Publication List (業績)

1.       (Press Release) In situ study of growth mechanism of germanene segregated through Ag(111) thin films by Raman and X-ray photoelectron spectroscopy, T. Terasawa, D. Katsube, M. Yano, T. Ozawa, Y. Tsuda, A. Yoshigoe, H. Asaoka, S. Suzuki, Chem. Mater. 38 (2026) 2933-2945URL: https://doi.org/10.1021/acs.chemmater.5c03462

2.       (Press Release) Bandgap opening in graphene by hybridization with Au (001) reconstructed surfaces, T. Terasawa, K. Matsunaga, N. Hayashi, T. Ito, S. Tanaka, S. Yasuda, H. Asaoka, Phy. Rev. Mater. 7 (2023) 014002 (1−10). URL: https://doi.org/10.1103/PhysRevMaterials.7.014002

3.       Band Gap Formation in Graphene by Hybridization with Hex-Au(001) Reconstructed Surface, T. Terasawa, K. Matsunaga, N. Hayashi, T. Ito, S. Tanaka, S. Yasuda, H. Asaoka, J. Surf. Sci. Soc. Jpn. 66 (2023) 525–530. https://doi.org/10.1380/vss.66.525 (in Japanese)

4.       Long and oriented graphene nanoribbon synthesis from well-ordered 10,10'-dibromo-9,9'-bianthracene monolayer on crystalline Au surfaces, M. Yano, S Yasuda, K. Fukutani, H. Asaoka, RSC Adv. 13 (2023) 14089–14096. URL:https://doi.org/10.1039/d2ra07570a

5.       (Press Release) Efficient hydrogen isotope separation by tunneling effect using graphene-based heterogeneous electrocatalysts in electrochemical hydrogen isotope pumping, S. Yasuda, H. Matsushima, K. Harada, R. Tanii, T. Terasawa, M. Yano, H. Asaoka, J. S. Gueriba, W. A. Diño, K. Fukutani, ACS Nano 16 (2022) 14362−14369. URL:https://doi.org/10.1021/acsnano.2c04655

6.       (United States Patent) Hydrogen isotope concentrating apparatus, S. Yasuda, H. Asaoka, H. Matsushima, FiledUS.202217691807.A, Mar.10, 2022, Published US.20220288532.A1, Sep. 15, 2022. URL: https://www.j-platpat.inpit.go.jp/c1800/PU/US-A-2022-0288532/48F670960C77E499A9F34B31E43B035C87B09B30922903599069004E7EBCDC50/50/ja

7.       (Canada Patent) Hydrogen isotope concentrating apparatus, S. Yasuda, H. Asaoka, H. Matsushima, FiledCA.3151601.A, Mar. 10, 2022, Published P CA.3151601.A1, Sep. 12, 2022. URL: https://www.ic.gc.ca/opic-cipo/cpd/eng/patent/3151601/summary.html

8.       (Japan Patent) Hydrogen isotope concentration device, S. Yasuda, H. Asaoka, H. Matsushima, Filed JP.2021039879.A, Mar. 12, 2021, Published JP.2022139473.A, Sep. 26, 2022. URL: https://www.j-platpat.inpit.go.jp/c1800/PU/JP-2022-139473/16BE25AA85A899A4292E30F0EF287DC0DFE2124657322302D3F60B60039A0547/11/ja

9.       (Japan Patent) Hydrogen isotope concentration device, S. Yasuda, H. Asaoka, H. Matsushima, Filed JP,2021-039878, Mar. 12, 2021, Published JP,2022-139472, A, Sep. 26, 2022. URL: https://www.j-platpat.inpit.go.jp/c1800/PU/JP-2022-139472/8AF45DE243FF3C8481B1F030C612EF4FF5E492B9EC7BEF355B8A6FF28245376C/11/ja

10.     Development of ultraslow, monochromatized, and mass-selected ion source toward measurement of hydrogen ion permeability of graphene, T. Terasawa, K. Fukutani, S. Yasuda, H. Asaoka, e-J. Surf. Sci. Nanotechnol. 20 (2022) 196−201. URL: https://doi.org/10.1380/ejssnt.2022-032

11.     Electrochemically driven specific alkaline metal cation adsorption on graphene interface, S. Yasuda, K. Tamura, M. Kato, H. Asaoka, I. Yagi, J. Phys. Chem. C 125 (2021) 22154−22162. URL: https://doi.org/10.1380/ejssnt.2022-032

12.     Confinement of hydrogen molecules at graphene–metal interface by electrochemical hydrogen evolution reaction, S. Yasuda, K. Tamura, T. Terasawa, M. Yano, H. Nakajima, T. Morimoto, T. Okazaki, R. Agari, Y. Takahashi, M. Kato, I. Yagi, H. Asaoka, J. Phys. Chem. C 124 (2020) 5300-5307. URL: https://doi.org/10.1021/acs.jpcc.1c03322

13.     Surface stress contrast between reconstruction and termination on silicon (111), H. Asaoka, IEEE Int. Conf. NAP(IEEE, Ukraine, 2019) 01SSI01(1-4). URL: https://ieeexplore.ieee.org/document/9075624

