Journal papers

<In preparation>

1. 1. Y. B. Kang,.........., D. -M. Geum*, "Degradation of ~~~~~~~~~~~~~", in preparation.

   2. W. S. Byun,...........D. -M. Geum*,  "Characteristics of IGZO~~~~~~~~~~~", in preparation.

   3. Y. B. Kang.........., D. -M. Geum*, "Size dependent~~~~~~~~~~", in preparation.

   4. G. W. Lee.........., D. -M. Geum*, "Optimization of capping~~~~~~~~~~", in preparation.

   5. Y. H. Kim.............D. -M. Geum*, "Back channel ~~~~~~~~~~~~~", in preparation.

   6. S. J. Yoo,.........................D. -M. Geum*, "InGaN/GaN microLEDs~~~~~~~", in preparation.

<2026>

1. 7. W. S. Byun,.........S. H. Shin, D. -M. Geum*, "High-k dielectrics for IGZO~~~~~~~~~~~", to be submitted.

   8. S.Y. Han, ................ D. -M. Geum*, "Pulsed I-V characteristics of HEMT~~~", to be submitted.

   9. S. J. Yoo,.........................D. -M. Geum*, "Passivation~InGaN/GaN microLEDs~~~~~~~", to be submitted.

   10. S. C. Lee, D. -M. Geum*, H.S. Kim*, "Deep ridge~~", Under review.

   11. W. Byun, T. H. Kil, B. H. Kim, Y. S. Kim,  H. Y. Park*, J. Y. Park*, D. -M. Geum*, "Simultaneous ~~~~", Under review.

   12. Y. B. Kang+, J. H. Park+, S. H. Kim*, D. -M. Geum*, "AlGaInP microLED~~~~~", Under review.

   13. [JCR ranking <1%, IF=40.6] J. H. Park, W. Baek, H. Kim, D. Jung, H. Kim, B. Kim, Y. -H. Cho, J. Lee, S. -W. Lim, S. -H. Lee, S. Ahn, S. -K. Kim, J. Jeong, J. -P. Kim, J. Lim, J. Shim, D. -M. Geum*, S. H. Kim**,"A monolithic three-dimensional integrated red micro-LED display on silicon using AlInP/GaInP epilayers", Nature Electronics, (2026)

   14. S.Y. Han+, J. M. Woo+, B. J. Oh, W. Byun, M. S. Park*, D. -M. Geum**, "Implementation of Enhancement-Mode InGaAs/InAlAs HEMTs by Hole Delta-Doping in a Buffer-Layer: A Simulation Study ", just Accepted in Current Applied Physics.

   15. Y. B. Kang+, H. J. Jeong+, W. S. Byun, S. Y. Han, C. M. Kang*, D. -M. Geum**,"Quantitative analysis of substrate effects on thermal characteristics in InGaN/GaN-based micro-LEDs", Semiconductor Science and Technology, just Accepted.

   16. S. Y. Han, W. S. Byun, Y. B. Kang, T. H. Kil, J. Y. Park, H. Jang, D. Park, Y. Koh, J. P. Shim*, D. -M. Geum*,"Impact of High-Pressure Annealing on Characteristics of InGaAs/InAlAs Metamorphic High-Electron Mobility Transistors, Applied Physics Letters, 128, p.033502, (2026)

   17. H. Ryu*, D. -M. Geum, "Modeling of internal quantum efficiency in micro-LEDs with surface nonradiative recombination", Optics Express, 34(1), pp.219-232, (2026)

<2025>

1. 18. W. Byun+, B. -H. Kim+, S. Han, Y. Kang, S. -H. Kim, I. -H. Baek*, D. -M. Geum*, "Oxygen Ambient Annealing-Driven Contact Engineering and Channel Property Modulation in Tungsten/InGaZnO Thin-film Transistors for BEOL-Compatible Integration", Result in Physics, 78, p.108468, (2025).

