Summary (Updated: Dec 2019)

Funded projects: 5, Book chapters: 4, Patents: 2 (provisional), Invited talks: 13,

Journals: 27, Conference/Symposium presentations: 66, Posters: 17, Citations: 451

Funded projects

F5. NSF PFI-TT, NY, USA 2019. (Amount: $250,000 for 2 years), with Dr. Vladimir Protasenko as the PI.

F4. NSF I-Corps teams nationals award for customer discovery, NY, USA 2018. (Amount: $50,000 for 7 weeks), with Dr. Vladimir Protasenko as the PI.

F3. Packaging of high-efficiency deep ultra-violet light emitting diodes for disinfection. Funded by Cornell scale-up and prototype funding, NY, USA 2017. (Amount: $25,000 for 3 months)

F2. Survey and equipment testing regarding solar home systems of Bangladesh. Funded by Infrastructure development company limited, Bangladesh, 2009. (Amount: Approx. $12,000)

F1. Design and implementation of efficient charging and discharging unit for LED based rechargeable lighting scheme designed for solar home systems for Technosol, Dhaka, Bangladesh, 2008.

Book chapters

B4. S.M. Islam, S. Bharadwaj, K. Lee, V. Protasenko, H. Xing, and D. Jena, ‘Enhancing Optical and Electrical Efficiency for Deep-UV Light Emitting Diodes: From Crystal Growth to Devices’: Ch. 10, 1st edition of Light-Emitting Diodes-Materials, Processed, Devices and Applications, Springer Nature Singapore Pte Ltd., 2019.

B3. J. Verma, S.M. Islam, A. Verma, V. Protasenko, H. Xing, and D. Jena, ‘Nitride LEDs based on Q. wells and Q. dots’: Ch. 12, 2nd edition of Nitride sem. LEDs, Woodhead pub., Cambridge, 2017.

B2. J. Verma, A. Verma, V. Protasenko, S.M. Islam, H. Xing, and D. Jena, ‘Nitride LEDs based on Q. wells and Q. dots’: Ch. 12, 1st edition of Nitride sem. LEDs, Woodhead pub., Cambridge, 2014.

B1. S. M. Moududul Islam, Ehtesham Bin Quddus, Lal Mohammad, ‘Electronic States in Novel Low Dimensional Semiconductor Structures’, published as a book by Lambert Academic Publishing (LAP), ISBN: 978-3-8443-8065-1, 2011.

Patents

P2. US provisional application no. 62/586,466 on Nov 15, 2017:

Polarization filed assisted heterostructure design for efficient deep ultra-violet light emitting diodes

S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena

P1. US provisional application no. 62/586,488 filed on Nov 15, 2017:

Light emitting diodes using ultra-thin quantum heterostructures

S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena

Invited talks

I13. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘The role of heterostructure design to overcome the efficiency bottleneck of deep-UV light emitters’, Chinese Academy of Sciences, Beijing, China, 2018.

I12. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘A route to enhance the efficiency of deep-UV photonic devices: smart heterostructure design’, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, 2018.

I11. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘Smart heterostructure design to overcome the efficiency bottleneck of deep UV photonics’, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh, 2018.

I10. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘Future of III-Nitride photonics: deep-UV light emitters for disinfection’, Brac University, Dhaka, Bangladesh, 2018.

I9. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘Deep UV photon emission from GaN: pushing the limits of quantum confinement’, Khulna University of Engineering and Technology, Khulna, Bangladesh, 2018.

I8. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘Light assisted disinfection for marine bio-fouling and healthcare’, Jessore University of Science and Technology, Jessore, Bangladesh, 2018.

I7. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘Deep-UV light for disinfection applications: Challenges and solutions’, Independent University Bangladesh, Dhaka, Bangladesh, 2018.

I6. S.M. Islam, Huili (Grace) Xing, and Debdeep Jena, ‘III-Nitrides for UV-photonics: present and future trends’, East West University, Dhaka, Bangladesh, 2018.

I5. S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Samira Chandra, Jai Verma, Huili (Grace) Xing, and Debdeep Jena, ‘Deep UV LEDs with GaN/AlN quantum structures using polarization-induced doping’, IEEE-EDS mini symposium on Electronics and Photonics, University of Notre Dame, Indiana, USA, 2015.