14.     Effect of hydrogen on chemical vapor deposition growth of graphene on Au substrates, T. Terasawa, T. Taira, S. Yasuda, S. Obata, K. Saiki, H. Asaoka, Jpn. J. Appl. Phys. 58 (2019) SIIB17 (1-6). URL: https://iopscience.iop.org/article/10.7567/1347-4065/ab19ae

15.     Kinetics of silver photodiffusion into amorphous S-rich germanium sulphide, Y. Sakaguchi, H. Asaoka, M. Mitkova, Pure Appl. Chem. 91 (2019) 1821-1835. URL: https://doi.org/10.1515/pac-2019-0217

16.     In-situ Optical Microscopy of Crystal Growth of Graphene Using Thermal Radiation, T. Terasawa, T. Taira, S. Obata, K. Saiki, S. Yasuda, H. Asaoka, Vac. Surf. Sci. 62 (2019) 629–634. (in Japanese) URL: https://doi.org/10.1380/vss.62.629

17.     (Selected for the front cover) Kinetics of silver photodiffusion into Ge20S80 Films: case of pre-reaction, Y. Sakaguchi, T. Hanashima, H. Aoki, H. Asaoka, A.A. Simon, M. Mitkova, Phys. Status Solidi A 215 (2018) 1800049 (1-12). URL: https://doi.org/10.1002/pssa.201870027

18.     Anisotropic reconstructed silicon (110)-“16×2” surface, H. Asaoka, IEEE Int. Conf. NAP (IEEE, Ukraine, 2018)03TFNMC12 (1-5). URL: https://ieeexplore.ieee.org/document/8915305

19.     Enhancement of Fe–N–C carbon catalyst activity for the oxygen reduction reaction: effective increment of active sites by a short and repeated heating process, S. Yasuda, Y. Uchibori, R. Osaka, K. Murakoshi, M. Wakeshima, Y. Hinatsu, H. Ogawa, M. Yano, H. Asaoka, RSC Adv. 8 (2018) 37600–37605. URL: https://doi.org/10.1039/C8RA08359B

20.     Characterization of SiO2 reduction reaction region at void periphery on Si(110), M. Yano, Y. Uozumi, S. Yasuda, C. Tsukada, H. Yoshida, A. Yoshigoe, H. Asaoka, Jpn. J. Appl. Phys. 57 (2018) 08NB13 (1-4). URL: https://doi.org/10.7567/JJAP.57.08NB13

21.     Uniform Si Nano-dot Fabrication Using Reconstructed Structure of Si(110), M. Yano, Y. Uozumi, S. Yasuda, H. Asaoka, Jpn. J. Appl. Phys. 57 (2018) 06HD04 (1-4). URL: https://iopscience.iop.org/article/10.7567/JJAP.57.06HD04

22.     Absorbent property of fullerene for cesium isotope separation using X-ray photoelectron spectroscopy, T. Sekiguchi, K. Yokoyama, Y. Uozumi, M. Yano, H. Asaoka, S. Suzuki, T. Yaita, Prog. Nucl. Sci. Technol. 5 (2018) 161-164. URL: https://www.aesj.net/document/pnst005/data/161_164

23.     STM-induced SiO2 decomposition on Si(110), M. Yano, Y. Uozumi, S. Yasuda, H. Asaoka, C. Tsukada, H. Yoshida, A. Yoshigoe, e-J. Surf. Sci. Nanotech. 16 (2018) 370-374. URL: https://doi.org/10.1380/ejssnt.2018.370

24.     Silver photo-diffusion into Ge-rich amorphous germanium sulfide – neutron reflectivity study, Y. Sakaguchi, H. Asaoka, M. Mitkova, J. Appl. Phys. 122 (2017) 235105 (1-12). URL: https://doi.org/10.1063/1.5000858

25.     Stress evolution during Si(111)7×7 surface reconstruction, H. Asaoka, Y. Uozumi, J. Surf. Sci. Jpn. 37 (2016) 446-450.(in Japanese) URL: http://doi.org/10.1380/jsssj.37.446

26.     Silver photo-diffusion and photo-induced macroscopic surface deformation of Ge33S67/Ag/Si substrate, Y. Sakaguchi, H. Asaoka, Y. Uozumi, K. Kondo, D. Yamazaki, K. Soyama, M. Ailavajhala, M. Mitkova, J. Appl. Phys. 120(2016) 055103 (1-10). URL: https://doi.org/10.1063/1.4959207

27.     Processes of silver photo-diffusion into Ge-chalcogenide probed by neutron reflectivity technique, Y. Sakaguchi, H. Asaoka, Y. Uozumi, Y. Kawakita, T. Ito, M. Kubota, D. Yamazaki, K. Soyama, G. Sheoran, M. Mitkova, Phys. Status Solidi A 213 (2016) 1894-1903. URL: https://doi.org/10.1002/pssa.201533037

