Representative publications 

Google Scholar profile

http://scholar.google.com/citations?user=tnKk0BEAAAAJ

under review 

129. J. Yoo+, I. Cho+, S. Lee, J. Kim, T. Nakazawa, I. Sohn, S. Lee, J. Seo, J. Park*, B. Shong*, H. Kim*

Elucidation of Enhanced Lysine Sensing via Pt-functionalized 2D WS2 for Biosensing Applications

128. C. Kim, H. Cho, C. Shi, M. Jang, W. Zhu, S. Im, M. Choi, G. Lee, S. Yang, X. Li, N. Hur, S. Nandi, M. Erdi, P. Motamarri, S.-C. Lee, S. Bhattacharjee, S.A. Tongay, S. Song, T.-E. Park, Y. Han*, B. Shong*, J. Suh*

Van der Waals template-encoded soft epitaxy of tellurium enabled by atomic layer deposition

127. D.-H. Lim+, Y.-M. Song+, Y. Kim, A.R. Choi, H.-M. Kim, H. Kim, S. Kwon, B. Shong, J. Shih, A.I. Khan*, Il-K. Oh*

Scale-robust Low Resistance Transport in Atomic Layer Deposited Topological Semimetal Wafers on Amorphous Substrate

126. G. Maeng, S. Lim, M.G. Lee, B. Shong, K. Cho, Y. Lee*

Role of surface states and band modulations in ultrathin ruthenium interconnects 

125. G. Maeng, S. Lim, B. Shong, Y. Lee*

First-principles high-throughput screening of ruthenium compounds for advanced interconnects

124. J. Kim, Y. Son, J.M. Jang, S.B. Kim, T.E. Hong, J.S. Bae, T. Cheon, B. Shong, S.-H. Kim*

Enhanced Functional Properties of Ru Thin Films by a 6-step Atomic Layer Deposition-type Process for Advanced Cu Alternative Nanoscale Interconnects

2026 (2) 

119. H. Nakatsubo, J. Kim, I. Cho, E.-S. Lee, M. Iseki, T. Shigetomi, R. Harada, T. Cheon, D. Mohapatra, B. Shong, S.-H. Kim*

Small and Simple Molecular Structure-based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization

Advanced Science 

http://doi.org/10.1002/advs.202519209 

123. J.M. Jang, S. Kwon, J. Jung, B. Shong*

Adsorption of NH3 on TiN and Si3N4 surfaces: a theoretical study 

Computational and Theoretical Chemistry, 2026, 1256, 115636 

http://doi.org/10.1016/j.comptc.2025.115636

2025 (17) 

121. S. Shin+, I. Cho+, S.K. Han+, J. Heo, J. Han, H. Jeon, J. Lee, M. Cho, D.J. Preston, I.S. Kim*, B. Shong*, W.-K. Lee*

Strain‐Engineered Oxygen-Modified Nickel Telluride/Nickel Oxide Heterostructures for Bifunctional Alkaline Water Electrocatalysis

ACS Nano, 2025, 19 (51), 42796–42815 

http://doi.org/10.1021/acsnano.5c14702

120. M. Kim+, S. Seo+, W.P. Jeon, Y. Lee, J. Lee, H. Kim, B. Shong*, S.F. Bent*

Anhydrous Atomic Layer Deposition of HfO2: Mechanistic Analysis of the Tetrakis(dimethylamido)hafnium (TDMAH) – O2 Process

Langmuir, 2025, 41 (51), 34533–34541 

http://doi.org/10.1021/acs.langmuir.5c05147

119. C.T. Nguyen+, M. Kim+, Y.-H. Kim, T. Cheon, N.L. Trinh, S. Kim, S.-H. Kim, B. Shong*, H.-B.-R. Lee*

Atomic Layer Modulation of Ruthenium Aluminum Oxide through Reactivity Control of Precursors for Seedless Copper Interconnect