I4. S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, & Debdeep Jena, ‘A roadmap to efficient deep UV photonics’, East West University, Dhaka, Bangladesh, 2015.

I3. S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Jai Verma, Huili (Grace) Xing, and Debdeep Jena, ‘Role of molecular beam epitaxy in getting efficient deep UV light emitters’, Islamic University of Technology, Gazipur, Bangladesh, 2015.

I2. S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Jai Verma, Huili (Grace) Xing, and Debdeep Jena, ‘Deep UV LED challenges : From crystal growth to devices’, United International University, Dhaka, Bangladesh, 2015.

I1. S.M. Islam, Jai Verma, Vladimir Protasenko, Anthony Hoffman, Huili (Grace) Xing, and Debdeep Jena, ‘Deep UV LEDs: Applications, Challenges and Opportunities’, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh, 2014.

Journals

J27. T. Wei*, S. M. Islam*, U. Jahn, J. Yan, K. Lee, S. Bharadwaj, X. Ji, J. Wang, J. Li, V. Protasenko, H. G. Xing,² and, D. Jena, ‘GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy, Optics Letters, 2019 (*Equal contribution).

J26. R. (Lily) Xu , M. M. Rojo, S. M. Islam , A. Sood, B. Vareskic, A. Katre, N. Mingo, K. E. Goodson, H. Xing, D. Jena, and E. Pop , ‘Thermal conductivity of crystalline AlN and the influence of atomic-scale defects', Journal of Applied Physics, Vol 126, Issue 18, 2019 .

J25. M. M. Rahman, A. B. Puthirath , A. Adumbumkulath, T. Tsafack, H. Robatjazi ,M. Barnes, Z. Wang, S. Kommandur, S. Susarla, S. M. Sajadi, D. Salpekar, F. Yuan, G. Babu, K. Nomoto, SM Islam, R. Verduzco, S. K. Yee, H. G. Xing, P. M. Ajayan , ‘Fiber Reinforced Layered Dielectric Nanocomposite’, Adv. Func. Materials, Vol 29, Issue 28, 1900056, 2019.

J24. S. Bharadhwaj*, S. M. Islam*, K. Nomoto, V. Protasenko, A. Chaney, H. G. Xing, and D. Jena, ‘Bandgap narrowing and Mott transition in Si-doped Al_0.7GaN’, Applied Physics Letters, 2018 (*Equal contribution).

J23. W. Li, K. Nomoto, K. Lee, S. M. Islam, Z. Hu, M. Zhu, X. Gao, J. Xie, M. Pilla, D. Jena, and H. G. Xing et al, ‘Activation of buried p-GaN in MOCVD-regrown vertical structures ’, Appl. Phys. Letters, 113, 062105, 2018.

J22. W. Li, K. Nomoto, K. Lee, S. M. Islam, Z. Hu, M. Zhu, X. Gao, M. Pilla, D. Jena, and H. G. Xing et al, ‘Development of GaN vertical trench-MOSFET with MBE regrown channel’, IEEE Trans. on Elect. Devices, Vol 65, Issue 6, 2018.

J21. J. Encomendero, Rusen Yan, Amit Verma, S. M. Islam, V. Protasenko, S. Rouvimov, P. Fay, D. Jena, and H. G. Xing et al, ‘Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm²’, Appl. Phys. Letters, 112, 103101, 2018.

J20. Cheng Liu, Y. K. Ooi, S. M. Islam, H. G. Xing, D. Jena, and Jing Zhang, ‘234 nm and 246 nm AlN-Delta-GaN Quantum Well Deep Ultraviolet Light-Emitting Diodes’, Appl. Phys. Letters, 112, 011101, 2018.

J19. W. Li, K. Nomoto, K. Lee, SM Islam, Z. Hu, M. Zhu, X. Gao, M. Pilla, D. Jena and H. G. Xing, ‘600 V GaN vertical V-trench MOSFET with MBE regrown channel’, Device Research Conference, USA, 2017.

J18. S. Bharadwaj, SM Islam, K. Lee, A. Devine, V. Protasenko, S. Rouvimov, H. G. Xing, and D. Jena, ‘High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE’, Device Research Conference, USA, 2017.