28.     (Press Release) Synthesis of silicon carbide nanotube heterostructure by crystallinity change using ion irradiation technique, T. Taguchi, S. Yamamoto, K. Kodama, H. Asaoka, Carbon 95 (2015) 279-285. URL: https://doi.org/10.1016/j.carbon.2015.08.056

29.     Surface stress measurement of Si(111) 7×7 reconstruction by comparison with hydrogen-terminated 1×1 surface, H. Asaoka, Y. Uozumi, Thin Solid Films 591 (2015) 200-203. URL: https://doi.org/10.1016/j.tsf.2015.03.055

30.     Measurement of transient photo-induced changes in thin films at J-PARC -time-resolved neutron reflectivity measurement of silver photo-diffusion into Ge-chalcogenide films-, Y. Sakaguchi, H. Asaoka, Y. Uozumi, Y. Kawakita, T. Ito, M. Kubota, D. Yamazaki, K. Soyama, M. Ailavajhala, K. Wolf, M. Mitkova, M.W.A. Skoda, J. Phys. Soc. Jpn. 8(2015) 031023 (1-10). URL: https://doi.org/10.7566/JPSCP.8.031023

31.     Dynamics of silver photo-diffusion into Ge-chalcogenide films: time-resolved neutron reflectometry, Y. Sakaguchi, H. Asaoka, Y. Uozumi, Y. Kawakita, T. Ito, M. Kubota, D. Yamazaki, K. Soyama, M. Ailavajhala, M.R. Latif, K. Wolf, M. Mitkova, M.W.A. Skoda, J. Phys.: Conf. Ser. 619 (2015) 012046 (1-4). URL: https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012046

32.     Crystal structure and electron density distribution analyses of NdxCe1-xO2-δ for electrolyte by Rietveld/ maximum entropy method, T. Taguchi, N. Igawa, S. Miwa, A. Birumachi, H. Asaoka, M. Osaka, e-J. Surf. Sci. Nanotech. 13 (2015) 339-342. URL: https://doi.org/10.1380/ejssnt.2015.339

33.     Unique surface structure formation on Ge covered Si(110) surface, Y. Yokoyama, Y. Uozumi, H. Asaoka, J. Cryst. Growth 405 (2014) 35-38. URL: https://doi.org/10.1016/j.jcrysgro.2014.07.047

34.     Studies of silver photo-diffusion dynamics in Ag/GexS1-x (x=0.2 and 0.4) films by means of neutron reflectometry, Y. Sakaguchi, H. Asaoka, Y. Uozumi, Y. Kawakita, T. Ito, M. Kubota, D. Yamazaki, K. Soyama, M. Ailavajhala, M.R. Latif, M. Mitkova, Can. J. Phys. 92 (2014) 654-658. URL: https://doi.org/10.1139/cjp-2013-0593

35.     (Japan Patent) Non-fixed type electric heating holder, T. Yamazaki, H. Asaoka, Filed JP,2011-196724, Sep. 9, 2011, Published JP,2013-058659, A, Mar. 28, 2013. URL: https://www.j-platpat.inpit.go.jp/c1800/PU/JP-2013-058659/F6682685318DCDE0CD3871966C07207C7844BB048BE685327E40057DE49E4298/11/ja

36.     Direct measurement of surface stress during Bi-mediated Ge growth on Si, H. Asaoka, T. Yamazaki, K. Yamaguchi, S. Shamoto, S.N. Filimonov, M. Suemitsu, Surf. Sci. 609 (2013) 157-160. URL: https://doi.org/10.1016/j.susc.2012.12.002

37.     Direct stress measurement of Si(111) 7×7 reconstruction, H. Asaoka, T. Yamazaki, Y. Yokoyama, K. Yamaguchi, J. Cryst. Growth 378 (2013) 37-40. URL: https://doi.org/10.1016/j.jcrysgro.2012.12.124

38.     Change of Si(110) reconstructed structure by Ge nano cluster formation, Y. Yokoyama, T. Yamazaki, H. Asaoka, J. Cryst. Growth 378 (2013) 230-232. URL: https://doi.org/10.1016/j.jcrysgro.2012.10.047

39.     Preferential adsorption of C60 molecules to step edges of the Si(110)-16×2 single domain surface, Y. Yokoyama, Y. Yamada, H. Asaoka, M. Sasaki, J. Phys.: Conf. Ser. 417 (2013) 012036 (1-6). URL: https://iopscience.iop.org/article/10.1088/1742-6596/417/1/012036/

40.     Ordering of C60 on one-dimensional template of single-domain Ge(110)-16×2 and Si(110) -16×2 surfaces, Y. Yokoyama, A. Sinsarp, Y. Yamada, H. Asaoka, M. Sasaki, Appl. Phys. Express 5 (2012) 025203 (1-3). URL: https://iopscience.iop.org/article/10.1143/APEX.5.025203

41.     Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon, T. Yamazaki, H. Asaoka, T. Taguchi, S. Yamamoto, D. Yamazaki, R. Mruyama, M. Takeda, S. Shamoto, Thin Solid Films 520 (2012) 3300-3303. URL: https://doi.org/10.1016/j.tsf.2011.10.081

