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Electronic device miniaturization in semiconductors has reached the ultimate limit where the number of electrons present in the device can be tuned at will down to a single electron. These systems have been given the name of quantum dots or artificial atoms since their generic properties are determined by their few-electron configurations much the same as in real atoms. In the figure you can see the top view of a heterostructure where a voltage applied to the metal gates can confine the electrons in the two-dimensional electron gas underneath at will.
Some representative publications:
CORRELATED FEW-ELECTRON STATES IN VERTICAL DOUBLE-QUANTUM-DOT SYSTEMS, Palacios, J. J.; Hawrylak, P., Physical Review B Volume: 51 Issue: 3 Pages: 1769-1777 Published: 1995.
LOW-LYING EXCITATIONS OF QUANTUM HALL DROPLETS, Oaknin, J. H.; Martinmoreno, L.; Palacios, J. J.; et al., Physical Review Letters Volume: 74 Issue: 25 Pages: 5120-5123 Published: 1995.
CAPACITANCE SPECTROSCOPY IN QUANTUM DOTS - ADDITION SPECTRA AND DECREASE OF TUNNELING RATES, Palacios, J. J.; Martinmoreno, L.; Chiappe, G.; et al., Physical Review B Volume: 50 Issue: 8 Pages: 5760-5763 Published: 1994
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