Chemistry of Materials, 2025, 37 (24), 9745–9757 

http://doi.org/10.1021/acs.chemmater.5c02156

118. J. Han+, M.K. Nam+, S. Shin+, I. Cho, H. Jeon, J. Heo, M.K. Cho, D.J. Preston, M.C. Hersam, I.S. Kim*, B. Shong*, W.-K. Lee*

Efficient and Stable Electrocatalytic Oxygen Evolution from MoTex/Ni(OH)2 Heterostructures

Journal of the American Chemical Society 2025, 147 (44), 41096-41108 

http://doi.org/10.1021/jacs.5c15520 

117. J. Lim, A.T. Hoang, Z. Li, T.T. Ngoc Van, J.-I. Lee, K. Lee, N. Gauriot, K. Frohna, T. Taniguchi, K. Watanabe, B. Shong, K. Kim, S. Stranks, J.-H. Ahn*, M. Chhowalla*, A. Rao*

Dual-step chemical treatment of wafer-scale MOCVD grown monolayer molybdenum disulfides 

ACS Nano 2025, 19 (39), 34698–34707 

http://doi.org/10.1021/acsnano.5c08927

116. N.-K. Yu, G. Bae, K.-S. An*, B. Shong*

Combined adsorption of Na and 1,3-butadiene on the Si(100) surface

Applied Surface Science, 2025, 704, 163449 

http://doi.org/10.1016/j.apsusc.2025.163449

115. J.C. Park+, C.I. Choi+, M. Kim, H. Jang, S.H. Yun, B. Shong*, T.J. Park* 

Atomic Layer Deposition of ZrO2 Films at High Temperatures (>350 °C) Using a Modified Cyclopentadienyl Zr Precursor

ACS Applied Materials & Interfaces, 2025, 17 (37), 52913–52919 

http://doi.org/10.1021/acsami.5c11791 

114. J.S. Lim, S.E. Lee, B. Shong, Y.-K. Park, H.-S. Lee* 

Valorization of Cocoa Bean Shell Residue from Supercritical Fluid Extraction through Hydrothermal Carbonization for Porous Material Production

The Journal of Supercritical Fluids, 2025, 221, 106550 

http://doi.org/10.1016/j.supflu.2025.106550

113. J. Kim, B. Shong*

Adsorption mechanism of hexachlorodisilane for low-temperature atomic layer deposition of silicon nitride 

Surface and Interfaces, 2025, 64, 106470 

http://doi.org/10.1016/j.surfin.2025.106470 

112. H. Cho, C. Yoo*, B. Shong*

Influence of Ge Precursors toward Atomic Layer Deposition of Germanium Tellurides: A DFT Study 

Vacuum, 2025, 235, 114142 

http://doi.org/10.1016/j.vacuum.2025.114142

111. H. Eom, S. Lee, Y. Choi, B. Shong*

Adsorption of trimethylaluminum on period 4 and 5 transition metal surfaces

Surface Science, 2025, 755, 122711

http://doi.org/10.1016/j.susc.2025.122711 

110. A. Shearer, Y. Cho, M. Kim, A. Werbrouck, T.-L. Liu, C.J. Takacs, B. Shong, S.F. Bent* 

Crystalline 1D Coordination Polymer Inhibitor Layer Leads to Vertical Sidewalls in Selectively Deposited ZnO on Nanoscale Patterns

ACS Nano, 2025, 19 (12), 11936-11948 

http://doi.org/10.1021/acsnano.4c16115

109. Y. Song+, H.-J. Kim+, S.H. Lee+, S. Kwon, B. Shong*, I.-K. Oh* 

Role of a Cyclopentadienyl Ligand in Hf Precursors Using H2O or O3 as Oxidant in Atomic Layer Deposition

Journal of Vacuum Science and Technology A, 2025, 43 (2) 022414 

http://doi.org/10.1116/6.0004358 

108. I. Cho, J. Yang, S.S. Raya, B. Shong*

Adsorption of Aluminum Precursors on MoS2 toward Nucleation of Atomic Layer Deposition

