• *Corresponding authorship

Google Scholar

<2020>

• S.- H. Kim, Y. Kim, Y. Ban, M. Pantouvaki, J. Van. Campenhout, "Simulation study of a monolithic III-V/Si V-groove carrier depletion optical phase shifter", IEEE Journal of Quantum Electronics 56, p. 6300208 (2020)
• S. -K. Kim, D. -M. Geum (co-first), H. -R. Lim, J. -H. Han, H. -J. Kim, Y. -J. Jeong, S.- H. Kim*, "Photo-responsible Synapse using Ge Synaptic Transistors and GaAs Photodetectors", IEEE Electron Device Letters, in press (selected as Editors' Picks)
• D. -M. Geum, S. -K. Kim, S. Lee, D. Lim, H. -J. Kim, C. -H. Choi, S.- H. Kim*, "Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs using Sequential Fabrication Process", IEEE Electron Device Letters 41, p. 433 (2020) (selected as Editors' Picks)
• S. -K. Kim, Y. -J. Jeong, P. Bidenko, H. -R. Lim, Y. -R. Jeon, H. Kim, Y. -J. Lee, D. -M. Geum, J. -H. Han, C. Choi, H. -J. Kim, S.- H. Kim*, "3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks", ACS Applied Materials and Interfaces 12, p. 7322 (2020)

<2019>

• D. -M. Geum, S. -K. Kim, C. -M. Kang, S. -H. Moon, J. Kyhm, J. -H. Han, D. -S. Lee, S.- H. Kim*, "Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation", Nanoscale 11, p. 23139 (2019) (selected as an outside front cover)
• D. -M. Geum, S. -H. Kim (co-first), S. -K. Kim, S. -S. Kang, J. -H. Kyhm, J. -D. Song, W. J. Choi*, and E. Yoon*, "Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems", Scientific Reports 9, 18661 (2019)
• S. Lee, S. -K. Kim, J. -H. Han, J. D. Song, D. -H. Jun, S. -H. Kim*, "Epitaxial Lift-off Technology for Large Size III-V-On-Insulator Substrate", IEEE Electron Device Letters 40, p. 1732 (2019)
• S. -K. Kim, D. -M. Geum, H. -R. Lim, H. Kim, J. -H. Han, D. K. Hwang, J. D. Song, H. -J. Kim, S.- H. Kim*, "Improved Characteristics of MOS Interface between In0.53Ga0.47As and Insulator by H2 Annealing with Pt Gate Electrode ", Applied Physics Letters 115, 143502 (2019)
• S. Kang, D. -M. Geum, K. Kwak, J. -H. Kang, C. -H. Shim, H. Y. Hyun, S. -H. Kim, W. J. Choi, S. -H. Choi, M. -C. Park*, J. D. Song*, "InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K", Scientific Reports 9, 12875 (2019)
• H. -R. Lim, S. -K. Kim, J. -H. Han, H. -S. Kim, D. -M. Geum, Y. -J. Lee, B. -K. Ju, H. -J. Kim, S.- H. Kim*, "Impact of bottom-gate biasing on Implant-free Junctionless Ge-on-Insulator n-MOSFETs", IEEE Electron Device Letters 40, p. 1362 (2019)
• S.- H. Kim*, S. –K. Kim, S. –H. Shin, J. –H. Han, D. –M. Geum, J. –P. Shim, S. Lee, H. –S. Kim, G. Ju, J. –D. Song, M. A. Alam, H. –J. Kim, "Highly-stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for Monolithic 3D Integration of InGaAs MOSFETs", IEEE Journal of the Electron Device Society 7, p. 869 (2019)
• [Review paper] S. –H. Kim*, J. –H. Han, W. J. Choi, J. D. Song, H. -J. Kim : “Functionalized bonding materials and interfaces for heterogeneously layer-stacked applications”, Journal of the Korean physical society 74, p. 82 (2019)