42.     One-dimensional nanotemplate structure of a Si(110) substrate, Y. Yokoyama, Y. Yamada, H. Asaoka, M. Sasaki, e-J. Surf. Sci. Nanotech. 10 (2012) 509-512. URL: https://doi.org/10.1380/ejssnt.2012.509

43.     Surface analysis of single-crystalline β-FeSi2, Y. Yamada, M. Wei, H. Asaoka, H. Yamamoto, F. Esaka, H. Udono, T. Tsuru, Phys. Proc. 11 (2011) 67-70. URL: https://doi.org/10.1016/j.phpro.2011.01.034

44.     Epitaxial growth of largely mismatched crystals on H-terminated Si (111) surfaces, H. Asaoka, J. Phys. Condens. Matter. 22 (2010) 474007 (1-7). URL: https://iopscience.iop.org/article/10.1088/0953-8984/22/47/474007

45.     Neutron reflectivity measurement of buried hydrogen mono-atomic layer at the hetero-interface in a highly mismatched Sr and H-terminated Si(111), T. Yamazaki, D. Yazaki, H. Asaoka, T. Taguchi, S. Shamoto, Y. Toyoshima, J. Surf. Sci. Jpn. 31 (2010) 380-385. (in Japanese) URL: https://doi.org/10.1380/jsssj.31.380

46.     (Japan Patent) One-dimensional nanostructure on Si(110) surface and production method of the same, Y. Yamada, H. Asaoka, H. Yamamoto, S. Shamoto, Filed JP,2008-182426, Jul. 14, 2008, Published JP,2010-018504,A, Jan. 28, 2010.URL: https://www.j-platpat.inpit.go.jp/c1800/PU/JP-2008-182426/82C48F9CD053D6AE76E94BE19C1D117C46FE8B0E0215BAF913FD173037B67144/10/ja

47.     Real-time stress analysis of Ge nanodot growth on H-terminated Si(111)-1×1 and Si(111)-7×7 surfaces, H. Asaoka, T. Yamazaki, S. Shamoto, Curr. Appl. Phys. 8 (2008) 246-248. URL: https://doi.org/10.1016/j.cap.2007.10.052

48.     Controlling the surface chirality of Si(110), Y. Yamada, A. Girard, H. Asaoka, H. Yamamoto, S. Shamoto, Phys. Rev. B 77 (2008) 153305 (1-3). URL: https://doi.org/10.1103/PhysRevB.77.153305

49.     SR-PES and STM observation of metastable chemisorption state of oxygen on Si(110)-16×2 surface, Y. Yamamoto, H. Togashi, A. Kato, Y. Takahashi, A. Konno, Y. Teraoka, A. Yoshigoe, H. Asaoka, M. Suemitsu, Appl. Surf. Sci. 254(2008) 6232-6234. URL: https://doi.org/10.1016/j.apsusc.2008.02.148

50.     Surface preparation and characterization of single crystalline β-FeSi2, Y. Yamada, I. Wakaya, S. Ohuchi, H. Yamamoto, H. Asaoka, S. Shamoto, H. Udono, Surf. Sci. 602 (2008) 3006-3009. URL: https://doi.org/10.1016/j.susc.2008.07.035

51.     Single-domained Si(110)-“16×2” surface, Y. Yamada, A. Girard, H. Asaoka, J. Phys.: Conf. Ser.100 (2008) 072018 (1-4). URL: https://iopscience.iop.org/article/10.1088/1742-6596/100/7/072018

52.     Buried H, D monolayer at hetero-interface in a highly mismatched epitaxy on Si, T. Yamazaki, H. Asaoka, M. Takeda, D. Yamazaki, T. Taguchi, N. Torikai, Y. Toyoshima, S. Shamoto, Trans. Mater. Res. Soc. Jpn. 33 (2008) 611-614.URL: https://doi.org/10.14723/tmrsj.33.611

53.     Fabrication of Si(110)-16×2 single-domain surface, Y. Yamada, A. Girard, H. Asaoka, H. Yamamoto, S. Shamoto, J. Surf. Sci. Jpn. 29 (2008) 401-406. (in Japanese) URL: https://doi.org/10.1380/jsssj.29.401

54.     Real-time stress measurement of Ge/Si(111)-7×7 heteroepitaxial growth, H. Asaoka, T. Yamazaki, S. Shamoto, A. Arnold, S. Goto, M. Suemitsu, J. Surf. Sci. Jpn. 28 (2007) 500-503. (in Japanese) URL: https://doi.org/10.1380/jsssj.28.500

55.     Single-domain Si(110)-16×2 surface fabricated by electromigration, Y. Yamada, A. Girard, H. Asaoka, H. Yamamoto, S. Shamoto, Phys. Rev. B 76 (2007) 153309 (1-4) URL: https://doi.org/10.1103/PhysRevB.76.153309