Colloids and Interface Science Communications, 2025, 65, 100823

http://doi.org/10.1016/j.colcom.2025.100823

107. J.C. Park+, C.I. Choi+, W.P. Jeon, T.T. Ngoc Van, W.-H. Kim, J.-H. Ahn, B. Shong*, T.J. Park*

High-temperature atomic layer deposition of HfO2 film with low impurity using a novel Hf precursor

Journal of Materials Chemistry C, 2025, 13 (4), 1637-1645 

http://doi.org/10.1039/D4TC01256A

106. S. Kwon, B. Shong*

Chemical Mechanism for Nucleation Enhancement in Atomic Layer Deposition of Pt by Surface Functionalization

Journal of Vacuum Science and Technology A, 2025, 43 (1), 012401 

http://doi.org/10.1116/6.0004143 

105. S.E. Lee, J.S. Lim, Y.-K. Park, B. Shong, H.-S. Lee* 

Utilizing cocoa bean husk residues from supercritical extraction for biofuel production through hydrothermal liquefaction

The Journal of Supercritical Fluids, 2025, 215, 106416 

http://doi.org/10.1016/j.supflu.2024.106416 

2024 (14)

104. M. Kim, B. Shong*

Dimerization Equilibrium of Group 13 Precursors for Vapor Deposition of Thin Films

Computational and Theoretical Chemistry, 2024, 1242, 114953 

http://doi.org/10.1016/j.comptc.2024.114953

103. I. Cho, B. Shong*

Exchange reactions during atomic layer deposition of ternary group 13 oxides and nitrides

ACS Applied Electronic Materials, 2024, 6 (10), 7495–7502 

http://doi.org/10.1021/acsaelm.4c01346

102. E.-H. Cho+, D. Kong+, I. Cho+, Y. Leem, Y.M. Lee, M. Kim, C.T. Nguyen, J.Y. Lee, B. Shong*, H.-B.-R. Lee*

Area-Selective Atomic Layer Deposition of Ruthenium via Reduction of Interfacial Oxidation 

Chemistry of Materials, 2024, 36 (18), 8663–8672 

http://doi.org/10.1021/acs.chemmater.4c01133 

101. J.S. Lim, S.E. Lee, S.J. Kim, B. Shong, Y.-K. Park, H. Lee*

Optimization Study to Minimize Trigonelline and Chlorogenic acid Loss in the Coffee Decaffeination Process through Supercritical Fluid Extraction

Clean Technology, 2024, 30 (3), 203–210 

http://doi.org/10.7464/ksct.2024.30.3.203 

100. M. Kim, S. Kim, B. Shong*

Adsorption of dimethylaluminum isopropoxide (DMAI) on the Al2O3 surface: A machine-learning potential study 

Journal of Science: Advanced Materials and Devices, 2024, 9 (3), 100754 

http://doi.org/10.1016/j.jsamd.2024.100754 

99. S.H. Yoon+, J.H. Cho+, I. Cho+, M.J. Kim, J.S. Hur, S.W. Bang, H.J. Lee, J.U. Bae, J. Kim, B. Shong*, J.K, Jeong*

Tailoring Subthreshold Swing in a-IGZO Thin-Film Transistors for AMOLED Displays: Impact of Conversion Mechanism on PEALD Deposition Sequences

Small Methods, 2024, 8 (8), 2301185 

http://doi.org/10.1002/smtd.202301185 

98. J. Lee, J. Oh, J. Kim, H. Oh, B. Shong*, W.-H. Kim*

Area-selective atomic layer deposition of Ru thin films by chemo-selective inhibition of alkyl aldehyde molecules on nitride surfaces

Applied Surface Science, 2024, 662, 160099

http://doi.org/10.1016/j.apsusc.2024.160099 

97. T.T. Ngoc Van, B. Shong* 

Surface chemical reactions during atomic layer deposition of zinc oxynitride (ZnON)

Electronic Materials Letters, 2024, 20 (4), 500–507 

http://doi.org/10.1007/s13391-023-00467-8

96. J. Park+, I. Cho+, H. Jeon+, Y. Lee, J. Zhang, D. Lee, M.K. Cho, D.J. Preston, B. Shong*, I.S. Kim*, W.-K. Lee* 

Conversion of Layered WS2 Crystals into Mixed-Domain Electrochemical Catalysts by Plasma-Assisted Surface Reconstruction 