   19. S. Choi, Y. Kim, H. Jo,  H. Kang, J. Ryu*, D. -M. Geum*, H. Y. Park*, “Tailoring Surface Chemistry for Area-Selective HfO2 Films: Experimental and DFT Insights”, Surfaces and Interfaces, 73(15), p.107552, (2025) 

   20. H. S. Kim, M. Lee, D. -M. Geum*, Y. H. Ko*, "Growth Behaviors of InAs/GaAs Quantum Dots Using Metal-Organic Chemical Vapor Deposition with Dual-Channel AsH3 Supply and H2 Carrier Gas Flow Rate Variation", Crystal Growth & Design, 25(16), pp6628-6635, (2025)

   21. W. -J. Baek, J. Park, H. -S. Kim, D. -M. Geum, J. -H. Min, T. -H. Chung, S. -H. Kim*, "Insight on Self-emissive μLEDs Display from Correlation between Surface Current and Efficiency/Emission Properties of Size-dependent μLEDs", ACS Photonics, 12, p. 3525 (2025) 

   22. H. -R. Lim, S. -K. Kim, S. W. Lee, Y. Park, J. Jeong, H. Jeong, J. Lim, D. -M. Geum, J. -H. Han, Y. Kim, J. Jeong, B. -J. Cho, S. -H. Kim*, "Heterogeneous 3D Sequential CFET with Strain-Engineered Ge (100) Top-Channel pMOSFET on Bulk Si (100) nMOSFET", IEEE Transactions on Electron Devices, 72, p. 3422 (2025)  

   23. H. Y. Park+, D. -M. Geum+, H. J. Kim, "Accelerating Hydrogen Evolution Catalyst Discovery via Data-Driven Strategy for High-Performance Single Atom Catalysts Embedded in h-BN", Journal of Energy Chemistry, 107, pp.750-758, (2025)

   24. H. -S. Kim, J. Park W. -J. Baek, D. -M. Geum, I. Kim, H. -R. Lim, J. Lim, S. -K. Kim, J. Jeong, J. Shim, J. -H. Min, S. -H. Kim*, "Heterogeneous and Monolithic 3D integrated Full-Color Micro-Light-Emitting Diodes via CMOS-Compatible Oxide Bonding for µLEDoS", Laser & Photonics Review, 2402116 (2025)

   25. W. -J, Baek, J, -P. Kimm S. -H. Kuk, J. Park, H. -S. Kim, D. -M. Geum, S. -H. Kim*, "Field-Effect Passivation of GaN-based Blue Micro-light-emitting Diodes",  IEEE Journal of the Electron Device Society 13, p. 303 (2025)

   26. J. Shim, J. Lim, I. Kim, J. Jeong, B. -H. Kim, S. -K. Kim, D. -M. Geum, S. -H. Kim*, "Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications", Light: Science & Applications 14, 125 (2025)

   27. S. -Y. Ahn+, J. Lim+, D. -M. Geum, D. Gwak, K. -K. Kang, J. -H. Eom, Y. -H. Kim, S. -H. Kim*, "Enhanced Broadband Quantum Efficiency in LWIR T2SL Detectors with Guided-Mode Resonance Structure", Optics Express, 33, p.1898 (2025)

<2024>

1. 28. J. Jang, D. -M. Geum, I. -S. Kang, Y. -W. Oh, S. Jung, H. Cho, S. -H. Kim*, "Guided-mode resonance polarization-sensitive narrowband InGaAs photodetector", Laser & Photonics Review, 2401253 (2024)

   29. J. Jeong, S. -K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. -P. Kim, B. -H. Kim, J. Park, J. Shim, N. Rheem, C. -J. Lee, Y. Jo, D. -M. Geum, S. -Y. Park, J. Kim, S. -H. Kim*, "Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms", Nature communications 15, 10809 (2024)

   30. D. M. Geum+, J. H Lim+, J. Jang, S. Y. Ahn, S. K. Kim, J. Shim, B. H. Kim, J. H. Park, W. J. Baek, J. Jeong, and S. H. Kim*, "Highly-efficient (>70%) and Wide-spectral (400 nm -1700 nm) sub-micron-thick InGaAs photodiodes for future high resolution image sensors" Light. Science and Applications, 13, 311, (2024) (IF: 20.6, JCR ranking <3%) NEWS: 아시아경제, 이뉴스투데이

