PUBLICATION

Selected Publications

2018:

[J12] W. Ahn, S. H. Shin, C. Jiang, H. Jiang, M. A. Wahab, and M. A. Alam, “Integrated Modeling of Self-heating of Confined Geometry (FinFET, NWFET, and NSHFET) Transistors and its Implications for the Reliability of Sub-20nm Modern Integrated Circuits,” Microelectronics Reliability, vol. 81, pp. 262-283, 2018. [LINK]

2016:

[C13] M. A. Wahab, S. H. Shin, and M. A. Alam, “Spatio-Temporal Mapping of Device Temperature due to Self-Heating in Sub-22 nm Transistors,” IEEE Int. Reliability Physics Symposium (IRPS), pp. XT.5.1-XT.5.6, Apr 17-21, 2016, Pasadena, CA, USA. [LINK]

2015:

Simulation Tools:

[S2] M. A. Wahab and M. A. Alam, “A Verilog-A Compact Model for Negative Capacitance FET,” NEEDs NanoHUB, 2015. [LINK](Users: 440)

[S1] M. A. Wahab and M. A. Alam, “MATLAB: Negative Capacitance FET,” NEEDs NanoHUB, 2015. [LINK] (Users: 850)

[J11] M. A. Wahab, S. H. Shin, and M. A. Alam, “3D Modeling of Spatio-Temporal Heat-Transport in III-V Gate-All-Around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature,” IEEE Trans. Electron Devices, vol. 62, pp. 3595-3604, 2015. [LINK] [IEEE highlights as Popular Article, Oct 2015]

[J10] S. H. Shin, M. A. Wahab, M. Masuduzzaman, K. Maize, J. J. Gu, M. Si, A. Shakouri, P. D. Ye, and M. A. Alam, “Direct Observation of Self-heating in III-V Gate-All-Around Nanowire MOSFETs,” IEEE Trans. Electron Devices, vol. 62, pp. 3516-3523, 2015. (Special Issue) [LINK]

[J9] X. Xie, M. A. Wahab, Y. Li, A. E. Islam, B. Tomic, J. Huang, B. Burns, E. Seabron, S. N. Dunham, F. Du, J. Lin, W. L. Wilson, J. Song, Y. Huang, M. A. Alam, and J. A. Rogers, “Direct Current Injection and Thermocapillarity for Purification of Aligned Arrays of Single-Walled Carbon Nanotubes,” Journal of Applied Physics, vol. 117, p. 134303, 2015. [LINK] In the News: AIP.org, Phys.org, Science Daily, Nano Werk, EurekAlert, Nanotechnology Now

[C12] S. H. Shin, M. A. Wahab, W. J. Ahn, A. Ziabari, K. Maize, A. Shakouri, and M. A. Alam, “Fundamental trade-off between Short-Channel Control and Hot Carrier Degradation in an ETSOI Technology,” IEEE Int. Electron Devices Meeting (IEDM), pp. 20.3.1-20.3.4, Dec 7-9, 2015, Washington DC, USA. [LINK]

[C11] M. A. Wahab, M. A. Alam, J. J. Gu, S. H. Shin, and P. D. Ye, “Self-consistent Analysis between Electro-thermal Model and Thermo-reflectance Measurement to Estimate Nanowire Temperature in a Multi-nanowires 3D Transistor,” SRC Techcon, Sep 20-22, 2015, Austin Texas, USA.

[C10] M. A. Wahab and M. A. Alam, “Compact Model of Short-Channel Negative Capacitance (NC)- FET with BSIM4/MVS and Landau Theory,” NEEDS Annual Meeting and Workshop, May 11-12, 2015, Cambridge, MA, USA.

[C9] M. A. Alam*, P. Dak*, M. A. Wahab*, and X. Sun*, “Physics-based Compact Models for Insulated-Gate Field-Effect Biosensors, Landau-Transistors, and Thin-Film Solar Cells,” IEEE Custom Integrated Circuits Conference (CICC), pp. 1-8, Sep 28-30, 2015, CA, USA. (*equal contribution) (Invited) [LINK]

2014:

[J8] X. Xie*, S. H. Jin*, M. A. Wahab*, A. E. Islam, C. Zhang, F. Du, E. Seabron, T. Lu, S. N. Dunham, H. I. Cheong, Y.-C. Tu, Z. Guo, H. U. Chung, Y. Li, Y. Liu, J.-H. Lee, J. Song, Y. Huang, M. A. Alam, W. L. Wilson, and J. A. Rogers, ”Microwave Purification of Large-Area Horizontally Aligned Arrays of Single-Walled Carbon Nanotubes”, Nature Communications, 2014. (*equal contribution) [LINK] In the news: Purdue ECE Spotlight

[J7] M. A. Wahab and M. A. Alam, ”Implications of Electrical Crosstalk for High Density Aligned Array of Single-Wall Carbon Nanotubes”, IEEE Trans. Electron Devices, 2014 (Early Access). [LINK] [IEEE highlights as Popular Article, Oct 2014]

[C8] M. A. Wahab and M. A. Alam, ”Electrostatic Cross-Talk to Define the Density Limit of Aligned-Array Phase-Change-Memory with Carbon Nanotube Electrodes.”, 72nd Device Research Conference (DRC), pp. 91-92, June 22-25, 2014, CA, USA. [LINK]

