Home

Research Interests

 Novel semiconductor devices (MOSFET/Tunneling FET) design and device fabrication for future low power logic, device modeling, characterization and optimization. Advanced transistors with new materials and architecture.

Biographical Statement: 

Mingshan Liu graduated in Electrical Engineering from RWTH Aachen University ("Summa Cum Laude") and a research scientist in Forschungszentrum Juelich, Germany in 2020. He received the B.Sc. and M.Sc. degree from Chongqing University in 2014, 2016, respectively and spent first-year PhD at UCLA, USA. His research topics focus on SiGeSn-based vertical gate-all-around nanowire MOSFETs fabrication and characterization, GeSn-based high mobility MOSFET and steep slope TFET design. With the excellent research work, he has published several patents and present at conferences of International Electron Device Meeting (IEDM), IEEE Symposium on Very Large Scale Integration(VLSI), VLSI-TSA, SSDM, EUROSOI-ULIS, EMN Photovoltaics, World Congress of Advanced Materials, ICAMPE etc. He has published papers on Journal of IEEE Transactions on Electronic Devices,  IEEE Electronic Device Letter, ACS, Solid-state Electronics, Nanotechnology, Semiconductor Science and Technology, etc. His current research topics are device simulation, novel semiconductor devices design, fabrication, and characterization.