Advanced Materials, 2024, 36 (25), 2314031 

http://doi.org/10.1002/adma.202314031

95. M. Kim, H. Eom, S.H. Lee, J. Kim, S. Kwon, B. Shong*

Theoretical Design Strategies for Area-Selective Atomic Layer Deposition

Chemistry of Materials, 2024, 36 (11), 5313-5324 

http://doi.org/10.1021/acs.chemmater.3c03326

94. M.Kim, H. Oh, B Shong*

Reaction mechanisms of α,ω-bifunctional molecules toward atomic layer deposition versus molecular layer deposition 

Materials Chemistry and Physics, 2024, 318, 129273 

http://doi.org/10.1016/j.matchemphys.2024.129273

93. H. Eom, W. Bae, J.Y. Sung, J.H. Choi, K.S. Dae, J.H. Jang, T.J. Park, S.W. Lee, B. Shong*

Formation of oxygen vacancy at surfaces of ZnO by trimethylaluminum 

APL Materials, 2024, 12, 031115 

http://doi.org/10.1063/5.0198197

92. J. Kim+, C. Yeon+, D.-H. Cho, J. Jung*, B. Shong*

Enhancement of conformality of silicon nitride thin films by ABC-type atomic layer deposition 

Advanced Electronic Materials, 2024, 10 (3), 2300722 

http://doi.org/10.1002/aelm.202300722

91. T.T. Ngoc Van+, C. Kim+, H. Lee, J. Kim*, B. Shong*

Machine learning-based exploration of molecular design descriptor for area-selective atomic layer deposition (AS-ALD) precursors

Journal of Molecular Modeling, 2024, 30, 10 

http://doi.org/10.1007/s00894-023-05806-y 

2023 (13)

90. A.T. Hoang+, L. Hu+, B.J. Kim+, T.T. Ngoc Van, K.D. Park, Y. Jeong, K. Lee, S. Ji, J. Hong, A.K. Katiyar, B. Shong, K. Kim, S. Im, W.J. Chung, J.-H. Ahn*

Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics 

Nature Nanotechnology, 2013, 18 (12), 1439–1447 

http://doi.org/10.1038/s41565-023-01460-w 

89. H. Kim+, M. Kim+, B. Kim, B. Shong*

Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride 

Journal of Vacuum Science and Technology A, 2023, 41 (6), 063409 

http://doi.org/10.1116/6.0002966 

88. J. Lee, S.H. Lee, B. Shong*

Mechanistic analysis on low temperature thermal atomic layer deposition of nitrides utilizing H2S 

Journal of Vacuum Science and Technology A, 2023, 41 (6), 062405 

http://doi.org/10.1116/6.0003041 

87. Y. Lee+, S.-H. Lee+, S.K. Han+, J. Park, D. Lee, D.J. Preston, I.S. Kim, M.C. Hersam, Y. Kwon*, B. Shong*, W.-K. Lee*

Strain-enabled local phase control in layered MoTe2 for enhanced electrocatalytic hydrogen evolution

ACS Energy Letters, 2023, 8 (11), 4716–4725 

http://doi.org/10.1021/acsenergylett.3c01941

86. H.Y. Lee+, J.S. Hur+, I. Cho, C.H. Choi, S.H. Yoon, Y. Kwon, B. Shong*, J.K. Jeong*

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors 

ACS Applied Materials & Interfaces, 2023, 15 (44), 51399-51410 

http://doi.org/10.1021/acsami.3c11796

85. N.K. Yu, J.-M. Lee, W.-H. Kim*, B. Shong* 

Chemical mechanism of oxidative etching of ruthenium: Insights into continuous versus self-limiting conditions

Applied Surface Science, 636, 157864 

http://doi.org/10.1016/j.apsusc.2023.157864

84. C. Kim, N. Hur, J. Yang, S. Oh, J. Yeo, H.Y. Jeong*, B. Shong*, J. Suh*

Atomic layer deposition route to scalable, electronic-grade van der Waals Te thin films 