56.     Observation of initial oxidation process on Si(110)-16×2 by scanning tunneling microscopy, H. Togashi, Y. Takahashi, A. Kato, H. Asaoka, A. Konno, M. Suemitsu, Jpn. J. Appl. Phys. 46 (2007) 3239-3243. URL: https://iopscience.iop.org/article/10.1143/JJAP.46.3239

57.     XPS and STM studies on initial oxidation of Si(110)-16×2, M. Suemitsu, H. Togashi, A. Kato1, Y. Takahashi, A. Konno, Y. Yamamoto, Y. Teraoka, A. Yoshigoe, H. Asaoka, Mater. Res. Soc. Symp. Proc. 996 (2007) 0996-H01-04. URL: https://doi.org/10.1557/PROC-0996-H01-04

58.     Initial growth stage of a highly mismatched strontium film on a hydrogen-terminated silicon (111) surface, H. Asaoka, T. Yamazaki, S. Shamoto, Appl. Phys. Lett. 88 (2006) 201911 (1-3). URL: https://doi.org/10.1063/1.2205160

59.     In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces, H. Asaoka, T. Yamazaki, H. Yamamoto, S. Shamoto, Thin Solid Films 508 (2006) 175-177. URL: https://doi.org/10.1016/j.tsf.2005.08.413

60.     Crystal growth of SrTiO3 films on H-terminated Si(111) with SrO buffer layers, Y. Machida, H. Asaoka, H. Yamamoto, S. Shamoto, Surf. Sci. 564 (2006) 724-728. URL: https://doi.org/10.1016/j.susc.2005.11.024

61.     (Top25 Hottest Article) Size of small Si and Ge clusters on Si(111) and Ge(111) surfaces, H. Asaoka, V. Cherepanov, B. Voigtländer, Surf. Sci. 588 (2005) 19-25. URL: https://doi.org/10.1016/j.susc.2005.05.022

62.     In-situ observation of strain and stress evolution during thin film growth on H-terminated Si, H. Asaoka, T. Yamazaki, S. Shamoto, J. Jpn. Assoc. Cryt. Growth, 32 (2005) 160. (in Japanese) URL: https://doi.org/10.19009/jjacg.32.3_160

63.     Dislocation networks in conventional and surfactant mediated Ge/Si(111) epitaxy, S.N. Filimonov, V. Cherepanov, N. Paul, H. Asaoka, J. Brona, B. Voigtländer, Surf. Sci. 599 (2005) 76-84. URL: https://doi.org/10.1016/j.susc.2005.09.039

64.     Nucleation of oxides during dry oxidation of Si(001)-2×1 by scanning tunneling microscopy Studied by Scanning Tunneling Microscopy, H. Togashi, H. Asaoka, T. Yamazaki, M. Suemitsu, Jpn. J. Appl. Phys. 44 (2005) L1377-1380.URL: https://iopscience.iop.org/article/10.1143/JJAP.44.L1377

65.     Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant, N. Paul, H. Asaoka, J. Mysliveček, B. Voigtländer, Phys. Rev. B 69 (2004) 193402 (1-4). URL: https://doi.org/10.1103/PhysRevB.69.193402

66.     Comparison between surfactant-mediated Bi/Ge/Si(111) epitaxy and Ge/Si(111) epitaxy, N. Paul, H. Asaoka, B. Voigtländer, Surf. Sci. 564 (2004) 187-200. URL: https://doi.org/10.1016/j.susc.2004.06.194

67.     (Japan Patent) Unfixed-type sample holder which does not interfere with reflection high-energy electron diffraction observation and composite device using the sample holder, Y. Machida, H. Asaoka, K. Hojo, H. Yamamoto, FiledJP,2003-126265, May. 1, 2003, Published JP,2004-333188, A, Nov. 25, 2004. URL: https://www.j-platpat.inpit.go.jp/c1800/PU/JP-2003-126265/6185F16B810612F2CEACA1DE53C00CF33102F380CA498C9FEE14996C539CB011/10/ja

68.     Real-time stress/strain measurement during growth of Sr and SrO epilayer on H-terminated Si, H. Asaoka, Y. Machida, H. Yamamoto, K. Hojou, K. Saiki, A. Koma, Thin Solid Films 433 (2003) 140-143. URL: https://doi.org/10.1016/S0040-6090(03)00305-5

69.     (Japan Patent) Method of eliminating and controlling internal stress of oxide thin grown on semiconductor substrate, H. Asaoka, H. Yamamoto, A. Koma, K. Saiki, Filed JP,2002-007504, Jan. 16, 2002, Published JP,2003-209106, A, Jul. 25, 2003. URL: https://www.j-platpat.inpit.go.jp/c1800/PU/JP-2002-007504/D01BFA455E7C39506DB244543B29DCD06454149556FED1E37197F458C126A0C8/10/ja

70.     Stress evolution during epitaxial growth of SrO films on hydrogen-terminated Si(111) surfaces, H. Asaoka, Y. Machida, H. Yamamoto, K. Hojou, K. Saiki, A. Koma, Solid State Commun. 124 (2002) 239-242. URL: https://doi.org/10.1016/S0038-1098(02)00579-3

