Post Doctoral Fellow (Tel Aviv University, Israel)

multi-purpose VT SPM (Omicron model AFM-25), can be operated in both STM and AFM mode

Surface Science & Nanostructures" Laboratory, Mechanical Engin., Tel Aviv Univ., Israel (Director: Prof. Ilan Goldfarb)


Major features of this unique UHV system

Fast Entry Load Lock >>> sample loading & removal and tip insertion & removal

Preparation Chamber equipped with:

Sample manipulator with resistive and DC current heating and 6 degrees of freedom + magnetic probes

Sputter Ion Gun for surface cleaning

Growth source – K-cell for Molecular Beam Epitaxial (MBE) growth

Reflection High Energy Electron Diffraction (RHEED)

Crystal cleaver

Analysis Chamber equipped with:

Microscopes capable of time-resolved operation, namely

variable-temperature (25-1500K) scanning probe microscope (SPM), including

Scanning Tunneling Microscope (STM) and

beam-deflection Atomic Force Microscope (AFM)

Scanning Tunneling Spectroscopy

Sample manipulator with heating, cooling, and 6 degrees of freedom and magnetic probes

12-position carousel for multiple sample-tip storage

4-grid analyser used in two modes –

Low Energy Electron Diffraction (LEED) and

Auger Electron Spectroscopy (AES)

Quadrupole Mass Spectrometer

Growth source - Precise 3-pocket e-beam evaporator

Major investigations during my post doctoral position at Tel Aviv University

Superparamagnetic self-ordered Ni-Silicides nanostructures on vicinal Si(111) template : new pathways to high-density magnetic memory storage devices and spintronic applications. [more details: see ref. 37 in publications List]

Superparamagnetic self-ordered alpha-FeSi2 Nanostructures on vicinal Si(111) template: a anomalous magnetic behavior >> radically different from non-magnetic bulk alpha-FeSi2 phase >>> new pathways to high-density magnetic memory storage devices and spintronic applications [more details: see ref. 23 in publications List]

Self-ordered Ti- and Co-silicide nanoislands on vicinal Si(111) template as a function of the initial metal coverage: while a degree of this kind of SO for Co-silicide islands was higher than for the Ti-silicide ones, for both types of islands an inverse dependence of order parameter on coverage was found [more details, see ref. 20 in Publication List].

First evidence of the "Electronic growth" in Ti- and Co-silicide heterostructures on Si(111) : based on STM and scanning tunneling spectroscopy (STS) measurements, at RT, of heteroepitaxial island height distributions and density of states (DOS), respectively, we demonstrated the first evidence of the "Electronic Growth" in Ti- and Co-silicide heterostructures on Si(111) (more details, ref. 18 in Publication List].