J17. J. Encomendero, F. A. Faria, S. M. Islam, V. Protasenko, S. Rouvimov, B. S. Rodriguez, P. Fay, D. Jena, and H. G. Xing et al, ‘New tunneling features in polar III-nitride resonant tunneling diodes’, Phys. Rev. X, 7, 041017, 2017.

J16. H. C. Quispe*, S. M. Islam*, S. Bader, A. Chanana, K. Lee, R. Chaudhuri, A. Nahata, H. G. Xing, D. Jena, B. S. Rodriguez, ‘Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells’, Appl. Phys. Letters, 111, 073102, 2017. (*Equal contribution)

J15. S. M. Islam, V. Protasenko, K. Lee, S. Rouvimov, J. Verma, Huili (Grace) Xing, and D. Jena, ‘Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures’, Applied Physics Letters, 111, 091104, 2017.

J14. Cheng Liu, Y. K. Ooi, S. M. Islam, J. Verma, H. G. Xing, D. Jena, and Jing Zhang, ‘Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes’, Applied Physics Letters, 110, 071103, 2017.

J13. S. M. Islam, K. Lee, V. Protasenko, S. Rouvimov, J. Verma, S. Bharadwaj, Huili (Grace) Xing, and D. Jena, ‘ MBE-grown 232-270 nm deep-UV LEDs using monolayer-thin binary GaN/AlN quantum heterostructures’, Applied Physics Letters, 110, 041108, 2017. (This work has been covered by more than 35 news media)

J12. Alexander Chaney, Meng Qi, SM Islam, Huili (Grace) Xing, and Debdeep Jena, ‘GaN Tunnel Switch Diodes’, Device Research Conference, Delaware, USA, 2016.

J11. SM Islam, Meng Qi, Bo Song, Kazuki Nomoto, Vladimir Protasenko, Jingshan Wang, Sergei Rouvimov, Patrick Fay, Huili (Grace) Xing and Debdeep Jena, ‘First Demonstration of Strained AlN/GaN/AlN Quantum Well FETs on SiC’, Device Research Conference, Delaware, USA, 2016.

J10. D. Bayerl*, S. M. Islam*, C. M. Jones, V. Protasenko, D. Jena, and E. Kioupakis, ‘Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures’, Applied Physics Letters, 109, 241102, 2016. (*Equal contribution)

J9. S. M. M. Islam, Y. Arafat, M. Z. R. Khan, M. I. B. Chowdhury, ‘Base Transit Time Modeling of Gaussian-Doped SiGe HBT Considering Field-Dependence of Mobility’, International Journal of Research in Electronics and Computer Engineering, Vol. 4, Issue 1, PP: 53-59, 2016.

J8. S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, and Debdeep Jena, ‘Sub-230 nm deep-UV emission from GaN quantum dots in AlN grown by a modified Stranski-Krastanov mode’, Japanese Journal of Applied Physics, Vol 55, 05FF06, 2016.

J7. S.M. Islam, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, and Debdeep Jena, ‘High-quality InN films on GaN using graded InGaN buffers by MBE’, Japanese Journal of Applied Physics, Vol 55, 05FD12, 2016.

J6. SM Islam, Vladimir Protasenko, Sergei Rouvimov, Jai Verma, Huili (Grace) Xing and Debdeep Jena ‘Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures’, Device Research Conference, Columbus, Ohio, USA, 2015.

J5. Xiaodong Yan, Wenjun Li, S.M. Islam, Kasra Pourang, Huili (Grace) Xing, Patrick Fay, and Debdeep Jena, ‘Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions’, Applied Physics Letters, 107, 163504, 2015.

J4. Kaijun Feng, William Streyer, S. M. Islam, Jai Verma, Debdeep Jena, Daniel Wasserman, and Anthony J. Hoffman, ‘Localized surface phonon polariton resonances in polar gallium nitride’, Applied Physics Letters 107, 081108, 2015.

J3. S.M. Moududul Islam, Md. Iqbal Bahar Chowdhury, Yeasir Arafat, and Md. Ziaur Rahman Khan, ‘Physics-Based Analysis of the Base Transit Time in SiGe-HBT with Gaussian Doped Base’, ISTP Journal of Research in EEE (As part of IOCRSEM 2014).

J2. Jai Verma, S.M. Islam, Vladimir Protasenko, Prem Kumar Kandaswamy, Huili (Grace) Xing and Debdeep Jena, ‘Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures’, Applied Physics Letters 104, 021105, 2014.