   31. J. Lim, J. -S. Shim, I. Kim, S. -K. Kim, D. -M. Geum, S. -H. Kim*, "Thermally Tunable Microring Resonators based on Germanium-on-Insulator for Mid-Infrared Spectrometer", APL Photonics, 9, 106109 (2024)

   32. J. Lim, J. Shim, I. Kim, S. -K. Kim, H. -R. Lim, S. -Y. Ahn, J. Park, D. -M. Geum, S. -H. Kim*, "Ultrasensitive mid-infrared optical gas sensor based on Germanium-on-insulator photonic circuits with limit-of-detection of sub-ppm level", ACS Photonics, 11, p. 3907 (2024) 

   33. J. Park+, E. -J. Youn+, W. -J. Baek, E. -K. Chu, H. -S. Kim, D. -M. Geum, J. -P. Kim, B. -H. Kim, S. -H. Kuk, H. -H. Park*, and S. -H. Kim*, "Size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs on 4-inch Si substrates: High-resolution pixel arrays demonstration", Optics Express 32, p. 24242 (2024)

   34. J. Jeong, S. -K. Kim, Y. -J. Suh, J. Shim, W. -J. Beak, S. -J. Choi, J. -P. Kim, B. -H. Kim, D. -M. Geum, J. Kim, S. -H. Kim*, "Thermal Studies of 3D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect using Buried Metal Insertion",  IEEE Transactions on Electron Devices 71, p. 4517 (2024)

   35. S. S. Kang, I. P. Roh, S. H. Kim, M. H. Kang, D. -M. Geum*, J. D. Song*, "High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector", Journal of Alloys and Compounds, 989(25), p174255 (2024)

   36. S. -H. Kuk, S. -J. Choi, H. -Y. Kim, K. Ko, J. Jeong, D. -M. Geum, J. -H. Han, J. -H. Park, D. Jeon, S. -H. Kim*, "Heavily-Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET ", IEEE Transactions on Electron Devices, in press

   37. H. S.  Kim, S. C. Lee, Y. H. Ko, J. T. Ahn, K. J. Kim, D. J. Kim, D. -M. Geum*, W. S. Han*, "High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer ", Journal of Alloys and Compounds, 983(5), p.173823 (2024)

   38. S. -K. Kim, H. -R. Lim, J. -J. Jeong, S. -W. Lee, H. -J. Jeong, J. Park, J. -P. Kim, J. Jeong, B. -H. Kim, S. -Y. Ahn, Y. Park, D. -M. Geum, Y. Kim, Y. Baek, B. -J. Cho, S. -H. Kim*, " Heterogeneous 3D Sequential CFETs with Ge (110) Nanosheet p-FETs on Si (100) bulk n-FETs", IEEE Transactions on Electron Devices 71, p. 393 (2024) 

<2023>

1. 39. B- H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, C. -J. Lee, D. -M. Geum, Y. -J. Yoon, S. -H. Baek, S. -H. Kim*, "Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics", Advanced Electronic Materials, 2300327 (2023)

   40. W. -J. Baek, J. -H. Park, J. Shim, B. -H. Kim, S. Park, H. -S. Kim, D. -M. Geum*, and S. -H. Kim*, "Ultra-Low-Current Driven InGaN Blue Micro Light-Emitting Diodes for Electrically Efficient and Self-Heating Relaxed Microdisplay", Nature communications, 14, 1386 (2023)  Editor's highlights in Nat. Comm. News:전자신문, 베리타스 알파

   41. B- H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, S. -H. Kim*, "Oxygen Scavenging in HfZrOx-based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement", Advanced Electronic Materials, 2101257 

   42. B. -H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, S. -H. Kim*, "Effect of Scandium Insertion into the Gate Stack of Ferroelectric Field-Effect Transistors", IEEE Transactions on Electron Devices, 70, p. 1996 (2023) 

   43. J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, S.- H. Kim*, "Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Devices for Monolithic 3D RF Applications", IEEE Electron Device Letters, 44, p. 598 (2023) 