71.     History effects and phase diagram near the lower critical point in YBa2Cu3O7 single crystals, A.A. Zhukov, P.A.J.de Groot, S. Kokkaliaris, E.di Nicolo, A.G.M. Jansen, E. Mossang, G.M. Martnez, P. Wyder, T. Wolf, H. Kupfer, H. Asaoka, R. Gagnon, L. Taillefer, Phys. Rev. Lett. 87 (2001) 017006 (1-4). URL: https://doi.org/10.1103/PhysRevLett.87.017006

72.     LT-STM/STS observation on an electrically field etched surface of YBa2Cu3O7-δ single crystal, H. Murakami, H. Asaoka, K. Sakai, T. Ito, M. Tonouchi, Appl. Surf. Sci. 175-176 (2001) 306-311. URL: https://doi.org/10.1016/S0169-4332(01)00047-2

73.     Silicon cluster formation by molecular ion irradiation-relationship between irradiated ion species and cluster yield, H. Yamamoto, T. Saito, H. Asaoka, Appl. Surf. Sci. 178 (2001) 127-133. URL: https://doi.org/10.1016/S0169-4332(01)00250-1

74.     Formation of binary clusters by molecular ion irradiation, H. Yamamoto, H. Asaoka, Appl. Surf. Sci. 169-170 (2001) 309-309. URL: https://doi.org/10.1016/S0169-4332(00)00680-2

75.     Fabrication of β-FeSi2 thin film on Si (111) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS), T. Saito, H. Yamamoto, H. Asaoka, M. Haraguchi, M. Imamura, N. Matubayashi, T. Tanaka, H. Shimada, K. Hojou, Anal. Sci.17 (2001) 1073-1076. URL: https://doi.org/10.14891/analscisp.17icas.0.i1073.0

76.     Strongly enhanced secondary ion emission by molecular ion irradiation, H. Yamamoto, T. Saito, H. Asaoka, J. Trace. Microprobe Techn. 19 (2001) 571-569. URL: https://doi.org/10.1081/TMA-100107592

77.     Intrinsic pinning does not influence the vortex melting transition of YBa2Cu3O6.94 in H ⊥ c configuration, T. Ishida, K. Kitamura, K. Okuda, H. Asaoka, Jpn. J. Appl. Phys. 70 (2001) 2110-2113. URL: https://doi.org/10.1143/JPSJ.70.2110

78.     Heteroepitaxial growth of SrO on hydrogen-terminated Si (100) surface, H. Asaoka, K. Saiki, A. Koma, H. Yamamoto, Thin solid films 369 (2000) 273-276. URL: https://doi.org/10.1016/S0040-6090(00)00877-4

79.     Low-temperature epitaxial growth of SrO on hydrogen-passivated Si (100) surface, H. Asaoka, K. Saiki, A. Koma, H. Yamamoto, Physica B 284-288 (2000) 2101-2102. URL: https://doi.org/10.1016/S0921-4526(99)02986-5

80.     Nature of vortex melting transition when the field is perpendicular to the c-axis of untwinned YBa2Cu3O6.93, T. Ishida. K. Okuda, H. Asaoka, Physica B 284-288 (2000) 727-728. URL: https://doi.org/10.1016/S0921-4526(99)02425-4

81.     Magnetization measurements on anomalous peak effect in detwinned YBCO single crystals, S. Okayasu, M. Sasase, H. Asaoka, Physica B 284-288 (2000) 715-716. URL: https://doi.org/10.1016/S0921-4526(99)02409-6

82.     Transformations of the peak-effect near the multicritical point in YBa2Cu3Oy single crystals, A. A. Zhukov, S. Kokkaliaris, P.A.J.de Groot, A.G.M. Jansen, E. Mossang, H. Asaoka, T. Wolf, R. Gagnon, L. Taillefer, Physica C 341-348(2000) 1027-1030. URL: https://doi.org/10.1016/S0921-4534(00)00769-3

83.     The order of phase transition of reentrant line in detwinned YBCO single crystal, S. Okayasu, H. Asaoka, Physica C 317-318 (1999) 633-636. URL: https://doi.org/10.1016/S0921-4534(99)00160-4

84.     Dose vortex lattice of YBa2Cu3O6.93 in H⊥c melt below intrinsic-pinning irreversibility line?, T. Ishida. K. Okuda, H. Asaoka, J. Low Temp. Phys. 117 (1999) 1387-1391. URL: https://doi.org/10.1023/A:1022585431631

85.     Role of intrinsic pinning for melting transition of YBa2Cu3O6.93 in the parallel field to CuO2 layers, T. Ishida. K. Okuda, H. Asaoka, Advances in Superconductivity XI (Springer-Verlag, Tokyo, 1999) p. 469-472. URL: https://link.springer.com/chapter/10.1007/978-4-431-66874-9_106

