Publications

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*PUBLICATIONS (REFERRED JOURNALS)*

 ·  Web of Knowledge based H-index: 30

1. J. Baek, Y. Kim, K. Baik, S. Jang, H2S Sensing Characteristics of NiO Nanopetal Film, ECS J. Solid State Sci. Technol.12, 085002 (2023)

2.  Y. Kim, M. Kim, S. Kim, K. Baik, S. Jang, β-Ga2O3 flake based Schottky diode hydrogen sensor, Sens. Actuators B Chem.379, 133212 (2023)

3. Y. Kim, M. Kim, K. Baik, S. Jang, Low-resistance Ti/Au ohmic contact on (001) plane Ga2O3 Crystal,  ECS J. Solid State Sci. Technol.11, 045003 (2022)

4. M. Kim,Y. Kim, J. Kim, K. Baik, S. Jang, (100) Plane β-Ga2O3 Flake Based Field Effect Transistor and Its Hydrogen Responses, ECS J. Solid State Sci. Technol. 10, 125004 (2021)

5.  M. Kim,Y. Kim, J. Kim, K. Baik, S. Jang, BCl3-Based Dry Etching of Exfoliated (100) β-Ga2O3 Flakes, ECS J. Solid State Sci. Technol. 9, 075001 (2020)

6. K. Baik, S. Jang, Carbon Dioxide Sensing Characteristics of AlGaN/GaN High Electron Mobility Transistor with ZnO Nanorods, Sens. Mater. 32, 2569 (2020)

7. K. Baik, S. Jung, C. Cho, K. Park, F. Ren, S. J. Pearton, S. Jang, AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer, Sens. Actuators B, 317, 128234 (2020)

8. Kwang Hyeon Baik, Soohwan Jang, AlGaN/GaN Heterostructure Based Hydrogen Sensor with Temperature Compensation, ECS J. Solid State Sci. Technol. 9, 045010 (2020)

9. Soohwan Jang, Sunwoo Jung, Kwang Hyeon Baik, Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer, Sensors 20, 830 (2020)

10. Soohwan Jang, Sunwoo Jung, Kwang Hyeon Baik, The Dependence of Crystal Plane on Hydrogen Sensing Properties of ZnO Bulk Substrates, ECS J. Solid State Sci. Technol. 8, Q85 (2019)

11. Soohwan Jang, Sunwoo Jung, Kwang Hyeon Baik, Hydrogen sensing characteristics of Pt Schottky diode on nonpolar m-plane  GaN single crystals, Thin Solid films, 660, 646 (2018)

12. Soohwan Jang, Sunwoo Jung, Jihyun Kim, F. Ren, Stephen. J. Pearton, Kwang Hyeon Baik, Hydrogen Sensing Characteristics of Pt Schottky Diodes on (-201) and (010) Ga2O3 Single Crystals, ECS J. Solid State Sci. Technol. 7, Q3180 (2018)

13. S. Jung, K. H. Baik, F. Ren, S. J. Pearton, Soohwan Jang, AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications, ECS J. Solid State Sci. Technol. 7, Q3020 (2018)

14. K. H. Baik, S. Jung, F. Ren, S. J. Pearton, Soohwan Jang, Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability, ECS J. Solid State Sci. Technol. 7, Q3009 (2018)

15. K. H. Baik, J. Kim, Soohwan Jang, Hydrothermal growth and luminescent properties of nonpolar a-plane (11−20) ZnCdO films for light-emitting diodes, Appl. Surf. Sci. 435, 592 (2018)

16. S. Jang, S. Jung, K. Beers, J. Yang, F. Ren, A. Kuramata, S. J. Pearton, K. H. Baik, A comparative study of wet etching and contacts on (-201) and (010) oriented β-Ga2O3, J. Alloy. Comp. 731, 118 (2018)

17. G. Yang, Soohwan Jang, F. Ren, S. J. Pearton, J. Kim, Influence of high-energy proton irradiation on β‑Ga2O3 nanobelt field-effect transistors, ACS Appl. Mater. Interfaces, 9, 40471 (2017)

18. K. H. Baik, M. Lee, S. Jang, Ohmic contact properties of nonopolar (10-10) m-plane bulk GaN Crystals, Sci. Adv. Mater. 9, 1983 (2017)

19. J. Yang, P. H. Carey IV, F. Ren, Y. Wang, M. L. Good, S. Jang, M. A. Mastro, S. J. Pearton, Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures, Appl. Phys. Lett. 111, 202104 (2017)

