1. (Invited Talk) Surface stress anisotropy of Si reconstruction, H. Asaoka, IEEE 14th International conference on nanomaterials: applications & properties, Riga, Latvia, Sep. 8-13, 2024.
2. (Invited Talk) Uniaxial stress-driven reconstructed Si (110)-“16×2” surfaces, H. Asaoka, IEEE 13th International conference on nanomaterials: applications & properties, Bratislava, Slovakia, Sep. 10-15, 2023.
3. (Featured Lecture, Press Release) Hydrogen Isotope Gas Separation by Quantum Tunneling Effect of Graphene, S. Yasuda, H. Matsushima, M. Yano, T. Terasawa, H. Asaoka, J. S. Gueriba, W. A. Diño, K. Fukutani, The 70th Japan Society of Applied Physics Spring Meeting, Tokyo, Japan, Mar. 15-18, 2023. (in Japanese)
4. (Seminar Talk) Self-assembled low-dimensional nanostructure, H. Asaoka, Life Science and Systems Engineering Seminar, Kyushu Institute of Technology, Fukuoka, Japan, Dec. 17, 2021. (in Japanese)
5. (Invited Talk) Low dimensional nanostructure growth on anisotropic silicon (110) reconstruction surface, International Conference Mechanisms and Non-linear Problems of Nucleation and Growth of Crystals and Thin Films, H. Asaoka, St. Petersburg, Russia, Jul. 1-5, 2019.
6. (Invited Talk) Surface stress contrast between reconstruction and termination on silicon (111), H. Asaoka, IEEE 9th International Conference on Nanomaterials: Applications & Properties, Odesa, Ukraine, Sep. 15-20, 2019.
7. (Invited Talk) Control of nanostructures on silicon surfaces, H. Asaoka, International Conference on Nanosciences & Nanotechnologies, Thessaloniki, Greece, Jul. 3-6, 2018.
8. (Invited Talk) Anisotropic reconstructed silicon (110)- “16×2” surface, H. Asaoka, IEEE 8th International Conference on Nanomaterials: Applications & Properties, Zatoka, Ukraine, Sep. 9-14, 2018.
9. (Incentive Award 奨励賞) Crystal structure characterization of γ-ray irradiation YSZ by micro-Raman spectroscopy, K. Nakashima, Y. Uchibori, S. Yasuda, H. Asaoka, Y. Okuno, Research Workshop in Ibaraki Area, Kanto branch of Chemical Society of Japan, Ibaraki, Japan, Dec. 1, 2017. (in Japanese)
10. (Incentive Travel Award) Morphology and electronic state evolution, of SiO2 reduction process on Si(110), M. Yano, Y. Uozumi, S. Yasuda, H. Asaoka, The 8th International Symposium on Surface Science, Tsukuba, Japan, Oct. 22-26, 2017.
11. (Seminar Talk) Study of Hetero-epitaxial growth and buried hetero-interface of H monolayer, H. Asaoka, 19th Comprehensive Research Organization for Science and Society Workshop - Neutrons and Muons for Interface Investigation -, Tokai, Japan, Feb. 13, 2017. (in Japanese)
12. (Invited Talk) Real-time measurement of surface stress during nano-structural formation, H. Asaoka, The Hokkaido Branch of Electrochemical Society of Japan, Otaru, Japan, Jun. 25-26, 2016. (in Japanese)
13. (Incentive Award 奨励賞) Evaluation of clean Si(110) surface prepared by using chemical process, S. Suzuki, H. Asaoka, Y. Uozumi, K. Yamaguchi, Research Workshop in Ibaraki Area, Kanto branch of Chemical Society of Japan, Ibaraki, Japan,Nov. 27, 2015. (in Japanese)
14. (Invited Talk) Determination of surface stress during hetero-epitaxial growth, H. Asaoka, The Research Project of the Computer Center The 11th Workshop of Mathematical Science of Crystal Growth, Gakushuin University, Tokyo, Japan, Dec. 24-25, 2015. (in Japanese)
15. (Seminar Talk) Hetero-epitaxial growth of Ge/Si, H. Asaoka, Interdisciplinary Research Organization and Department of Engineering Joint Workshop, Miyazaki University, Miyazaki, Japan, Jan. 21, 2013. (in Japanese)
16. (Invited Talk) Buried hetero-interface of H monolayer, H. Asaoka, The 56th Japan Society of Applied Physics Spring Meeting, Tsukuba, Japan, Mar. 30-Apr. 2, 2009. (in Japanese)
17. (Invited Talk) Surface stress relief in Bi-mediated Ge growth on Si, H. Asaoka, T. Yamazaki, S. Shamoto, S. Filimonov, M. Suemitsu, The 36th Korean Vacuum Society Meeting, Seoul, Korea, Feb. 11-13, 2009.
18. (Seminar Talk) Stress evolution during hetero-epitaxial growth of Ge on Si, H. Asaoka, Forschungszentrum Jülich Seminar, Jülich, Germany, Nov. 14, 2008.
19. (Invited Talk) Stress evolution during surfactant-mediated growth of Ge on Si, H. Asaoka, 5th Japan-Korea Symposium on Surface Nanostructures, Sendai, Japan, Sep. 17-19, 2008.
20. (Invited Talk) Direct determination of surface stress during Ge growth on Si(111), H. Asaoka, the 34th Korean Vacuum Society Meeting, Seoul, Korea, Feb. 13-15, 2008.
21. (Hattori Award 服部賞) STM observation on initial oxidation process at Si(110)-16×2 surfae, Workshop on Gate Stack Technology and Physics H. Togashi, Y. Takahashi, A. Kato, A. Konno, M. Suemitsu, H. Asaoka. (in Japanese)
22. (Invited Talk) Structural formation on semiconductor surfaces, H. Asaoka, Y. Yamada, T. Yamazaki, A. Girard, H.Yamamoto, S. Shamoto, A. Arnold, S. Goto, M. Suemitsu, JSPS-KOSEF Asian Core Program 3rd Japan-Korea Symposium on Surface Nanostructures, Miyagi, Japan, Jun. 19-20, 2007.
23. (Invited Talk) Buried hetero-interface of H, D monolayer, H. Asaoka, M. Takeda, K. Soyama, S. Shamoto, T. Yamazaki, N. Torikai, The 67th Japan Society of Applied Physics Autumn Meeting, Shiga, Japan, Aug. 29-Sep.1, 2006. (in Japanese)
24. (Invited Talk) Si and Ge small clusters on Si(111) and Ge(111) surfaces -Small cluster behaviors depending on the surface reconstruction and strain modulation on the surfaces-, H. Asaoka, JSPS-KOSEF Asian Core Program 1st Japan-Korea Symposium on Surface Nanostructures, Zao, Japan, Jun. 28-29, 2006.
25. (Featured Lecture) Dynamic behavior of nanoclusters on Ge/Si(111) surfaces, H. Asaoka, B. Voigtländer, 12th International Conference on Solid Films and Surfaces, Hamamatsu, Japan, Jun 21-25, 2004.
26. (Seminar Talk) Growth of large isometric YBa2Cu3Ox single crystals and their flux pinning properties, H. Asaoka, High Temperature Superconductor Seminar, Osaka Prefecture University, Osaka, Japan, Sep. 11, 1995. (in Japanese)