Publications

Journals

      15. Mingshan Liu, Yannik Junk, Yi Han, Dong Yang, Jin Hee Bae, Marvin Frauenrath, Jean-Michel Hartmann, Zoran Ikonic, Florian Barwolf, Andreas Mai, Detlev Gruetzmacher, Joachim Knoch, Dan Buca and Qing-Tai Zhao, "Vertical GeSn nanowire MOSFETs for CMOS beyond Silicon," Nature Communication Engineering, 2(7), 2023 (Editors' choice Detail)

       14. Fengben Xi, Yi Han, Mingshan Liu, Jin Hee Bae, Andreas Tiedemann, Detlev Gruetzmacher, and Qing-Tai Zhao, "Artificial synapses based on ferroelectric Schottky barrier field-effect transistors for neuromorphic applications," ACS Materials & Interfaces, 2021(Detail).

       13. Mingshan Liu*, Dong Yang, Alexander Shkurmanov, Jin Hee Bae, Viktoria Schlykow, Jean-Michel Hartmann, Zoran Ikonic, Florian Baerwolf, Ioan Costina, Andreas Mai, Joachim Knoch, Detlev Gruetzmacher, Dan Buca and Qing-Tai Zhao, "Epitaxial GeSn/Ge vertical nanowires for p-type field-effect transistors with enhanced performance," ACS Applied Nano Materials, vol. 4, no. 1, pp. 94-101, 2021 (Detail).

       12. Mingshan Liu*, Florian Lentz, Stefan Trellenkamp, Jean-Michel Hartmann, Joachim Knoch, Detlev Gruetzmacher, Dan Buca and Qing-Tai Zhao, "Diameter scaling of Vertical Ge gate-all-around nanowire pMOSFETs," IEEE Transcations on Electron Devices, vol. 67, no. 7, pp. 2988-2994, 2020 (Detail).

       11. Qinghua Han, Mingshan Liu, Babak Kazemi Esfeh, Jin Hee Bae, Jean-Pierre Raskin, Qing-Tai Zhao, "Impact of gate to source/drain alignment on the static and RF performance of junctionless Si nanowire nMOSFETs," Solid-State Electronics, vol. 169, pp. 107817, 2020.

       10. Mingshan Liu*, Stefan Scholz, Alexander Hardtdegen, Jin Hee Bae, Jean-Michel Hartmann, Joachim Knoch, Detlev Gruetzmacher, Dan Buca and Qing-Tai Zhao, "Vertical Ge gate-all-around nanowire pMOSFETs with a diameter down to 20 nm," IEEE Electron Device Letter, vo. 41, no. 4, pp. 533-536, 2020 (Detail).

         9.  Lan-Tian Zhao, Mingshan Liu, Qing-Hua Ren, Chen-He Liu, Qing Liu, Ling-Li Chen, Yohann Spiegel, Frank Torregrosa, Wenjie Yu, and Qing-Tai Zhao, "Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si," Nanotechnology, vol. 31, pp. 205201: 1-7, 2020.

         8. Mingshan Liu*, Konstantin Mertens, Nils Driesch, Viktoria Schlykow, Thomas Grap, Florian Lentz, Stefan Trellenkamp, Jean-Michel Hartmann, Joachim Knoch, Dan Buca, and Qing-Tai Zhao, “Vertical heterojunctino Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact,” Solid-State Electronics, vol. 168, 107716:1-6, 2019 (Detail).

         7. Genquan Han, Yibo Wang, Yan Liu, Chunfu Zhang, Qian Feng, Mingshan Liu, Shenglei Zhao, Buwen Cheng, Jincheng Zhang, and Yue Hao, “GeSn quantum well p-channel tunneling FETs fabricated on Si(001) and (111) with improved subthreshold swing,” IEEE Electron Device Letter, vol. 37, no. 6, pp. 701-704, 2016.

