Development of new high-k materials based on the mixed-, doped-, laminated- metal oxide for DRAM capacitor dielectric

Characterization of TiO2, SrTiO3, HfO2, ZrO2, Ta2O5, Nb2O5, Al2O3, and their combination by ALD for capacitor or gate high-k dielectrics

Design and application of ferroelectric thin films

Identification of ferroelectric-phase formation mechanism

Development of ferroelectric ultra-thin film process and MFM capacitor process

Synthesis and characterization of layered two-dimensional materials, including MoS2, WS2, SnSe2, SnS2, and TaS2

Two-dimensional polymorphism growth of metal di- and mono- sulfide systems

Laser spectroscopy on low dimensional materials

Characterization of low-resistivity metallic films (Mo based materials (Mo, MoCx, MoNx) and Ru-based materials (Ru, RuO2) thin films by ALD for Interconnects and DRAM capacitor electrodes

Improvement of electrical properties by optimizing initial growth of metallic films