86.     Reentrant properties due to the peak effect in untwinned YBCO single crystal, S. Okayasu, H. Asaoka, Advances in Superconductivity X (Springer-Verlag, Tokyo, 1998) p. 549-552. URL: https://link.springer.com/chapter/10.1007/978-4-431-66879-4_128

87.     Vortex pinning and irreversibility line in single crystal YBa2Cu3O7 with parallel twin boundaries, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, Advances in Superconductivity X (Springer-Verlag, Tokyo, 1998) p. 461-464. URL: https://link.springer.com/chapter/10.1007/978-4-431-66879-4_106

88.     (Citation index: more than 50) Two- and fourfold ab-plane torque symmetry in untwinned YBa2Cu3O7 single crystals, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, Phys. Rev. B 56 (1997) 11897-11902. URL: https://doi.org/10.1103/PhysRevB.56.11897

89.     Epitaxial growth of zirconium dioxide films on sapphire substrates, H. Asaoka, Y. Katano, K. Noda, Appl. Surf. Sci. 113/114 (1997) 198-201. URL: https://doi.org/10.1016/S0169-4332(96)00830-6

90.     Influence of growth condition on magnetic flux pinning in YBa2Cu3Ox single crystals, H. Asaoka, Y. Kazumata, H. Takei, K. Noda, Physica C 279 (1997) 246-252. URL: https://doi.org/10.1016/S0921-4534(97)00155-X

91.     In-plane thermal conductivity and Lorenz number in YBa2Cu3O7-y, K. Takenaka, Y. Fukuzumi, K. Mizuhashi, S. Uchida, H. Asaoka, H. Takei, Phys. Rev. B 56 (1997) 5654-5661. URL: https://doi.org/10.1103/PhysRevB.56.5654

92.     Sequential vortex states upon lattice melting in untwinned single-crystal YBa2Cu3O7, T. Ishida, K. Okuda, H. Asaoka, Phys. Rev. B 56 (1997) 5128-5131. URL: https://doi.org/10.1103/PhysRevB.56.5128

93.     (Citation index: more than 50) Magnetic phase diagram and the vortex pinning in YBa2Cu3Oy single crystals, T. Nishizaki, Y. Onodera, T. Naito, H. Asaoka, H. Takei, N. Kobayashi, Czech. J. Phys. 46 (1996) 1595-1596. URL: https://doi.org/10.1007/BF02562912

94.     Effect of twin boundaries on flux pinning in YBa2Cu3Ox single crystals, H. Asaoka, Y. Kazumata, H. Takei, K. Noda, Physica C 268 (1996) 14-20. URL: https://doi.org/10.1016/0921-4534(96)00370-X

95.     Flux motion in twin boundaries of YBa2Cu3Ox single crystals, H. Asaoka, Y. Kazumata, H. Takei, K. Noda, Czech. J. Phys. 46 (1996) 1723-1724. URL: https://doi.org/10.1007/BF02562976

96.     Magnetization jump and the vortex lattice melting transition in YBa2Cu3Oy, T. Nishizaki, Y. Onodera, N. Kobayashi, H. Asaoka, H. Takei, Phys. Rev. B 53 (1996) 82-85. URL: https://doi.org/10.1103/PhysRevB.53.82

97.     Magnetization jump due to the first-order vortex lattice melting transition in YBa2Cu3Oy single crystals, Y. Onodera, T. Nishizaki, N. Kobayashi, H. Asaoka, H. Takei, Physica C 263 (1996) 409-411. URL: https://doi.org/10.1016/0921-4534(95)00733-4

98.     Anisotropy of superconductivity in untwinned YBa2Cu3O7 single crystal, T. Ishida, K. Inoue, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, Physica C 263 (1996) 260-263. URL: https://doi.org/10.1016/0921-4534(96)00024-X

99.     Nonlinear meissner effect in double layered high-Tc cuprates investigated by measurement of the penetration depth, A. Maeda, T. Hanaguri, Y. Iino, S. Masuoka, Y. Kokata, J. Shimoyama, K. Kishio, H. Asaoka, Y. Matsushita, M. Hasegawa, H. Takei, J. Phys. Soc. Jpn. 65 (1996) 3638-3645. URL: https://doi.org/10.1143/JPSJ.65.3638

100.  In-plane microwave conductivity and quasiparticle scattering rate of superconducting high-Tc cuprates, T. Shibachi, H. Kitano, A. Maeda, H. Asaoka, H. Takei, I. Shigaki, T. Kimura, K. Kishio, K. Izumi, T. Suzuki, K. Uchinokura, J. Phys. Soc. Jpn. 65 (1996) 3266-3273. URL: https://doi.org/10.1143/JPSJ.65.3266

101.  Gap symmetry and intrinsic intraplane pinning of untwinned YBa2Cu3O7 single crystals, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, J. Low Temp. Phys. 105 (1996) 1171-1176. URL: https://doi.org/10.1007/BF00753857

102.  Evidence for vortex lattice melting and softening in untwinned YBa2Cu3O7 single crystal, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, J. Low Temp. Phys. 105 (1996) 1165-1170. URL: https://doi.org/10.1007/BF00753858

