Spin-based electronic and optoelectronic devices- both fall within the scope of our research. My previous research on spintronics involved design, fabrication and experimental characterization of spin-valves, spin-LEDs and spin-LASERs. More recently our research group has been working on the analysis of spin-transfer-torque magnetic random access memory (STT-MRAM) devices, which are considered to be promising candidates for next-generation data storage owing to their non-volatility, fast access times, scalability and low-power consumption. In our recent work on STT-MRAMs, we investigated device-to-device variability of CoFeB/MgO based STT-MRAMs based on experiments and simulations, taking into account the influence of interface quality, temperature variation and device dimensionality.