Development of new high-k materials based on the mixed-, doped-, laminated- metal oxide for DRAM capacitor dielectric
Characterization of TiO2, SrTiO3, HfO2, ZrO2, Ta2O5, Nb2O5, Al2O3, and their combination by ALD for capacitor or gate high-k dielectrics
Design and application of ferroelectric thin films
Identification of ferroelectric-phase formation mechanism
Development of ferroelectric ultra-thin film process and MFM capacitor process
Synthesis and characterization of layered two-dimensional materials, including MoS2, WS2, SnSe2, SnS2, and TaS2
Two-dimensional polymorphism growth of metal di- and mono- sulfide systems
Laser spectroscopy on low dimensional materials
Characterization of low-resistivity metallic films (Mo based materials (Mo, MoCx, MoNx) and Ru-based materials (Ru, RuO2) thin films by ALD for Interconnects and DRAM capacitor electrodes
Improvement of electrical properties by optimizing initial growth of metallic films