<2018>

• C. -M. Kang, J. -Y. Lee, D. -J. Kong, J. -P. Shim, S. -H. Kim, S. -H. Mun, S. -Y. Choi, M. -D. Park, J. Lee, and D. -S. Lee : "Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding", ACS Photonics 5, p. 4413 (2018)
• I. –P. Ryo, S. –H. Kim (co-first), D. -M. Geum, W. Lu, Y. –H. Song*, Jesus A. del Alamo, and J. –D. Song* : “High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer”, Applied Physics Letters 113, 093501 (2018)
• P. Bidenko, S. Lee, J. -H. Han, J. -D. Song, S. -H. Kim* : "Simulation Study on the Design of Sub-kT/q Non-Hysteretic Negative Capacitance FET Using Capacitance Matching", IEEE Journal of the Electron Device Society 6, p. 910 (2018)
• S. –H. Kim*, S. –K. Kim, J. –P. Shim, D. –M. Geum, G. Ju, H. –S. Kim, H. –J. Lim, H. –R. Lim, J. –H. Han, S. Lee, H. –S. Kim, P. Bidenko, C. –M. Kang, D. –S. Lee, J. –D. Song, W. J. Choi, and H. –J. Kim : “Heterogeneous Integration toward Monolithic 3D Chip enabled by III-V and Ge Materials”, IEEE Journal of the Electron Device Society 6, p. 579 (2018)
• S. -K. Kim, J. –P. Shim, D. –M. Geum, C. –Z. Kim, H. –S. Kim, J. D. Song, S. –J. Choi, D. H. Kim, W. J. Choi, H. –J. Kim, D. -M. Kim*, and S. –H. Kim* : “Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Re-usability toward Monolithic 3D Integration with In0.53Ga0.47As channel”, IEEE Transactions on Electron Device 65, p. 1862 (2018)
• D. –M. Geum, S. –H. Kim (co-first), S. –S. Kang, H. –S. Kim, H. Park, I. –P. Rho, S. –Y. Ahn, J. –D. Song, W. J. Choi, and E. Yoon, “Room Temperature Operation of Mid-infrared InAs0.81Sb0.19 based Photovoltaic Detectors with an In0.2Al0.8Sb Barrier Layer grown on GaAs Substrate”, Optics Express 26, p. 6249 (2018)
• G. Ju, H. –S. Kim (co-first), J. –P. Shim, S. –K. Kim, B. –H. Lee, S. O. Won, S. –H. Kim, and H. –J. Kim* : “Anisotropic Surface Morphology in a Tensile-strained InAlAs layer grown on InP(100) substrates”, Thin Solid Film 649, p. 38 (2018)
• J. –P. Shim, H. –S. Kim (co-first), G. Ju, H. –R. Lim, S. –K. Kim, J. –H. Han, H. –J. Kim*, and S. –H. Kim*, “Low Temperature Material Stacking of Ultra-Thin Body Ge (110)-on-insulator Structure via Wafer Bonding and Epitaxial Lift-off from III-V Templates”, IEEE Transactions on Electron Device 65, p. 1253 (2018)
• S. –H. Kim*, J. –H. Han (co-first), J. –P. Shim, H. –J. Kim, and W. J. Choi : “Verification of Ge-on-insulator structure for Mid-infrared photonics platform”, Optical Materials Express 8, p. 440 (2018)
• J. –P. Shim, S. -K. Kim, H. -S. Kim, G. W. Ju, H. -J. Lim, S. -H. Kim, H. -J. Kim* : “Double-gated Ultra-thin-body GaAs-on-insulator p-FETs on Si”, APL Materials 6, 016103 (2018)