ACS Nano, 2023, 17 (16), 15776–15786 

http://doi.org/10.1021/acsnano.3c03559

83. M. Kim, E. Shin, H. Song, Y. Nam, D. Kim, J.-H. Hwang*, B. Shong*

Rational molecular design for non-aqueous atomic layer deposition of zinc oxide

Chemistry of Materials, 2023, 35 (12), 4669-4679 

http://doi.org/10.1021/acs.chemmater.3c00143 

82. C. Ahn, J.H. Jung, J.J. Kim, D.-C. Lee*, B. Shong*

Adsorption and surface diffusion of atomic Ru on TiN and SiO2: A first-principles study 

Coatings, 2023, 13 (6), 1020 

http://doi.org/10.3390/coatings13061020 

81. J. Hyun, H. Kim, B. Shong, Y.-S. Min*

Pyridine-Catalyzed Atomic Layer Deposition of SiO2 from Hexachlorodisilane and Water: In-Situ Mechanistic Study

Chemistry of Materials, 2023, 35 (10), 4100–4108 

http://doi.org/10.1021/acs.chemmater.3c00621

80. N.K. Yu, K. Kim, C. Heo, J. Lee, W. Kim, S.-W. Chung*, B. Shong* 

Thermal decomposition pathways of chlorinated trisilanes

Silicon, 2023, 15 (7), 3193–3199 

http://doi.org/10.1007/s12633-022-02248-8

79. J.H. Jung, H. Oh, B. Shong*

Fluorination of TiN, TiO2, and SiO2 surfaces by HF toward selective atomic layer etching (ALE)

Coatings, 2023, 13 (2), 387 

http://doi.org/10.3390/coatings13020387 

78. H.-I. Yeom, J. Kim, G.-J. Jeon, J. Park, D.U. Han, J.H. Kim, K.M. Kim, B. Shong, S.-H.K Park* 

High Performance Oxide Thin-Film Diode and its Conduction Mechanism Based on ALD-assisted Interface Engineering 

Journal of Materials Chemistry C, 2023, 11 (4), 1336–1345 

http://doi.org/10.1039/D2TC03751C 

2022 (9)

77. N.H. Le, T.T. Ngoc Van, B. Shong, J. Cho* 

Low temperature glycolysis of polyethylene terephthalate 

ACS Sustainable Chemistry & Engineering, 2022, 10 (51), 17261–17273 

http://doi.org/10.1021/acssuschemeng.2c05570 

76. C.T. Nguyen, E.-H. Cho, B. Gu, S. Lee, H.-S. Kim, J. Park, N.-K. Yu, S. Shin, B. Shong, J.Y. Lee, H.-B.-R. Lee*

Gradient Area-Selective Deposition for Seamless Gap-filling in 3D Nanostructures through Surface Chemical Reactivity Control 

Nature Communications, 2022, 13 (1), 7597 

http://doi.org/10.1038/s41467-022-35428-6 

75. S. Lee, G. Baek, H. Yang, T.T. Ngoc Van, S.-W. Kim, Y.-K. Kim, B. Shong*, J.-S. Park*

Thermally annealed molecular layer-deposited indicone: Structural analysis and area selective deposition application

Advanced Materials Interfaces, 2022, 9 (32), 2201411 

http://doi.org/10.1002/admi.202201411 

74. T.T. Ngoc Van, D. Jang, E.A. Jung, H. Noh, J. Moon, D.-S. Kil, S.-W. Chung*, B. Shong*

Role of Cyclopentadienyl Ligands of Group 4 Precursors toward High-Temperature Atomic Layer Deposition 

The Journal of Physical Chemistry C, 2022, 126 (42), 18090–18099 

http://doi.org/10.1021/acs.jpcc.2c04425 

73. J.-M. Lee+, J. Lee+, H. Oh, J. Kim, B. Shong*, T.J. Park*, W.-H. Kim*

Inhibitor-free Area-Selective Atomic Layer Deposition of SiO2 through Chemoselective Adsorption of an Aminodisilane Precursor on Oxide versus Nitride Substrates 

