a. Education

Khairurrijal obtained Bachelor of Science (B.Sc.) in Physics and Master of Science (M.Sc.) in Physics from Institut Teknologi Bandung (ITB) in 1989 and 1993, respectively, under the supervision of Prof. Moehamad Barmawi, Ph.D. (deceased on October 19, 2014). His undergraduate final project was on the syntheses of amorphous hydrogenated carbon (a-C:H) thin films using microwave plasma-assisted chemical vapor deposition generated by a microwave oven. The research findings were presented to a conference and the paper appeared as M. Barmawi and Khairurrijal, ”Microwave Plasma Chemical Vapor Deposition: A Model for the Production of Thin Carbon Film, with Possible Extension to Silicon”, in Chemistry and Technology of Silicon and Tin, V. G. Kumar Das, Ng Seik Weng, and Marcel Gielen (eds.), Oxford, Oxford University Press, 1992, pp. 405-410. For the master degree, his thesis was on the synthesis of porous silicon using an electrochemical method and its characterizations.

He then pursued doctorate degree in the Graduate School of Engineering of Hiroshima University to study ultrathin silicon dioxide for advanced metal-oxide-semiconductor field-effect transistors (MOSFETs). Under the supervision of Prof. Masataka Hirose, Ph.D, he obtained Doctor of Engineering (Dr.Eng.) in 2000 and published 7 (seven) papers in international journals and 12 (twelve) papers in proceedings during his study as listed as follows:

1. Khairurrijal, W. Mizubayashi, S. Miyazaki, and M. Hirose, “Unified Analytic Model of Direct and Fowler-Nordheim Tunnel Currents through Ultrathin Gate Oxides”, Applied Physics Letters, Vol. 77 No. 23 (6 December 2000), pp. 3580-3582.

2. Khairurrijal, W. Mizubayashi, S. Miyazaki, M. Hirose, “Analytic Model of Direct Tunnel Current through Ultrathin Gate Oxides”, Journal of Applied Physics, Vol. 87 No. 6 (15 March 2000), pp. 3000-3005.

3. M. Hirose, W. Mizubayashi, Khairurrijal, M. Ikeda, H. Murakami, A. Kohno, K. Shibahara, and S. Miyazaki, “Ultrathin Gate Dielectrics for Silicon Nanodevices”, Superlattices and Microstructures, Vol. 27 No. 5/6 (May/June 2000), pp. 383-393.

4. Khairurrijal, S. Miyazaki, and M. Hirose, “Electron Field Emission from a Silicon Subsurface Based on a Generalized Airy Function Approach”, Journal of Vacuum Science and Technology B, Vol. 17 No. 2 (March/April 1999), pp. 306-310.

5. Khairurrijal, S. Miyazaki, and M. Hirose, “Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile”, Japanese Journal of Applied Physics Part 1, Vol. 38 No. 3A (March 1999), pp.1352-1355.

6. Khairurrijal, S. Miyazaki, S. Takagi, and M. Hirose, "Analytical Modeling of Metal-Oxide-Semiconductor Inversion-Layer Capacitance", Japanese Journal of Applied Physics Part 2, Vol. 38 No. 1A/B (15 January 1999), pp. L30-L32.

7. Khairurrijal, S. Miyazaki, and M. Hirose, "Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces", Japanese Journal of Applied Physics Part 2, Vol. 36 No. 11B (15 November 1997), pp. L1541-L1544.

8. M. Hirose, Khairurrijal, M. Ikeda, H. Murakami, A. Kohno, T. Morie, and S. Miyazaki, “Tunneling in Ultrathin Gate Oxides and Related Properties of Silicon Nanodevices”, 2000 Silicon Nanoelectronics Workshop (Honolulu, 11-12 June 2000), pp. 6-7.

9. Khairurrijal, W. Mizubayashi, S. Miyazaki, and M. Hirose, “Unified Model of Tunnel Current through Nanometer-Thick Gate Oxides”, First International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (Tokyo, 22-23 October 1999), pp. 11-12.

10. Khairurrijal, W. Mizubayashi, S. Miyazaki, and M. Hirose, “Unified Model of Tunnel Current through Ultrathin Gate Oxides”, Workshop on Silicon Nanofabrication and Nanodevices (Tokyo, 18 September 1999), pp. 37-38.

11. Khairurrijal, W. Mizubayashi, S. Miyazaki, and M. Hirose, “Analytic Model of Direct Tunnel Current through Nanometer-Thick Gate Oxides”, 1999 Silicon Nanoelectronics Workshop (Kyoto, 12-13 June 1999), pp. 70-71.

12. K. Shibahara, H. Murakami, and Khairurrijal, “Evaluation and Analysis of Ultra Small Scale MOSFETs Characteristics”, 4th Symposium on Quantum Effects and Related Physical Phenomena (CREST, JST, 20-21 December 2000), p. 42.

13. K. Shibahara, H. Murakami, and Khairurrijal, “Evaluation and Analysis of Ultra Small Scale MOSFETs Characteristics”, 3rd Symposium on Quantum Effects and Related Physical Phenomena (CREST, JST, 21-22 December 1999), p. 42.

14. Khairurrijal, W. Mizubayashi, S. Miyazaki, and M. Hirose, “Modeling of Direct Tunnel Current through Ultrathin Gate Oxides”, Proceedings of 4th Specialist Meeting of Very Thin Silicon Oxide Films: Formation, Evaluation, and Reliability (Gotenba, 22-23 January 1999), pp. 327-332.

15. Khairurrijal, W. Mizubayashi, A. Kohno, S. Miyazaki, and M. Hirose, “Analytical Modeling of Direct Tunnel Current through Sub-4 nm Gate Oxides”, Extended Abstracts of 46th Spring Meeting of the Japanese Society of Applied Physics and Related Societies (Noda, 28-31 March 1999), p. 866.

16. Khairurrijal, A. Kohno, S. Miyazaki, and M. Hirose, “Analytical Model of MOS Inversion Layer Capacitance”, Extended Abstracts of 59th Autumn Meeting of the Japanese Society of Applied Physics and Related Societies (Hiroshima, 15-18 September 1998), p. 787.

17. Khairurrijal, “Electron Field Emission through Ultrathin Oxide Layers”, Proceedings Temu Ilmiah VII Persatuan Pelajar Indonesia di Jepang (Hiroshima, 5-6 September 1998), pp. 244-247.

18. Khairurrijal, A. Kohno, S. Miyazaki, and M. Hirose, “Effect of Electron Scattering on Field Emission Current from a Double Barrier Cathode using a Complex Potential”, Extended Abstracts of 45th Spring Meeting of the Japanese Society of Applied Physics and Related Societies (Tokyo, 28-31 March 1998), p. 706.

19. Khairurrijal, A. Kohno, S. Miyazaki, and M. Hirose, “New Theoretical Approach to Field Emission from Silicon Surfaces”, Extended Abstracts of 44th Spring Meeting of the Japanese Society of Applied Physics and Related Societies (Funabashi, 28-31 March 1997), p. 598.

In addition, his elementary school was SDN 98 Palembang till the 5^th level in 1975. Following his parents moving to Bengkulu, he has finished his elementary school at SDN 8 Bengkulu in 1976. He has then continued junior and senior high schools at SMPN 1 and SMPPN 61 (at present SMAN 5) Bengkulu, respectively.