   44. J. Lim, J. Shim, I. Kim, S. -K. Kim, H. -R. Lim, S. -Y. Ahn, J. Park, D. -M. Geum, S. -H. Kim*, "Low-Loss and High-Confinement Photonic Platform based on Germanium-on-Insulator at Mid-Infrared Range for Optical Sensing", IEEE Journal of Lightwave Technology, 41, p. 2824 (2023)  (Supplementary material) 

<2022>

1. 45. J. -H. Park, W. -J. Baek, D. -M. Geum*, S. -H. Kim*, "Understanding the sidewall passivation effects in AlGaInP/GaInP micro-LED", Nanoscale Research Letters 17, 29 (2022)

   46. H. S. Kim, D. M. Geum, Y. H. Ko, W. S. Han, "Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si", Nanoscale Research Letters, 17(1), p.126 (2022)

   47. J. –S. Shim, J. -H. Lim, D. -M. Geum, J. -B. You, H. Yoon, J. Kim, W. -J. Baek, I. Kim, J. -H. Han, S. -H. Kim*, "High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors", Optics Express 23, p. 42663 (2022)

   48. J. -P. Kim+, J. Sim+, P. Bidenko, D. -M. Geum, S. -K. Kim, J. Shim, J. Kim*,  S. -H. Kim*, "Capacitor-less 4F2 DRAM using Vertical InGaAs Junction for Ultimate Cell Scalability", IEEE Electron Device Letters 43, p. 1834 (2022) (featured in SemiconductorTODAY)

   49. [Review] J. -Y. Jeong+, D. -M. Geum+, S. -H. Kim*, "Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs", Electronics 11, 3013 (2022) 

   50. B. -H. Kim, S. -H. Kuk. S. -K. Kim, J. -P. Kim, D. -M. Geum, S. -H. Baek, and S. -H. Kim*, "Oxygen Scavenging of HfZrO2-Based Capacitors for Improving Ferroelectric Properties", Nanoscale Advances 4, p. 4114 (2022)

   51. J.- Y. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, D. Kim, E. Jo, H. Jeong, J. Park, J. -H. Jang, S. Choi, I. Kwon*, S. -H. Kim*, "Heterogeneous and monolithic 3D integration of III-V-based RF devices on Si CMOS circuits", ACS Nano 16, p. 9031 (2022) (selected as a supplementary cover)

   52. J. Lim, J. -S. Shim, D. -M. Geum, and S. -H. Kim*, "Experimental demonstration of Germanium-on-silicon slot waveguides at mid-infrared wavelength", IEEE Photonics Journal 14, 5828709 (2022)

<2021>

1. 53. J. –S. Shim, J. -H. Lim, D. -M. Geum, J. -B. You, H. Yoon, J. Kim, W. -J. Baek, J. -H. Han, S. -H. Kim*, “ TiOx/Ti/TiOx Tri-layer Film-based Waveguide Bolometric Detector for On-chip Si Photonic Sensor”, IEEE Transactions on Electron Devices 69, p. 2151 (2022) (Special issue for the extended paper of International Electron Devices Meeting (IEDM) 2021, recognized as the top-ranked student papers in IEDM 2021)

   54. J. Jang, D. -M. Geum, S. -H. Kim*, "Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700 nm", Optics Express 29, p. 38894 (2021)

   55. J. Shim, J. Lim, D. -M. Geum, B. H. Kim, S. -Y. Ahn, S. -H. Kim*, "Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors", Optics Express 29, p. 18037 (2021)

   56. D. -M. Geum, S. -K. Kim, H. -R. Lim, J. Park, J. Jeong, J. H. Han, W. J. Choi, H. -J. Kim, S. -H. Kim*, "Electrical analysis for wafer-bonded interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs", IEEE Electron Device Letters 41, p. 800 (2021) 

   57. W. Kim^, P. Bidenko^, J. Kim, J. Sim, J. -K. Han, S. -K. Kim, D. -M. Geum, S. -H. Kim*, Y. -K. Choi*, "Vertical InGaAs Biristor for sub-1V Operation", IEEE Electron Device Letters 42, p. 681 (2021) (selected as Editors' Picks)