<2017>

• C. -M. Kang, S.-J. Kang, S. -H. Mun, S. -Y. Choi, J. -H. Min, S. -H. Kim, J. -P. Shim*, and D. -S. Lee* : “Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission”, Scientific Reports 7, 10333 (2017)
• H. -S. Kim, S. -Y. Ahn, S. -H. Kim, G. -H. Ryu, J. -H. Kyhm, K. -W. Lee, J. -H. Park*, W. -J. Choi* : “InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off”, Optics Express25, p. 17562 (2017)
• S. –K. Kim, D. –M. Geum, J. –P. Shim, J. –H. Han, C. –Z. Kim, H. –J. Kim, J. D. Song, W. J. Choi, S. –J. Choi, D. H. Kim, D. M. Kim*, and S. –H. Kim* : “Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques”, IEEE Transactions on Electron Device 64, p. 3601 (2017)
• H. –J. Lee, D. –H. Jung, T. –H. Kil, S. –H. Kim, K. –S. Lee, S. –H. Baek, W. J. Choi*, and J. –M. Baik* : “Mechanically robust stretchable solar absorbers with submicron-thick multilayer sheets for wearable and energy applications”, ACS Applied Materials & Interfaces 9, p. 18061 (2017)
• T. –H. Kil, S. –H. Kim (co-first), D. –H. Jung, D. –M. Geum, S. Lee, S. –J. Jung, S. Kim, C. Park, J. –S. Kim, J. –M. Baik, K. –S. Lee, C. –Z. Kim, W. J. Choi, and S. –H. Baek : “A high-efficient, concentrating-photovoltaic/thermoelectric hybrid generator”, Nano Energy 37, p. 242 (2017)
• S. –H. Kim*, D. –M. Geum, M. –Su. Park, H. –S. Kim, J. –D. Song, and W. J. Choi : “Fabrication and Characterization of High-quality GaAs photodetector arrays on Si”, Applied Physics Letters 110, 153505 (2017)
• D. -M. Geum, M.-S. Park, C. –Z. Kim, S. –H. Kim*, W. J. Choi*, and E. Yoon : “Heterogeneously Integrated High Performance GaAs Single Junction Solar Cells on Copper”, Journal of the Korean physical society 70, p. 693 (2017)
• C. –M. Kang, D. –J. Kong, J. –P. Shim, S. –H. Kim, S. –B. Choi, J. –Y. Lee, J. –H. Min, D. –J. Seo, S. –Y. Choi, and D. –S. Lee* : “Fabrication of a vertically-staked passive-matrix micro-LED array structure for a dual color display”, Optics Express 25 (3), p. 2489-2495, 2017
• S. –K. Kim, D. –M. Geum, J. –P. Shim, C. –Z. Kim, H. –J. Kim, W. J. Choi, S. –J. Choi, D. H. Kim, S. –H. Kim*, and D. M. Kim* : “Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density”, Applied Physics Letters 110 (5), 2017
• I. –P. Ryo, S. –H. Kim (co-first), Y. –H. Song*, and J. –D. Song* : “Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors”, Current Applied Physics 17, p. 417, 2017