20. S. Jung, K. H. Baik, F. Ren, S. J. Pearton, S. Jang, Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing, IEEE Sens. J. 17, 5817 (2017)

21. P. H. Carey, J. Yang, F. Ren, D. C. Hays, S. J. Pearton, S. Jang, A. Kuramata, I. I. Kravchenko, Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au, AIP Adv. 7, 095313 (2017)

22. S. Jung, K. H. Baik, F. Ren, S. J. Pearton, S. Jang, Detection of ammonia at low concentrations (0.1–2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors, J. Vac. Sci. Technol. B, 35, 042201 (2017)

23. S. Jung, K. H. Baik, F. Ren, S. J. Pearton, S. Jang, Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing, J. Electrochem. Soc. 164, B417 (2017)

24. P. H. Carey IV, F. Ren, D. C. Hays, B.P. Gila, S. J. Pearton, S. Jang, A. Kuramata, Band offsets in ITO/Ga2O3 heterostructures, Appl. Surf. Sci. 422, 179 (2017)

25. P. H. Carey IV, F. Ren, D. C. Hays, B.P. Gila, S. J. Pearton, S. Jang, A. Kuramata, Band alignment of atomic layer deposited SiO2 and HfSiO4 with  β-Ga2O3, Jpn. J. Appl. Phys. 56, 071101 (2017)

26. G. Lee, S. Jung, S. Jang, J. Kim, Platinum-functionalized black phosphorus hydrogen sensors, Appl. Phys. Lett. 110, 242103 (2017)

27. J. Ha, Y. S. Song, S. Jung, S. Jang, Y. Kim, S. J. Bai, J. Park. S. Lee, Novel microbial photobioelectrochemical cell using an invasive ultramicroelectrode array and a microfluidic chamber, Biotechnol Lett. 39, 849 (2017)

28. P. H. Carey, F. Ren, D. C. Hays, B. P. Gila, S. J. Pearton, S. Jang, A. Kuramata, Conduction and valence band offsets of LaAl2O3 with  β−Ga2O3, J. Vac. Sci. Technol. B, 35, 041201 (2017)

29. P. H. Carey, F. Ren, D. C. Hays, B. P. Gila, S. J. Pearton, S. Jang, A. Kuramata, Band alignment of Al2O3 with  β−Ga2O3, Vacuum, 142, 52 (2017)

30. P. H. Carey, F. Ren, D. C. Hays, B. P. Gila, S. J. Pearton, S. Jang, A. Kuramata, Valence and conduction band offsets in AZO/Ga2O3 heterostructures, Vacuum, 141, 103 (2017)

31. S. Jung, K. H. Baik, S. Jang, S. Jung, K. H. Baik, S. Jang, GaN Based Carbon Dioxide Sensor, ECS Trans. 77, 121 (2017)

32. S. Jung, K. H. Baik, S. Jang, GaN Based Hydrogen Sensor in Humid Ambient, ECS Trans. 77, 33 (2017)

33. S. Jang, S. Jung, J. Park, S. Kim, K. H. Baik, Terahertz Dielectric Response of Nonpolar a-plane GaN Films, ECS Trans. 77, 127 (2017)

34. J. Yang, S. Ahn, F. Ren, S. J. Pearton, S. Jang, J. Kim, A. Kuramata, High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3, Appl. Phys. Lett. 110, 192101 (2017)

35. S. Jung, K. H. Baik, F. Ren, S. J. Pearton, S. Jang, Pt-AlGaN/GaN hydrogen sensor with water-blocking PMMA layer, IEEE Electron Device Lett. 38, 657 (2017)

36. S. Jang, S. Lee, K. H. Baik, Anisotropic electrical conductivity of surface-roughened semipolar  GaN films by photochemical etching, Jpn. J. Appl. Phys. 56, 051001 (2017)

37. S. Kim, K. H. Baik, S. Jang, GaN based ethanol sensor, ECS Trans. 75, 9 (2017)

38. K. H. Baik, J. Kim, S. Jang, Highly sensitive nonpolar a-plane GaN based hydrogen diode sensorwith textured active area using photo-chemical etching, Sens. Actuators B, 238, 462 (2017)

39. Y. Jung, S. Jang, K. H. Baik, H. Kim, J. Kim, Chemical etching behavior of non-polar GaN sidewalls, J. Cryst. Growth, 456, 108 (2016)

