MoS2 CVD chamber (6 inch)
- 6 inch quartz tube.
- Argon, Hydrogen, Air, H2S gas
- Vacuum by dry pump
- Temperature limit: ~ 1200 ° C
Graphene CVD chamber (2 inch)
- 2 inch quartz tube.
- Argon, Hydrogen, Methane gas
- Vacuum by rotary pump
- Temperature limit: 1100 ° C
Graphene CVD chamber (3 inch)
- 3 inch quartz tube.
- Argon, Hydrogen, Methane gas
- Vacuum by rotary pump
- Temperature stable zone: 7 X 30 cm
- Temperature limit: 1200 ° C
Boron Nitride CVD chamber
- 1 inch quartz tube.
- Argon, hydrogen, methane gas
- Vacuum by rotary pump
- Temperature limit: 1100 ° C
WSe2 CVD chamber
- 1 inch quartz tube.
- Argon, hydrogen gas
- Temperature limit: 1100 ° C
MoS2 CVD chamber
- 1 inch quartz tube.
- Argon, hydrogen gas
- Temperature limit: 1100 ° C
Gas & vacuum annealing chamber
- 1 inch quartz tube.
- Argon, hydrogen gas
- Vacuum by rotary pump
- Temperature limit: 1100 ° C
Ambient annealing chamber
- 1.5 inch quartz tube.
- Temperature limit: 900 ° C
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