[C7] S. H. Shin, M. Masuduzzaman, M. A. Wahab, K. Maize, J. J. Gu, M. Si, A. Shakouri, P. D. Ye, and M. A. Alam, “Direct Observation of Self-heating in III-V Gate-All-Around Nanowire MOSFETs,” IEEE Int. Electron Devices Meeting (IEDM), pp. 20.3.1-20.3.4, Dec 15-17, 2014, San Francisco CA, USA. [LINK]

[C6] S. H. Shin, M. A. Wahab, M. Masuduzzaman, M. Si, J. J. Gu, P. D. Ye, and M. A. Alam, ”Origin and Implications of Hot Carrier Degradation of Gate-All-Around Nanowire III-V MOSFETs”, IEEE International Reliability Physics Symposium (IRPS), pp. 4A.3.1-4A.3.6, June 1-5, 2014, HI, USA. [LINK]

2013:

[C5] S. H. Shin, M. Masuduzzaman, J. J. Gu, M. A. Wahab, N. Conrad, M. Si, P. D. Ye, and M. A. Alam, ”Impact of Nanowire Variability on Performance and Reliability of Gate-All-Around III-V MOSFETs”, IEEE International Electron Devices Meeting (IEDM), pp. 7.5.1-7.5.4, December 9-11, 2013, Washington DC, USA. [LINK]

[J6] S. H. Jin, S. N. Dunham, J. Song, X. Xie, J. Kim, C. Lu, A. Islam, F. Du, J. Kim, J. Felts, Y. Li, F. Xiong, M. A. Wahab, M. Menon, E. Cho, K. L. Grosse, D. J. Lee, H. U. Chung, E. Pop, M. A. Alam, W. P. King, Y. Huang, and J. A. Rogers, ”Using Nanoscale Thermocapillary Flows to Create Purely Semiconducting Arrays of Single Walled Carbon Nanotubes”, Nature Nanotechnology, vol. 8, no. 5, pp. 347-355, 2013. [LINK] In the News: Nature News and Views, nanotechweb.org, McCORMICK News

[J5] M. A. Wahab*, S. H. Jin*, A. E. Islam, J. Kim, J. Kim, W.-H. Yeo, D. J. Lee, H. U. Chung, J. A. Rogers, and M. A. Alam, ”Electrostatic Dimension of Aligned-Array Carbon Nanotube Field-Effect Transistors”, ACS Nano, vol. 7, no. 2, pp. 1299-1308, 2013. (*equal contribution) [LINK]

2012:

[J4] X. Xie*, A. E. Islam*, M. A. Wahab*, L. Ye, X. Ho, M. A. Alam, and J. A. Rogers, ”Electroluminescence in Aligned-Array Single-Wall Carbon Nanotubes with Asymmetric Contacts”, ACS Nano, vol. 6, no. 9, pp. 7981-7988, 2012. (*equal contribution) [LINK]

2010:

[J3] M. A. Wahab and Q. D. M. Khosru, ”Strain Effects on the Performance of Zero-Schottky-Barrier Double-Walled Carbon Nanotube Transistors”, Journal of Applied Physics, vol. 108, no. 3, pp. 034301(1-8), 2010. [LINK]

(Also appears in Virtual Journal of Nanoscale Science and Technology, Aug 16, 2010)

[J2] M. A. Wahab and K. Alam, ”Performance of Zero-Schottky-Barrier and Doped Contacts Single and Double Walled Carbon Nanotube Transistors”, Japanese Journal of Applied Physics, vol. 49, no. 2, pp. 025101(1-6), 2010. [LINK]

(Also appears in Virtual Journal of Nanoscale Science and Technology, Mar 8, 2010)

[J1] M. A. Wahab and K. Alam, ”Performance Comparison of Zero-Schottky-Barrier and Doped Contacts Carbon Nanotube Transistors with Strain Applied”, Nano-Micro Letters, vol. 2, no. 2, pp. 126-133, 2010. [LINK, Springer]

2009:

[C4] M. A. Wahab, ”Strain Effect on Single and Double Walled Carbon Nanotubes”, Proc. of IEEE International Technical Conference (IEEE TENCON 2009), November 23-26, 2009, Singapore. [LINK]

[C3] M. A. Wahab, ”Strain Effect on Zero-Schottky-Barrier CNTFETs”, Proc. of the 2nd IEEE ED Bangladesh Student Paper Contest, IEEE Electron Devices Society Bangladesh Chapter, December 22, 2009, Bangladesh. (Honorable Mention Award)

2008:

[C2] M. A. Wahab and K. Alam, ”Performance Comparison of Zero-Schottky-Barrier Single and Double Walled Carbon Nanotube Transistors”, Proc. of International Conference on Electrical and Computer Engineering (ICECE 2008), December 20-22, 2008, Dhaka, Bangladesh. [LINK]

[C1] M. A. Wahab, M. Adel Uzzaman, M. S. Hai, M. A. Haque and M. K. Hasan, ”Least-Squares Optimal Variable Step-Size LMS for Nonblind System Identification with Noise”, Proc. of International Conference on Electrical and Computer Engineering (ICECE 2008), December 20-22, 2008, Dhaka, Bangladesh. [LINK]