40. J. Kim, S. Hwang, Y. G. Seo, J. Song, K. Park, J. Park, S. Jang, K. H. Baik, Carrier localization in basal-plane stacking faults in Si-Doped nonpolar a-Plane  GaN epilayers containing different defect densities, J. Nanosci. Nanotechnol.16, 11591 (2016)

41. S. Jang, J. Park, S. Kim, K. H. Baik, Dielectric response of nonpolar a-plane  ZnO crystals in the terahertz frequency, J. Nanosci. Nanotechnol.16, 11599 (2016)

42. S. Jang, J. Kim, K. H. Baik, Enhanced Hydrogen Detection Sensitivity of Semipolar  GaN Schottky Diodes by SurfaceWet Etching on Schottky Contact, J. Electrochem. Soc. 163, B456 (2016)

43. K. H. Baik, J. Kim, S. Jang, Improved GaN based Hydrogen Sensors, ECS Trans. 72, 23 (2016)

44. E. Kim, J. Kim, S. Jang, Evaluation of green light Emitting diode with p-type GaN interlayer, Korean Chem. Eng. Res. 54, 274 (2016)

45. J. Kim, K. H. Baik, S. Jang, Schottky contact on hydrothermally grown a-plane ZnO for hydrogen sensing and UV detection, Curr. Appl. Phys. 16, 221 (2016)

46. 43.  S. Jang, P. Son, J. Kim, S. Lee, K. H. Baik, Hydrogen sensitive Schottky diode using semipolar  AlGaN/GaN heterostructures, Sens. Actuators B, 222, 43 (2016)

47. S. Jang, P. Son, J. Kim, S. Lee, K. H. Baik, K doping effect on structural and optical properties of ZnO nanorods grown on semipolar GaN films using a hydrothermal growth method, Opt. Mater. Express, 5, 231271 (2015)

48. J. Kim, K. H. Baik, S. Jang, Hydrothermally Grown Nonpolar a-plane ZnO and Its Applications, ECS Trans. 66, 157 (2015)

49. Y. G. Seo, J. Kim, S. Hwang, J. Kim, S. Jang, H. Kim, K. H. Baik, Lattice Distortion Analysis of Nonpolar a-plane  GaN Films by Using a Grazing-Incidence X-Ray Diffraction Technique, J. Korean. Phys. Soc. 66, 607 (2015)

50. P. Son, K. H. Baik, S. Jang, Investigation on Hydrothermal Growth of a-Plane ZnO Using Epitaxial Lateral Overgrowth, ECS Solid State Lett. 4, Q1 (2015)

51. Kwang Hyeon Baik, Hyonwoong Kim, Soohwan Jang, Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film, Thin Solid films, 569, 1 (2014)

52. Hyonwoong Kim, Kwang Hyeon Baik, F. Ren, S.J. Pearton, Soohwan Jang, Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes, ECS Trans. 61, 353 (2014)

53. Kwang Hyeon Baik, Hyonwoong Kim, Sung-Nam Lee, Eunju Lim, S. J. Pearton, F. Ren, Soohwan Jang, Hydrogen sensing characteristics of semipolar (11-22) GaN Schottky diodes, Appl. Phys. Lett. 104, 072103 (2014)

54. Soohwan Jang, Hyonwoong Kim, Doo Soo Kim, Sung-Min Hwang, Jihyun Kim, Kwang Hyeon Baik, Investigation of carrier transport properties in semipolar GaN films with low defect density, Appl. Phys.Lett. 103, 162103 (2013)

55. Hyonwoong Kim, Soohwan Jang, AlGaN/GaN HEMT based hydrogen sensor with platinum nanonetwork gate electrode, Curr. Appl. Phys. 13, 1746 (2013)

56. Kwang Hyeon Baik, Hyonwoong Kim, Jihyun Kim, Sukkoo Jung, Soohwan Jang, Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN, Appl. Phys.Lett. 103, 091107 (2013)

57. Jihoon Kim, Yong Gon Seo, Sung-Min Hwang, Soohwan Jang, Kwang Hyeon Baik, Analysis of the Modified Williamson-Hall Plot of Non-polar a-plane GaN Films, J. Korean. Phys. Soc. 62, 601 (2013)

58. Byung-hwan Chu, Byung Doo Chin, Kwang Hyeon Baik, Stephen J. Pearton, Fan Ren, Soohwan Jang, Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition, Jpn. J. Appl. Phys, 51, 09MH04 (2012)

