Curriculum Vitae

Education

• Ph.D. in Electrical and Computer Engineering,  Purdue University, West Lafayette, IN (Aug.2011-May 2016)

  • Advisor: Prof. Peide(Peter) Ye

  • Thesis: High Mobility Channel Materials for Ultimate CMOS: Germanium and III-V Compounds

Awards 

• IEEE Paul Rappaport Award

  • IEEE, December, 2021

• IBM Master Inventor

  • IBM Corporation, October, 2020

• Research Division Award

  • IBM Corporation, March, 2018

• Manager's Choice Award

  • IBM Corporation, March, 2017, Nov,2016

• Best Paper in Session Award

  • SRC TECHCON, Austin, September, 2015

• Best Paper Award

  • Device Research Conference, Columbus, June, 2015

• Best Paper Award

  • Symposium on VLSI Technology (VLSI), Honolulu, June, 2014 (Leading Conference in Semiconductor field)

• Best Paper Award

  • Ed Nicollian Award, 44th IEEE Semiconductor Interface Specialists Conference (SISC), Washington DC, December,  2013

• Student Travel Grant for Purdue Engineering Ph.D. Candidates

  • Purdue University, Dec, 2014

• Meritorious Winner (1st Prize)

  • Mathematical Contest in Modeling of USA in 2010

• ZTE Scholarship

  • Zhongxing Telecommunication Equipment Corporation in 2009

Research Highlight(PhD Only)

• Germanium Based CMOS Technology Development

  • Invented a novel ’recessed channel S/D’ process using ICP dry etch, partially solving the long time issues in metal contacts to n-Ge

  • Demonstrated the world’s first CMOS logic circuits on Ge

  • Archived breakthroughs in Ge nMOSFETs with record high performance, pushing the device’s current to 5 times higher than before

  • Accomplished first sub-10 nm MOSFETs on Ge (both n and p type)

• InAs/GaSb Based 3D III-V CMOS Integration

  • Developed 3D gate structures with GaSb fins and InAs nanowires by using dry & wet etch

  • Realized the first InAs gate all around (GAA) MOSFETs by the top-down approach

  • Studied the interface passivation strategy for GaSb FinFETs

• Solid States Electronics TCAD Simulation

  • Developed the simulation codes using Synopsys Sentaurus TCAD Independently

  • Verified the volume inversion effects in 3D InGaAs nanowire MOSFETs

  • Explored short channel MOSFET behaviors on multiple materials (III-V, Si, Ge) with various structures (planar, QWFET, FinFET, GAA)

Publication

• I have authored/co-authored more than 50 journal and conference papers, for a complete list of publication, please click here

Professional Activities:

• Student Member, IEEE

• Member, IEEE Electron Device Society (EDS)

• Reviewer, IEEE Electron Device Letters (EDL), IEEE Transaction on Device and Material Reliability(TDMR), IEEE Transaction on Electron Devices(TED), Journal of nanomaterials, Chinese Physics B, Journal of The Electrochemical Society, Microelectronic Engineering, Journal of Applied Physics, Electronics, Micromachine

• 2015/2016/2017/2018/2019/2020/2021/2022 Electron Device Letter Golden Reviewer, 

• 2016/2017/2018/2019/2020/2021/2022 IEEE Transaction on Electron Devices Golden Reviewer