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Welcome to DKU Semiconductor Device Processing Lab!

                  SEM IMAGE OF ZINC OXIDE NANOROD                                                                                                         SEM IMAGE OF LANTHANUM OXIDE NANOWIRE

RESEARCH INTERESTS

1. Gas Sensors

- Highly sensitive  nonpolar and semi-polar GaN hydrogen sensors using photo-chemical etching was developed.

- Hydrothermally grown a-plane ZnO hydrogen sensor was demonstrated.

- AlGaN/GaN HEMT based hydrogen sensors using Pt nano-networks with large surface to volume ratio were developed.

- Dependence of crystal plane and polarity in GaN on hydrogen sensing was investigated.

2. Light Emitting Diodes

- Nonpolar a-plane n-type ZnO (grown by facile solution method) / p-GaN hybrid LED was realized.

- Organic LED with improved cryogenic LiF/Al electrode was developed.

- Self-annealing process of neutron irradiated InGaN/GaN LEDs was investigated.

3. GaN based RF and Power Devices

- Degradation mechanisms of AlGaN/GaN high electron mobility transistor (HEMT) were elucidated.

- Effects of neutron and proton irradiation on GaN based HEMTs were investigated.

- Enhancement mode GaN metal oxide semiconductor (MOSFET) using Si diffusion was developed.

4. InGaAs based Photodetectors

- Optimal design of InGaAs based metal semiconductor metal (MSM) photodector was established.

- Effect of transparent ITO electrode on MSM photodetector was investigated.

Conference

Memories

June.2023

DEC.2022

Semiconductor Device Processing Laboratory

Room #224 Engineering Building #3

Office: 82-31-8005-3577

126, Jukjeon-ro, Suji-gu, Yongin-si Gyeonggi-do, 448-701, Korea