   58. D. -M. Geum+, S. Kim+, J. Khym, J. Lim, S. -K. Kim, S. -Y. Ahn, T. S. Kim, K. Kang*, S. -H. Kim*, "Arrayed MoS2-In0.53Ga0.47As van der Waals Heterostructure for High-speed and Broadband Detection from Visible to Shortwave-infrared Light", Small, accepted (selected as a back cover) (2021)  

   59. T. S. Kim, H. Kim, D. -M. Geum, J. H. Han, I. Kim, N. Hong, G. Ryu, J. Kang, W. J. Choi, K. J. Yu, "Ultra-Lightweight, Flexible InGaP/GaAs Tandem Solar Cells with a Dual-Function Encapsulation Layer " , ACS Applied Materials & Interfaces, accepted (2021)  

   60. J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, J. Park, J. -H. Jang, S. -H. Kim*, "Stackable InGaAs-On-Insulator HEMTs for Monolithic 3D Integration", IEEE Transactions on Electron Devices 68, p. 2205 (2021) (featured in SemiconductorTODAY)

   61. S. -H. Kim*, I. -P. Roh*, J. -H. Han,  D. -M. Geum, S. K. Kim, S. -S. Kang, H. -K. Kang, W. C. Lee, S. K. Kim, D. K. Hwang, Y. H. Song, J. D. Song, "High hole mobility and low leakage thin-body (In)GaSb p-MOSFETs grown on high-bandgap AlGaSb", IEEE Journal of the Electron Device Society, 9, p. 42 (2021)  

   62. N. Hong, D. -M. Geum, T. Kim, S. -Y. Ahn, J. -H. Han, D. Jung, G. H. Ryu, S- H. Kim, K .J. Yu*, W. J. Choi*, "Flexible GaAs Photodetectors with Ultrathin Thermally Grown Silicon Dioxide as a Long-lived Barrier for Chronic Biomedical Implants", Advanced Photonics Research, 2000051 (2021)​ 

<2020>

1. 63. J. -K. Han, D. -M. Geum, M. -W. Lee, J. -M. Yu, S. -K. Kim, S. -H. Kim, Y. -K. Choi*, "Bio-inspired Photo-responsive Single Transistor Neuron for a Neuromorphic Visual System", Nano Letters 20,p. 8782 (2020)

   64. S. -K. Kim, D. -M. Geum (co-first), H. -R. Lim, J. -H. Han, H. -J. Kim, Y. -J. Jeong, S.- H. Kim*, "Photo-responsible Synapse using Ge Synaptic Transistors and GaAs Photodetectors", IEEE Electron Device Letters, 41, p. 605 (2020)  (selected as Editors' Picks) 

   65. D. -M. Geum, S. -K. Kim, S. Lee, D. Lim, H. -J. Kim, C. -H. Choi, S.- H. Kim*, "Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs using Sequential Fabrication Process", IEEE Electron Device Letters 41, p. 433 (2020) (selected as Editors' Picks) 

   66. S. -K. Kim, Y. -J. Jeong, P. Bidenko, H. -R. Lim, Y. -R. Jeon, H. Kim, Y. -J. Lee, D. -M. Geum, J. -H. Han, C. Choi, H. -J. Kim, S.- H. Kim*, "3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks", ACS Applied Materials and Interfaces 12, p. 7322 (2020)  

<2019>

1. 67. D. -M. Geum, S. -K. Kim, C. -M. Kang, S. -H. Moon, J. Kyhm, J. -H. Han, D. -S. Lee, S.- H. Kim*, "Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation", Nanoscale 11, p. 23139 (2019) (selected as a front cover)

   68. D. -M. Geum, S. -H. Kim (co-first), S. -K. Kim, S. -S. Kang, J. -H. Kyhm, J. -D. Song, W. J. Choi*, and E. Yoon*, "Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems", Scientific Reports 9, 18661 (2019) 

   69. S. -K. Kim, D. -M. Geum, H. -R. Lim, H. Kim, J. -H. Han, D. K. Hwang, J. D. Song, H. -J. Kim, S.- H. Kim*, "Improved Characteristics of MOS Interface between In0.53Ga0.47As and Insulator by H2 Annealing with Pt Gate Electrode ", Applied Physics Letters 115, 143502 (2019) 