Applied Surface Science, 2022, 589, 152939 

http://doi.org/10.1016/j.apsusc.2022.152939

72. M.-J. Ha, H. Kim, J.-H. Choi, M. Kim, W.-H. Kim, T.J. Park, B Shong*, J.-H. Ahn*

Ultra-low Resistivity Molybdenum Carbide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Using a Cyclopentadienyl-based Precursor

Chemistry of Materials, 2022, 34 (6), 2576–2584 

http://doi.org/10.1021/acs.chemmater.1c03607

71. T.K. Yun, Y. Lee, M.J. Kim, J. Park, D. Kang, S. Kim, Y.J. Choi, Y. Yi, B. Shong, J.H. Cho, K. Kim*

Commensurate assembly of C60 on black phosphorus for mixed-dimensional van der Waals transistors 

Small, 2022, 18 (10), 2105916 

http://doi.org/10.1002/smll.202105916

70. N.-Y. Park+, M. Kim+, Y.-H. Kim, R. Ramesh, D.K. Nandi, T. Tsugawa, T. Shigetomi, K. Suzuki, R. Harada, M. Kim, K.-S. An, B. Shong*, S.-H. Kim*

Atomic Layer Deposition of Iridium Using a Tricarbonyl Cyclopropenyl Precursor and Oxygen

Chemistry of Materials, 2022, 34 (4), 1533-1543 

http://doi.org/10.1021/acs.chemmater.1c03142

69. A. Choi+, A.T. Hoang+, T.T. Ngoc Van, B. Shong, L. Hu, K.Y. Thai, J.-H. Ahn*

Residue-free photolithographic patterning of graphene

Chemical Engineering Journal, 2022, 429, 132504

http://doi.org/10.1016/j.cej.2021.132504

2021 (16)

68. B.G. Ko+, C.T. Nguyen+, B. Gu, M.R. Khan, K. Park, H. Oh, J. Park, B. Shong, H.-B.-R. Lee*

Growth Modulation of Atomic Layer Deposition of HfO2 by Combinations of H2O and O3 Reactants 

Dalton Transactions, 2021, 50 (48), 17935–17944 

http://doi.org/10.1039/D1DT03465K 

67. J. Park, H. Eom, S.H. Kim, T.J. Seok, T.J. Park, S.W. Lee, B. Shong* 

Chemical mechanism of formation of the two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition

Materials Today Advances, 2021, 12, 100195 

http://doi.org/10.1016/j.mtadv.2021.100195 

66. Y. Lee, S. Seo, T. Nam, H. Lee, H. Yoon, S. Sun, I.-K. Oh, S. Lee, B. Shong, J.H. Seo, J.H. Seok, H. Kim*

Growth Mechanism and Electrical Properties of Tungsten Films deposited by Plasma-enhanced Atomic Layer Deposition with Chloride and Metal Organic Precursors

Applied Surface Science, 2021, 568, 150939 

http://doi.org/10.1016/j.apsusc.2021.150939 

65. N.K. Yu, C.H. Moon, J. Park, H.-B.-R. Lee*, B. Shong*

Evaluation of silicon tetrahalide precursors for low-temperature thermal atomic layer deposition of silicon nitride 

Applied Surface Science, 2021, 565, 150603 

http://doi.org/10.1016/j.apsusc.2021.150603

64. M.Z. Ansari, P. Janicek, D.K. Nandi, S. Slang, M. Bouska, H. Oh, B. Shong, S.-H. Kim*

Low-temperature growth of crystalline Tin(II) monosulfide thin films by atomic layer deposition using a liquid divalent tin precursor

Applied Surface Science, 2021, 565, 150152 

http://doi.org/10.1016/j.apsusc.2021.150152 

63. S. Seo+, W.J. Woo+, Y. Lee, H. Yoon, M. Kim, I.-K. Oh, S.-M. Chung, H. Kim*, B. Shong*

Reaction mechanism of non-hydrolytic atomic layer deposition of Al2O3 with a series of alcohol oxidants