<2016>

• N. Taoka*, M. Yokoyama, S. –H. Kim, R. Suzuki, R. Iida, M. Takenaka, and S. Takagi : “Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors”, Applied Physics Express 9, 111202, 2016
• S. –H. Kim*, D. –M. Geum, S. –K. Kim, H. –J. Kim, J. –D. Song, and W. J. Choi : “Low subthreshold-slope Double-gate GaAs Field-Effect-Transistors on Si”, IEEE Electron Device Letters 37, p. 1261 (2016)
• S. Takagi*, M. Noguchi, M. Kim, S. –H. Kim, C. –Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, and M. Takenaka : “III-V/Ge MOS device technologies for low power integrated systems”, Solid State Electronics 125, p. 82, 2016
• Y. S. Yun, S. –H. Kim, H. –Y. Ryu, M. –S. Park, H. Jang, J. H. Song, W. C. Lim, Y. J. Chang*, and W. J. Choi* : “Proton irradiation-induced intermixing in InGaAs/GaAs quantum well for non-absorbing mirror”, Current Applied Physics 16, p. 1005, 2016
• S. –K. Kim, J. Lee, D. –M. Geum, M. –S. Park, W. J. Choi, S. –J. Choi, D. H. Kim, S. –H. Kim*, and D. M. Kim* : “Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs”, Solid State Electronics 112, p. 8, 2016
• H. S. Kim, M. S. Park, S. H. Kim, S. I. Park, J. D. Song, S. H. Kim, W. J. Choi*, and J. H. Park* : “Indium-tin-oxide/GaAs schottky barrier solar cells with embedded InAs Quantum dots”, Thin Solid Films 604, p, 81, 2016
• D. -M. Geum, M.-S. Park, J. –Y. Lim, H. –D. Yang, J. D. Song, C. –Z. Kim, E. Yoon, S. –H. Kim*, and W. J. Choi : “Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications”, Scientific reports 6, 20610, 2016
• H. –J. Lee, J. –W. Lee, H. –J. Kim, D. –H. Jung, K. –S. Lee, S. –H. Kim, D. –M. Geum, C. Z. Kim, W. J. Choi*, and J. M. Baik* : “Optical Design of ZnO-based Antireflective Layers for Enhanced GaAs Solar Cell Performance”, Physical Chemistry Chemical Physics 18, p. 2906, 2016

<2015>

• M. -S. Park, D. -M. Geum, J. H. Kyhm, J. D. Song, S. -H. Kim*, and W. J. Choi* : “InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off”, Optics Express 23, p. 26888, 2015
• H. –S. Kim, M. –S. Park, S. –H. Kim, S. –H. Kim, J. D. Song, Y. J. Lee, W. J. Choi*, and J. H. Park* : “Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment”, Journal of Vacuum Science & Technology B 33(4), 041401, 2015
• M. Noguchi*, S. –H. Kim, M. Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi : “High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions”, Journal of Applied Physics, Vol 118, 045712, 2015
• S. -H. Kim, D. -M. Geum, M.-S. Park, C. –Z. Kim, and W. J. Choi* : “GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding”, Solar Energy Materials & Solar Cells, Vol 141, p. 372, 2015
• [Review paper] S. Takagi*, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi, and M. Takenaka : “III–V/Ge channel MOS device technologies in nano CMOS era”, Japanese Journal of Applied Physics, Vol 54, 06FA01, 2015
• S. -H. Kim, M.-S. Park, D. -M. Geum, H. Kim, G. Ryu, H. -D. Yang, J. D. Song, C. Z. Kim, W. J. Choi* : “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate”, Current Applied Physics 15, p. 40, 2015
• S. -H. Kim*, D. -M. Geum, M.-S. Park, and W. J. Choi : “In0.53Ga0.47As-On-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors Utilizing Y2O3 Buried Oxide”, IEEE Electron Device Letters, Vol 36, p. 451, 2015

<2014>

• S. H. Kim*, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka and S. Takagi : “Direct Wafer Bonding Technology for Large-scale InGaAs-On-Insulator Transistors”, Applied Physics Letters, Vol 104, 043504, 2014
• S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, Vol 104, 263507, 2014
• S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “High Performance Tri-gate Extremely-thin-Body InAs-on-Insulator MOSFETs with high short channel effect immunity and Vth tunability”, IEEE Transactions on electron device, Vol 61, p. 1354, 2014
• S. H. Kim*, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation”, Applied Physics Letters, Vol 104, 113509, 2014
• M. Yokoyama*, K. Nishi, S. -H. Kim, H. Yokoyama, M. Takenaka and S. Takagi, “Self-aligned Ni–GaSb source/drain junctions for GaSb p-channel metal-oxide- semiconductor field-effect transistors”, Applied Physics Letters, Vol 104, 093509, 2014
• K. Nishi*, M. Yokoyama, S. -H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi, “Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys”, Journal of Applied Physics, Vol. 115, 034515, 2014
• M.-S. Kim*, Y.-H Kim, M. Yokoyama, R. Nakane, S.-H. Kim, M. Takenaka and S. Takagi, “Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-junctions for Low Power Applications”, Thin Solid Films, Vol 557, p. 298, 2014

