Guide: Dr. Anu Gupta, Assistant Professor, EEE Group, BITS, Pilani
Design Procedure:
Design of the differential pair of Op-Amp was the first step which has been started with plotting of Id/(W/L) vs Vov and Gm/ Id vs Vov graphs for both NMOS and PMOS transistors. The values of current and overdrives are fixed roughly based on the power dissipation and output swing aimed. The W/L values are taken from the graphs and transistors are designed. After a few iterations targeting maximum gain with required f-3dB, the first stage is optimized. Later a similar procedure is followed for the second stage as well. Here R-C compensation is used to decrease the effect of second pole on phase margin. The improvement of phase margin is due to a negative zero introduced in between the two poles.
Note: Click on the figures to enlarge.
Specifications:
Technology node: tsmc 180nm CMOS
VDD 3 V
CL (at the output) 1 pF
Resolution 10(bit)
Dynamic Range 60.2dB
Maximum frequency
of operation (for LSB bit) 200MHz
Settling time (1/2 LSB) 1.17ns
Power dissipation 2.33mW