J1. Shahriar A. Chowdhury, Monjur Mourshed, S.M. Raiyan Kabir, Moududul Islam, Tanvir Morshed, M. Rezwan Khan, Mohammad N. Patwary, ‘Technical appraisal of solar home systems in Bangladesh: A field investigation’, Renewable Energy (Elsevier), Vol. 36, Issue 2, Feb. 2011, pp 772-778

Conferences/workshops/symposiums

C66. Shyam Bharadwaj, Cheng Liu, Craig Moe, James Grandusky, Akira Yoshikawa, Jumpei Kasai, SM Islam, Vladimir Protasenko, Leo Schowalter, Jing Zhang, Debdeep Jena and Huili Xing, ‘Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs’, CSW, MA, USA, 2018.

C65. Jimy Encomendero, Rusen Yan, Amit Verma, SM Islam, Vladimir Protasenko, Sergei Rouvimov, Patrick Fay, Debdeep Jena and Huili Xing, ‘Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures’, CSW, MA, USA, 2018.

C64. Reet Chaudhuri, Samuel Bader, Austin Hickman, SM Islam, Huili (Grace) Xing and Debdeep Jena, ‘Molecular Beam Epitaxy of High Mobility AlN/GaN/AlN Quantum Well FET Structures on 6H-SiC, IWPSD, India, 2017.

C63. Kevin Lee, SM Islam, Shyam Bharadwaj, Vineeta Muthuraj, Austin Hickman, Huili (Grace) Xing and Debdeep Jena, ‘Electrical Characterization of High Al-content AlGaN Hole Injection Layers for Deep UV LEDs’, IWUMD, Japan, 2017.

C62. SM Islam, K. Lee, K. Nomoto, H. G. Xing, and D. Jena, ‘Polarization induced 2D hole gas in MBE grown InGaN/GaN hetero-structure’, NAMBE, USA, 2017.

C61. K. Lee, SM Islam, S. Bharadwaj, D. Jena and H. G. Xing, ‘MBE-grown high temperature AlN epitaxy on single crystal AlN substrate for deep UV photonics’, ISSLED, Canada, 2017.

C60. S. Bharadwaj, SM Islam, K. Lee, V. Protasenko, H. G. Xing, and D. Jena, ‘245nm electroluminescence from an MBE grown GaN/AlN deep UV LED on a bulk AlN substrate’, ISSLED, Canada, 2017.

C59. S. Bharadwaj, SM Islam, K. Lee, V. Protasenko, H. G. Xing, and D. Jena, ‘245nm GaN/AlN deep UV LED grown by MBE on bulk AlN substrates’, ICNS, France, 2017.

C58. J. Encomendero, F. A. Faria, SM Islam, V. Protasenko, S. Rouvimov, P. Fay, D. Jena, and Huili (Grace) Xing, ‘Impact-ionization induced UV-Vis electroluminescence in unipolar GaN/AlN resonant tunneling diodes’, EMC, USA, 2017.

C57. R. Chaudhuri, SM Islam, S. Bader, A. Hickman, S. Bharadwaj, Huili (Grace) Xing, and Debdeep Jena, ‘GaN/AlN Quantum Well FETs on AlN/SiC platform using high temperature MBE growth’, EMC, USA, 2017.

C56. S. Bharadwaj, SM Islam, Kevin Lee, Huili (Grace) Xing, and Debdeep Jena, ‘Electrical characterization of polarization doped Al-rich n-AlGaN for deep UV LEDs’, EMC, USA, 2017.

C55. S. Bharadwaj, S. M. Islam, K. Nomoto, Huili (Grace) Xing, and Debdeep Jena, ‘Low resistivity high Aluminum content n-AlGaN cladding layer for usi in deep UV LEDs’, CSW, France, 2017.

C54. S. Bharadwaj, Kevin Lee, SM Islam, V. Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘Tunnel-Junction p-Contact Sub-250 nm Deep-UV LEDs’, CLEO, USA, 2017.

C53. Cheng Liu, Y. K. Ooi, S.M. Islam, H. G. Xing, D. Jena, and Jing Zhang, ‘246 nm AlN-delta-GaN Quantum Well Ultraviolet Light-Emitting Diode’, CLEO, USA, 2017.