   70. S. Kang, , D. -M. Geum, K. Kwak, J. -H. Kang, C. -H. Shim, H. Y. Hyun, S. -H. Kim, W. J. Choi, S. -H. Choi, M. -C. Park*, J. D. Song*, "InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K", Scientific Reports 9, 12875 (2019) 

   71. H. -R. Lim, S. -K. Kim, J. -H. Han, H. -S. Kim, D. -M. Geum, Y. -J. Lee, B. -K. Ju, H. -J. Kim, S.- H. Kim*, "Impact of bottom-gate biasing on Implant-free Junctionless Ge-on-Insulator n-MOSFETs", IEEE Electron Device Letters 40, p. 1362 (2019) 

   72. S.- H. Kim*, S. –K. Kim, S. –H. Shin, J. –H. Han, D. -M. Geum, J. –P. Shim, S. Lee, H. –S. Kim, G. Ju, J. –D. Song, M. A. Alam, H. –J. Kim, "Highly-stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for Monolithic 3D Integration of InGaAs MOSFETs", IEEE Journal of the Electron Device Society 7, p. 869 (2019) 

<Before 2019>

1. 73. I. –P. Ryo, S. –H. Kim (co-first), D. -M. Geum, W. Lu, Y. –H. Song*, Jesus A. del Alamo, and J. –D. Song* : “High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer”, Applied Physics Letters 113, 093501 (2018) 

   74. S. –H. Kim*, S. –K. Kim, J. –P. Shim, D. -M. Geum, G. Ju, H. –S. Kim, H. –J. Lim, H. –R. Lim, J. –H. Han, S. Lee, H. –S. Kim, P. Bidenko, C. –M. Kang, D. –S. Lee, J. –D. Song, W. J. Choi, and H. –J. Kim : “Heterogeneous Integration toward Monolithic 3D Chip enabled by III-V and Ge Materials”, IEEE Journal of the Electron Device Society 6, p. 579 (2018) 

   75. S. -K. Kim, J. –P. Shim, D. -M. Geum, C. –Z. Kim, H. –S. Kim, J. D. Song, S. –J. Choi, D. H. Kim, W. J. Choi, H. –J. Kim, D. -M. Kim*, and S. –H. Kim* : “Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Re-usability toward Monolithic 3D Integration with In0.53Ga0.47As channel”, IEEE Transactions on Electron Device 65, p. 1862 (2018) 

   76. D. -M. Geum, S. –H. Kim (co-first), S. –S. Kang, H. –S. Kim, H. Park, I. –P. Rho, S. –Y. Ahn, J. –D. Song, W. J. Choi, and E. Yoon, “Room Temperature Operation of Mid-infrared InAs0.81Sb0.19 based Photovoltaic Detectors with an In0.2Al0.8Sb Barrier Layer grown on GaAs Substrate”, Optics Express 26, p. 6249 (2018) 

   77. S. –K. Kim, D. -M. Geum, J. –P. Shim, J. –H. Han, C. –Z. Kim, H. –J. Kim, J. D. Song, W. J. Choi, S. –J. Choi, D. H. Kim, D. M. Kim*, and S. –H. Kim* : “Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques”, IEEE Transactions on Electron Device 64, p. 3601 (2017) 

   78. T. –H. Kil, S. –H. Kim (co-first), D. –H. Jung, D. -M. Geum, S. Lee, S. –J. Jung, S. Kim, C. Park, J. –S. Kim, J. –M. Baik, K. –S. Lee, C. –Z. Kim, W. J. Choi, and S. –H. Baek : “A high-efficient, concentrating-photovoltaic/thermoelectric hybrid generator”, Nano Energy 37, p. 242 (2017) 

   79. S. –H. Kim*, D. -M. Geum, M. –Su. Park, H. –S. Kim, J. –D. Song, and W. J. Choi : “Fabrication and Characterization of High-quality GaAs photodetector arrays on Si”, Applied Physics Letters 110, 153505 (2017) 