59. Doo Jin Lee, Ki Yeon Cho, Soohwan Jang, Young Seok Song, Jae Ryoun Youn, Liquid Slip on a Nanostructured Surface, Langmuir, 28, 10488 (2012)

60. Hyonwoong Kim, Wantae Lim, Jae-Hoon Lee, S.J. Pearton, F. Ren, Soohwan Jang, Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum Nanonetworks, Sens. Actuators B, 164, 64 (2012)

61. E.A. Douglas, C.Y. Chang, B.P. Gila, M.R. Holzworth, K.S. Jones, L. Liu, Jinhyung Kim, Soohwan Jang, G.D. Via, F. Ren, S.J. Pearton, Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors, Microelectron. Reliab., 52, 23 (2012)

62. Byung-Jae Kim, Hong-Yeol Kim, Jihyun Kim, Soohwan Jang, Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates, J. Cryst. Growth, 326, 205, (2011)

63. Hong-Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas Jr., Soohwan Jang, Jennifer Hite, Charles R. EddyJr., Jihyun Kim, Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons, J. Cryst. Growth, 326, 62, (2011)

64. E. A. Douglas, C. Y. Chang, D. J. Cheney, B. P. Gila, C.F. Lo, L. Lu, R. Holzworth, P. Whiting, K. Jones, G.D. Via, J. H. Kim, Soohwan Jang, F. Ren and S. J. Pearton, AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress, Microelectron Reliab. 51, 207, (2011)

65. C. F. Lo, T. S. Kang, L. Liu, F. Ren, S. J. Pearton, J. H. Kim, Soohwan Jang, O. Laboutin, Y. Cao and J. W. Johnson, Effects of silicon nitride passivation on isolation-blocking voltage in AlGaN/GaN High electron mobility transistors, J. Vac. Sci. Technol. B 29, 031211, (2011)

66. L. Liu, T. S. Kang, D. A. Cullen, L. Zhou, J. H. Kim, C. Y. Chang, E.A. Douglas, Soohwan Jang, D. J. Smith, S. J. Pearton, W. J. Johnson and F. Ren, Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors, J. Vac. Sci. Technol. B 29, 032204, (2011)

67. C. Y. Chang, E. A. Douglas, J. H. Kim, L. Lu, C. F. Lo, B. H. Chu, D. J. Cheney, B. P. Gila, F. Ren, G. D. Via, D. A. Cullen, L. Zhou, D. J. Smith, Soohwan Jang and S. J. Pearton, Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors, IEEE T. Device Mat. Re. 11, 187, (2011)

68. H. Y Kim, J. H. Kim, F. Ren and S. Jang, Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes, J. Vac. Sci. Technol. B 28, 27, (2010)

69. S. Jang, Influence of perfluorinated polymer passivation on AlGaN/GaN high electron mobility transistors, Korean Chem. Eng. Res. 48, 1, (2010)

70. B. Kim, J. Bang, Soohwan Jang, D. Kim and J. Kim, Surface texturing of GaAs using a nanosphere lithography technique for solar cell applications, Thin solid films 518, 6583, (2010)

71. C. Y. Chang, T. Anderson, J. Hite, L. Lu, C. F. Lo, B. H. Chu, D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, P. Whitning, R. Holzworth, K. S. Jones, Soohwan Jang and S. J. Pearton, Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors, J. Vac. Sci. Technol. B 28, 1044, (2010)

72. Y. H. Jung, J. H. Kim, S. Jang, K. H. Baik, Y. G. Seo and S. M. Hwang, Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching, Opt. Express 18, 9728, (2010)

73. Y. L. Wang, F. Ren, W. T. Lim, S. J. Pearton, K. H. Baik, S. M. Hwang, Y. G. Seo and Soohwan Jang, Hydrogen sensing characteristics of non-polar a-plane GaN schottky diodes, Curr. Appl. Phys. 10, 1029, (2010)

74. K. H. Baik, Y. G. Seo, J. B. Kim, S. M. Hwang, W. T. Lim, C. Y. Chang, S. J. Pearton, F. Ren and Soohwan Jang, Ohmic contact properties of non-polar a-plane GaN films on γ-plane sapphire substrates, J. Phys. D Appl. Phys. 43, 1, (2010)