C52. Cheng Liu, Y. K. Ooi, S.M. Islam, H. G. Xing, D. Jena, and Jing Zhang, ‘Dominant Transverse-Electric Polarized Emission from 298 nm MBE-Grown AlN-delta-GaN quantum well Ultraviolet Light-Emitting Diodes’, SPIE OPTO, USA, 2017.

C51. P. Fay, W. Li, L. Cao, K. Pourang, SM Islam, C. Lund, S. Sharmin, H. Ilatikhameneh, T. Ameen, J. Huang, R. Rahman, D. Jena, S. Keller, G. Klimeck, ‘Novel III-N heterostructure devices for low-power logic and more’, IEEE-NANO, USA, 2016.

C50. SM Islam, K. Nomoto, V. Protasenko, S. Bharadwaj, Huili (Grace) Xing, and Debdeep Jena, ‘Magnesium incorporation and carrier transport in polarization doped Al-rich p-AlGaN layers for deep UV photonics’, IWN, USA, 2016.

C49. J. Encomendero, SM Islam, V. Protasenko, E. Brown, P. Fay, D. Jena, and Huili (Grace) Xing, ‘Dependence of resonant tunneling current on barrier thickness in GaN/AlN RTDs’, IWN, USA, 2016.

C48. Nicholas Tanen, A. Verma, SM Islam, L. Zhang, and Debdeep Jena, ‘MBE Growth and Characterization of AlN Thin Films on bulk (-201) β-Ga2O3 Substrates’, NAMBE, USA, 2016.

C47. J. Encomendero, SM Islam, V. Protasenko, E. Brown, P. Fay, D. Jena, and Huili (Grace) Xing, ‘Dependence of resonant bias on well width in GaN/AlN RTDs’, NAMBE, USA, 2016.

C46. SM Islam, Kevin Lee, V. Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘MBE Grown Deep UV LEDs on Bulk AlN Crystals’, NAMBE, USA, 2016.

C45. SM Islam, Shyam Bharadwaj, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘Carrier Transport in MBE-grown Polarization-Doped n-AlGaN Graded and SPSL Layers for Deep UV Photonics’, NAMBE, USA, 2016.

C44. Debdeep Jena, SM Islam, Jimy Encomendero, Huili Xing, and Patrick Fay, ‘MBE Growth and Analysis of Tunneling Nitride Heterostructure Devices’, Muri review, IN, USA, 2016.

C43. J. Encomendero, Faiza A. Faria, SM Islam, V. Protasenko, P. Fay, D. Jena, and Huili (Grace) Xing, ‘Repeatable room temperature NDR in GaN RTDs’, LEC, USA, 2016.

C42. SM Islam, Kazuki Nomoto, Bo Song, Huili (Grace) Xing, and Debdeep Jena, ‘Towards AlN/SiC platform high performance GaN QW HEMT’, LEC, USA, 2016.

C41. SM Islam, V. Protasenko, K. Lee, Huili G. Xing, and Debdeep Jena, ‘Deep UV photonic devices with extreme AlN/GaN quantum-confined active regions, IWUMD, Japan, 2016.

C40. SM Islam, Kazuki Nomoto, Huili (Grace) Xing, and Debdeep Jena, ‘Incorporation of Silicon in Al-rich AlxGa1-xN (x>0.7) by MBE’, MBE, France, 2016.

C39. SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘First observation of repeatable NDR in deep-UV LEDs’, ICPS, China, 2016.

C38. Wenjun Li, Kasra Pourang, SM Islam, Debdeep Jena, and Patrick Fay, ‘GaN Nanowire MISFETs for Low-Power Applications’, CSManTech, Florida, USA, 2016.

C37. Debdeep Jena, SM Islam, Jimy Encomendero, Huili (Grace) Xing, and Patrick Fay, ‘New Nitride Tunneling Structures for THz Devices’, Muri review, Notre Dame, IN, USA, 2016.

C36. SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘Use of Bulk AlN Substrates For Efficiency Enhancement For Deep-UV Photonic Devices’, EMC, Newark, Delaware, USA, 2016.

C35. SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘250 nm Deep UV LED Using GaN/AlN Heterostructures On Bulk AlN Substrates’, CLEO, San Jose, California, USA, 2016.