   80. D. -M. Geum, M.-S. Park, C. –Z. Kim, S. –H. Kim*, W. J. Choi*, and E. Yoon : “Heterogeneously Integrated High Performance GaAs Single Junction Solar Cells on Copper”, Journal of the Korean physical society 70, p. 693 (2017) 

   81. S. –K. Kim, D. -M. Geum, J. –P. Shim, C. –Z. Kim, H. –J. Kim, W. J. Choi, S. –J. Choi, D. H. Kim, S. –H. Kim*, and D. M. Kim* : “Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density”, Applied Physics Letters 110 (5), 2017 

   82. S. H. Kim*, D. -M. Geum, S. –K. Kim, H. –J. Kim, J. –D. Song, and W. J. Choi : “Low subthreshold-slope Double-gate GaAs Field-Effect-Transistors on Si”, IEEE Electron Device Letters 37, p. 1261 (2016) 

   83. S. –K. Kim, J. Lee, D. -M. Geum, M. –S. Park, W. J. Choi, S. –J. Choi, D. H. Kim, S. –H. Kim*, and D. M. Kim* : “Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs”, Solid State Electronics 112, p. 8, 2016 

   84. D. -M. Geum, M.-S. Park, J. –Y. Lim, H. –D. Yang, J. D. Song, C. –Z. Kim, E. Yoon, S. –H. Kim*, and W. J. Choi : “Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications”, Scientific reports 6, 20610, 2016 

   85. H. –J. Lee, J. –W. Lee, H. –J. Kim, D. –H. Jung, K. –S. Lee, S. –H. Kim, D. -M. Geum, C. Z. Kim, W. J. Choi*, and J. M. Baik* : “Optical Design of ZnO-based Antireflective Layers for Enhanced GaAs Solar Cell Performance”, Physical Chemistry Chemical Physics 18, p. 2906, 2016 

   86. M. -S. Park, D. -M. Geum, J. H. Kyhm, J. D. Song, S. -H. Kim*, and W. J. Choi* : “InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off”, Optics Express 23, p. 26888, 2015 

   87. S. -H. Kim, D. -M. Geum, M.-S. Park, C. –Z. Kim, and W. J. Choi* : “GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding”, Solar Energy Materials & Solar Cells, Vol 141, p. 372, 2015 

   88. S. -H. Kim, M.-S. Park, D. -M. Geum, H. Kim, G. Ryu, H. -D. Yang, J. D. Song, C. Z. Kim, W. J. Choi* : “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate”, Current Applied Physics 15, p. 40, 2015

   89. S. -H. Kim*, D. -M. Geum, M.-S. Park, and W. J. Choi : “In0.53Ga0.47As-On-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors Utilizing Y2O3 Buried Oxide”, IEEE Electron Device Letters, Vol 36, p. 451, 2015

   90. D. -M. Geum, S. H. Shin, S. M. Hong and J. H. Jang, “Metal Semiconductor Metal Varactors Based on InAlN/GaN Heterostructure with Cutoff Frequency of 308 GHz,” IEEE Electron Device Letters, (99), pp. April. 2015 

   91. D. -M. Geum, S. H. Shin, M. S. Park and J. H, Jang, “Effects of Nitrogen Flow Rate in Ohmic Contacts on InAlN/GaN Heterostructures,” Electronics letters, 50(21), pp, Oct. 2014. 

   92. M. S. Kim, J. M. Woo, D. -M. Geum, J. R. Rani, J. H. Jang, "Effect of copper surface pre-treatment on the properties of CVD grown graphene", AIP Advances, 4, pp. 127107 , Dec. 2014. 

   93. S. H. Shin, D. -M. Geum, and J.H. Jang, “MSM Varactor Diodes Based on In0.7Ga0.3AsHEMTs with Cut-off Frequency of 908 GHz,” IEEE Electron Device Letters, 35(2), pp.172-174, Feb. 2014 

   94. D. -M. Geum, S. H. Shin, M. S. Kim and J.H. Jang, “75-nm T-shaped gate InAlN/GaN HEMTs with minimal short channel effect,”Electronics letters, 49(24), pp.1536-1537, Nov. 2013