75. C. F. Lo, C. Y. Chang, B. H. Chu, H. Y. Kim, J. Kim, D. A. Cullen, L. Zhou, D. J. Smith, S. J. Pearton, A. Dabiran, B. Cui, P. P. Chow, Soohwan Jang and F. Ren, Proton irradiation effects on AlN/GaN high electron mobility transistors, J. Vac. Sci. Technol B 28, 47, (2010)

76. C. F. Lo, H. Y. Kim, J. Kim, S. H. Chen, S. Y. Wang, J. I. Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, Soohwan Jang and F. Ren, Proton irradiation effects on Sb-based heterojunction bipolar transistors, J. Vac. Sci. Technol. B 27, 33, (2009)

77. S. Jang, B.S. Kang, F. Ren, N.W. Emanetoglu, H. Shen, W. H. Chang, B.P. Gila, M. Hlad and S. J. Pearton, Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 um Metal-Semiconductor-Metal Photo-Detector Applications, J. Electrochem. Soc, 154, 336 (2007).

78. S. Jang, F. Ren, N. Emanetoglu, H. Shen, W. Chang, S. J. Pearton, Design of Transparent Indium Tin Oxide Based Inter-Digitated Fingers for Metal Semiconductor Metal Photodetector, J. Electrochem. Soc, 154, 830, (2007).

79. Tienyu Chang, Wenhsing Wu, Jenshan Lin, Soohwan Jang, Fan Ren, Stephen Pearton, Robert Fitch, and James Gillespie, Analysis and Design of AlGaN/GaN HEMT of Resistive Mixers, Microwave and optic. Tech. Lett. 49, 1152, (2007)

80. J.S. Wright, Rohit Khanna, L.F. Voss, L. Stafford, B.P. Gila, D.P. Norton, S.J. Pearton, Hung-Ta Wang, S. Jang, T. Anderson, J.J. Chen, B.S. Kang, F. Ren, H. Shen, Jeffrey R. LaRoche, Kelly Ip, Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO, App. Surface Sci., 253, 3766, (2007).

81. Soohwan Jang, F. Ren, S.J. Pearton, B.P. Gila, M. Hlad, C.R. Abernathy, Hyucksoo Yang, C.J. Pan, Jenn-Inn Chyi, P. Bove, H. Lahreche, J. Thuret, Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications, Journal of Electric Materials, 35, 685, (2006).

82. B.P. Gilla, G.T. Thaler, A.H. Onstine, M.Hlad, A.Gerger, A.Herrero, K.K. Allums, D.Stodilka, S. Jang, B.Kang, T. Anderson, C.R.Abernathy, F.Ren, S.J. Peartton, Novel dielectrics for gate oxides and surface passivation on GaN, Solide-State Electronics,  50, 1016, (2006).

83. Sangwon Ko, Wenhsing Wu, Jenshan Lin, Soohwan Jang, Fan Ren, Stephen Pearton, Robert Fitch, James Gillespie, A High Efficiency Class-F Power Amplifier Using AlGaN/GaN HEMT, Micro Wave and Optical Technology Letters, 48, 1955, (2006).

84. Chih-Yang Chang, Tian-Wey Lan, Gou-Chung Chi, Li-Chyong Chen, Kuei-Hsien Chen, Jau-Juin Chen, Soohwan Jang, F. Ren, S. J. Peartone, Effect of Ozone Cleaning and Annealing on Ti/Al/Pt/Au OhmicContacts on GaN Nanowires, Electrochemical and Solid-State Letters, 9, 155, (2006).

85. Hung-Ta Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, A. Herrero, A.M. Gerger, B. P. Gila, S. J. Pearton, H. Shen, Jeffrey R. LaRoche, Kurt V. Smith, Improved Au Schottky contacts on GaAs using cryogenic metal deposition, J. Vac. Sci. Technol. B, 24, 1799, (2006).

86. Hung-Ta Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, L. F. Voss, L. Stafford, R. Khanna, B. P. Gila, J. Pearton, H. Shen, Jeffrey R. LaRoche, Kurt V. Smith, Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition, Applied Physics Letters, 89, 122106, (2006).

87. Soohwan Jang, J. J. Chen, F. Ren, Hyuck-Soo Yang, Sang-Youn Han, D. P. Norton, S. J. Pearton, Simulation of vertical and lateral ZnO light-emitting diodes, J. Vac. Sci. Technol. B, 24, 690, (2006).

88. Hung-Ta Wang, B. S. Kang, Jau-Jiun Chen, T. Anderson, S. Jang, F. Ren, H. S. Kim, Y. J. Li, D. P. Norton, S. J. Pearton, Band-edge electroluminescence from N+- implanted bulk ZnO, Applied Physics Letters, 88, 102107, (2006).