C34. Debdeep Jena, SM Islam, Jimy Encomendero, Huili (Grace) Xing, and Patrick Fay ‘MBE grown vertical nitride heterostructures for hot carrier and tunneling devices’, Muri review, Columbus, Ohio, USA, 2015.

C33. SM Islam, V. Protasenko, S. Rouvimov, Huili (Grace) Xing and Debdeep Jena ‘Optimization of growth parameters for realization of ultra-thin GaN/AlN quantum structures for deep UV photonics’, NAMBE, Mexico, 2015.

C32. SM Islam, V. Protasenko, S. Rouvimov, Huili (Grace) Xing and Debdeep Jena ‘GaN/AlN short period superlattice grown on bulk AlN using plasma assisted molecular beam epitaxy for deep UV photonics’, NAMBE, Mexico, 2015.

C31. SM Islam, V. Protasenko, Sergei Rouvimov, Huili (Grace) Xing and Debdeep Jena ‘Impact of buffer layers for growth of thick InN films’, ISGN, Hamamatsu, Japan, 2015.

C30. SM Islam, V. Protasenko, S. Rouvimov, Huili (Grace) Xing and Debdeep Jena ‘Sub-230 nm deep UV emission from GaN quantum dots grown in modified Stranski-Krastanov mode’, ISGN, Hamamatsu, Japan, 2015.

C29. SM Islam, Vladimir Protasenko, Sergei Rouvimov, Jai Verma, Huili (Grace) Xing and Debdeep Jena ‘Tunable deep UV LEDs with GaN/AlN quantum structures using polarization-induced doping’, ICNS, Beijing, China, 2015.

C28. SM Islam, Vladimir Protasenko, Jai Verma, Huili (Grace) Xing and Debdeep Jena ‘Deep-UV LEDs at cryogenic temperatures using polarization induced doping’, 7th Annual Research Symposium, Notre Dame, IN, USA, 2015 (2nd place).

C27. Kaijun Feng, William Streyer, S.M. Islam, Jai Verma, Debdeep Jena, Daniel Wasserman and Anthony J. Hoffman ‘Localized Surface Phonon Polariton Resonators in GaN’, EMC, Columbus, Ohio, USA, 2015.

C26. Sergei Rouvimov, S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing and Debdeep Jena ‘TEM Analysis of Structure and Compositional Fluctuations in MBE Grown AlGaN Structures for Deep-UV Photonics’, EMC, Columbus, Ohio, USA, 2015.

C25. SM M. Islam, Vladimir Protasenko, Debdeep Jena, and Huili (Grace) Xing ‘Evolution of Emission Energy and Strain of GaN Quantum Structures Buried between AlN Barriers for Deep UV LEDs’, EMC, Columbus, Ohio, USA, 2015.

C24. Kaijun Feng, William Streyer, S.M. Islam, Jai Verma, Debdeep Jena, Daniel Wasserman, and Anthony J. Hoffman ‘Localized Surface Phonon Polariton Resonators in GaN’, CLEO, San Jose, CA, USA, 2015.

C23. S.M. Islam, Vladimir Protasenko, Jai Verma, Huili (Grace) Xing, and Debdeep Jena ‘MBE Growth of GaN/AlN Quantum Dots for Sub 250 nm Deep-UV LEDs’, WOCSEMMAD, Charleston, SC, USA, 2015.

C22. S.M. Islam, Jai Verma, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena ‘Deep UV LEDs with GaN/AlN Heterostructures’, IEEE-EDS Annual Mini Symposium, Notre Dame, IN, USA, 2014 (2nd place).

C21. Vladimir Protasenko, S.M. Islam, Jai Verma, Sergei Rouvimov, and Debdeep Jena ‘230-270 nm GaN/AlN Quantum well and Dot LEDs grown by MBE’, ISSLED, Kaohsiung City, Taiwan, USA, 2014.

C20. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘PAMBE Growth and Characterization of High Efficiency Ultrathin GaN/AlN Quantum Structures for Deep-UV Optoelectronics’, LEC, Ithaca, NY, USA, 2014.

C19. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Use of Graded GaxIn1-xN as a Buffer Layer for PAMBE Growth of Thick InN’, MBE, Flagstaff, Arizona, USA, 2014.

C18. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Photoluminescence Study of GaN/AlN Heterostructures for Deep-UV Optoelectronic Devices’, MBE, Flagstaff, Arizona, USA, 2014.