103.  In-plane torque and gap symmetry of untwinned YBa2Cu3O7 crystal, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, Czech. J. Phys. 46 (1996) 1217-1218. URL: https://doi.org/10.1007/BF02562723

104.  Kim critical state in twinned YBa2Cu3O7 single crystal, T. Mikayama, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, Advances in Superconductivity VIII (Springer-Verlag, Tokyo, 1996) p. 571-574. URL: https://link.springer.com/chapter/10.1007/978-4-431-66871-8_125

105.  Torque magnetometry of twinned YBa2Cu3O7 single crystal, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, Advances in Superconductivity VIII (Springer-Verlag, Tokyo, 1996) p. 189-192. URL: https://link.springer.com/chapter/10.1007/978-4-431-66871-8_39

106.  (Citation index: more than 60) c-Axis microwave conductivity of YBa2Cu3O7-δ in the superconducting state, H. Kitano, T. Shibachi, K. Uchinokura, A. Maeda, H. Asaoka, H. Takei, Phys. Rev. B 51 (1995) 1401-1404. URL: https://doi.org/10.1103/PhysRevB.51.1401

107.  Anisotropic properties of the anomalous second peak in the magnetization curves and the irreversibility field of YBa2Cu3Oy (6.6 ≤ y ≤ 6.9) single crystals, N. Kobayashi, K. Hirano, H. Iwasaki, T. Sakai, S. Awaji, K. Watanabe, H. Asaoka, H. Takei, Physica C 251 (1995) 255-262. URL: https://doi.org/10.1016/0921-4534(95)00393-2

108.  Irreversibility line of YBa2Cu3O7 single crystal with optimum oxygen stoichiometry, T. Ishida, K. Okuda, H. Asaoka, Y. Kazumata, K. Noda, H. Takei, Advances in Superconductivity VII (Springer-Verlag, Tokyo, 1995) p. 527-530. URL: https://link.springer.com/chapter/10.1007/978-4-431-68535-7_117

109.  Crystal growth mechanism of YBa2Cu3Ox from coexisting region of solid with melt, H. Asaoka, H. Takei, K. Noda, Jpn. J. Appl. Phys. 33 (1994) L923-926. URL: https://iopscience.iop.org/article/10.1143/JJAP.33.L923

110.  Homogeneity of superconductivity in YBa2Cu3Ox single crystals, H. Asaoka, T. Ishida, Y. Kazumata, K. Okuda, K. Noda, H. Takei, Jpn. J. Appl. Phys. 33 (1994) 6537-6538. URL: https://iopscience.iop.org/article/10.1143/JJAP.33.6537

111.  Influence of the flux creep on the irreversibility line of YBa2Cu3Oy (6.6<y<6.9) single crystal, N. Kobayashi, K. Hirano, Y. Minagawa, T. Sakai, K. Watanabe, S. Awaji, H. Asaoka, H. Takei, Physica C 235-240 (1994) 2785-2786. URL: https://doi.org/10.1016/0921-4534(94)92613-1

112.  Microwave properties perpendicular to the CuO2 planes, T. Shibachi, H. Kitano, A. Maeda, T. Tamegai, K. Uchinokura, T. Kimura, K. Kisyou, H. Asaoka, H. Takei, Physica C 235-240 (1994) 1819-1820. URL: https://doi.org/10.1016/0921-4534(94)92131-8

113.  (Citation index: more than 90) Growth of large isometric YBa2Cu3Ox single crystals from coexisting region of solid with melt in Y2O3crucibles, H. Asaoka, H. Takei, Y. Iye, M. Tamura, M. Kinoshita, H. Takeya, Jpn. J. Appl. Phys. 32 (1993) 1091-1096. URL: https://iopscience.iop.org/article/10.1143/JJAP.32.1091

114.  Growth of large polyhedral single crystals of YBa2Cu3Ox, H. Takei, H. Asaoka, Y. Iye, H. Takeya, Mechanism of Superconductivity (Jpn. J. Appl. Phys., Tokyo, 1992) JJAP Series 7, p. 71-75. URL: http://dl.ndl.go.jp/info:ndljp/pid/10472380

115.  (Citation index: more than 50) Growth of polyhedral YBa2Cu3Ox single crystals and their anisotropic properties, H. Takei, H. Asaoka, Y. Iye, H. Takeya, Jpn. J. Appl. Phys. 30 (1991) L1102-1105. URL: https://iopscience.iop.org/article/10.1143/JJAP.30.L1102

116.  Growth and characterization of polyhedral YBa2Cu3Ox single crystals, H. Asaoka, H. Takei, Y. Iye, Physica C 190(1991) 64-66. URL: https://doi.org/10.1016/S0921-4534(05)80199-6

117.  Surface analysis of cleaved YBa2Cu3O6+x by auger electron spectroscopy, K. Ogawa, J. Fujiwara, H. Takei, H. Asaoka, Physica C 190 (1991) 39-42. URL: https://doi.org/10.1016/S0921-4534(05)80191-1