        6. Mingshan Liu, Yan Liu, Hongjuan Wang, Qingfang Zhang, Chunfu Zhang, Shengdong Hu, Yue Hao, and Genquan Han, “Design of GeSn-Based heterojunction-enhanced N-channel tunneling FET with improved subthreshold swing and On-state current,” IEEE Transactions on Electron Devices, vol. 62, no. 4, pp. 1262-1268, 2015 (Detail).

        5. Genquan Han, Mingshan Liu, Qingfang Zhang, Yan Liu, Jing Yan, Buwen Cheng, and Yue Hao, “Germanium-Tin alloys: Applications in microelectronics and photonics,” Journal of Nanoelectronics and Optoelectronics, vol. 10, no. 1, pp.88-92, 2015.

        4. Hongjuan Wang, Yan Liu, Mingshan Liu, Qingfang Zhang, Chunfu Zhang, Xiaohua Ma, Jincheng Zhang, Yue Hao, and Genquan Han, “Performance improvement in novel Germanium-Tin/Germanium heterojunction-enhanced P-channel tunneling field-effect transistor,” Superlattices and Microstructures, vol.83, pp.401-410, 2015. 

        3. Genquan Han, Bin Zhao, Yan Liu, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, Shengdong Hu, Yue Hao, "Investigation of performance enhancement in InAs/InGaAs heterojunction enhanced N channel tunneling field-effect transistor," Superlattices and Microstructures, vol. 88, pp. 90-98, 2015.

        2. Yan Liu, Jing Yan, Mingshan Liu, Hongjuan Wang, Qingfang Zhang, Bin Zhao, Chunfu Zhang, Buwen Cheng, Yue Hao, and Genquan Han, “Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-semiconductor field-effect transistor fabricated on (111)-oriented substrate,” Semiconductor Science and Technology, vol. 29, no. 11, pp. 115027, Nov. 2014.

        1. Yan Liu, Jing Yan, Hongjuan Wang, Qingfang Zhang, Mingshan Liu, Bin Zhao, Chunfu Zhang, Buwen Cheng, Yue Hao, and Genquan Han, “Strained GeSn P-channel metal-oxide-semiconductor field-effect transistors with in situ Si2H6 surface passivation: impact of Sn composition,” IEEE Transactions on Electron Devices, vol. 61, no. 11, pp. 3639 - 3645, Nov. 2014.

Conferences

         12. Mingshan Liu, Jean-Michel Hartmann, Detlev Gruetzmacher, Dan Buca, and Qing-Tai Zhao, "Vertical gate all around GeSn/Ge GAA heterostructure transistors," (Invited) ECS Symposium in PRiME 2020, Hawaii, USA, Oct. 4-9, 2020, 1701. 

        11. Mingshan Liu*, Viktoria Schlykow, Jean-Michel Hartmann, Joachim Knoch, Detlev Gruetzmacher, Dan Buca, and Qing-Tai Zhao, "Vertical heterojunction Ge0.92Sn0.08/Ge GAA nanowire pMOSFETs: low SS of 67 mV/dec, small DIBL of 24 mV/V and highest Gm,ext of 870 uA/um," The 40th 2020 Symposia on VLSI Technology and Circuits (VLSI-2020), Hawaii, USA, June 14-19, TC2.4. (Detail)

        10. Mingshan Liu*, Stefan Scholz, Konstantin Mertens, Jin Hee Bae, Jean-Michel Hartmann, Joachim Knoch, Dan Buca, and Qing-Tai Zhao, "First demonstration of vertical Ge0.92Sn0.08/Ge and Ge GAA nanowire pMOSFETs with low SS of 66 mV/dec and small DIBL of 35 mV/V," The 65th International Electron Devices Meeting (IEDM-2019), San Francisco, USA, December 7-11, 2019, pp. 29.6 (Detail).