The Journal of Physical Chemistry C, 2021, 125 (33), 18151–18160 

http://doi.org/10.1021/acs.jpcc.1c03518 

62. S. Lee+, M. Kim+, G. Mun, J. Ko, H.-I. Yeom, G.-H. Lee, B. Shong*, S.-H.K. Park* 

Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition 

ACS Applied Materials & Interfaces, 2021, 13 (33), 40134–40144

http://doi.org/10.1021/acsami.1c11304

61. J. Lee+, J.-M. Lee+, H. Oh, C. Kim, J. Kim, D.H. Kim, B. Shong*, T.J. Park*, W.-H. Kim* 

Inherently Area-Selective Atomic Layer Deposition of SiO2 Thin Films to Confer Oxide versus Nitride Selectivity 

Advanced Functional Materials, 2021, 31 (33), 2102556 

http://doi.org/10.1002/adfm.202102556

60. Y. Kotsugi, S.-M. Han, Y.-H. Kim, T. Cheon, D.K. Nandi, R. Ramesh, N.K. Yu, K. Son, T. Tsugawa, S. Ohtake, R. Harada, Y.-B. Park, B. Shong*, S.-H. Kim*

Atomic Layer Deposition of Ru for Replacing Cu-interconnects

Chemistry of Materials, 2021, 33 (14), 5639–5651

http://doi.org/10.1021/acs.chemmater.1c01054 

59. H.-M. Kim, J.-H. Lee, S.-H. Lee, R. Harada, T. Shigetomi, S. Lee, T. Tsugawa, B. Shong*, J.-S. Park* 

Area-selective atomic layer deposition of ruthenium using a novel Ru precursor and H2O as a reactant 

Chemistry of Materials, 2021, 33 (12), 4353–4361 

http://doi.org/10.1021/acs.chemmater.0c04496 

58. C.T. Nguyen, B. Gu, T. Cheon, J. Park, M.R. Khan, S.-H. Kim, B. Shong, H.-B.-R. Lee*

Atomic Layer Modulation of Multicomponent Thin Films through Combination of Experimental and Theoretical Approaches 

Chemistry of Materials, 2021, 33 (12), 4435–4444 

http://doi.org/10.1021/acs.chemmater.1c00508 

57. D.H. Kim+, J.C. Park+, J. Park, D.-Y. Cho, W.-H. Kim, B. Shong*, J.-H. Ahn*, T.J. Park*

Wafer Scale Growth of MoS2 Monolayer via One-Cycle of Atomic Layer Deposition: Adsorbate-Controlled Method

Chemistry of Materials, 2021, 33 (11), 4099-4105 

http://doi.org/10.1021/acs.chemmater.1c00729 

56. S.S. Raya, A.S. Ansari*, B. Shong* 

Adsorption of gas molecules on graphene, silicene, and germanene: A comparative first-principles study

Surfaces and Interfaces, 2021, 101054 

http://doi.org/10.1016/j.surfin.2021.101054 

55. A.S. Ansari, J.W. Han, B. Shong* 

Intermediates for catalytic reduction of CO2 on p-block element surfaces

Journal of Industrial and Engineering Chemistry, 2021, 96, 236–242

http://doi.org/10.1016/j.jiec.2021.01.016 

54. A.T.A. Ahmed, A.S. Ansari, S.M. Pawar, B. Shong, H. Kim*, H. Im* 

Anti-corrosive FeO decorated CuCo2S4 as an efficient and durable electrocatalyst for hydrogen evolution reaction

Applied Surface Science, 2021, 539, 148229 

http://doi.org/10.1016/j.apsusc.2020.148229

53. S. Choi, A.S. Ansari, H.J. Yun, H. Kim, B, Shong*, B.J. Choi*

Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition

Journal of Alloys and Compounds, 2021, 854, 157186

http://doi.org/10.1016/j.jallcom.2020.157186