C17. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Anthony Hoffman, Debdeep Jena, and Jai Verma, ‘Tunnel Injection Deep UV-LEDs incorporating GaN/AlN Quantum Structures’, IEEE-EDS Mini Symposium, Notre Dame, IN, USA, 2014.

C16. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Towards efficient 220nm-270nm deep UV emission from GaN/AlN Quantum structures’, EMC, California, USA, 2014.

C15. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Temperature Dependence of Sub-220nm Emission from GaN/AlN Quantum Structures by Plasma Assisted Molecular Beam Epitaxy’, CLEO, California, USA, 2014.

C14. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘PAMBE Growth of InN on GaN Using Graded GaxIn1-xN as a buffer layer’, ISGN, Atlanta, USA, 2014.

C13. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Efficiency enhancement for 220-270nm deep UV emission from GaN/AlN Quantum structures’, ISGN, Atlanta, USA, 2014.

C12. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Sub-220 nm Emission from GaN/AlN Quantum Structures by Plasma Assisted Molecular Beam Epitaxy’, ISCS, France, 2014.

C11. Jai Verma, Vladimir Protasenko, S.M. Islam, Huili (Grace) Xing and Debdeep Jena, ‘Boost in deep-UV electroluminescence from tunnel-Injection GaN/AlN quantum dot LEDs by polarization-induced doping’, SPIE-OPTO, California, USA, 2014.

C10. J. Verma, V. Protasenko, S. M. Islam, Grace Xing, and Debdeep Jena, ‘Polarization Doped Tunnel Injection GaN/AlN Quantum Dot UV LED’, IWPSD, Noida, India, 2013.

C9. Jai Verma, Vladimir Protasenko, S.M. Islam, Huili (Grace) Xing and Debdeep Jena, ‘Deep UV 250 nm Emission from Tunnel Injection GaN/AlN QD LED Incorporating Graded p-AlGaN Grown by Plasma-Assisted Molecular Beam Epitaxy’, TEM Symposium, Notre Dame, IN, USA, 2013.

C8. Jai Verma, S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing and Debdeep Jena, ‘Deep UV 250 nm Emission from Tunnel Injection GaN/AlN QD LED Incorporating Graded p-AlGaN Grown by Plasma-Assisted Molecular Beam Epitaxy’, ICNS, Washington, USA, 2013.

C7. Jai Verma, S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing and Debdeep Jena, ‘Boost in Deep-UV Electroluminescence from Tunnel-Injection GaN/AlN Quantum Dot LEDs by Polarization-induced Doping’, NAMBE, Canada, 2013.

C6. S. M. Moududul Islam, M. I. B. Chowdhury, Yeasir Arafat and M. Ziaur Rahman Khan, ‘Base Tranist Time of a Heterojunction Bipolar Transistor with Guassian Doped Base Under High-Level of Injection’, 2012 ICDCS, Tamilnadu, India, March 2012.

C5. S. M. Moududul Islam, Yeasir Arafat, Iqbal Bahar Chowdhury, M. Ziaur Rahman Khan and M. M. Shahidul Hassan, “Base Tranist Time of a Heterojunction Bipolar Transistor with Guassian Doped Base”, 6th ICECE, Dhaka, Bangladesh, December 2010.

C4. Shahriar A. Chowdhury, S. M. Raiyan Kabir, S. M. Moududul Islam, ‘Technical Appraisal of Solar Home System Equipments in Bangladesh’, 1st ICDRET, Dhaka, Bangladesh, December 2009.

C3. Shahriar A. Chowdhury, S. M. Raiyan Kabir, S. M. Moududul Islam, A.T.M. Golam Sarwar, Radwanul Hasan Siddique, ‘Performance of Solar Home Systems in Rural Bangladesh’, 1st ICDRET, Dhaka, Bangladesh, December 2009.

C2. Shahriar A. Chowdhury, S. M. Raiyan Kabir, S. M. Moududul Islam, Shakila Aziz, Monjur Mourshed, Hans-Gerhard Holtorf, Konrad Blum, ‘Technical Issues of Solar Home Systems in Rural Bangladesh, A Post-installation Survey’, Symposium, Small PV-Applications, Rural Electrification and Commercial Use, Ulm, Germany, May 2009.