         9.  Mingshan Liu*, Konstantin Mertens, Nils Driesch, Thomas Grap, Stefan Trellenkamp, Jean-Michel Hartmann, Joachim Knoch, Dan Buca, and Qing-Tai Zhao, "Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs ,"  Joint International EUROSOI Workshop and International conference on Ultimate integration on Silicon (EUROSOI-ULIS), Grenoble, France, April 1-3, 2019, pp. 13-14 (Detail).

         8.  Stefan Glass, Mingshan Liu*, Kimihiko Kato, Jean-Michel Hartmann, Shinichi Takagi, Dan Buca, Siegfried Mantl, and Qing-Tai Zhao, "Mitigating edge effects in gate-normal tunneling field-effect transistors using a Ti/TiN dual-metal gate," International conference on Solid state Devices and Materials (SSDM), Tokyo, Japan, Sept. 9-13, 2018, pp. 219-220.

         7.  Mingshan Liu*, Konstantin Mertens, Stefan Glass, Stefan Trellenkamp, Siegfried Mantl, Dan Buca, and Qing-Tai Zhao, "Realization of Vertical Ge nanowires for Gate-All-Around transistors," Joint International EUROSOI Workshop and International conference on Ultimate integration on Silicon (EUROSOI-ULIS), Granada, Spain, March 19-21, 2018, pp. 1-4 (Detail).

         6.  Genquan Han, Mingshan Liu, Yan Liu, Buwen Cheng, and Yue Hao, “Germanium-Tin channel Field-effect transistors,” International Conference on Advanced Materials for Power Engineering(ICAMPE), India, Dec. 11-13, 2015.

         5. Genquan Han, Mingshan Liu, Yan Liu, Buwen Cheng, and Yue Hao, “Germanium-Tin alloys: application in microelectronics and photonics," The 4th World Congress of Advanced Materials,  Chongqing, China, May 27-29, 2015.

         4. Genquan Han, Mingshan Liu, and Yue Hao, “Tin-based group IV semiconductors: applications in microelectronics, photonics and solar cell,”  The EMN Photovoltaics Meeting, Orlando, Florida, USA, Jan.12-15, 2015.

         3. Mingshan Liu, Genquan Han, Yan Liu, Chunfu Zhang, Jincheng Zhang, Xiaohua Ma, Buwen Cheng, and Yue Hao, “Relaxed Ge0.97Sn0.03 P-Channel tunneling FETs with high drive current fabricated on Si and further improvement enabled by uniaxial tensile strain” International Symposium on VLSI-Technology, Systems and Applications(VLSI-TSA), Taiwan, April 27-30, 2015 (Detail).

         2. Hongjuan Wang, Genquan Han, Yan Liu, Mingshan Liu, Chunfu Zhang, Jincheng Zhang, Xiaohua Ma, and Yue Hao, “Germanium-Tin P-Channel Tunneling Field-Effect Transistors: Impacts of Biaxial Tensile Strain and Surface Orientation,” the 22nd International Symposium on VLSI- Technology, Systems and Applications(VLSI-TSA), Hsinchu, Taiwan, Apr. 27-29, 2015.

         1. Mingshan Liu, Genquan Han, Yan Liu, Chunfu Zhang, Hongjuan Wang, Xiangdong Li, Jincheng Zhang, Buwen Cheng, and Yue Hao, “Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: high hole mobility and dependence of performance on orientation,” IEEE Symposia on VLSI Technology (VLSI-2014), Hawaii, USA, Jun. 10-12, 2014, pp. 100 (Detail).

Patents

1.“GeSn n-channel metal-oxide-semiconductor field-effect transistor with source/drain stressor”     Yan Liu, Genquan Han, Mingshan Liu,                Patent No.: ZL 201310752768.X                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                    2."Biaxial tensile strained GeSn n-channel metal-oxide-semiconductor field-effect transistor"Yan Liu, Genquan Han, Mingshan Liu,                          Patent No.: ZL 201310752794.2

Master Thesis

             Extending Moore's Law: Investigation of GeSn-based High Performance, Low Power Dissipation Field Effect Transistor (Detail)