<2013>

• N. Taoka*, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, “Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistors”, IEEE Transactions on device and materials reliability, Vol 13, p. 456, 2013
• S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility”, Journal of Applied Physics 114, 164512, 2013
• N. Taoka*, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, “Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, Vol 103, 143509, 2013
• S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “High Performance InAs-On-Insulator nMOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology”, IEEE Transactions on electron device, Vol 60, p. 3342, 2013
• M. Yokoyama*, R. Iida, Y. Ikku, S.-H. Lee, S.-H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi, “Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding”, Semiconductor Science and Technology 28, 094009, 2013
• S. -H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Sub-60 nm Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and its scalability”, IEEE Transactions on electron device, Vol 60, p. 2512, 2013
• S. -H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S.-H. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering”, IEEE Transactions on Nanotechnology, Vol 12, p. 621, 2013
• C.-Y. Chang*, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi : “Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks”, Microelectronic Engineering, Vol 109, p. 28, 2013
• S. Takagi*, S.-H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata and M. Takenaka : “High Mobility CMOS Technologies using III-V/Ge Channels on Si platform”, Solid State Electronics 88, p. 2, 2013

<2012>

• S. Takagi*, N. Taoka, R. Suzuki, M. Yokoyama, S.-H. Kim, and M. Takenaka : “InGaAs MOS gate stack formation and the MOS interface properties”, Journal of The Surface Science Society of Japan, Vol 33, No. 11, pp. 628, 2012 (Japanese)
• R. Suzuki*, N. Taoka, M. Yokoyama, S. H. Kim, T. Hoshii, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties”, Journal of Applied Physics, Vol 112, 084103, 2012
• Cezar B. Zota*, S. H. Kim, M. Yokoyama, M. Takenaka, and S. Takagi : “Characterization of Ni–GaSb Alloys Formed by Direct Reaction of Ni with GaSb”, Applied Physics Express, Vol 5, 071201, 2012
• M. Yokoyama*, S.-H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi : “III-V/Ge high mobility channel integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D”, Applied Physics Express, Vol. 5, 076501, 2012
• S. H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain”, Applied Physics Letters, Vol 100, 193510 , 2012
• R. Suzuki*, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxidesemiconductor structure with low interface trap density and low gate leakage current density”, Applied Physics Letters, Vol 100, 132906, 2012
• R. Iida*, S. H. Kim, M. Yokoyama, N. Taoka, S. Lee, M. Takenaka, S. Takagi : “Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors”, Journal of Applied Physics, Vol. 110, 124505, 2011
• S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “In0.53Ga0.47As Metal-oxide-semiconductor Field-effect Transistors with Self-Aligned Metal Source/Drain using Co-InGaAs Alloys”, Applied Physics Letters, Vol 100, 073504, 2012
• S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers”, Applied Physics Express, Vol 5, 014201, 2012

<2011>

• S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain”, Applied Physics Express, Vol 4, 114201, 2011
• S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy”, Applied Physics Letters, Vol 98, 243501, 2011
• M. Yokoyama*, R. Iida, S.-H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi, “Sub-10-nm extremely-thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers”, IEEE Electron Device Letters, Vol 32, No. 9, p. 1218, 2011
• N. Taoka*, M. Yokoyama, S. H. Kim, T. Hoshii, R. Iida, S. Lee, R. Suzuki, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP Interfaces”, Microelectronic Engineering, Vol 88, Issue 7, p. 1087, 2011
• S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : "Self-algined metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy", Applied Physics Express, Vol. 4, 024201, 2011
•