‘Transparent p-type SnO(x) thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing’, Applied Physics Letters, 2010, 97, (5)
'P-type oxide based thin film transistors produced at low temperatures,' in Oxide-Based Materials and Devices Iii. vol. 8263, F. H. Teherani, D. C. Look, and D. J. Rogers, Eds., ed, 2012.
‘Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper’, Applied Surface Science, 2008, 254, (13), pp. 3949-3954
Have a look on the complete list bellow:
https://scholar.google.com/citations?user=bKh2BLoAAAAJ&hl=en
‘Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate’
‘P-type material useful for manufacturing electronic devices, comprises alloys based on copper oxides, tin oxides, tin-copper oxides, nickel oxides, or nickel-tin oxides, and the corresponding metal species’
PhD thesis under the link: https://run.unl.pt/handle/10362/9296
MSc thesis: <ongoing>
Licenciatura thesis: <ongoing>