C1. S. M. Moududul Islam, L. Mohammad, E. B. Quddus, M. Abul Khayer, M. Q. Huda and A. Haque, ‘Size Dependence of Quantized Energy Levels in Quantum Dash Structures’, 4th ICECE, Dhaka, Bangladesh, December 2006.

Posters

P17. Austin Hickman, Samuel Bader, Reet Chaudhuri, Kazuki Nomoto, SM Islam, Huili Xing and Debdeep Jena, ‘High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN’, CSW, MA, USA, 2018.

P16. SM Islam, J. Encomendero, V. Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘Negative differential resistance in deep-ultra violet light emitting diodes: a route to novel photonic devices, IWPSD, India, 2017.

P15. O. Koksal, SM Islam, T. Wei, Huili (Grace) Xing, Debdeep Jena, and F. Rana, ‘Two-Pulse Photoluminescence Correlation Technique for Studying Ultrafast Carrier Dynamics in Deep-UV Few Monolayer Thick Nitride Quantum Wells’, CLEO, USA, 2017.

P14. SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘MBE Deep-UV LEDs on Bulk AlN’, CSW, Toyama, Japan, 2016.

P13. SM Islam, S. Chandra, V. Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘Deep-UV Photonic Devices using Quantum Dots’, Cornell visitation weekend, Ithaca, NY, USA, 2016.

P12. S.M. Islam, Samira Chandra, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena, ‘Deep UV (UV-C) radiation for next generation medicine and global health’, ADnT Symposium, Notre Dame, IN, USA, 2015.

P11. S. M. Islam, Kasra Pourang, Wenjun Li, Huili (Grace) Xing, Partick Fay and Debdeep Jena, ‘Realization of Polarization Induced Planar InN/GaNTunnel Junctions using MBE’, LEAST review, Notre Dame, IN, USA, 2015.

P10. Kasra Pourang, S.M. Islam, W. Li, S. Rouvimov, P. Fay, Huili (Grace) Xing, and Debdeep Jena, ‘MBE growth of GaN Nanowires’, LEAST review, Notre Dame, IN, USA, 2015.

P9. Wenjun Li, Cory Lund, Kasra Pourang, Xiaodong Yan, S. M. Moududul Islam, Debdeep Jena, Stacia Keller and Patrick Fay, ‘Toward III-N TFETs: Tunneling in Nitrides and Process Development’, LEAST review, Notre Dame, IN, USA, 2015.

P8. S.M. Islam, V. Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Efficiency Enhancement for 220-270nm Deep UV Emission from Ultra-thin GaN/AlN Quantum Structures’, Midwest Imaging and Microanalysis Workshop, Notre Dame, IN, USA, 2014.

P7. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Deep-UV Light-Emitting Diodes with Enhanced Efficiency for Bio-Sensing and Sterilization Units’, ADnT Symposium, Notre Dame, IN, USA, 2014.

P6. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Towards Efficient 220-270nm Deep-UV Light-Emitting Diodes: Use in Portable Bio-Sensing and Sterilization Units’, 6th Annual Research Symposium, Notre Dame, IN, USA, 2014

P5. S.M. Islam, V. Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘PAMBE Growth of InN on GaN Using Graded GaxIn1-xN as a buffer layer’, IWN, Poland, 2014.

P4. S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, Photoluminescence study of GaN/AlN Quantum Structures grown by Plasma Assisted Molecular Beam Epitaxy, IWN, Poland, 2014.

P3. S.M. Islam, V. Protasenko, Huili (Grace) Xing, Debdeep Jena, and Jai Verma, ‘Pushing the limits for deep UV emission from GaN/AlN Quantum Structures’, ICPS, USA, 2014.

P2. S.M. Islam, J. Verma, Vladimir Protasenko, Grace Xing, Robert Nerenberg and Debdeep Jena, ‘GaN Quantum Dot Deep-Ultraviolet Light-Emitting Diodes for Low-Power Lightweight Bio-sensing and Sterilization Units’, ADnT Symposium, Notre Dame, USA, 2013.

P1. Jai Verma, S.M. Islam, Vladimir Protasenko, Huili (Grace) Xing and Debdeep Jena, ‘Deep Ultra-Violet Emission from GaN/AlN matrix grown by Plasma-Assisted Molecular Beam Epitaxy’, M&M, Indiana, USA, 2013.