89. Lopatiuk-Tirpak, W. V. Schoenfeld, L. Chernyaka, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, S. J. Pearton, A. Osinsky, P. Chow, Carrier concentration dependence of acceptor activation energy in p-type ZnO, Applied Physics Letters, 88, 202110, (2006).

90. J.J. Chen, Soohwan Jang, T. J. Anderson, F. Ren, Yuanjie Li, Hyun-Sik Kim, B. P. Gila, D. P. Norton, S. J. Pearton, Low specific contact resistance Ti/Au contacts on ZnO, Applied Physics Letters, 88, 122107, (2006).

91. J.J. Chen, Soohwan Jang, F. Ren, Y.Li, H. Kim, D.P. Norton, S.J. Pearton, A. Osinsky, S. N. G. Chu, J. F. Weaver, Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO, Jounal of Electronic Materials, 35, 516, (2006).

92. Jau-Jiun Chen, Soohwan Jang, F. Ren, S. Rawal, Yuanjie Li, Hyun-Sik Kim, D. P. Norton, S. J. Pearton, A. Osinsky, Comparison of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO, Appiled Physics Letters, 88, 12109, (2006).

93. Jau-Jiun Chen, Soohwan Jang, F. Ren, S. Rawal, Yuanjie Li, Hyun-Sik Kim, D.P. Norton, S.J. Pearton, A. Osinsky, Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO, Applied Surface Science, 253, 746, (2006).

94. K. Ip, G.T. Thaler, Hyucksoo Yang, Sang Youn Han, Yuanjie Lia, D. P. Norton, S.J. Pearton, Soowhan Jang, F. Ren, Contacts to ZnO, Journal of Crystal Growth, 287, 149, (2006).

95. B.P. Gila, M, Hlad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. J. Pearton, T. Anderson, S. Jang, F. Ren, N. Moser, R. C. Fitch, M. Freund, Improved oxide passivation of AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 87, 163503, (2005).

96. J. Kim, J. A. Freitas, P.B. Klein, S, Jang, F. Ren, S. J. Pearton The effect of thermally induced stress on device temperature measurements by Raman spectroscopy. Electrochemical and Solid-State Letters, 8, 345, (2005).

97. Hyuck Soo Yang, Sang Youn Han, M. Hlad, B. P. Gila, K. H. Baik, S. J. Pearton, Soohwan Jang, B. S. Kang, F. Ren, Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs, Journal of Semiconductor Technology and Science, 5, 131, (2005).

98. B.S. Kang, J. Kim, S. Jang, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N. G. Chu, K. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton,Capacitance pressure sensor based on GaN highelectron-mobility transistor-on-Si membrane. Applied Physics Letters, 86, 253502, (2005).

99. Soohwan Jang, Chen, Jau-Jiun, Kang, B. S., Ren, F., Norton, D. P., Pearton, S. J., Lopata, J., Hobson, W. S. Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source. Applied Physics Letters, 87, 222113, (2005).

100. Hyuck SooYang, Y. Li, D.P Norton, K. Ip, S. J. Pearton, Soohwan Jang, F. Ren, Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition. Applied Physics Letters, 86, 192103, (2005).

*Book Chapter*

1. S. Jung, S. Jang, K.Baik, Ga2O3-based Gas sensors in Gallium oxide Technology, Devices, and Applications, Elsevier, 2019

2. J. Yang, P. H. Carey IV, S. Ahn, F. Ren, S. Jang, S. J. Pearton, A. Kuramata, Advances in Ga2O3 Materials, Devices and Processing, In Horizons in World Physics, Vol. 292, Nova Science Publishers, 2017

3. K. H. Baik and S. Jang, GaN-Based Hydrogen Sensors, In Semiconductor-Based Sensors, World Scientific. 2017.

*REFERENCES*

Dr. Fan Ren, Professor, Chemical Engineering, University of Florida, Gainesville, FL, Email: ren@che.ufl.edu, Ph: +1-352-392-4727.

Dr. S. J. Pearton, Professor, Material Science and Engineering, University of Florida, Gainesville, FL, Email: spear@mse.ufl.edu, Ph: +1-352-846-1086.

Dr. Jae Jung Kim, Professor, Chemical Engineering, Seoul National University, Seoul, Korea, Email: jjkimm@snu.ac.kr , Ph:+82-2-880-8863.